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1. 发明授权

US07881026B2 Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：US07881026B2
公开(公告)日：2011-02-01
申请号：US12606715
申请日：2009-10-27
申请人： Takayasu Ito , Mitsuru Hiraki , Koichi Ashiga
发明人： Takayasu Ito , Mitsuru Hiraki , Koichi Ashiga
IPC分类号： H02H3/22
CPC分类号： H01L23/50 , H01L23/60 , H01L24/06 , H01L27/0207 , H01L27/0266 , H01L2224/05553 , H01L2224/05554 , H01L2924/01029 , H01L2924/12032 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H02M3/00 , H02M3/07 , H02M3/157 , H01L2924/00
摘要： An integrated circuit formed on a semiconductor chip includes voltage regulators for stepping down an externally-supplied power voltage to produce an internal power voltage, and internal circuits which operate based on the internal power voltage. The voltage regulators are laid in the area of the buffers and protective elements for the input/output signals and power voltages so that the overhead area due to the on-chip provision of the voltage regulators is minimized. The internal power voltage is distributed to the internal circuits through a looped main power line, with an electrode pad for connecting an external capacitor for stabilizing the internal power voltage being provided on it, so that the internal power voltage is stabilized and the power consumption of the integrated circuit is minimized.
摘要翻译：形成在半导体芯片上的集成电路包括用于降低外部提供的电源电压以产生内部电源电压的电压调节器，以及基于内部电源电压工作的内部电路。电压调节器被放置在缓冲器和保护元件的区域中用于输入/输出信号和电源电压，使得由于电压调节器的片上提供而导致的开销面积被最小化。内部电源电压通过环形主电源线分配到内部电路，电极焊盘用于连接外部电容器，用于稳定其上提供的内部电源电压，从而内部电源电压稳定，功耗集成电路最小化。

2. 发明授权

US07372245B2 Semiconductor integrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US07372245B2
公开(公告)日：2008-05-13
申请号：US11727559
申请日：2007-03-27
申请人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Tadashi Kameyama
发明人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Tadashi Kameyama
IPC分类号： G05F3/16 , G05F3/20
CPC分类号： G05F3/222
摘要： A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common. A temperature sense voltage is formed from a connecting point of the first and second resistors.
摘要翻译：具有第一电流流经的发射极的第一晶体管的两个发射极电压和至少一个具有发射极的第二晶体管之间的差异，通过该发射极，这样的第二电流达到其电流密度小于第一晶体管流过第一电阻器。第二电阻器设置在第二晶体管的发射极和电路的地电位之间。分别在第一和第二晶体管的集电极之间设置第三电阻器和第四电阻器，以及电源电压。响应于第一晶体管的集电极电压和第二晶体管的集电极电压而形成第一晶体管的集电极电压和第二晶体管的集电极电压相等的这种输出电压，并被提供给第一晶体管的基极和第二个晶体管是共同的。温度感测电压由第一和第二电阻器的连接点形成。

3. 发明申请

US20070170907A1 Semiconductor integrated circuit 失效
公开(公告)号：US20070170907A1
公开(公告)日：2007-07-26
申请号：US11727559
申请日：2007-03-27
申请人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Tadashi Kameyama
发明人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Tadashi Kameyama
IPC分类号： G05F3/20
CPC分类号： G05F3/222
摘要： A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common. A temperature sense voltage is formed from a connecting point of the first and second resistors.

4. 发明申请

US20060235630A1 Semicondustor device 失效
标题翻译：半导体器件
公开(公告)号：US20060235630A1
公开(公告)日：2006-10-19
申请号：US11401977
申请日：2006-04-12
申请人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Toyohiro Shimogawa
发明人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Toyohiro Shimogawa
IPC分类号： G06F19/00
CPC分类号： G06F1/3203 , G06F1/3287 , Y02D10/171
摘要： The present invention provides a semiconductor device capable of realizing power saving and improvement in reliability or reduction in area. A semiconductor device includes: a power switch connecting an internal power supply in which power is not shut down and an internal power supply in which power is shut down; and an internal voltage determining circuit for determining voltage of the internal power supply in which power is shut down. Voltage of the internal power supply in which power is shut down is generated from voltage of an external power supply by using a regulator circuit. When the power of the internal power supply is interrupted, the power switch is turned off, the regulator circuit is turned off, and an output of the regulator circuit is shorted to a ground potential. When the power of the internal power supply is resumed, the regulator circuit is turned on, shorting is cancelled, the increased voltage of the internal power supply is determined by the internal voltage determining circuit, operation of a circuit block is started, and the switch is turned on.
摘要翻译：本发明提供一种半导体装置，其能够实现节电，提高可靠性或减小面积。一种半导体装置，包括：连接不断电的内部电源的电源开关和断电的内部电源; 以及用于确定电源关闭的内部电源的电压的内部电压确定电路。通过使用调节电路从外部电源的电压产生关闭电源的内部电源的电压。当内部电源的电源中断时，电源开关关闭，调节器电路关闭，调节器电路的输出短路到地电位。当恢复内部电源的电源时，调节器电路接通，短路被取消，内部电源的增加的电压由内部电压确定电路确定，电路块的操作开始，开关打开

5. 发明申请

US20060220634A1 Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：US20060220634A1
公开(公告)日：2006-10-05
申请号：US11390276
申请日：2006-03-28
申请人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Tadashi Kameyama
发明人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Tadashi Kameyama
IPC分类号： G05F3/16
CPC分类号： G05F3/222
摘要： A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common. A temperature sense voltage is formed from a connecting point of the first and second resistors.
摘要翻译：具有第一电流流经的发射极的第一晶体管的两个发射极电压和至少一个具有发射极的第二晶体管之间的差异，通过该发射极，这样的第二电流达到其电流密度小于第一晶体管流过第一电阻器。第二电阻器设置在第二晶体管的发射极和电路的地电位之间。分别在第一和第二晶体管的集电极之间设置第三电阻器和第四电阻器，以及电源电压。响应于第一晶体管的集电极电压和第二晶体管的集电极电压而形成第一晶体管的集电极电压和第二晶体管的集电极电压相等的这种输出电压，并被提供给第一晶体管的基极和第二个晶体管是共同的。温度感测电压由第一和第二电阻器的连接点形成。

6. 发明授权

US07093143B2 Semiconductor integrated circuit 失效
公开(公告)号：US07093143B2
公开(公告)日：2006-08-15
申请号：US10423882
申请日：2003-04-28
申请人： Takayasu Ito , Mitsuru Hiraki , Yuichi Okuda
发明人： Takayasu Ito , Mitsuru Hiraki , Yuichi Okuda
IPC分类号： G06F1/26
CPC分类号： G06F17/5045 , G06F1/26
摘要： There is provided a semiconductor integrated circuit that hardly causes an unnecessary operation time for variable control over an operating frequency and an internal power supply voltage. A CPU specifies an operational clock signal frequency to a clock generation circuit and an internal power supply voltage to a power supply circuit. The power supply circuit comprises a voltage regulator and a determination circuit to determine a transition state to a specified internal power supply voltage. The CPU uses a first signal to notify which time point the power supply voltage variable control start to the power supply circuit. The power supply circuit returns a second signal to the CPU to notify at which time point the power supply voltage variable control terminated. Based on handshaking between the first and second signals, the power supply voltage variable control hardly causes an unnecessary operation time for variable control over the operating frequency and the internal power supply voltage for saving power consumptions.

7. 发明授权

US06667603B2 Semiconductor integrated circuit with different operational current modes 失效
标题翻译：具有不同工作电流模式的半导体集成电路
公开(公告)号：US06667603B2
公开(公告)日：2003-12-23
申请号：US10247521
申请日：2002-09-20
申请人： Mitsuru Hiraki , Takayasu Ito
发明人： Mitsuru Hiraki , Takayasu Ito
IPC分类号： G05F159
CPC分类号： H02M3/155 , G06F1/26 , G06F1/32 , H02M2001/0032 , H02M2001/0045 , Y02B70/16 , Y10T307/696
摘要： For an internal circuit having a first operation mode consuming a first operational current and a second operation mode consuming a second operational current, which is smaller than the first operational current, a first power source regulator for stepping down a predefined output power supply voltage from an input power supply voltage and having a current supply ability corresponding to the first operational current of the internal circuit and a second power source gulator having a current supply ability corresponding to the second operational current are combined in order to, under the control of a power supply control unit, operate the first step-down type regulator in response to a first control signal instructing the first operation mode in the internal circuit and to operate the second step-down type regulator in response to a second control signal instructing the second operation mode. In this case, the internal circuit and power supply control unit are provided in one semiconductor integrated circuit device so that reduced power consumption and power supply switching in accordance with the operation mode can be achieved.
摘要翻译：对于具有消耗第一操作电流的第一操作模式和消耗小于第一工作电流的第二工作电流的第二操作模式的内部电路，用于从第一操作电流降低预定义的输出电源电压的第一电源调节器输入电源电压并具有与内部电路的第一工作电流相对应的电流供应能力和具有与第二工作电流相对应的电流供应能力的第二电源模拟器，以便在电源的控制下控制单元，响应于指示内部电路中的第一操作模式的第一控制信号操作第一降压型稳压器，并且响应于指示第二操作模式的第二控制信号来操作第二降压型稳压器。在这种情况下，内部电路和电源控制单元设置在一个半导体集成电路装置中，从而可以实现根据操作模式的降低的功耗和电源切换。

8. 发明授权

US07630178B2 Semiconductor integrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US07630178B2
公开(公告)日：2009-12-08
申请号：US12180329
申请日：2008-07-25
申请人： Takayasu Ito , Mitsuru Hiraki , Koichi Ashiga
发明人： Takayasu Ito , Mitsuru Hiraki , Koichi Ashiga
IPC分类号： H02H3/22
CPC分类号： H01L23/50 , H01L23/60 , H01L24/06 , H01L27/0207 , H01L27/0266 , H01L2224/05553 , H01L2224/05554 , H01L2924/01029 , H01L2924/12032 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H02M3/00 , H02M3/07 , H02M3/157 , H01L2924/00
摘要： An integrated circuit formed on a semiconductor chip includes voltage regulators for stepping down an externally-supplied power voltage to produce an internal power voltage, and internal circuits which operate based on the internal power voltage. The voltage regulators are laid in the area of the buffers and protective elements for the input/output signals and power voltages so that the overhead area due to the on-chip provision of the voltage regulators is minimized. The internal power voltage is distributed to the internal circuits through a looped main power line, with an electrode pad for connecting an external capacitor for stabilizing the internal power voltage being provided on it, so that the internal power voltage is stabilized and the power consumption of the integrated circuit is minimized.
摘要翻译：形成在半导体芯片上的集成电路包括用于降低外部提供的电源电压以产生内部电源电压的电压调节器，以及基于内部电源电压工作的内部电路。电压调节器被放置在缓冲器和保护元件的区域中用于输入/输出信号和电源电压，使得由于电压调节器的片上提供而导致的开销面积被最小化。内部电源电压通过环形主电源线分配到内部电路，电极焊盘用于连接外部电容器，用于稳定其上提供的内部电源电压，从而内部电源电压稳定，功耗集成电路最小化。

9. 发明申请

US20090039846A1 SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：半导体集成电路
公开(公告)号：US20090039846A1
公开(公告)日：2009-02-12
申请号：US12251519
申请日：2008-10-15
申请人： Takayasu Ito , Mitsuru Hiraki , Satoshi Baba , Kenichi Fukui
发明人： Takayasu Ito , Mitsuru Hiraki , Satoshi Baba , Kenichi Fukui
IPC分类号： G05F1/565
CPC分类号： H03K17/22 , H03K17/163
摘要： In order to set with a high precision the value of rush current flowing in the power switch circuit at the time of turning “on” the power, the internal circuit Int_Cir of the LSI is supplied with the internal source voltage Vint from the output transistor MP1 of the regulator VReg of the power switch circuit PSWC. The power switch circuit PSWC includes a control circuit CNTRLR and a start-up circuit STC. During the initial period Tint following the turning “on” of the power supply, the start-up circuit STC controls the output transistor MP1 and reduces the primary rush current so that the output current Isup of the output transistor MP1 may represent an approximately constant increment as the time passes. The difference ΔV between the internal current voltage due to the charge of load capacitance C with the output current Isup controlled by the start-up circuit STC and the current voltage Vint from the regulator VReg is set within the predetermined limit to reduce the secondary rush current.
摘要翻译：为了高精度地设定在接通电源时在功率开关电路中流动的冲击电流的值，LSI的内部电路Int_Cir从输出晶体管MP1被提供内部源极电压Vint 的稳压器VReg的电源开关电路PSWC。电源开关电路PSWC包括控制电路CNTRLR和启动电路STC。在电源的“接通”之后的初始时段期间，启动电路STC控制输出晶体管MP1并降低初级冲击电流，使得输出晶体管MP1的输出电流Isup可以表示近似恒定的增量随着时间的流逝。由负载电容C的内部电流电压与由启动电路STC控制的输出电流Isup和来自调节器VReg的当前电压Vint之间的差值DeltaV设定在预定极限内，以减小二次冲击电流。

10. 发明申请

US20080228414A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080228414A1
公开(公告)日：2008-09-18
申请号：US12122715
申请日：2008-05-18
申请人： Takayasu ITO , Mitsuru Hiraki , Masashi Horiguchi , Toyohiro Shimogawa
发明人： Takayasu ITO , Mitsuru Hiraki , Masashi Horiguchi , Toyohiro Shimogawa
IPC分类号： G06F19/00
CPC分类号： G06F1/3203 , G06F1/3287 , Y02D10/171
摘要： The present invention provides a semiconductor device capable of realizing power saving and improvement in reliability or reduction in area. A semiconductor device includes: a power switch connecting an internal power supply in which power is not shut down and an internal power supply in which power is shut down; and an internal voltage determining circuit for determining voltage of the internal power supply in which power is shut down. Voltage of the internal power supply in which power is shut down is generated from voltage of an external power supply by using a regulator circuit. When the power of the internal power supply is interrupted, the power switch is turned off, the regulator circuit is turned off, and an output of the regulator circuit is shorted to a ground potential. When the power of the internal power supply is resumed, the regulator circuit is turned on, shorting is cancelled, the increased voltage of the internal power supply is determined by the internal voltage determining circuit, operation of a circuit block is started, and the switch is turned on.
摘要翻译：本发明提供一种半导体装置，其能够实现节电，提高可靠性或减小面积。一种半导体装置，包括：连接不断电的内部电源的电源开关和断电的内部电源; 以及用于确定电源关闭的内部电源的电压的内部电压确定电路。通过使用调节电路从外部电源的电压产生关闭电源的内部电源的电压。当内部电源的电源中断时，电源开关关闭，调节器电路关闭，调节器电路的输出短路到地电位。当恢复内部电源的电源时，调节器电路接通，短路被取消，内部电源的增加的电压由内部电压确定电路确定，电路块的操作开始，开关打开

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