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1. 发明授权

US06781164B2 Semiconductor element 有权
标题翻译：半导体元件
公开(公告)号：US06781164B2
公开(公告)日：2004-08-24
申请号：US10690290
申请日：2003-10-21
申请人： Yuji Hori , Tomohiko Shibata , Osamu Oda , Mitsuhiro Tanaka
发明人： Yuji Hori , Tomohiko Shibata , Osamu Oda , Mitsuhiro Tanaka
IPC分类号： H01L31072
CPC分类号： H01L29/66318 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/66462 , H01L29/66856
摘要： An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 1011/cm2 or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection. Then, on the AlN film an n-GaN film is epitaxially grown as a conductive layer having a dislocation density of 1010/cm2 or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.
摘要翻译：将作为底层的AlN膜外延生长在具有10 11 / cm 2以下的位错密度和90秒以下的结晶度的X射线的半峰全宽（FWHM）的基板上（002）反射的摇摆曲线。然后，在AlN膜上，将n-GaN膜外延生长为位错密度为10 10 / cm 2以下的导电层，在半高宽度下为150秒以下的结晶度（FWHM ）（002）反射的X射线摇摆曲线，以制造半导体元件。

2. 发明授权

US06583468B2 Semiconductor element 有权
公开(公告)号：US06583468B2
公开(公告)日：2003-06-24
申请号：US10007099
申请日：2001-12-04
申请人： Yuji Hori , Tomohiko Shibata , Osamu Oda , Mitsuhiro Tanaka
发明人： Yuji Hori , Tomohiko Shibata , Osamu Oda , Mitsuhiro Tanaka
IPC分类号： H01L2976
CPC分类号： H01L29/66318 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/66462 , H01L29/66856
摘要： An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 1011/cm2 or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection. Then, on the AlN film an n-GaN film is epitaxially grown as a conductive layer having a dislocation density of 1010/cm2 or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.

3. 发明授权

US06573535B2 Semiconductor light-emitting element 有权
公开(公告)号：US06573535B2
公开(公告)日：2003-06-03
申请号：US09997996
申请日：2001-11-30
申请人： Yuji Hori , Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda
发明人： Yuji Hori , Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda
IPC分类号： H01L3112
CPC分类号： H01L33/325 , H01L33/08
摘要： In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions.

4. 再颁专利

USRE40163E1 Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：USRE40163E1
公开(公告)日：2008-03-25
申请号：US11083331
申请日：2005-03-17
申请人： Yuji Hori , Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda
发明人： Yuji Hori , Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda
IPC分类号： H01L31/12
CPC分类号： H01L33/06 , H01L33/007 , H01L33/12 , H01L33/18
摘要： In a semiconductor light-emitting element, an underlayer is composed of a high crystallinity AlN layer having a FWHM in X-ray rocking curve of 90 seconds or below, and a first cladding layer is composed of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer.
摘要翻译：在半导体发光元件中，底层由X射线摇摆曲线中具有FWHM的90秒以下的高结晶性AlN层构成，第一包层由n-AlGaN层构成。发光层由由i-GaN制成的基底层和在基底层中分离的由i-AlGaInN构成的多个岛状单晶部分构成。

5. 发明授权

US06605895B2 Light-emitting element 有权
公开(公告)号：US06605895B2
公开(公告)日：2003-08-12
申请号：US10097277
申请日：2002-03-15
申请人： Yuji Hori , Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda
发明人： Yuji Hori , Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda
IPC分类号： H01J6304
CPC分类号： H01J63/04 , H01J63/06 , H01L33/32 , H01L33/502
摘要： A light-emitting element includes a light-emitting layer including a base layer made of a first nitride semiconductor and plural island-shaped crystal portions made of a second nitride semiconductor, and an irradiation source of electron beam which is disposed so as to be opposite to the light-emitting layer. Then, electron-electron hole pairs in the light-emitting layer are excited through the irradiation of electron beam from the irradiation source, to generate and emit a light.

6. 发明授权

US06275123B1 Surface acoustic wave matched filter with dispersive substrate and saw group velocity based output electrode design 有权
标题翻译：表面声波匹配滤波器与分散基板和锯组速度输出电极设计
公开(公告)号：US06275123B1
公开(公告)日：2001-08-14
申请号：US09351944
申请日：1999-07-12
申请人： Mitsuhiro Tanaka , Tomohiko Shibata , Yuji Hori
发明人： Mitsuhiro Tanaka , Tomohiko Shibata , Yuji Hori
IPC分类号： H03H964
CPC分类号： H03H9/6416
摘要： A surface acoustic wave matched filter for use in a spread spectrum communication system is disclosed. The surface acoustic wave matched filter includes a substrate having dispersity and is composed of a sapphire main body and a piezoelectric aluminum nitride. A tap distance L of an output side electrode is designed on the basis of a group velocity vg instead of a phase velocity vs in order to match the tap distance L with an input spread spectrum signal and to improve a correlation peak level of an output demodulated signal. When the tap distance L is set to satisfy a condition of vg/f1×0.97≦L≦vg/f1×1.02, a decrease in the correlation peak level of the matched filter can be improved from 7 dB to a value smaller than 3 dB, and S/N of the output demodulated signal can be increased. Thus, the disclosed device renders it no longer necessary to process the output demodulated signal by a complicated and power consuming circuit.
摘要翻译：公开了一种用于扩频通信系统中的表面声波匹配滤波器。声表面波匹配滤波器包括具有分散性并由蓝宝石主体和压电氮化铝构成的基板。基于组速度vg而不是相位速度vs来设计输出侧电极的抽头距离L，以使抽头距离L与输入扩频信号相匹配，并且提高输出解调的相关峰值电平信号。当抽头距离L被设置为满足vg / f1x0.97 <= L <= vg / f1x1.02的条件时，匹配滤波器的相关峰值电平的降低可以从7dB提高到小于 3dB，可以提高输出解调信号的S / N。因此，所公开的设备使其不再需要由复杂且耗电的电路来处理输出解调信号。

7. 再颁专利

USRE40485E1 Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：USRE40485E1
公开(公告)日：2008-09-09
申请号：US11140524
申请日：2005-05-27
申请人： Yuji Hori , Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda
发明人： Yuji Hori , Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： H01L33/325 , H01L33/08
摘要： In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions.
摘要翻译：在半导体发光元件中，底层由AlN层构成，第一包层由n-AlGaN层构成。发光层由由i-GaN制成的基底层和在基底层中分离的由i-AlGaInN构成的多个岛状单晶部分构成。然后，在基底层和/或岛状单晶部分中并入至少一种稀土金属元素。

8. 发明授权

US06707076B2 Semiconductor element 有权
公开(公告)号：US06707076B2
公开(公告)日：2004-03-16
申请号：US10370350
申请日：2003-02-18
申请人： Yuji Hori , Tomohiko Shibata , Osamu Oda , Mitsuhiro Tanaka
发明人： Yuji Hori , Tomohiko Shibata , Osamu Oda , Mitsuhiro Tanaka
IPC分类号： H01L29739
CPC分类号： H01L29/66318 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/66462 , H01L29/66856
摘要： An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 1011/cm2 or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection. Then, on the AlN film an n-GaN film is epitaxially grown as a conductive layer having a dislocation density of 1010/cm2 or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.

9. 发明授权

US06693302B2 Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US06693302B2
公开(公告)日：2004-02-17
申请号：US10035001
申请日：2001-12-28
申请人： Yuji Hori , Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda
发明人： Yuji Hori , Tomohiko Shibata , Mitsuhiro Tanaka , Osamu Oda
IPC分类号： H01L2715
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/12
摘要： In a semiconductor light-emitting element, an underlayer is made of a high crystallinity Al-including semiconducting nitride material of which the FWHM is 90 seconds or below in full width at half maximum of an X-ray rocking curve. A light-emitting layer is made of a semiconducting nitride material including it least one element selected from the group consisting of Al, Ga and In and containing at least one element selected from rare earth metal elements. The light-emitting layer can be omitted if at least one element selected from rare earth metal elements is incorporated in the underlayer.
摘要翻译：在半导体发光元件中，底层由X射线摇摆曲线的半高宽度的FWHM为90秒以下的高结晶性Al的半导体氮化物材料构成。发光层由包含选自Al，Ga和In中的至少一种元素的半导体氮化物材料制成，并且含有选自稀土金属元素中的至少一种元素。如果从稀土金属元素中选择至少一种元素并入底层中，则可以省略发光层。

10. 发明授权

US06677708B2 Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US06677708B2
公开(公告)日：2004-01-13
申请号：US10024664
申请日：2001-12-17
申请人： Yuji Hori , Tomohiko Shibata , Osamu Oda , Mitsuhiro Tanaka
发明人： Yuji Hori , Tomohiko Shibata , Osamu Oda , Mitsuhiro Tanaka
IPC分类号： H01J162
CPC分类号： H01L33/325 , H01L33/007 , H01L33/12
摘要： In a semi-conductor light-emitting element, an underlayer is made of a high crystallinity Al-including semi-conducting nitride material of which the FWHM is 90 second or below in X-ray rocking curve. Then, a light-emitting layer is made of a semi-conducting nitride material including at least one element selected from the group consisting of Al, Ga and In and containing at least one element selected from rare earth metal elements and transition metal elements.
摘要翻译：在半导体发光元件中，底层由X射线摇摆曲线中FWHM为90秒以下的高结晶性Al-包含半导体氮化物材料制成。然后，发光层由半导体氮化物材料制成，该半导体氮化物材料包括选自由Al，Ga和In组成的组中的至少一种元素，并含有至少一种选自稀土金属元素和过渡金属元素的元素。

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