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1. 发明申请

US20140054653A1 TWO-STEP SHALLOW TRENCH ISOLATION (STI) PROCESS 有权
标题翻译：两步骤快速分离（STI）过程
公开(公告)号：US20140054653A1
公开(公告)日：2014-02-27
申请号：US13594254
申请日：2012-08-24
申请人： Min Hao Hong , You-Hua Chou , Chih-Tsung Lee , Shiu-Ko JangJian , Miao-Cheng Liao , Hsiang-Hsiang Ko , Chen-Ming Huang
发明人： Min Hao Hong , You-Hua Chou , Chih-Tsung Lee , Shiu-Ko JangJian , Miao-Cheng Liao , Hsiang-Hsiang Ko , Chen-Ming Huang
IPC分类号： H01L29/04 , H01L21/762
CPC分类号： H01L21/76224 , H01L21/02538 , H01L21/02609 , H01L21/0334 , H01L21/31053 , H01L21/762 , H01L21/76232 , H01L21/823412 , H01L21/823481 , H01L29/0653 , H01L29/66477 , H01L29/66651 , H01L29/78
摘要： An integrated circuit device and a process for making the integrated circuit device. The integrated circuit device including a substrate having a trench formed therein, a first layer of isolation material occupying the trench, a second layer of isolation material formed over the first layer of isolation material, an epitaxially-grown silicon layer on the substrate and horizontally adjacent the second layer of isolation material, and a gate structure formed on the epitaxially-grown silicon, the gate structure defining a channel.
摘要翻译：集成电路器件和用于制造集成电路器件的工艺。集成电路器件包括其中形成有沟槽的衬底，占据沟槽的隔离材料的第一层，在第一隔离材料层上形成的隔离材料的第二层，衬底上的外延生长的硅层，并且水平相邻第二层隔离材料，以及形成在外延生长的硅上的栅极结构，栅极结构限定沟道。

2. 发明授权

US08692299B2 Two-step shallow trench isolation (STI) process 有权
标题翻译：两步浅沟槽隔离（STI）工艺
公开(公告)号：US08692299B2
公开(公告)日：2014-04-08
申请号：US13594254
申请日：2012-08-24
申请人： Min Hao Hong , You-Hua Chou , Chih-Tsung Lee , Shiu-Ko JangJian , Miao-Cheng Liao , Hsiang Hsiang Ko , Chen-Ming Huang
发明人： Min Hao Hong , You-Hua Chou , Chih-Tsung Lee , Shiu-Ko JangJian , Miao-Cheng Liao , Hsiang Hsiang Ko , Chen-Ming Huang
IPC分类号： H01L27/085
CPC分类号： H01L21/76224 , H01L21/02538 , H01L21/02609 , H01L21/0334 , H01L21/31053 , H01L21/762 , H01L21/76232 , H01L21/823412 , H01L21/823481 , H01L29/0653 , H01L29/66477 , H01L29/66651 , H01L29/78
摘要： An integrated circuit device and a process for making the integrated circuit device. The integrated circuit device including a substrate having a trench formed therein, a first layer of isolation material occupying the trench, a second layer of isolation material formed over the first layer of isolation material, an epitaxially-grown silicon layer on the substrate and horizontally adjacent the second layer of isolation material, and a gate structure formed on the epitaxially-grown silicon, the gate structure defining a channel.
摘要翻译：集成电路器件和用于制造集成电路器件的工艺。集成电路器件包括其中形成有沟槽的衬底，占据沟槽的隔离材料的第一层，在第一隔离材料层上形成的隔离材料的第二层，衬底上的外延生长的硅层，并且水平相邻第二层隔离材料，以及形成在外延生长的硅上的栅极结构，栅极结构限定沟道。

3. 发明申请

US20130069233A1 Reverse Damascene Process 有权
公开(公告)号：US20130069233A1
公开(公告)日：2013-03-21
申请号：US13234299
申请日：2011-09-16
申请人： You-Hua Chou , Min Hao Hong , Jian-Shin Tsai , Miao-Cheng Liao , Hsiang Hsiang Ko
发明人： You-Hua Chou , Min Hao Hong , Jian-Shin Tsai , Miao-Cheng Liao , Hsiang Hsiang Ko
IPC分类号： H01L23/52 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/768 , H01L21/76841 , H01L21/76852 , H01L21/76885 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure relates to a method of forming a back-end-of-the-line metallization layer. The method is performed by forming a plurality of freestanding metal layer structures (i.e., metal layer structures not surrounded by a dielectric material) on a semiconductor substrate within an area defined by a patterned photoresist layer. A diffusion barrier layer is deposited onto the metal layer structure in a manner such that the diffusion barrier layer conforms to the top and sides of the metal layer structure. A dielectric material is formed on the surface of the substrate to fill areas between metal layer structures. The substrate is planarized to remove excess metal and dielectric material and to expose the top of the metal layer structure.

4. 发明授权

US08518818B2 Reverse damascene process 有权
标题翻译：反向镶嵌工艺
公开(公告)号：US08518818B2
公开(公告)日：2013-08-27
申请号：US13234299
申请日：2011-09-16
申请人： You-Hua Chou , Min Hao Hong , Jian-Shin Tsai , Miao-Cheng Liao , Hsiang Hsiang Ko
发明人： You-Hua Chou , Min Hao Hong , Jian-Shin Tsai , Miao-Cheng Liao , Hsiang Hsiang Ko
IPC分类号： H01L21/4763
CPC分类号： H01L23/53238 , H01L21/768 , H01L21/76841 , H01L21/76852 , H01L21/76885 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure relates to a method of forming a back-end-of-the-line metallization layer. The method is performed by forming a plurality of freestanding metal layer structures (i.e., metal layer structures not surrounded by a dielectric material) on a semiconductor substrate within an area defined by a patterned photoresist layer. A diffusion barrier layer is deposited onto the metal layer structure in a manner such that the diffusion barrier layer conforms to the top and sides of the metal layer structure. A dielectric material is formed on the surface of the substrate to fill areas between metal layer structures. The substrate is planarized to remove excess metal and dielectric material and to expose the top of the metal layer structure.
摘要翻译：本公开涉及一种形成后端金属化层的方法。通过在由图案化的光致抗蚀剂层限定的区域内的半导体衬底上形成多个独立金属层结构（即，不被电介质材料包围的金属层结构）来执行该方法。扩散阻挡层以使得扩散阻挡层符合金属层结构的顶部和侧面的方式沉积到金属层结构上。在基板的表面上形成电介质材料以填充金属层结构之间的区域。将衬底平坦化以除去多余的金属和电介质材料并露出金属层结构的顶部。

5. 发明授权

US08796105B2 Method and apparatus for preparing polysilazane on a semiconductor wafer 有权
标题翻译：在半导体晶片上制备聚硅氮烷的方法和装置
公开(公告)号：US08796105B2
公开(公告)日：2014-08-05
申请号：US13558284
申请日：2012-07-25
申请人： You-Hua Chou , Chih-Tsung Lee , Min-Hao Hong , Ming-Huei Lien , Chih-Jen Wu , Chen-Ming Huang
发明人： You-Hua Chou , Chih-Tsung Lee , Min-Hao Hong , Ming-Huei Lien , Chih-Jen Wu , Chen-Ming Huang
IPC分类号： H01L21/76
CPC分类号： H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02323 , H01L21/02337 , H01L21/76227
摘要： A method for depositing a polysilazane on a semiconductor wafer is provided. The method includes steps of disposing a silazane onto the semiconductor wafer, and heating the silazane to form the polysilazane on the semiconductor wafer. An apparatus for preparing a polysilazane on a semiconductor wafer is also provided.
摘要翻译：提供了一种在半导体晶片上沉积聚硅氮烷的方法。该方法包括将硅氮烷置于半导体晶片上，并加热硅氮烷以在半导体晶片上形成聚硅氮烷的步骤。还提供了一种在半导体晶片上制备聚硅氮烷的设备。

6. 发明申请

US20140030866A1 METHOD AND APPARATUS FOR PREPARING POLYSILAZANE ON A SEMICONDUCTOR WAFER 有权
标题翻译：在半导体波长处制备聚硅氧烷的方法和装置
公开(公告)号：US20140030866A1
公开(公告)日：2014-01-30
申请号：US13558284
申请日：2012-07-25
申请人： You-Hua Chou , Chih-Tsung Lee , Min-Hao Hong , Ming-Huei Lien , Chih-Jen Wu , Chen-Ming Huang
发明人： You-Hua Chou , Chih-Tsung Lee , Min-Hao Hong , Ming-Huei Lien , Chih-Jen Wu , Chen-Ming Huang
IPC分类号： H01L21/762 , H01L21/314
CPC分类号： H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02323 , H01L21/02337 , H01L21/76227
摘要： A method for depositing a polysilazane on a semiconductor wafer is provided. The method includes steps of disposing a silazane onto the semiconductor wafer, and heating the silazane to form the polysilazane on the semiconductor wafer. An apparatus for preparing a polysilazane on a semiconductor wafer is also provided.
摘要翻译：提供了一种在半导体晶片上沉积聚硅氮烷的方法。该方法包括将硅氮烷置于半导体晶片上，并加热硅氮烷以在半导体晶片上形成聚硅氮烷的步骤。还提供了一种在半导体晶片上制备聚硅氮烷的设备。

7. 发明授权

US09982340B2 Shower head apparatus and method for controlling plasma or gas distribution 有权
公开(公告)号：US09982340B2
公开(公告)日：2018-05-29
申请号：US13439127
申请日：2012-04-04
申请人： Chih-Tsung Lee , Hung Jui Chang , You-Hua Chou , Shiu-Ko Jangjian , Chung-En Kao , Ming-Chin Tsai , Huan-Wen Lai
发明人： Chih-Tsung Lee , Hung Jui Chang , You-Hua Chou , Shiu-Ko Jangjian , Chung-En Kao , Ming-Chin Tsai , Huan-Wen Lai
IPC分类号： C23C16/44 , C23C16/30 , C23C16/509 , H01J37/32
CPC分类号： C23C16/4412 , C23C16/308 , C23C16/5096 , H01J37/32091 , H01J37/3244
摘要： An apparatus comprises: a shower head having a supply plenum for supplying the gas to the chamber and a vacuum manifold fluidly coupled to the supply plenum; and at least one vacuum system fluidly coupled to the vacuum manifold of the shower head.

8. 发明授权

US08497183B2 Devices having a cavity structure and related methods 有权
标题翻译：具有腔结构和相关方法的器件
公开(公告)号：US08497183B2
公开(公告)日：2013-07-30
申请号：US12662681
申请日：2010-04-28
申请人： You-Hua Chou , Hsiang Hsiang Ko , Hung Jui Chang , Yi Ming Chen , Hsien-Wei Lin
发明人： You-Hua Chou , Hsiang Hsiang Ko , Hung Jui Chang , Yi Ming Chen , Hsien-Wei Lin
IPC分类号： H01L21/76
CPC分类号： H01M8/1097 , H01M2008/1095 , Y02P70/56
摘要： A method of making a device. The method comprises providing a first layer including a first material on a surface of a substrate, removing a portion of the first layer and a corresponding portion of the substrate to form an opening in the first layer and a recessed portion in the surface of the substrate, and supplying a liquid mixture to the opening and the recessed portion. The liquid mixture includes a first component having a first chemical affinity to the first material and a second component having a second chemical affinity to the first material, which is smaller than the first chemical affinity. The method also includes removing the second component and forming a second layer including the first component. The second layer covers the recessed portion and adheres to an edge portion of the first layer, such that the second layer and the recessed portion define a cavity.
摘要翻译：制造装置的方法。该方法包括在衬底的表面上提供包括第一材料的第一层，去除第一层的一部分和衬底的对应部分以在第一层中形成开口，并且在衬底的表面中形成凹陷部分并且将液体混合物供应到开口和凹部。液体混合物包括对第一材料具有第一化学亲和力的第一组分和对第一材料具有第二化学亲和力的第二组分，其小于第一化学亲和力。该方法还包括移除第二部件并形成包括第一部件的第二层。第二层覆盖凹部并粘附到第一层的边缘部分，使得第二层和凹部限定一个空腔。

9. 发明申请

US20100255187A1 Devices having a cavity structure and related methods 有权
标题翻译：具有腔结构和相关方法的器件
公开(公告)号：US20100255187A1
公开(公告)日：2010-10-07
申请号：US12662681
申请日：2010-04-28
申请人： You-Hua Chou , Hsiang Hsiang Ko , Hung Jui Chang , Yi Ming Chen , Hsien-Wei Lin
发明人： You-Hua Chou , Hsiang Hsiang Ko , Hung Jui Chang , Yi Ming Chen , Hsien-Wei Lin
IPC分类号： B05D5/12
CPC分类号： H01M8/1097 , H01M2008/1095 , Y02P70/56
摘要： A structure having a cavity or enclosed space is fabricated by forming a recessed region in a surface of a substrate, and providing a first layer adjacent the recessed region. A liquid mixture including first and second components is supplied to the recessed region. The first component has a higher chemical affinity to the first layer than the second component such that the first component separates from the second component and adheres to an edge portion of the first layer. The substrate may then be heated to remove the second component from the recessed region through evaporation. As a result, the first component remains as a second layer adhering to the edge portion of the first layer and covering the recessed region, thereby defining a cavity or enclosed space with the recessed region. Unique structures including such cavities may be employed to realize a capacitor having a fluid, as opposed to solid, dielectric material, in order to increase the capacitance of the capacitor. Alternatively, such cavities may confine the flow of gases within narrow grooves of a substrate to realize a fuel cell having reduced size.
摘要翻译：通过在衬底的表面中形成凹陷区域并且提供与凹陷区域相邻的第一层来制造具有空腔或封闭空间的结构。包含第一和第二组分的液体混合物被供应到凹陷区域。第一组分比第二组分具有比第一组分更高的化学亲和力，使得第一组分与第二组分分离并粘附到第一层的边缘部分。然后可以加热衬底以通过蒸发从凹陷区域去除第二组分。结果，第一部件保持作为粘附到第一层的边缘部分并覆盖凹陷区域的第二层，由此限定具有凹陷区域的空腔或封闭空间。包括这种空穴的独特结构可以用于实现与固体介电材料相反的流体的电容器，以便增加电容器的电容。或者，这样的空腔可以将气体流限制在基板的窄槽内，以实现具有减小的尺寸的燃料电池。

10. 发明授权

US08953298B2 Electrostatic chuck robotic system 有权
标题翻译：静电吸盘机器人系统
公开(公告)号：US08953298B2
公开(公告)日：2015-02-10
申请号：US13307089
申请日：2011-11-30
申请人： Chung-En Kao , You-Hua Chou , Chih-Tsung Lee , Ming-Shiou Kuo
发明人： Chung-En Kao , You-Hua Chou , Chih-Tsung Lee , Ming-Shiou Kuo
IPC分类号： H01L21/683 , H01T23/00
CPC分类号： H01L21/6831 , H01L21/67742
摘要： A workpiece transfer system has a plurality of joints having a bearing and a primary and secondary transformer coil, wherein power provided to the primary transformer coil and secondary transformer coil of each joint produces mutual inductance between the primary and secondary transformer coil of the respective joint. A first pair of arms are rotatably coupled to a blade by a first pair of the joints, wherein the primary transformer coil of each of the first pair of joints is operably coupled to the first pair of arms, and the secondary transformer coil of each of the first pair of joints is operably coupled to the blade and an electrode beneath a dielectric workpiece retaining surface of the blade. The electrode is contactlessly energized through the transformer coils of the joint and the blade can chuck and de-chuck a workpiece by reversing current directions and by voltage adjustment.
摘要翻译：工件传送系统具有多个具有轴承和初级和次级变压器线圈的接头，其中提供给每个接头的初级变压器线圈和次级变压器线圈的功率在相应接头的主变压器线圈和次级变压器线圈之间产生互感。第一对臂通过第一对接头可旋转地联接到叶片，其中第一对接头中的每一个的主变压器线圈可操作地耦合到第一对臂，并且每个臂的次级变压器线圈第一对接头可操作地联接到叶片和位于叶片的介电工件保持表面下方的电极。电极通过接头的变压器线圈非接触地通电，并且刀片可以通过反向电流方向和电压调节来夹紧和去夹紧工件。

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