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1. 发明申请

US20100276649A1 PROCESS FOR PRODUCING METALLIC-NANOPARTICLE INORGANIC COMPOSITE AND METALLIC-NANOPARTICLE INORGANIC COMPOSITE 有权
标题翻译：生产金属纳米无机复合材料和金属纳米材料无机复合材料的方法
公开(公告)号：US20100276649A1
公开(公告)日：2010-11-04
申请号：US12237743
申请日：2008-09-25
申请人： Miho MARUYAMA , Kenji Todori , Tsukasa Tada , Reiko Yoshimura , Yasuyuki Hotta , Ko Yamada , Masakazu Yamagiwa
发明人： Miho MARUYAMA , Kenji Todori , Tsukasa Tada , Reiko Yoshimura , Yasuyuki Hotta , Ko Yamada , Masakazu Yamagiwa
IPC分类号： B05D3/10 , B05D3/00 , B05D3/02 , G02F1/00
CPC分类号： C23C18/1212 , B82Y30/00 , C01B33/12 , C01B33/126 , C01B33/14 , C01B33/18 , C01P2002/82 , C01P2004/04 , C01P2004/64 , C01P2006/16 , C22C5/06 , C22C13/00 , C23C18/1216 , C23C18/1254 , C23C18/1644 , C23C18/1692 , C23C18/1879 , C23C18/1889 , C23C18/42 , Y10T428/24413
摘要： A process for producing a metallic-nanoparticle inorganic composite 10 includes an oxide film formation step in which an oxide film 14 having micropores is formed on a substrate by a sol-gel method in which a metal alkoxide is partly hydrolyzed by the action of an acid catalyst, a tin deposition step in which the oxide film 14 is brought into contact with an acidic aqueous solution of tin chloride, an excess Sn2+ ion removal step in which Sn2+ ions are removed from the micropores, a metallic-nanoparticle deposition step in which the oxide film 14 is brought into contact with an aqueous solution of a metal chelate to deposit metallic nanoparticles 12 in the micropores, and an excess metal ion removal step in which metal ions are removed from the micropores; and a metallic-nanoparticle inorganic composite 10 is produced by this process.
摘要翻译：金属纳米粒子无机复合体10的制造方法包括氧化膜形成工序，其中通过溶胶 - 凝胶法在基材上形成具有微孔的氧化物膜14，其中金属醇盐通过酸的作用被部分水解催化剂，其中氧化物膜14与酸性氯化锡水溶液接触的锡沉积步骤，其中从微孔中除去Sn 2+离子的过量Sn 2+离子去除步骤，金属纳米颗粒沉积步骤，其中使氧化膜14与金属螯合物的水溶液接触，以将金属纳米颗粒12沉积在微孔中，并且过剩金属离子去除步骤，其中从微孔中除去金属离子; 通过该方法制造金属纳米粒子无机复合体10。

2. 发明申请

US20100072420A1 METHOD OF PRODUCING A METALLIC NANOPARTICLE INORGANIC COMPOSITE, METALLIC NANOPARTICLE INORGANIC COMPOSITE, AND PLASMON WAVEGUIDE 有权
标题翻译：金属纳米无机复合材料的生产方法，金属纳米材料无机复合材料和等离子体波导
公开(公告)号：US20100072420A1
公开(公告)日：2010-03-25
申请号：US12500691
申请日：2009-07-10
申请人： Miho Maruyama , Kenji Todori , Tsukasa Tada , Reiko Yoshimura , Yasuyuki Hotta , Ko Yamada , Masakazu Yamagiwa
发明人： Miho Maruyama , Kenji Todori , Tsukasa Tada , Reiko Yoshimura , Yasuyuki Hotta , Ko Yamada , Masakazu Yamagiwa
IPC分类号： C09K3/00
CPC分类号： G02B6/1226 , B82Y20/00 , C01B33/12 , C01G23/00 , C01G23/053 , Y10T428/24413
摘要： A method using a chemical synthesis method to produce a metallic nanoparticle inorganic composite having fine metallic nanoparticles that are uniformly dispersed at a high density in a solidified matrix, a metallic nanoparticle inorganic composite, and a plasmon waveguide using this composite are provided. Thus, a method including: preparing a precursor solution, applying the precursor solution onto a substrate, and then hydrolyzing the precursor solution to form an oxide film having fine pores, bringing the oxide film into contact with an acidic aqueous solution of tin chloride to chemically adsorb Sn2+ ions in the fine pores, removing an excess of the Sn2+ ions, bringing the oxide film into contact with an aqueous metal chelate solution to precipitate metallic nanoparticles in the fine pores, and removing an excess of ions of the metal is provided.
摘要翻译：提供了一种使用化学合成方法制备具有金属纳米颗粒的金属纳米颗粒无机复合材料，该金属纳米颗粒无机复合材料使用这种复合材料在固化基体，金属纳米颗粒无机复合材料和等离子体波导中均匀分散在高密度下。因此，一种方法包括：制备前体溶液，将前体溶液施加到基底上，然后水解前体溶液以形成具有细孔的氧化膜，使氧化膜与氯化锡的酸性水溶液接触化学吸附细孔中的Sn2 +离子，去除过量的Sn2 +离子，使氧化膜与金属螯合溶液接触，使细孔中的金属纳米粒子析出，并除去过量的金属离子。

3. 发明授权

US07972539B2 Process for producing metallic-nanoparticle inorganic composite and metallic-nanoparticle inorganic composite 有权
标题翻译：制备金属纳米颗粒无机复合材料和金属纳米颗粒无机复合材料的方法
公开(公告)号：US07972539B2
公开(公告)日：2011-07-05
申请号：US12237743
申请日：2008-09-25
申请人： Miho Maruyama , Kenji Todori , Tsukasa Tada , Reiko Yoshimura , Yasuyuki Hotta , Ko Yamada , Masakazu Yamagiwa
发明人： Miho Maruyama , Kenji Todori , Tsukasa Tada , Reiko Yoshimura , Yasuyuki Hotta , Ko Yamada , Masakazu Yamagiwa
IPC分类号： H01B1/00 , B44C5/04 , B05D3/04
CPC分类号： C23C18/1212 , B82Y30/00 , C01B33/12 , C01B33/126 , C01B33/14 , C01B33/18 , C01P2002/82 , C01P2004/04 , C01P2004/64 , C01P2006/16 , C22C5/06 , C22C13/00 , C23C18/1216 , C23C18/1254 , C23C18/1644 , C23C18/1692 , C23C18/1879 , C23C18/1889 , C23C18/42 , Y10T428/24413
摘要： A process for producing a metallic-nanoparticle inorganic composite 10 includes an oxide film formation step in which an oxide film 14 having micropores is formed on a substrate by a sol-gel method in which a metal alkoxide is partly hydrolyzed by the action of an acid catalyst, a tin deposition step in which the oxide film 14 is brought into contact with an acidic aqueous solution of tin chloride, an excess Sn2+ ion removal step in which Sn2+ ions are removed from the micropores, a metallic-nanoparticle deposition step in which the oxide film 14 is brought into contact with an aqueous solution of a metal chelate to deposit metallic nanoparticles 12 in the micropores, and an excess metal ion removal step in which metal ions are removed from the micropores; and a metallic-nanoparticle inorganic composite 10 is produced by this process.
摘要翻译：金属纳米粒子无机复合体10的制造方法包括氧化膜形成工序，其中通过溶胶 - 凝胶法在基材上形成具有微孔的氧化物膜14，其中金属醇盐通过酸的作用被部分水解催化剂，其中氧化物膜14与酸性氯化锡水溶液接触的锡沉积步骤，其中从微孔中除去Sn 2+离子的过量Sn 2+离子去除步骤，金属纳米颗粒沉积步骤，其中使氧化膜14与金属螯合物的水溶液接触，以将金属纳米颗粒12沉积在微孔中，并且过剩金属离子去除步骤，其中从微孔中除去金属离子; 通过该方法制造金属纳米粒子无机复合体10。

4. 发明授权

US08303853B2 Method of producing a metallic nanoparticle inorganic composite, metallic nanoparticle inorganic composite, and plasmon waveguide 有权
标题翻译：制备金属纳米颗粒无机复合材料，金属纳米颗粒无机复合材料和等离子体波导的方法
公开(公告)号：US08303853B2
公开(公告)日：2012-11-06
申请号：US12500691
申请日：2009-07-10
申请人： Miho Maruyama , Kenji Todori , Tsukasa Tada , Reiko Yoshimura , Yasuyuki Hotta , Ko Yamada , Masakazu Yamagiwa
发明人： Miho Maruyama , Kenji Todori , Tsukasa Tada , Reiko Yoshimura , Yasuyuki Hotta , Ko Yamada , Masakazu Yamagiwa
IPC分类号： H01B1/02 , H01B1/08 , H01B1/22 , B05D3/04
CPC分类号： G02B6/1226 , B82Y20/00 , C01B33/12 , C01G23/00 , C01G23/053 , Y10T428/24413
摘要： A method using a chemical synthesis method to produce a metallic nanoparticle inorganic composite having fine metallic nanoparticles that are uniformly dispersed at a high density in a solidified matrix, a metallic nanoparticle inorganic composite, and a plasmon waveguide using this composite are provided. Thus, a method including: preparing a precursor solution, applying the precursor solution onto a substrate, and then hydrolyzing the precursor solution to form an oxide film having fine pores, bringing the oxide film into contact with an acidic aqueous solution of tin chloride to chemically adsorb Sn2+ ions in the fine pores, removing an excess of the Sn2+ ions, bringing the oxide film into contact with an aqueous metal chelate solution to precipitate metallic nanoparticles in the fine pores, and removing an excess of ions of the metal is provided.
摘要翻译：提供了一种使用化学合成方法制备具有金属纳米颗粒的金属纳米颗粒无机复合材料，该金属纳米颗粒无机复合材料使用这种复合材料在固化基体，金属纳米颗粒无机复合材料和等离子体波导中均匀分散在高密度下。因此，一种方法包括：制备前体溶液，将前体溶液施加到基底上，然后水解前体溶液以形成具有细孔的氧化膜，使氧化膜与氯化锡的酸性水溶液接触化学吸附细孔中的Sn2 +离子，去除过量的Sn2 +离子，使氧化膜与金属螯合溶液接触，使细孔中的金属纳米粒子析出，并除去过量的金属离子。

5. 发明授权

US07738752B2 Optical waveguide system 有权
标题翻译：光波导系统
公开(公告)号：US07738752B2
公开(公告)日：2010-06-15
申请号：US12496616
申请日：2009-07-01
申请人： Masakazu Yamagiwa , Kenji Todori , Reiko Yoshimura , Miho Maruyama , Kou Yamada , Yasuyuki Hotta , Tsukasa Tada
发明人： Masakazu Yamagiwa , Kenji Todori , Reiko Yoshimura , Miho Maruyama , Kou Yamada , Yasuyuki Hotta , Tsukasa Tada
IPC分类号： G02B6/42 , G02B6/12 , G02B6/00 , G02B6/032 , G02B6/10 , H01S5/00 , H01S3/22 , H01S3/03 , H01S3/091 , H01S3/08
CPC分类号： G02F1/01716 , B82Y20/00 , G02B6/10 , G02F2001/01791 , G02F2202/32 , G02F2202/36 , G02F2203/05 , G02F2203/10 , G02F2203/15
摘要： It is made possible to provide an optical waveguide system that has a coupling mechanism capable of selecting a wavelength and has the highest possible conversion efficiency, and that is capable of providing directivity in the light propagation direction. An optical waveguide system includes: a three-dimensional photonic crystalline structure including crystal pillars and having a hollow structure inside thereof; an optical waveguide in which a plurality of metal nanoparticles are dispersed in a dielectric material, the optical waveguide having an end portion inserted between the crystal pillars of the three-dimensional photonic crystalline structure, and containing semiconductor quantum dots that are located adjacent to the metal nanoparticles and emit near-field light when receiving excitation light, the metal nanoparticles exciting surface plasmon when receiving the near-field light; and an excitation light source that emits the excitation light for exciting the semiconductor quantum dots.
摘要翻译：可以提供具有能够选择波长并且具有最高可能的转换效率并且能够提供光传播方向的方向性的耦合机构的光波导系统。光波导系统包括：三维光子晶体结构，其包括晶体柱并且在其内部具有中空结构; 其中多个金属纳米颗粒分散在电介质材料中的光波导，光波导具有插入在三维光子晶体结构的晶体柱之间的端部，并且包含位于金属附近的半导体量子点纳米颗粒并在接收到激发光时发射近场光，当接收到近场光时，金属纳米颗粒激发表面等离子体; 以及发射用于激发半导体量子点的激发光的激发光源。

6. 发明申请

US20120228804A1 NEAR-FIELD EXPOSURE MASK, RESIST PATTERN FORMING METHOD, DEVICE MANUFACTURING METHOD, NEAR-FIELD EXPOSURE METHOD, PATTERN FORMING METHOD, NEAR-FIELD OPTICAL LITHOGRAPHY MEMBER, AND NEAR-FIELD NANOIMPRINT METHOD 有权
标题翻译：近场曝光掩模，电阻图案形成方法，器件制造方法，近场曝光方法，图案形成方法，近场光学成像方法和近场纳米方法
公开(公告)号：US20120228804A1
公开(公告)日：2012-09-13
申请号：US13413163
申请日：2012-03-06
申请人： Naomi Shida , Kenji Todori , Shigehiko Mori , Ko Yamada , Masakazu Yamagiwa , Reiko Yoshimura , Yasuyuki Hotta , Tsukasa Tada , Hiroyuki Kashiwagi , Ikuo Yoneda
发明人： Naomi Shida , Kenji Todori , Shigehiko Mori , Ko Yamada , Masakazu Yamagiwa , Reiko Yoshimura , Yasuyuki Hotta , Tsukasa Tada , Hiroyuki Kashiwagi , Ikuo Yoneda
IPC分类号： G03F1/38 , B29D11/00 , B29C59/02 , G03F7/20 , B29C59/16 , B82Y40/00 , B82Y30/00
CPC分类号： B29C59/16 , B29D11/0074 , B29L2011/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F1/50 , G03F7/0002 , G03F7/70325
摘要： A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.
摘要翻译：根据实施例的近场曝光掩模包括：硅衬底; 以及形成在所述硅基板上的近场光产生单元，所述近场光产生单元是包含选自Au，Al，Ag，Cu，Cr，Sb，W中的至少一种元素的层，Ni，In，Ge，Sn，Pb，Zn，Pd和C，或由其中一些材料制成的层形成的膜叠层。

7. 发明授权

US09029047B2 Near-field exposure mask, resist pattern forming method, device manufacturing method, near-field exposure method, pattern forming method, near-field optical lithography member, and near-field nanoimprint method 有权
标题翻译：近场曝光掩模，抗蚀剂图案形成方法，器件制造方法，近场曝光方法，图案形成方法，近场光刻部件和近场纳米压印法
公开(公告)号：US09029047B2
公开(公告)日：2015-05-12
申请号：US13413163
申请日：2012-03-06
申请人： Naomi Shida , Kenji Todori , Shigehiko Mori , Ko Yamada , Masakazu Yamagiwa , Reiko Yoshimura , Yasuyuki Hotta , Tsukasa Tada , Hiroyuki Kashiwagi , Ikuo Yoneda
发明人： Naomi Shida , Kenji Todori , Shigehiko Mori , Ko Yamada , Masakazu Yamagiwa , Reiko Yoshimura , Yasuyuki Hotta , Tsukasa Tada , Hiroyuki Kashiwagi , Ikuo Yoneda
IPC分类号： G03F1/50 , B82Y30/00 , B82Y40/00 , B82Y10/00 , G03F7/00
CPC分类号： B29C59/16 , B29D11/0074 , B29L2011/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F1/50 , G03F7/0002 , G03F7/70325
摘要： A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.
摘要翻译：根据实施例的近场曝光掩模包括：硅衬底; 以及形成在所述硅基板上的近场光产生单元，所述近场光产生单元是包含选自Au，Al，Ag，Cu，Cr，Sb，W中的至少一种元素的层，Ni，In，Ge，Sn，Pb，Zn，Pd和C，或由其中一些材料制成的层形成的膜叠层。

8. 发明申请

US20110235495A1 OPTICAL HEAD AND OPTICAL RECORDING/REPRODUCING APPARATUS 审中-公开
标题翻译：光学头和光学记录/再现设备
公开(公告)号：US20110235495A1
公开(公告)日：2011-09-29
申请号：US12886701
申请日：2010-09-21
申请人： Kenji Todori , Masakazu Yamagiwa , Ko Yamada
发明人： Kenji Todori , Masakazu Yamagiwa , Ko Yamada
IPC分类号： G11B7/135
CPC分类号： G11B7/1387 , B82Y10/00
摘要： Certain embodiments provide an optical recording/reproducing apparatus including: a slider that has a medium facing surface that faces an optical recording medium, and moves along a recording/reproducing face of the optical recording/reproducing medium; a metal nanoparticle structure that is provided in the medium facing surface of the slider; a light illumination device that illuminates the optical recording medium and the metal nanoparticle structure with light that has polarization components in a direction perpendicular to the recording/reproducing face; and a detection device that detects Rayleigh scattering light that is generated from a portion of the optical recording medium and is intensified by the metal nanoparticle structure, the portion being located close to the metal nanoparticle structure.
摘要翻译：某些实施例提供了一种光学记录/再现装置，包括：滑块，其具有面向光学记录介质的介质面向表面，并沿着光学记录/再现介质的记录/再现面移动; 金属纳米颗粒结构，其设置在所述滑块的介质面向表面中; 照明装置，其以与记录/再现面垂直的方向具有偏振分量的光照射光记录介质和金属纳米颗粒结构; 以及检测装置，其检测由所述光学记录介质的一部分产生并被所述金属纳米颗粒结构增强的瑞利散射光，所述部分位于靠近所述金属纳米颗粒结构的位置。

9. 发明申请

US20130242670A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20130242670A1
公开(公告)日：2013-09-19
申请号：US13601539
申请日：2012-08-31
申请人： Shigeki Hattori , Masakazu Yamagiwa , Masaya Terai , Hideyuki Nishizawa , Koji Asakawa , Yoshiaki Fukuzumi
发明人： Shigeki Hattori , Masakazu Yamagiwa , Masaya Terai , Hideyuki Nishizawa , Koji Asakawa , Yoshiaki Fukuzumi
IPC分类号： H01L29/788 , G11C16/04
CPC分类号： H01L21/28273 , B82Y10/00 , G11C16/0416 , G11C16/0483 , H01L27/11556 , H01L29/42332 , H01L29/7881
摘要： A nonvolatile semiconductor storage device includes a semiconductor layer, a first insulating film formed on the semiconductor layer, a charge storage layer formed on the first insulating film and having fine metal grains, a second insulating film formed on the charge storage layer, and a gate electrode formed on the second insulating film. During a write operation, a differential voltage is applied across the gate electrode and the semiconductor layer to place the gate electrode at a lower voltage than the semiconductor layer and cause a positive electric charge to be stored in the charge storage layer.
摘要翻译：非易失性半导体存储装置包括半导体层，形成在半导体层上的第一绝缘膜，形成在第一绝缘膜上并具有细金属颗粒的电荷存储层，形成在电荷存储层上的第二绝缘膜和栅极电极形成在第二绝缘膜上。在写入操作期间，在栅极电极和半导体层两端施加差分电压，以使栅极电极位于比半导体层低的电压下，并将正电荷存储在电荷存储层中。

10. 发明授权

US09378962B2 Nonvolatile semiconductor storage device having a charge storage layer that includes metal grains 有权
标题翻译：具有包含金属颗粒的电荷存储层的非易失性半导体存储装置
公开(公告)号：US09378962B2
公开(公告)日：2016-06-28
申请号：US13601539
申请日：2012-08-31
申请人： Shigeki Hattori , Masakazu Yamagiwa , Masaya Terai , Hideyuki Nishizawa , Koji Asakawa , Yoshiaki Fukuzumi
发明人： Shigeki Hattori , Masakazu Yamagiwa , Masaya Terai , Hideyuki Nishizawa , Koji Asakawa , Yoshiaki Fukuzumi
IPC分类号： G11C16/04 , H01L21/28 , B82Y10/00 , H01L29/423 , H01L29/788 , H01L27/115
CPC分类号： H01L21/28273 , B82Y10/00 , G11C16/0416 , G11C16/0483 , H01L27/11556 , H01L29/42332 , H01L29/7881
摘要： A nonvolatile semiconductor storage device includes a semiconductor layer, a first insulating film formed on the semiconductor layer, a charge storage layer formed on the first insulating film and having fine metal grains, a second insulating film formed on the charge storage layer, and a gate electrode formed on the second insulating film. During a write operation, a differential voltage is applied across the gate electrode and the semiconductor layer to place the gate electrode at a lower voltage than the semiconductor layer and cause a positive electric charge to be stored in the charge storage layer.
摘要翻译：非易失性半导体存储装置包括半导体层，形成在半导体层上的第一绝缘膜，形成在第一绝缘膜上并具有细金属颗粒的电荷存储层，形成在电荷存储层上的第二绝缘膜和栅极电极形成在第二绝缘膜上。在写入操作期间，在栅极电极和半导体层两端施加差分电压，以使栅极电极位于比半导体层低的电压下，并将正电荷存储在电荷存储层中。

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