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    • 10. 发明授权
    • Semiconductor optical amplifier
    • 半导体光放大器
    • US07859746B2
    • 2010-12-28
    • US12191418
    • 2008-08-14
    • Ken MoritoSusumu YamazakiShinsuke Tanaka
    • Ken MoritoSusumu YamazakiShinsuke Tanaka
    • H01S5/343
    • H01S5/1082H01S5/1014H01S5/1085H01S5/32366H01S5/50H01S5/5009H01S2301/02
    • A polarization-independent SOA is provided which uses an InP substrate (11) as a semiconductor substrate and uses GaInNAs having introduced tensile strain as an active layer (14). With this configuration, the polarization independence is achieved by introducing the tensile strain, and high saturation optical output power is realized by reducing the film thickness of the active layer (14) as well as the gain peak wavelength is increased by reducing the band gap of the active layer (14) through use of GaInNAs made by adding nitrogen (N) to GaInAs as a material of the active layer (14) so as to achieve high gain especially in C-band and L-band even when band filling exits at the time of injecting a high current into the active layer (14).
    • 提供了使用InP衬底(11)作为半导体衬底并且使用具有引入的拉伸应变的GaInNA作为有源层(14)的偏振无关的SOA。 通过这种结构,通过引入拉伸应变来实现极化独立性,并且通过降低有源层(14)的膜厚度来实现高饱和光输出功率,并且通过降低有源层(14)的带隙来增加增益峰值波长 通过使用通过将氮(N)添加到GaInAs作为有源层(14)的材料而制成的GaInNA,以便即使在带填充离开时也实现高增益,特别是在C带和L带中,有源层(14) 将高电流注入有源层(14)的时间。