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1. 发明授权

US06350685B1 Method for manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06350685B1
公开(公告)日：2002-02-26
申请号：US09412200
申请日：1999-10-05
申请人： Michio Asahina , Eiji Suzuki , Kazuki Matsumoto , Naohiro Moriya
发明人： Michio Asahina , Eiji Suzuki , Kazuki Matsumoto , Naohiro Moriya
IPC分类号： H01L2144
CPC分类号： H01L21/76846 , H01L21/76843 , H01L21/76856 , H01L21/76864 , H01L21/76888
摘要： A semiconductor device is manufactured by a method including the steps of forming a through hole in an interlayer dielectric layer (silicon oxide layer, BPSG layer, etc.) formed on a semiconductor substrate having a device element. A barrier layer is formed on surfaces of the interlayer dielectric layer and the through hole. A wiring layer is formed on the barrier layer. The barrier layer is formed by a method including the following steps. A titanium layer that forms at least a part of the barrier layer is formed. A heat treatment is conducted in a nitrogen atmosphere to form a titanium nitride layer at least on a surface of the titanium layer. The titanium nitride layer is contacted with oxygen in an atmosphere including oxygen. A heat treatment is conducted in a nitrogen atmosphere to form titanium oxide layers and to densify the titanium nitride layer.
摘要翻译：通过包括在形成有具有器件元件的半导体衬底上的层间电介质层（氧化硅层，BPSG层等）中形成通孔的方法制造半导体器件。在层间电介质层和通孔的表面上形成阻挡层。在阻挡层上形成布线层。通过包括以下步骤的方法形成阻挡层。形成形成阻挡层的至少一部分的钛层。在氮气气氛中进行热处理，至少在钛层的表面上形成氮化钛层。氮化钛层在包含氧的气氛中与氧接触。在氮气气氛中进行热处理以形成氧化钛层并致密化氮化钛层。

2. 发明授权

US06194304B1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06194304B1
公开(公告)日：2001-02-27
申请号：US09300378
申请日：1999-04-27
申请人： Yukio Morozumi , Michio Asahina , Naohiro Moriya , Kazuki Matsumoto , Eiji Suzuki
发明人： Yukio Morozumi , Michio Asahina , Naohiro Moriya , Kazuki Matsumoto , Eiji Suzuki
IPC分类号： H01L2144
CPC分类号： H01L21/76828 , H01L21/02129 , H01L21/02164 , H01L21/022 , H01L21/02203 , H01L21/02271 , H01L21/02274 , H01L21/31051 , H01L21/31625 , H01L21/76801 , H01L21/76804 , H01L21/76814 , H01L21/76819 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76843 , H01L21/76856 , H01L21/76864 , H01L21/76877 , H01L23/485 , H01L23/53223 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A process of forming an interlayer dielectric on a semiconductor substrate including an electronic element comprises at least the following steps (a) to (c): (a) a step of forming a first silicon oxide layer by reacting a silicon compound including hydrogen with hydrogen peroxide using a chemical vapor deposition method; (b) a step of forming a porous second silicon oxide layer by reacting between a compound including an impurity, silicon compounds, and at least one substance selected from oxygen and compounds including oxygen using a chemical vapor deposition method; and (c) a step of annealing at a temperature of 300° C. to 850° C. to make the first and second silicon oxide layers more fine-grained. The first silicon oxide layer is formed at a temperature that is lower than that required for a BPSG film, and it has superior self-flattening characteristics in itself.
摘要翻译：在包括电子元件的半导体衬底上形成层间电介质的工艺至少包括以下步骤（a）至（c）：（a）通过使包含氢的硅化合物与氢反应形成第一氧化硅层的步骤使用化学气相沉积方法的过氧化物;（b）通过使用化学气相沉积法在包括杂质，硅化合物和至少一种选自氧的化合物和包括氧的化合物中的化合物之间反应形成多孔的第二氧化硅层的步骤方法; 和（c）在300℃至850℃的温度下退火的步骤，以使第一和第二氧化硅层更细粒化。第一氧化硅层形成在低于该温度的温度 BPSG膜所需的，它本身具有优异的自扁平特性。

3. 发明授权

US6137176A Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US6137176A
公开(公告)日：2000-10-24
申请号：US104403
申请日：1998-06-25
申请人： Yukio Morozumi , Michio Asahina , Naohiro Moriya , Kazuki Matsumoto , Eiji Suzuki
发明人： Yukio Morozumi , Michio Asahina , Naohiro Moriya , Kazuki Matsumoto , Eiji Suzuki
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/768 , H01L23/485 , H01L23/522 , H01L23/532 , H01L29/78 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76828 , H01L21/02129 , H01L21/02164 , H01L21/022 , H01L21/02203 , H01L21/02271 , H01L21/02274 , H01L21/31051 , H01L21/31625 , H01L21/76801 , H01L21/76804 , H01L21/76814 , H01L21/76819 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76843 , H01L21/76856 , H01L21/76864 , H01L21/76877 , H01L23/485 , H01L23/53223 , H01L23/5329 , H01L2924/0002
摘要： A process of forming an interlayer dielectric on a semiconductor substrate including an electronic element includes:forming first silicon oxide layer by reacting a silicon compound including hydrogen with hydrogen peroxide using a chemical vapor deposition method;forming a porous second silicon oxide layer by reacting between a compound including an impurity, silicon compounds, and at least one substance selected from oxygen and compounds including oxygen using a chemical vapor deposition method; andannealing at a temperature of 300.degree. C. to 850.degree. C. to make the first and second silicon oxide layers more fine-grained. The first silicon oxide layer is formed at a temperature that is lower than that required of a BPSG film, and it has superior self-flattening characteristics in itself.
摘要翻译：在包括电子元件的半导体衬底上形成层间电介质的工艺包括：通过化学气相沉积法使包括氢的硅化合物与过氧化氢反应形成第一氧化硅层; 通过使用化学气相沉积法在包括杂质，硅化合物和至少一种选自氧的化合物和包括氧的化合物中的化合物之间反应形成多孔的第二氧化硅层; 并在300℃至850℃的温度下进行退火，以使第一和第二氧化硅层更细粒度。第一氧化硅层形成在低于BPSG膜所要求的温度下，其本身具有优异的自扁平化特性。

4. 发明授权

US06511910B2 Method for manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06511910B2
公开(公告)日：2003-01-28
申请号：US10162361
申请日：2002-06-03
申请人： Michio Asahina , Eiji Suzuki , Kazuki Matsumoto , Naohiro Moriya
发明人： Michio Asahina , Eiji Suzuki , Kazuki Matsumoto , Naohiro Moriya
IPC分类号： H01L214763
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/76801 , H01L21/76819 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/76864 , H01L21/76868 , H01L21/76886 , H01L23/485 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate having a device element, an interlayer dielectric layer (silicon oxide layer, BPSG layer) formed on the semiconductor substrate, a through hole defined in the interlaver dielectric layer, a barrier layer formed on surfaces of the interlayer dielectric layer and the through hole, and a wiring layer formed on the barrier layer. The barrier layer includes a first metal oxide layer formed from an oxide of a metal that forms the barrier layer (e.g., a first titanium oxide layer), a metal nitride layer formed from a nitride of the metal that forms the barrier layer (e.g., a titanium nitride layer), and a second metal oxide layer formed from an oxide of the metal that forms the barrier layer (e.g., a second titanium oxide layer). The semiconductor device thus manufactured has a barrier layer of an excellent barrier capability.
摘要翻译：半导体器件包括具有器件元件的半导体衬底，形成在半导体衬底上的层间介电层（氧化硅层，BPSG层），在隔板电介质层中限定的通孔，形成在层间电介质的表面上的阻挡层层和通孔，以及形成在阻挡层上的布线层。阻挡层包括由形成阻挡层（例如，第一氧化钛层）的金属的氧化物形成的第一金属氧化物层，由形成阻挡层的金属的氮化物形成的金属氮化物层（例如，氮化钛层）和由形成阻挡层的金属的氧化物形成的第二金属氧化物层（例如，第二氧化钛层）。由此制造的半导体器件具有优异的阻挡能力的阻挡层。

5. 发明授权

US06458703B2 Method for manufacturing semiconductor devices with allevration of thermal stress generation in conductive coating 失效
标题翻译：用于制造导电涂层中产生热应力的半导体器件的方法
公开(公告)号：US06458703B2
公开(公告)日：2002-10-01
申请号：US09389515
申请日：1999-09-03
申请人： Mamoru Endo , Junichi Takeuchi , Michio Asahina , Eiji Suzuki , Kazuki Matsumoto
发明人： Mamoru Endo , Junichi Takeuchi , Michio Asahina , Eiji Suzuki , Kazuki Matsumoto
IPC分类号： H01L2144
CPC分类号： H01L21/76856 , H01L21/28518 , H01L21/76828 , H01L21/76843 , H01L21/76877
摘要： A method for manufacturing a semiconductor device that fills contact holes with conductive material such as aluminum or an aluminum alloy. A semiconductor device is manufactured by the process of forming an opening such as a contact hole in an interlayer dielectric film formed on a semiconductor substrate having a device element formed thereon. A first film and a second film made of conductive material such as aluminum or an alloy containing aluminum are formed on the interlayer dielectric film and the opening. The second film is then gradually cooled.
摘要翻译：一种半导体器件的制造方法，其用诸如铝或铝合金的导电材料填充接触孔。通过在其上形成有器件元件的半导体衬底上形成的层间电介质膜中形成诸如接触孔的开口的方法来制造半导体器件。在层间电介质膜和开口上形成由铝或含有铝的合金的导电材料制成的第一膜和第二膜。然后第二个膜逐渐冷却。

6. 发明授权

US06429493B1 Semiconductor device and method for manufacturing semiconductor device 失效
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US06429493B1
公开(公告)日：2002-08-06
申请号：US09420025
申请日：1999-10-18
申请人： Michio Asahina , Eiji Suzuki , Kazuki Matsumoto , Naohiro Moriya
发明人： Michio Asahina , Eiji Suzuki , Kazuki Matsumoto , Naohiro Moriya
IPC分类号： H01L2348
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/76801 , H01L21/76819 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/76864 , H01L21/76868 , H01L21/76886 , H01L23/485 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate having a device element, an interlayer dielectric layer (silicon oxide layer, BPSG layer) formed on the semiconductor substrate, a through hole defined in the interlayer dielectric layer, a barrier layer formed on surfaces of the interlayer dielectric layer and the through hole, and a wiring layer formed on the barrier layer. The barrier layer includes a first metal oxide layer formed from an oxide of a metal that forms the barrier layer (e.g., a first titanium oxide layer), a metal nitride layer formed from a nitride of the metal that forms the barrier layer (e.g., a titanium nitride layer), and a second metal oxide layer formed from an oxide of the metal that forms the barrier layer (e.g., a second titanium oxide layer). The semiconductor device thus manufactured has a barrier layer of an excellent barrier capability.
摘要翻译：半导体器件包括具有器件元件的半导体衬底，形成在半导体衬底上的层间绝缘层（氧化硅层，BPSG层），层间绝缘层中限定的通孔，形成在层间电介质的表面上的阻挡层层和通孔，以及形成在阻挡层上的布线层。阻挡层包括由形成阻挡层（例如，第一氧化钛层）的金属的氧化物形成的第一金属氧化物层，由形成阻挡层的金属的氮化物形成的金属氮化物层（例如，氮化钛层）和由形成阻挡层的金属的氧化物形成的第二金属氧化物层（例如，第二氧化钛层）。由此制造的半导体器件具有优异的阻挡能力的阻挡层。

7. 发明授权

US06326287B1 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06326287B1
公开(公告)日：2001-12-04
申请号：US09384210
申请日：1999-08-27
申请人： Michio Asahina , Kazuki Matsumoto , Eiji Suzuki
发明人： Michio Asahina , Kazuki Matsumoto , Eiji Suzuki
IPC分类号： H01L2120
CPC分类号： H01L21/76856 , H01L21/28518 , H01L21/2855 , H01L21/31612 , H01L21/31625 , H01L21/32051 , H01L21/76801 , H01L21/76802 , H01L21/76828 , H01L21/76843 , H01L21/76846 , H01L21/76877 , H01L23/485 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprising a semiconductor substrate including an electronic element such as a MOSFET, interlayer dielectric (silicon oxide layer or BPSG layer) formed on the semiconductor substrate, a through-hole formed in the interlayer dielectric, a barrier layer formed on a surface of the interlayer dielectric and on a surface of the through-hole, and a metal wiring layer formed on the barrier layer. The metal wiring layer contains aluminum as its major component and 0.1 wt % to 3 wt % of beryllium. An aluminum alloy can be embedded in the through-hole without creation of any void or breaking of wire, and the semiconductor device is highly resistant to electro-migration.
摘要翻译：一种半导体器件，包括：半导体衬底，其包括形成在所述半导体衬底上的诸如MOSFET的电子元件，层间电介质（氧化硅层或BPSG层），形成在所述层间电介质中的通孔，形成在所述半导体衬底的表面上的阻挡层所述层间电介质和所述通孔的表面，以及形成在所述阻挡层上的金属布线层。金属配线层含有铝作为主要成分，0.1重量％〜3重量％的铍。铝合金可嵌入通孔中而不产生任何空隙或断线，半导体器件具有很高的抗电迁移能力。

8. 发明授权

US09312073B2 Nonaqueous electrolyte solution, and lithium ion secondary battery having the same 有权
标题翻译：非水电解液和具有该非水电解质溶液的锂离子二次电池
公开(公告)号：US09312073B2
公开(公告)日：2016-04-12
申请号：US13578209
申请日：2011-02-10
申请人： Shinako Kaneko , Hitoshi Ishikawa , Yoko Hashizume , Eiji Suzuki
发明人： Shinako Kaneko , Hitoshi Ishikawa , Yoko Hashizume , Eiji Suzuki
IPC分类号： H01M10/056 , H01G9/022 , H01G11/60 , H01M10/052 , H01M10/0567 , H01M10/0568 , H01M10/0569 , H01M10/42 , H01M10/0565
CPC分类号： H01G9/035 , H01G9/038 , H01G9/145 , H01G11/60 , H01M10/052 , H01M10/0525 , H01M10/0565 , H01M10/0567 , H01M10/0568 , H01M10/0569 , H01M10/4235 , H01M2300/0025 , Y02E60/122 , Y02E60/13
摘要： The exemplary embodiment has an object to provide a nonaqueous electrolyte solution having a flame retardancy over a long period and having a good capacity maintenance rate. The exemplary embodiment is a nonaqueous electrolyte solution containing a lithium salt, at least one oxo-acid ester derivative of phosphorus selected from compounds represented by a predetermined formula, and at least one disulfonate ester selected from a cyclic disulfonate ester and a linear disulfonate ester represented by the predetermined formulae.
摘要翻译：本实施方式的目的在于提供一种长时间具有阻燃性且具有良好的容量维持率的非水电解液。该示例性实施方案是含有锂盐，至少一种选自由预定式表示的化合物的磷的含氧酸酯衍生物和至少一种选自环状二磺酸酯和直链二磺酸酯的二磺酸酯的非水电解质溶液，通过预定公式。

9. 发明申请

US20120227769A1 METHOD FOR COLLECTING LIQUID SURFACE RESIDUAL FILM, METHOD FOR TRANSFERRING LIQUID PRESSURE USING SAME, COLLECTION DEVICE THEREFOR, AND LIQUID PRESSURE TRANSFER DEVICE USING SAME 有权
标题翻译：用于收集液体表面残留膜的方法，使用其传输液体压力的方法，其采集装置和使用其的液压传送装置
公开(公告)号：US20120227769A1
公开(公告)日：2012-09-13
申请号：US13502889
申请日：2010-10-27
申请人： Youichiro Yoshii , Eiji Suzuki , Sakae Ushiwata
发明人： Youichiro Yoshii , Eiji Suzuki , Sakae Ushiwata
IPC分类号： B08B5/00 , F17C13/00 , F17D1/00
CPC分类号： B44C1/175 , B41F16/006 , B44C1/1758 , Y10T137/0318 , Y10T137/85978
摘要： A method for collecting a liquid surface residual film floating on the surface of the liquid after transfer, and a transfer tank that includes a film holding mechanism, provided at inner sides of both right and left side walls, for holding both sides of the transfer film and conveying the transfer film to an immersion area. When a film that is no longer needed after the transfer is collected, dividing means divides the liquid surface residual film so as to split the liquid surface residual film in a longitudinal direction of the transfer tank before the object is removed from the transfer liquid, and the divided films are moved closer to the both side walls of the transfer tank. At the side wall portions, the film holding mechanism is canceled, and from this canceled portion, the divided liquid surface residual films are discharged out of the tank.
摘要翻译：一种用于收集在转印后液面漂浮的液面残留膜的方法，以及设置在两侧壁和左侧壁的内侧的用于保持转印膜两侧的胶片保持机构的转印箱并将转印膜输送到浸没区域。当收集转印后不再需要的胶片时，分割装置在物体从转印液体上除去之前，将液面残留膜分割成使液面残留膜在转印罐的长度方向上分离，分离的膜移动得更接近转印罐的两个侧壁。在侧壁部分，胶片保持机构被取消，并且从该取消部分中分离的液面残留膜从罐中排出。

10. 发明申请

US20120037145A1 STEAM GENERATOR 有权
标题翻译：蒸汽发生器
公开(公告)号：US20120037145A1
公开(公告)日：2012-02-16
申请号：US13125861
申请日：2009-10-23
申请人： Kazuhiko Inoue , Eiji Suzuki , Shinichi Kaga , Yukimasa Takeda , Akihiko Hirano , Hiroshi Kai , Masao Sanuki , Motohiko Mouri , Yoshitaka Uchihori
发明人： Kazuhiko Inoue , Eiji Suzuki , Shinichi Kaga , Yukimasa Takeda , Akihiko Hirano , Hiroshi Kai , Masao Sanuki , Motohiko Mouri , Yoshitaka Uchihori
IPC分类号： A47J27/04 , F22B1/28
CPC分类号： H05B6/108 , B24B49/105 , F01K17/02 , F22B1/281 , F22B37/26
摘要： The subject of the present invention is to provide a steam generator constructed small in size. A steam generator 20 of the present invention is composed of a cylindrical steam generation vessel 30 having a steam generation portion 31 formed to store an amount of water for generating steam and a steam passage 32 formed on the upper end of the steam generation portion for spouting steam generated in the steam generation portion, a heater element 40 disposed within the steam generation vessel 30, and an induction heating coil wound around the periphery of the steam generation vessel 30 for energizing the heater element. The heater element 40 is energized by supply of electric power to the heating coil so that steam generated by boiling of the water in the steam generation portion spouts upward from the steam passage. In the steam generator 20, a steam discharge duct 70 is mounted on the upper end of the steam passage 32 for receiving the steam spouting upward from the steam passage to discharge it in a lateral direction such that drops of hot water adhered to a ceiling surface of the discharge duct fall and circulate into the steam generation part 31.
摘要翻译：本发明的主题是提供一种尺寸小的蒸汽发生器。本发明的蒸汽发生器20由圆筒形蒸汽发生容器30构成，该圆筒形蒸汽发生容器30具有形成用于储存一定量的用于产生蒸汽的水分的蒸汽发生部分31和形成在蒸汽发生部分上端的蒸汽通道32，用于喷射在蒸汽产生部分产生的蒸汽，设置在蒸汽发生容器30内的加热器元件40，以及卷绕在蒸汽发生容器30周围的感应加热线圈，用于激励加热器元件。加热器元件40通过向加热线圈供应电力而被激励，使得由蒸汽产生部分中的水沸腾产生的蒸汽从蒸汽通道向上喷出。在蒸汽发生器20中，蒸汽排出管道70安装在蒸汽通道32的上端，用于接收从蒸汽通道向上喷出的蒸汽，以沿横向方向排出蒸汽，使得水滴附着在天花板表面上的排出管道落下并循环到蒸汽发生部31中。

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