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    • 9. 发明申请
    • Fabrication method for crystalline semiconductor films on foreign substrates
    • 国外基板上晶体半导体膜的制造方法
    • US20060252235A1
    • 2006-11-09
    • US10530848
    • 2003-10-07
    • Armin AberlePer Ingemar WidenborgAxel StraubDirk-Holger NeuhausOliver HartleyNils-Peter Harder
    • Armin AberlePer Ingemar WidenborgAxel StraubDirk-Holger NeuhausOliver HartleyNils-Peter Harder
    • H01L21/20H01L21/36
    • H01L21/2022H01L31/182Y02E10/546Y02P70/521
    • The invention provides a method of forming a polycrystalline semiconductor film on a supporting substrate of foreign material. The method involves depositing a metal film onto the substrate, forming a film of metal oxide and/or hydroxide on a substrate of the metal, and forming a layer of an amorphous semiconductor material over a surface of the metal oxide and/or hydroxide film. The entire sample is then heated to a temperature at which the semiconductor layer is absorbed into the metal layer and deposited as a polycrystalline layer onto the target surface by metal-induced crystallization. The metal is left as an overlayer covering the deposited polycrystalline layer, with semiconductor inclusions in the metal layer. The polycrystalline semiconductor film and the overlayer are generated by porous interfacial metal oxide nd/or hydroxide film. The metal in the overlayer and the interfacial metal oxide and/or hydroxide film are then removed with an etch which underetches the semiconductor inclusions to form freestanding islands. Finally, the freestanding semiconductor “islands” are removed from the surface of the polycrystalline semiconductor layer by a lift-off process.
    • 本发明提供了在异物的支撑基板上形成多晶半导体膜的方法。 该方法包括在衬底上沉积金属膜,在金属的衬底上形成金属氧化物和/或氢氧化物的膜,并在金属氧化物和/或氢氧化物膜的表面上形成非晶半导体材料层。 然后将整个样品加热到半导体层被吸收到金属层中并通过金属诱导结晶作为多晶层沉积到靶表面上的温度。 留下金属作为覆盖沉积的多晶层的覆盖层,在金属层中具有半导体夹杂物。 多晶半导体膜和覆盖层由多孔界面金属氧化物nd /或氢氧化物膜产生。 然后用蚀刻去除覆盖层中的金属和界面金属氧化物和/或氢氧化物膜,该蚀刻不影响半导体夹杂物以形成独立的岛。 最后,通过剥离工艺从多晶半导体层的表面去除独立的半导体“岛”。