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1. 发明授权

US5400354A Laminated upper cladding structure for a light-emitting device 失效
标题翻译：用于发光器件的层压上包层结构
公开(公告)号：US5400354A
公开(公告)日：1995-03-21
申请号：US193681
申请日：1994-02-08
申请人： Michael Ludowise , Nick Holonyak, Jr. , Stephen J. Caracci , Michael R. Krames , Fred A. Kish
发明人： Michael Ludowise , Nick Holonyak, Jr. , Stephen J. Caracci , Michael R. Krames , Fred A. Kish
IPC分类号： H01L21/338 , H01L21/74 , H01L21/8252 , H01L29/10 , H01L29/51 , H01L33/30 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19
CPC分类号： H01L29/513 , H01L21/746 , H01L21/8252 , H01L29/1054 , H01L29/517 , H01L29/66863 , H01L33/30 , H01S5/20 , H01S5/22 , H01S5/2231 , H01S5/2059 , H01S5/2205 , H01S5/2214 , H01S5/32391
摘要： A fabrication method for providing a semiconductor light-emitting device includes growing a plurality of layers on a semiconductor substrate, including forming a lower cladding layer and an active region for generating lightwaves. A laminated cladding structure is formed on the active region. The laminated cladding structure includes a lower layer that is substantially aluminum-free to inhibit oxidation and includes an upper layer that is aluminum-bearing in order to promote oxidation. The upper layer of the lamination is oxidized along selected first regions and is selectively masked to prevent oxidation for second regions. The oxidation of the first region is carried out under conditions such that a native oxide is formed throughout the thickness of the first regions. Electrical current to the active region for operating the light-emitting device is channeled via the unoxidized region of the upper layer of the lamination. In a preferred embodiment, the device is an InGaAsP-AlInAs-InP laser. Other electronic devices, such as FETs, can be also formed using the top-down approach. Preferably, oxidation is limited to an upper III-V semiconductor layer by forming a lower III-V semiconductor layer that includes In and/or P. Lateral oxidation can also be realized using this approach.
摘要翻译：一种用于提供半导体发光器件的制造方法包括在半导体衬底上生长多个层，包括形成下覆盖层和用于产生光波的有源区。在有源区上形成层叠包层结构。层压包覆结构包括基本上不含铝的下层以抑制氧化，并且包括为了促进氧化而成为铝的上层。叠层的上层被沿选定的第一区氧化，并被选择性地掩蔽以防止第二区的氧化。第一区域的氧化在使得在第一区域的整个厚度上形成天然氧化物的条件下进行。通过层压的上层的未氧化区域引导到用于操作发光器件的有源区的电流。在优选实施例中，器件是InGaAsP-AlInAs-InP激光器。也可以使用自顶向下的方法形成诸如FET的其它电子器件。优选地，通过形成包括In和/或P的下III-V半导体层，氧化被限制在上III-V半导体层。也可以使用这种方法实现侧向氧化。

2. 发明授权

US06280523B1 Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting 有权
标题翻译：通过激光熔化对晶片接合AlxGayInzN结构进行厚度裁剪
公开(公告)号：US06280523B1
公开(公告)日：2001-08-28
申请号：US09245448
申请日：1999-02-05
申请人： Carrie Carter Coman , Fred A. Kish, Jr. , R. Scott Kern , Michael R. Krames , Paul S. Martin
发明人： Carrie Carter Coman , Fred A. Kish, Jr. , R. Scott Kern , Michael R. Krames , Paul S. Martin
IPC分类号： C30B2512
CPC分类号： H01L33/465 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/105 , H01S5/0216 , H01S5/0217 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/32341 , Y10S117/915
摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
摘要翻译：具有垂直光路的发光器件，例如可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。电触点被添加到发光器件中。

3. 发明授权

US07087941B2 lll-phosphide light emitting devices with thin active layers 有权
标题翻译：具有薄活性层的磷化铟发光器件
公开(公告)号：US07087941B2
公开(公告)日：2006-08-08
申请号：US10011521
申请日：2001-11-05
申请人： Nathan F. Gardner , Fred A. Kish , Herman C. Chui , Stephen A. Stockman , Michael R. Krames , Gloria E. Hofler , Christopher Kocot , Nicolas J. Moll , Tun-Sein Tan
发明人： Nathan F. Gardner , Fred A. Kish , Herman C. Chui , Stephen A. Stockman , Michael R. Krames , Gloria E. Hofler , Christopher Kocot , Nicolas J. Moll , Tun-Sein Tan
IPC分类号： H01L31/72
CPC分类号： H01L33/30 , H01L33/02 , H01L33/305
摘要： The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.
摘要翻译：通过使吸收装置层尽可能薄，可以提高发光装置的提取效率。内部量子效率随着器件层变薄而减小。最佳活性层厚度平衡两种效果。 AlGaInP LED包括基板和包括第一导电类型的AlGaInP下约束层，第二导电类型的AlGaInP有源区和第二导电类型的AlGaInP上约束层的器件层。有源区的吸光度是发光器件中总吸光度的至少五分之一。该装置可选地包括至少一个插入限制层和活性区域中的一个AlGaInP的后置层。可以用氧掺杂p型上约束层提高可靠性。

4. 发明授权

US06784463B2 III-Phospide and III-Arsenide flip chip light-emitting devices 有权
标题翻译： III型磷化物和III型砷化物倒装芯片发光器件
公开(公告)号：US06784463B2
公开(公告)日：2004-08-31
申请号：US10095552
申请日：2002-03-11
申请人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
发明人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
IPC分类号： H01L3300
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/14 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/05611 , H01L2924/00014 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684
摘要： A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.
摘要翻译：发光半导体器件包括包括有源区的层叠层。有源区包括选自III-磷化物，III-砷化物及其合金的半导体。对于由有源区域发射的光基本透明的覆盖层设置在堆叠的第一侧上。电耦合以在有源区域施加电压的第一和第二电触点设置在与第一侧相对的堆叠的第二侧上。在一些实施例中，由有源区域发射的较大部分的光通过第一侧离开堆叠而不是通过第二侧。因此，例如，发光半导体器件可以有利地作为倒装芯片安装到基座。

5. 发明授权

US5779924A Ordered interface texturing for a light emitting device 失效
标题翻译：用于发光器件的有序接口纹理
公开(公告)号：US5779924A
公开(公告)日：1998-07-14
申请号：US620518
申请日：1996-03-22
申请人： Michael R. Krames , Fred A. Kish, Jr.
发明人： Michael R. Krames , Fred A. Kish, Jr.
IPC分类号： H01L33/20 , H01L33/22 , B44C1/22
CPC分类号： H01L33/20 , H01L33/22 , H01L33/38
摘要： This method relates to the fabrication of semiconductor light-emitting devices having at least one ordered textured interface. Controlled interface texturing with an ordered pattern is provided on any or all interfaces of such a device to enhance light extraction from these interfaces and thus improve the performance of the device. Ordered interface texturing offers an improvement in light extraction by increasing the transmission of total optical power from the device into the ambient. This improvement is possible because ordered interface texturing can provide: 1) a reduction in Fresnel losses at the interface between the device and the ambient and, 2) a change or increase in the angular bandwidth of light which may transmit power into the ambient. This latter effect may be thought of a change or increase in the escape cone at an interface. Both effects can result in an overall increase in total light extraction efficiency for the LED.
摘要翻译：该方法涉及具有至少一个有序纹理界面的半导体发光器件的制造。在这种设备的任何或所有接口上提供具有有序模式的受控接口纹理，以增强从这些接口的光提取，从而提高设备的性能。有序的界面纹理通过增加从设备到环境中的总光功率的传输来提供光提取的改进。这种改进是可能的，因为有序的界面纹理可以提供：1）在设备和环境之间的接口处减少菲涅尔损耗，以及2）可以将功率传输到环境中的光的角度带宽的改变或增加。后一种效应可以被认为在界面处的逃避锥的变化或增加。这两种效应可以导致LED的总光提取效率的总体增加。

6. 发明授权

US06946309B2 III-Phosphide and III-Arsenide flip chip light-emitting devices 有权
标题翻译： III型磷化物和III型砷化物倒装芯片发光器件
公开(公告)号：US06946309B2
公开(公告)日：2005-09-20
申请号：US10867936
申请日：2004-06-14
申请人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
发明人： Michael D. Camras , Daniel A. Steigerwald , Frank M. Steranka , Michael J. Ludowise , Paul S. Martin , Michael R. Krames , Fred A. Kish , Stephen A. Stockman
IPC分类号： H01L33/02 , H01L33/08 , H01L33/14 , H01L33/20 , H01L21/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/14 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/05611 , H01L2924/00014 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684
摘要： A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.
摘要翻译：发光半导体器件包括包括有源区的层叠层。有源区包括选自III-磷化物，III-砷化物及其合金的半导体。对于由有源区域发射的光基本透明的覆盖层设置在堆叠的第一侧上。电耦合以在有源区域施加电压的第一和第二电触点设置在与第一侧相对的堆叠的第二侧上。在一些实施例中，由有源区域发射的较大部分的光通过第一侧离开堆叠而不是通过第二侧。因此，例如，发光半导体器件可以有利地作为倒装芯片安装到基座。

7. 发明授权

US09911896B2 Semiconductor light emitting device growing active layer on textured surface 有权
公开(公告)号：US09911896B2
公开(公告)日：2018-03-06
申请号：US12830885
申请日：2010-07-06
申请人： Sungsoo Yi , Nathan F. Gardner , Michael R. Krames , Linda T. Romano
发明人： Sungsoo Yi , Nathan F. Gardner , Michael R. Krames , Linda T. Romano
IPC分类号： H01L33/02 , H01L33/00 , H01L33/08 , H01L33/12 , H01L33/22
CPC分类号： H01L33/007 , H01L33/08 , H01L33/12 , H01L33/22
摘要： In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.

8. 发明授权

US08884517B1 Illumination sources with thermally-isolated electronics 有权
标题翻译：带隔离电子元件的照明源
公开(公告)号：US08884517B1
公开(公告)日：2014-11-11
申请号：US13274489
申请日：2011-10-17
申请人： Frank Tin Chung Shum , Frank M. Steranka , Michael R. Krames
发明人： Frank Tin Chung Shum , Frank M. Steranka , Michael R. Krames
IPC分类号： H01K1/62 , H01J9/24
CPC分类号： F21V29/15 , F21K9/23 , F21K9/90 , F21V29/70 , F21V29/74 , F21V29/83 , F21Y2105/10 , F21Y2115/10
摘要： An lighting source includes a driver for outputting electrical power in response to external electrical power, wherein the driver generates heat in response thereto, a lamp coupled to the driver, for outputting light in response to the electrical power, wherein the lamp generates heat in response thereto, a first heat sink physically coupled to the driver for receiving and dissipating heat there from, a second heat sink physically coupled to the light for receiving heat and dissipating heat there from, and an insulating portion disposed between the first heat sink and the second heat sink, wherein the insulating portion is configured to inhibit heat from the lamp from being transferred to the driver.
摘要翻译：照明源包括用于响应于外部电力输出电力的驱动器，其中驱动器响应于此而产生热量，连接到驱动器的灯，用于响应于电功率而输出光，其中灯发出响应的热量物理耦合到驱动器的第一散热器，用于从其接收和散发热量，物理耦合到光的第二散热器，用于接收热量并从中散发热量;以及绝缘部分，设置在第一散热器和第二散热器之间散热器，其中所述绝缘部分被配置为抑制来自所述灯的热量被传送到所述驱动器。

9. 发明授权

US08445929B2 Wavelength-converted semiconductor light emitting device 有权
标题翻译：波长转换半导体发光器件
公开(公告)号：US08445929B2
公开(公告)日：2013-05-21
申请号：US12723720
申请日：2010-03-15
申请人： Michael R. Krames , Gerd O. Mueller
发明人： Michael R. Krames , Gerd O. Mueller
IPC分类号： H01L33/00
CPC分类号： H01L33/501 , B82Y30/00 , C04B35/44 , C04B35/495 , C04B35/6268 , C04B35/62805 , C04B35/62807 , C04B35/62813 , C04B35/645 , C04B37/001 , C04B37/005 , C04B37/006 , C04B37/008 , C04B37/026 , C04B2235/3217 , C04B2235/3225 , C04B2235/3229 , C04B2235/5454 , C04B2237/02 , C04B2237/06 , C04B2237/064 , C04B2237/068 , C04B2237/08 , C04B2237/083 , C04B2237/10 , C04B2237/12 , C04B2237/30 , C04B2237/34 , C04B2237/343 , C04B2237/36 , C04B2237/365 , C04B2237/366 , C04B2237/368 , C04B2237/52 , C04B2237/525 , C04B2237/704 , C04B2237/708 , C04B2237/76 , H01L33/0079 , H01L33/08 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/14 , H01L2924/00014 , H01L2924/0002 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Embodiments of the invention include a light emitting structure comprising a light emitting layer. A first luminescent material comprising a phosphor is disposed in a path of light emitted by the light emitting layer. A second luminescent material comprising a semiconductor is also disposed in a path of light emitted by the light emitting layer. The second luminescent material is configured to absorb light emitted by the light emitting layer and emit light of a different wavelength. In some embodiments, one of the first and second luminescent materials may be bonded to the semiconductor structure.
摘要翻译：本发明的实施例包括包括发光层的发光结构。包含磷光体的第一发光材料设置在由发光层发射的光的路径中。包括半导体的第二发光材料也设置在由发光层发射的光的路径中。第二发光材料被配置为吸收由发光层发射的光并发射不同波长的光。在一些实施例中，第一和第二发光材料之一可以结合到半导体结构。

10. 发明授权

US08288186B2 Substrate for growing a III-V light emitting device 有权
公开(公告)号：US08288186B2
公开(公告)日：2012-10-16
申请号：US12887853
申请日：2010-09-22
申请人： Michael R. Krames , Nathan F. Gardner , John E. Epler
发明人： Michael R. Krames , Nathan F. Gardner , John E. Epler
IPC分类号： H01L21/20 , H01L21/301
CPC分类号： H01L21/76256 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/76254 , H01L33/007 , H01L33/0079
摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

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