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1. 发明授权

US5231074A Preparation of highly textured oxide superconducting films from MOD precursor solutions 失效
标题翻译：从MOD前置解决方案制备高纹理氧化物超导膜
公开(公告)号：US5231074A
公开(公告)日：1993-07-27
申请号：US510115
申请日：1990-04-17
申请人： Michael J. Cima , Paul McIntyre
发明人： Michael J. Cima , Paul McIntyre
IPC分类号： H01L39/24
CPC分类号： H01L39/2451 , Y10S505/734
摘要： Highly-textured superconductor oxide thin films are prepared on substrates, including lattice matched, non-lattice matThe Government has rights in this invention pursuant to contract Number MDA972-88-K0006 awarded by the U.S. Defense Advance Research Project Agency.
摘要翻译：通过金属有机沉积（MOD）在衬底上制备高纹理超导体氧化物薄膜，包括晶格匹配的，非晶格匹配的惰性和非惰性材料。选择前体溶液组成以及加工温度和气氛以控制瞬态液相的存在。以高度纹理化的形态和完全致密均匀的微观结构为特征的超导体氧化物膜在77°K时能够保持超过104A / cm 2的临界电流密度，当在非晶格匹配衬底上制备时，其临界电流密度超过106A / cm2，当在晶格匹配的基底上制备时。

2. 发明申请

US20080078985A1 ELECTROCHEMICAL MEMORY WITH INTERNAL BOUNDARY 有权
标题翻译：具有内部边界的电化学记忆
公开(公告)号：US20080078985A1
公开(公告)日：2008-04-03
申请号：US11864426
申请日：2007-09-28
申请人： Rene Meyer , Paul McIntyre
发明人： Rene Meyer , Paul McIntyre
IPC分类号： H01L47/00
CPC分类号： G11C13/02 , G11C2213/11 , H01L45/08 , H01L45/12 , H01L45/142 , H01L45/146 , H01L45/147
摘要： Non-volatile resistance change memories, systems, arrangements and associated methods are implemented in a variety of embodiments. According to one embodiment, a memory cell having two sections with outwardly-facing portions, the outwardly-facing portions electrically coupled to electrodes is implemented. The memory cell has an ionic barrier between the two sections. The two sections and the ionic barrier facilitate movement of ions from one of the two sections to the other of the two sections in response to a first voltage differential across the outwardly-facing portions. The two sections and the ionic barrier diminish movement of ions from the one of the two sections to the other of the two sections in response to another voltage differential across the outwardly-facing portions.
摘要翻译：在各种实施例中实现非易失性电阻变化存储器，系统，布置和相关联的方法。根据一个实施例，实现了具有两个部分的存储单元，其具有朝外的部分，电耦合到电极的朝外的部分被实现。记忆单元在两个部分之间具有离子屏障。两个部分和离子屏障促使离子从两个部分中的一个移动到两个部分中的另一个部分，以响应跨越面向外部分的第一电压差。两个部分和离子屏障响应于穿过面向外部分的另一个电压差，使离子从两个部分中的一个部分移动到两个部分中的另一个部分。

3. 发明申请

US20070170541A1 HIGH-K DIELECTRIC FOR THERMODYNAMICALLY-STABLE SUBSTRATE-TYPE MATERIALS 有权
标题翻译：用于热稳定基板材料的高K电介质
公开(公告)号：US20070170541A1
公开(公告)日：2007-07-26
申请号：US10404876
申请日：2003-03-31
申请人： Chi Chui , Krishna Saraswat , Baylor Triplett , Paul McIntyre
发明人： Chi Chui , Krishna Saraswat , Baylor Triplett , Paul McIntyre
IPC分类号： H01L29/00
CPC分类号： H01L21/28255 , H01L29/513 , H01L29/517 , H01L29/785 , H01L29/78642 , H01L29/78684 , H01L29/78687
摘要： Excellent capacitor-voltage characteristics with near-ideal hysteresis are realized in a capacitive-like structure that uses an electrode substrate-type material with a high-k dielectric layer having a thickness of a few-to-several Angstroms capacitance-based SiO2 equivalent (“TOx,Eq”). According to one particular example embodiment, a semiconductor device structure has an electrode substrate-type material having a Germanium-rich surface material. The electrode substrate-type material is processed to provide this particular electrode surface material in a form that is thermodynamically stable with a high-k dielectric material. A dielectric layer is then formed over the electrode surface material with the high-k dielectric material at a surface that faces, lies against and is thermodynamically stable with the electrode surface material.
摘要翻译：具有接近理想滞后的良好的电容器电压特性在电容式结构中实现，其使用具有厚度为几至几埃电容的SiO 2等价物（“T Ox”，Eq ）。根据一个特定示例性实施例，半导体器件结构具有具有富锗表面材料的电极基底型材料。对电极基板型材料进行加工，以高k电介质材料的热力学稳定形式提供这种特定的电极表面材料。然后在电极表面材料上形成介电层，其中高k电介质材料在与电极表面材料相对的位置处于表面，并且与电极表面材料具有热力学稳定性。

4. 发明授权

US06911689B2 Versatile system for chromium based diffusion barriers in electrode structures 有权
标题翻译：电极结构中铬基扩散阻挡层的通用系统
公开(公告)号：US06911689B2
公开(公告)日：2005-06-28
申请号：US10247227
申请日：2002-09-19
申请人： Wei-Yung Hsu , Scott Summerfelt , Paul McIntyre
发明人： Wei-Yung Hsu , Scott Summerfelt , Paul McIntyre
IPC分类号： H01L21/02 , H01L21/285 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01L28/75 , H01L21/28568
摘要： A versatile system providing Cr-based diffusion barriers and electrode structures utilizing such barriers is disclosed, including a semiconductor substrate (102), a dielectric layer (106) disposed upon the substrate, a Cr-based conductive layer (114) disposed upon the dielectric layer, and an electrode layer (116) disposed upon the conductive layer.
摘要翻译：公开了一种提供基于Cr的扩散阻挡层和利用这种屏障的电极结构的通用系统，包括半导体衬底（102），设置在衬底上的电介质层（106），设置在电介质上的Cr基导电层层和布置在导电层上的电极层（116）。

5. 发明授权

US07271458B2 High-k dielectric for thermodynamically-stable substrate-type materials 有权
标题翻译：用于热力学稳定的衬底型材料的高k电介质
公开(公告)号：US07271458B2
公开(公告)日：2007-09-18
申请号：US10404876
申请日：2003-03-31
申请人： Chi On Chui , Krishna C. Saraswat , Baylor B. Triplett , Paul McIntyre
发明人： Chi On Chui , Krishna C. Saraswat , Baylor B. Triplett , Paul McIntyre
IPC分类号： H01L29/76
CPC分类号： H01L21/28255 , H01L29/513 , H01L29/517 , H01L29/785 , H01L29/78642 , H01L29/78684 , H01L29/78687
摘要： Excellent capacitor-voltage characteristics with near-ideal hysteresis are realized in a capacitive-like structure that uses an electrode substrate-type material with a high-k dielectric layer having a thickness of a few-to-several Angstroms capacitance-based SiO2 equivalent (“TOx, Eq”). According to one particular example embodiment, a semiconductor device structure has an electrode substrate-type material having a Germanium-rich surface material. The electrode substrate-type material is processed to provide this particular electrode surface material in a form that is thermodynamically stable with a high-k dielectric material. A dielectric layer is then formed over the electrode surface material with the high-k dielectric material at a surface that faces, lies against and is thermodynamically stable with the electrode surface material.
摘要翻译：具有接近理想滞后的良好的电容器电压特性在电容式结构中实现，其使用具有厚度为几至几埃电容的SiO 2等价物（“T Ox”，Eq ）。根据一个特定示例性实施例，半导体器件结构具有具有富锗表面材料的电极基底型材料。对电极基板型材料进行加工，以高k电介质材料的热力学稳定形式提供这种特定的电极表面材料。然后在电极表面材料上形成介电层，其中高k电介质材料在与电极表面材料相对的位置处于表面，并且与电极表面材料具有热力学稳定性。

6. 发明申请

US20070099398A1 Method and system for forming a nitrided germanium-containing layer using plasma processing 失效
标题翻译：使用等离子体处理形成氮化锗含量层的方法和系统
公开(公告)号：US20070099398A1
公开(公告)日：2007-05-03
申请号：US11263619
申请日：2005-10-31
申请人： Takuya Sugawara , Paul McIntyre
发明人： Takuya Sugawara , Paul McIntyre
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02247 , C23C8/36 , H01J37/3222 , H01J37/32972 , H01L21/02175 , H01L21/02252 , H01L21/02337 , H01L21/02343 , H01L21/28255 , H01L21/31111 , H01L21/318
摘要： A method and system for forming a nitrided germanium-containing layer by plasma processing. The method includes providing a germanium-containing substrate in a process chamber, generating a plasma from a process gas containing N2 and a noble gas, where the plasma conditions are selected effective to form plasma excited N2 species while controlling formation of plasma excited N species, and exposing the substrate to the plasma to form a nitrided germanium-containing layer on the substrate. A method is also provided that includes exposing a germanium-containing dielectric layer to liquid or gaseous H2O to alter the thickness and chemical composition of the layer.
摘要翻译：通过等离子体处理形成氮化锗含量层的方法和系统。该方法包括在处理室中提供含锗衬底，从含有N 2 O 3和惰性气体的工艺气体产生等离子体，其中选择有效的等离子体条件以形成等离子体激发的N _{2种物质，同时控制等离子体激发的N物质的形成，以及将衬底暴露于等离子体以在衬底上形成氮化的含锗层。还提供了一种方法，其包括将含锗介电层暴露于液态或气态H 2 O以改变该层的厚度和化学组成。}

7. 发明授权

US06211034B1 Metal patterning with adhesive hardmask layer 失效
标题翻译：金属图案与粘合剂硬掩模层
公开(公告)号：US06211034B1
公开(公告)日：2001-04-03
申请号：US09059546
申请日：1998-04-13
申请人： Mark R. Visokay , Luigi Colombo , Paul McIntyre , Scott R. Summerfelt
发明人： Mark R. Visokay , Luigi Colombo , Paul McIntyre , Scott R. Summerfelt
IPC分类号： H01L218242
CPC分类号： H01L28/60 , H01L21/32139 , H01L27/1085
摘要： An adherent hardmask structure and method of etching a bottom electrode in memory device capacitor structures that dispenses with the need for any adhesion promoter during the etching of the bottom electrode. By using silicon nitride as a hardmask 220, the processing is simplified and a more robust capacitor structure can be produced. Silicon nitride 220 has been shown to yield significantly enhanced adhesion to platinum 210, as compared to silicon oxide formed by any method. Since silicon nitride 220 is oxidation resistant, it advantageously resists any oxygen plasma that might be used in the etch chemistry. This etching process can be used during processing of high-k capacitor structures in DRAMs in the ≧256 Mbit generations.
摘要翻译：一种粘附硬掩模结构和蚀刻存储器件电容器结构中的底部电极的方法，其在底部电极的蚀刻期间省去了对任何粘附促进剂的需要。通过使用氮化硅作为硬掩模220，简化了处理，并且可以产生更坚固的电容器结构。与通过任何方法形成的氧化硅相比，已经显示氮化硅220产生显着增强的与铂210的粘合性。由于氮化硅220是抗氧化的，所以它有利地抵抗可能在蚀刻化学中使用的任何氧等离子体。这种蚀刻工艺可以在> = 256Mbit的DRAM中的高k电容器结构的处理期间使用。

8. 发明授权

US5972722A Adhesion promoting sacrificial etch stop layer in advanced capacitor structures 失效
标题翻译：先进的电容器结构中的粘附促进牺牲蚀刻停止层
公开(公告)号：US5972722A
公开(公告)日：1999-10-26
申请号：US60152
申请日：1998-04-14
申请人： Mark R. Visokay , Luigi Colombo , Paul McIntyre , Scott R. Summerfelt
发明人： Mark R. Visokay , Luigi Colombo , Paul McIntyre , Scott R. Summerfelt
IPC分类号： H01L21/02 , H01L21/311 , H01L21/8242 , H01G7/06
CPC分类号： H01L27/1085 , H01L21/31116 , H01L28/55 , H01L28/60
摘要： A high-k dielectric capacitor structure and fabrication method that incorporates an adhesion promoting etch stop layer 200 to promote adhesion of the bottom electrode 220 to the interlevel dielectric layer 210 and to provide a well controlled, repeatable and uniform recess prior to the dielectric 230 deposition. By using a sacrificial layer 200, for example silicon nitride (Si3N4), this layer can act as an etch stop during the recess etch to eliminate parasitic capacitance between adjacent capacitor cells A and B and can promote adhesion of the bottom electrode material 220 to the substrate 210.
摘要翻译：高k电介质电容器结构和制造方法，其包含粘附促进蚀刻停止层200以促进底部电极220粘附到层间电介质层210，并且在电介质230沉积之前提供良好控制的，可重复的和均匀的凹部。通过使用牺牲层200（例如氮化硅（Si 3 N 4）），该层可以在凹陷蚀刻期间用作蚀刻停止以消除相邻的电容器电池A和B之间的寄生电容，并且可以促进底部电极材料220与衬底210。

9. 发明申请

US20070226945A1 Gutter cleaning vacuum system including a novel hinged vacuum manifold assembly 有权
标题翻译：沟槽清洁真空系统包括一个新颖的铰链真空歧管组件
公开(公告)号：US20070226945A1
公开(公告)日：2007-10-04
申请号：US11726465
申请日：2007-03-21
申请人： Paul McIntyre
发明人： Paul McIntyre
IPC分类号： A47L9/00
CPC分类号： A47L5/365 , A47L9/009 , A47L9/1418 , E04D13/0765 , Y10S55/03
摘要： In various exemplary embodiments, the present invention provides a lightweight, maneuverable, thin-walled, transparent apparatus for use with a heavy-duty vacuum system for quickly and easily collecting and storing large volumes of bulky debris, thereby reducing the time needed for cleanup. The present invention also provides an improved vacuum manifold assembly that may be used in conjunction with various gas and electric blower/vacuum motors, both novel and conventional. The present invention further provides various gutter cleaning and other tools that may be used in conjunction with such a vacuum system. The gutter cleaning vacuum system including the improved hinged vacuum manifold assembly of the present invention has sufficient power and is designed such that the various gutter cleaning and other tools are effective, suction-wise, at great distances from the unit, such that an operator may use the gutter cleaning and other tools at great distances over his/her head, for example.
摘要翻译：在各种示例性实施例中，本发明提供了一种与重型真空系统一起使用的轻质的，可操作的薄壁透明装置，用于快速且容易地收集和存储大量的大块碎屑，从而减少了清理所需的时间。本发明还提供了一种改进的真空歧管组件，其可以与新颖的和常规的各种气体和电动鼓风机/真空马达结合使用。本发明还提供了可以与这种真空系统结合使用的各种沟槽清洁和其它工具。包括本发明的改进的铰接式真空歧管组件的沟槽清洁真空系统具有足够的功率，并且被设计成使得各种沟槽清洁和其它工具在抽吸方面距离单元很远的距离是有效的，使得操作者可以例如，在他/她的头上使用沟槽清洁和其他工具在很远的距离。

10. 发明申请

US20070099435A1 Method and system for forming a nitrided germanium-containing layer using plasma processing 失效
公开(公告)号：US20070099435A1
公开(公告)日：2007-05-03
申请号：US11263402
申请日：2005-10-31
申请人： Takuya Sugawara , Paul McIntyre
发明人： Takuya Sugawara , Paul McIntyre
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02247 , C23C8/02 , C23C8/36 , H01J2237/3387 , H01L21/02252 , H01L21/02337 , H01L21/02343 , H01L21/28202 , H01L21/28255 , H01L21/3143 , H01L21/318
摘要： A method and system for forming a nitrided germanium-containing layer by plasma processing. The method includes providing a germanium-containing substrate in a process chamber, generating a plasma from a process gas containing N2 and a noble gas, where the plasma conditions are selected effective to form plasma excited N2 species while controlling formation of plasma excited N species, and exposing the substrate to the plasma to form a nitrided germanium-containing layer on the substrate. A method is also provided that includes exposing a germanium-containing dielectric layer to liquid or gaseous H2O to alter the thickness and chemical composition of the layer.

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