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1. 发明申请

US20100116207A1 REACTION CHAMBER 审中-公开
标题翻译：反应室
公开(公告)号：US20100116207A1
公开(公告)日：2010-05-13
申请号：US12613436
申请日：2009-11-05
申请人： Michael Givens , Matthew Goodman , Mark Hawkins , Brad Halleck , Herbert Terhorst
发明人： Michael Givens , Matthew Goodman , Mark Hawkins , Brad Halleck , Herbert Terhorst
IPC分类号： C23C16/00
CPC分类号： H01L21/6719 , C23C16/45504 , C23C16/45589 , C23C16/45591
摘要： A reaction chamber having a reaction spaced defined therein, wherein the reaction space is tunable to produce substantially stable and laminar flow of gases through the reaction space. The substantially stable and laminar flow is configured to improve the uniformity of deposition on substrates being processed within the reaction chamber to provide a predictable deposition profile.
摘要翻译：反应室具有限定在其中的反应间隔，其中反应空间是可调的，以产生通过反应空间的基本上稳定和层流的气体。基本上稳定的层流构造成改善在反应室内正在处理的衬底上的沉积的均匀性，以提供可预测的沉积轮廓。

2. 发明授权

US08047706B2 Calibration of temperature control system for semiconductor processing chamber 有权
标题翻译：半导体处理室温度控制系统校准
公开(公告)号：US08047706B2
公开(公告)日：2011-11-01
申请号：US12273440
申请日：2008-11-18
申请人： Matthew G. Goodman , Mark Hawkins , Ravinder Aggarwal , Michael Givens , Eric Hill , Gregory Bartlett
发明人： Matthew G. Goodman , Mark Hawkins , Ravinder Aggarwal , Michael Givens , Eric Hill , Gregory Bartlett
IPC分类号： G01K15/00
CPC分类号： G01K15/00
摘要： Methods and systems for calibrating a temperature control system in a vapor deposition chamber. A temperature sensor senses temperature within a semiconductor processing chamber and generates an output signal. A temperature control system controls a chamber temperature by controlling a heating apparatus based on the output signal. A method includes instructing the control system to target a setpoint temperature, and depositing a layer of material onto a surface in the chamber by a vapor deposition process. A variation of a property of the layer is measured while depositing the layer, the property known to vary cyclically as a thickness of the layer increases. The measured property is allowed to vary cyclically for one or more cycles. If there is a difference between a time period of one or more of the cycles and an expected time period associated with the setpoint temperature, the temperature control system is adjusted based on the difference.
摘要翻译：用于校准气相沉积室中的温度控制系统的方法和系统。温度传感器感测半导体处理室内的温度并产生输出信号。温度控制系统通过基于输出信号控制加热装置来控制室温度。一种方法包括指示控制系统目标设定点温度，以及通过气相沉积工艺将一层材料沉积在腔室的表面上。在沉积层时测量该层的性质的变化，已知随着层的厚度周期性变化的性质增加。允许测量的特性循环变化一个或多个循环。如果一个或多个循环的时间段与与设定点温度相关联的期望时间段之间存在差异，则基于该差异来调整温度控制系统。

3. 发明申请

US20050233529A1 Integration of high k gate dielectric 有权
标题翻译：高k栅介质的集成
公开(公告)号：US20050233529A1
公开(公告)日：2005-10-20
申请号：US11148721
申请日：2005-06-09
申请人： Christophe Pomarede , Michael Givens , Eric Shero , Michael Todd
发明人： Christophe Pomarede , Michael Givens , Eric Shero , Michael Todd
IPC分类号： C23C16/24 , C23C16/02 , C30B25/02 , H01L21/20 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/336 , H01L21/4763 , H01L21/8242 , H01L27/108 , H01L29/423 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/786 , H01L31/18 , H01L31/20
CPC分类号： H01L21/28194 , B82Y10/00 , C23C16/0272 , C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/28035 , H01L21/28044 , H01L21/28525 , H01L21/28556 , H01L29/4925 , H01L29/517 , H01L31/1804 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： Methods are provided herein for forming electrode layers over high dielectric constant (“high k”) materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide, is protected from reduction during a subsequent deposition of silicon-containing gate electrode. In particular, a seed deposition phase includes conditions designed for minimizing hydrogen reduction of the gate dielectric, including low hydrogen content, low temperatures and/or low partial pressures of the silicon source gas. Conditions are preferably changed for higher deposition rates and deposition continues in a bulk phase. Desirably, though, hydrogen diffusion is still minimized by controlling the above-noted parameters. In one embodiment, high k dielectric reduction is minimized through omission of a hydrogen carrier gas. In another embodiment, higher order silanes, aid in reducing hydrogen content for a given deposition rate.
摘要翻译：本文提供了用于在高介电常数（“高k”）材料上形成电极层的方法。在所示的实施例中，在接下来的含硅栅电极沉积期间，保护高k栅极电介质，例如氧化锆，以防止还原。特别地，种子沉积阶段包括设计用于最小化栅极电介质的氢还原的条件，包括硅源气体的低氢含量，低温和/或低分压。优选地，为了更高的沉积速率改变条件，并且在体相中继续沉积。然而，尽管通过控制上述参数仍然使氢扩散最小化。在一个实施例中，通过省略氢载体气体来最小化高k电介质的减小。在另一个实施方案中，高级硅烷有助于降低给定沉积速率的氢含量。

4. 发明申请

US20130292807A1 Semiconductor Device Dielectric Interface Layer 有权
标题翻译：半导体器件介质界面层
公开(公告)号：US20130292807A1
公开(公告)日：2013-11-07
申请号：US13465340
申请日：2012-05-07
申请人： Petri Raisanen , Michael Givens , Mohith Verghese
发明人： Petri Raisanen , Michael Givens , Mohith Verghese
IPC分类号： H01L29/51 , H01L21/66 , H01L21/316
CPC分类号： H01L21/02233 , H01L21/0214 , H01L21/02164 , H01L21/02172 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/022 , H01L21/0223 , H01L21/02236 , H01L21/02238 , H01L21/02247 , H01L21/02249 , H01L21/02252 , H01L21/0228 , H01L21/02304 , H01L21/02315 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L22/12 , H01L22/20 , H01L29/511 , H01L29/512 , H01L29/513 , H01L29/517
摘要： Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.
摘要翻译：提供了与在衬底上形成膜堆叠的方法相关的实施例。一个示例性方法包括将基底暴露于活化氧物质并将基底的暴露表面转化为第一介电材料的连续单层。该示例性方法还包括在第一介电材料的连续单层上形成第二介电材料，而不将基板暴露于空气断裂。

5. 发明申请

US20100107974A1 SUBSTRATE HOLDER WITH VARYING DENSITY 审中-公开
标题翻译：具有不同密度的基座
公开(公告)号：US20100107974A1
公开(公告)日：2010-05-06
申请号：US12266317
申请日：2008-11-06
申请人： Michael Givens , Mike Halpin , Matthew G. Goodman , Keir Kosco
发明人： Michael Givens , Mike Halpin , Matthew G. Goodman , Keir Kosco
IPC分类号： B05C13/02
CPC分类号： H01L21/68735 , H01L21/67103 , H01L21/67115 , H01L21/68785
摘要： A substrate support system comprises a substrate holder for supporting a substrate. The substrate holder comprises an interior portion sized and shaped to extend beneath most or all of a substrate supported on the substrate holder. The substrate holder has mass density that varies, preferably in order to compensate for variations in substrate temperature owing to surface geometry variations of the interior portion, so as to provide a more uniform thermal coupling between the substrate and substrate holder. The substrate holder is preferably configured to be spaced further apart from a substrate at the center than at the outer perimeter.
摘要翻译：衬底支撑系统包括用于支撑衬底的衬底支架。衬底保持器包括尺寸和形状以在支撑在衬底保持器上的基底的大部分或全部下延伸的内部部分。衬底保持器具有变化的质量密度，优选地为了补偿由于内部部分的表面几何形状变化引起的衬底温度的变化，从而在衬底和衬底保持器之间提供更均匀的热耦合。衬底保持器优选地构造成在中心处比在外周距离衬底更远地分开。

6. 发明申请

US20120158442A1 SYSTEMS AND METHODS FOR GENERATING A DYNAMIC OPTIMAL TRAVEL SOLUTION 审中-公开
标题翻译：用于生成动态最佳行驶解决方案的系统和方法
公开(公告)号：US20120158442A1
公开(公告)日：2012-06-21
申请号：US12970511
申请日：2010-12-16
申请人： Christa R. Ancri , Michael Givens , Satyendra Hiredesai , Prashant Lodha , Matthew Scott Love , Frank E. Schnur , Sangita R. Shah
发明人： Christa R. Ancri , Michael Givens , Satyendra Hiredesai , Prashant Lodha , Matthew Scott Love , Frank E. Schnur , Sangita R. Shah
IPC分类号： G06Q10/00
CPC分类号： G06Q10/02
摘要： A system and method for generating a dynamic optimal travel solution is disclosed. The method includes receiving an optimal travel solution and receiving consumption data, wherein the consumption data includes an actual market share. The method also includes receiving quality of service index data (QSI), wherein the QSI includes a maximum realistic market share, and generating a dynamic optimal travel solution, in response to the optimal travel solution, the consumption data, and the QSI.
摘要翻译：公开了一种用于生成动态最佳行驶方案的系统和方法。该方法包括接收最佳旅行解决方案和接收消费数据，其中消费数据包括实际市场份额。该方法还包括接收服务质量指标数据（QSI），其中QSI响应于最佳旅行方案，消费数据和QSI，包括最大实际市场份额，以及生成动态最佳旅行方案。

7. 发明授权

US08728832B2 Semiconductor device dielectric interface layer 有权
标题翻译：半导体器件介电界面层
公开(公告)号：US08728832B2
公开(公告)日：2014-05-20
申请号：US13465340
申请日：2012-05-07
申请人： Petri Raisanen , Michael Givens , Mohith Verghese
发明人： Petri Raisanen , Michael Givens , Mohith Verghese
IPC分类号： H01L29/51 , H01L21/314 , H01L21/66
CPC分类号： H01L21/02233 , H01L21/0214 , H01L21/02164 , H01L21/02172 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/022 , H01L21/0223 , H01L21/02236 , H01L21/02238 , H01L21/02247 , H01L21/02249 , H01L21/02252 , H01L21/0228 , H01L21/02304 , H01L21/02315 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L22/12 , H01L22/20 , H01L29/511 , H01L29/512 , H01L29/513 , H01L29/517
摘要： Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.
摘要翻译：提供了与在衬底上形成膜堆叠的方法相关的实施例。一个示例性方法包括将基底暴露于活化氧物质并将基底的暴露表面转化为第一介电材料的连续单层。该示例性方法还包括在第一介电材料的连续单层上形成第二介电材料，而不将基板暴露于空气断裂。

8. 发明申请

US20060216419A1 Sublimation bed employing carrier gas guidance structures 审中-公开
公开(公告)号：US20060216419A1
公开(公告)日：2006-09-28
申请号：US11442364
申请日：2006-05-25
申请人： Eric Shero , Michael Givens , Ryan Schmidt
发明人： Eric Shero , Michael Givens , Ryan Schmidt
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/4481 , C23C16/4483
摘要： Preferred embodiments of the present invention provides a sublimation system employing guidance structures including certain preferred embodiments having a high surface area support medium onto which a solid source material for vapor reactant is coated. Preferably, a guidance structure is configured to facilitate the repeated saturation of the carrier gas with the solid source for a vapor reactant. Methods of saturating a carrier gas using guidance structures are also provided.

9. 发明申请

US20050072357A1 Sublimation bed employing carrier gas guidance structures 有权
标题翻译：采用载气引导结构的升华床
公开(公告)号：US20050072357A1
公开(公告)日：2005-04-07
申请号：US10629029
申请日：2003-07-29
申请人： Eric Shero , Michael Givens , Ryan Schmidt
发明人： Eric Shero , Michael Givens , Ryan Schmidt
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , H01L21/31 , B05C5/02 , B05B5/12
CPC分类号： C23C16/45544 , C23C16/4481 , C23C16/4483
摘要： Preferred embodiments of the present invention provides a sublimation system employing guidance structures including certain preferred embodiments having a high surface area support medium onto which a solid source material for vapor reactant is coated. Preferably, a guidance structure is configured to facilitate the repeated saturation of the carrier gas with the solid source for a vapor reactant. Methods of saturating a carrier gas using guidance structures are also provided.
摘要翻译：本发明的优选实施方案提供了采用引导结构的升华系统，其包括具有高表面积支持介质的某些优选实施方案，在其上涂覆用于蒸汽反应物的固体源材料。优选地，引导结构被配置为促进载气与用于蒸汽反应物的固体源的反复饱和。还提供了使用引导结构使载气饱和的方法。

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