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1. 发明授权

US5803980A De-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residue 失效
标题翻译：去离子水/臭氧冲洗后氢氟酸处理，以防止硅酸残渣
公开(公告)号：US5803980A
公开(公告)日：1998-09-08
申请号：US725446
申请日：1996-10-04
申请人： Michael F. Pas , Jin-goo Park
发明人： Michael F. Pas , Jin-goo Park
IPC分类号： H01L21/306 , H01L21/311 , B08B3/00
CPC分类号： H01L21/02052 , H01L21/31111
摘要： One embodiment of the instant invention is a method of preventing the formation of silicic acid on exposed silicon of an electronic device formed on a silicon wafer and having silicon features, the method comprising: removing a portion of oxide (step 302) formed on the silicon wafer thereby exposing at least some portion of the silicon substrate or the silicon features; cleaning the silicon wafer by subjecting the silicon wafer to an ozonated solution (step 304), preferably deionized water; and drying the silicon wafer (step 306). Preferably, a thin oxide is formed on the silicon wafer during the step of subjecting the wafer to the ozonated solution. The thin oxide is, preferably, on the order of approximately 6 to 20 .ANG. thick. After removing said portions of oxide and thereby exposing portions of said silicon wafer and/or silicon feature, the exposed silicon becomes hydrophobic. However, after the exposed silicon is subjected to the ozonated solution, the silicon wafer becomes hydrophilic--thereby preventing the formation of silicic acid on the silicon wafer or the silicon features.
摘要翻译：本发明的一个实施方案是一种防止在硅晶片上形成并具有硅特征的电子器件的暴露硅上形成硅酸的方法，该方法包括：除去形成在硅上的一部分氧化物（步骤302）从而暴露硅衬底或硅特征的至少一部分; 通过使硅晶片经受臭氧化溶液（步骤304），优选去离子水来清洁硅晶片; 并干燥硅晶片（步骤306）。优选地，在将晶片经受臭氧化溶液的步骤期间，在硅晶片上形成薄氧化物。优选地，薄氧化物的厚度约为6至20埃。在去除氧化物的所述部分并且由此暴露所述硅晶片和/或硅特征的部分之后，暴露的硅变得疏水。然而，在暴露的硅经受臭氧化溶液之后，硅晶片变得亲水，从而防止在硅晶片或硅特征上形成硅酸。

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