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1. 发明授权

US08648589B2 Magnetoresistive sensor employing nitrogenated Cu/Ag under-layers with (100) textured growth as templates for CoFe, CoFeX, and Co2(MnFe)X alloys 有权
标题翻译：使用具有（100）织构生长的含氮Cu / Ag底层的磁阻传感器作为CoFe，CoFeX和Co2（MnFe）X合金的模板
公开(公告)号：US08648589B2
公开(公告)日：2014-02-11
申请号：US12581045
申请日：2009-10-16
申请人： Matthew J. Carey , Shekar B. Chandrashekariaih , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Shekar B. Chandrashekariaih , Jeffrey R. Childress , Stefan Maat
IPC分类号： G01P3/66
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/1936 , H01F10/30 , H01F10/3272 , H01F41/306 , H01F41/307
摘要： A magnetoresistive sensor that has a free layer with a face centered cubic, 100 crystal orientation formed on an underlayer structure that has been deposited in the presence of nitrogen. The free layer can be constructed of CoFe, Co2(Mn(1-y)Fey)X (where 0≦y≦1 and X is Si, Ge, Sn, Al, Ga, or a combination thereof), CoFeX (where X is Si, Ge, Sn, Al, Ga, or a combination thereof). The under-layer can include a layer of Ta, a Cu layer formed over the layer of Ta and deposited using a process gas comprising about 20 percent nitrogen and a layer of Ag deposited over the layer of Cu and deposited using a process gas comprising about 50 to 100 percent nitrogen.
摘要翻译：磁阻传感器具有形成在已经在氮存在下沉积的底层结构上的面心立方晶体取向的自由层。自由层可以由CoFe，Co2（Mn（1-y）Fey）X（其中0≤y≤1且X是Si，Ge，Sn，Al，Ga或它们的组合），CoFeX（其中X 是Si，Ge，Sn，Al，Ga或它们的组合）。底层可以包括一层Ta，在层Ta上形成的Cu层，并使用包含约20％的氮和沉积在Cu层上的沉积层的工艺气体沉积，并使用包含约 50至100％的氮气。

2. 发明申请

US20110089940A1 MAGNETORESISTIVE SENSOR EMPLOYING NITROGENATED Cu/Ag UNDER-LAYERS WITH (100) TEXTURED GROWTH AS TEMPLATES FOR CoFe, CoFeX, AND Co2(MnFe)X ALLOYS 有权
标题翻译：使用（100）纹理生长作为CoFe，CoFeX和Co2（MnFe）X合金的模板的氮化物Cu / Ag底层的磁电传感器
公开(公告)号：US20110089940A1
公开(公告)日：2011-04-21
申请号：US12581045
申请日：2009-10-16
申请人： Matthew J. Carey , Shekar B Chandrashekariaih , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Shekar B Chandrashekariaih , Jeffrey R. Childress , Stefan Maat
IPC分类号： G01R33/02 , B05D5/12 , C23C14/35
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/1936 , H01F10/30 , H01F10/3272 , H01F41/306 , H01F41/307
摘要： A magnetoresistive sensor that has a free layer with a face centered cubic, 100 crystal orientation formed on an underlayer structure that has been deposited in the presence of nitrogen. The free layer can be constructed of CoFe, Co2(Mn(1-y)Fey)X (where 0≦y≦1 and X is Si, Ge, Sn, Al, Ga, or a combination thereof), CoFeX (where X is Si, Ge, Sn, Al, Ga, or a combination thereof). The under-layer can include a layer of Ta, a Cu layer formed over the layer of Ta and deposited using a process gas comprising about 20 percent nitrogen and a layer of Ag deposited over the layer of Cu and deposited using a process gas comprising about 50 to 100 percent nitrogen.
摘要翻译：磁阻传感器具有形成在已经在氮存在下沉积的底层结构上的面心立方晶体取向的自由层。自由层可以由CoFe，Co2（Mn（1-y）Fey）X（其中0＆nlE; y＆nlE; 1和X是Si，Ge，Sn，Al，Ga或它们的组合），CoFeX（其中X 是Si，Ge，Sn，Al，Ga或它们的组合）。底层可以包括一层Ta，在层Ta上形成的Cu层，并使用包含约20％的氮和沉积在Cu层上的沉积层的工艺气体沉积，并使用包含约 50至100％的氮气。

3. 发明授权

US08178158B2 Method for making a current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor with a confined-current-path (CCP) 有权
标题翻译：制造具有限流电路（CCP）的电流垂直于平面的巨磁阻（CPP-GMR）传感器的方法
公开(公告)号：US08178158B2
公开(公告)日：2012-05-15
申请号：US12131863
申请日：2008-06-02
申请人： Thomas R. Berthold , Matthew J. Carey , Jeffrey R. Childress , Jordan Asher Katine , Stefan Maat
发明人： Thomas R. Berthold , Matthew J. Carey , Jeffrey R. Childress , Jordan Asher Katine , Stefan Maat
IPC分类号： G11B5/00 , G11B5/127 , G11B5/133
CPC分类号： H01F41/307 , B82Y10/00 , B82Y25/00 , B82Y30/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/005 , H01F10/3259 , H01F10/3272
摘要： A method of making a current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor with a confined-current-path (CCP) layer uses an array of self-assembled ferritin protein molecules with inorganic cores to make the CCP layer in the sensor stack. In one embodiment, the ferritin molecules with cores of insulating oxide particles are deposited on an electrically conductive support layer and the ferritin molecules are dissolved, leaving an array of insulating oxide particles. An electrically conducting layer is deposited over the oxide particles and into the regions between the oxide particles to form the CCP layer. In another embodiment, the ferritin molecules with inorganic particles in their cores are deposited on an electrically insulating support layer and the ferritin molecules are dissolved, leaving an array of inorganic particles that function as an etch mask. The insulating support layer is then etched through the mask to form vias down to the underlying layer on which the support layer is formed. An electrically conducting layer is then deposited to form the CCP layer.
摘要翻译：使用限制电流路径（CCP）层制造电流垂直于平面的巨磁阻（CPP-GMR）传感器的方法使用具有无机芯的自组装铁蛋白分子阵列来制备CCP 传感器堆叠中的层。在一个实施方案中，具有绝缘氧化物颗粒核心的铁蛋白分子沉积在导电支撑层上，铁蛋白分子溶解，留下绝缘氧化物颗粒阵列。将导电层沉积在氧化物颗粒上并进入氧化物颗粒之间的区域中以形成CCP层。在另一个实施方案中，其核心中具有无机颗粒的铁蛋白分子沉积在电绝缘支撑层上，并且铁蛋白分子被溶解，留下用作蚀刻掩模的无机颗粒阵列。然后通过掩模蚀刻绝缘支撑层，以形成通向下面到其上形成有支撑层的下层的通孔。然后沉积导电层以形成CCP层。

4. 发明授权

US08154829B2 Tunneling magnetoresistive (TMR) device with improved ferromagnetic underlayer for MgO tunneling barrier layer 有权
标题翻译：隧道磁阻（TMR）器件具有用于MgO隧道势垒层的改进的铁磁底层
公开(公告)号：US08154829B2
公开(公告)日：2012-04-10
申请号：US12553864
申请日：2009-09-03
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/127
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909
摘要： A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording hard disk drive, has a magnesium oxide (MgO) tunneling barrier layer and a ferromagnetic underlayer beneath and in direct contact with the MgO tunneling barrier layer. The ferromagnetic underlayer comprises a crystalline material according to the formula (CoxFe(100-x))(100-y)Gey, where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 26 and 37. The ferromagnetic underlayer may be the CoxFe(100-x))(100-y)Gey portion of a bilayer of two ferromagnetic layers, for example a CoFe/(CoxFe(100-x))(100-y)Gey bilayer. The specific composition of the ferromagnetic underlayer improves the crystallinity of the MgO tunneling barrier after annealing and improves the tunneling magnetoresistance of the TMR device.
摘要翻译：隧道磁阻（TMR）器件，如磁记录硬盘驱动器的TMR读头，具有氧化镁（MgO）隧道势垒层和在MgO隧道势垒层下面直接接触的铁磁性底层。铁磁底层包含根据式（CoxFe（100-x））（100-y）Gey的结晶材料，其中下标表示原子百分比，x在约45和55之间，y在约26和37之间。铁磁性底层可以是两个铁磁层的双层的CoxFe（100-x））（100-y）Gey部分，例如CoFe /（CoxFe（100-x））（100-y）Gey双层。铁磁性底层的具体组成提高了退火后MgO隧道势垒的结晶度，提高了TMR器件的隧穿磁阻。

5. 发明授权

US07957107B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-free layer structure and low current-induced noise 有权
标题翻译：具有反平行自由层结构和低电流感应噪声的电流垂直平面（CPP）磁阻传感器
公开(公告)号：US07957107B2
公开(公告)日：2011-06-07
申请号：US12502764
申请日：2009-07-14
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL1), a second free ferromagnetic layer (FL2), and an antiparallel (AP) coupling (APC) layer that couples FL1 and FL2 together antiferromagnetically with the result that FL1 and FL2 have substantially antiparallel magnetization directions and rotate together in the presence of a magnetic field. The thickness of FL1 is preferably greater than the spin-diffusion length of the electrons in the FL1 material. The minimum thickness for FL2 is a thickness resulting in a FL2 magnetic moment equivalent to at least 10 Å Ni80Fe20 and preferably to at least 15 Å Ni80Fe20. The CPP sensor operates specifically with the conventional sense current (opposite the electron current) directed from the pinned ferromagnetic layer to the APF structure, which results in suppression of current-induced noise.
摘要翻译：电流垂直平面（CPP）磁阻传感器具有作为自由层的反向平行自由（APF）结构和施加的偏置或感测电流的特定方向。（APF）结构具有第一自由铁磁（FL1），第二自由铁磁层（FL2）和反FL-FL2与FL2耦合的反并联（AP）耦合（APC）层，其结果是FL1和FL2具有实质上反平行磁化方向，并且在存在磁场的情况下一起旋转。 FL1的厚度优选大于FL1材料中的电子的自旋扩散长度。 FL2的最小厚度是导致等于至少10埃NiFeFe 2的FL2磁矩并且优选至少为15埃的Ni38Fe20的厚度。 CPP传感器与从钉扎铁磁层引导到APF结构的常规感测电流（与电子电流相反）特别地工作，这导致电流引起的噪声的抑制。

6. 发明授权

US07957106B2 Chemically disordered material used to form a free layer or a pinned layer of a magnetoresistance (MR) read element 有权
标题翻译：用于形成磁阻（MR）读取元件的自由层或固定层的化学无序材料
公开(公告)号：US07957106B2
公开(公告)日：2011-06-07
申请号：US11742313
申请日：2007-04-30
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , H01L43/08 , Y10T428/1121
摘要： Magnetoresistive (MR) read elements and associated methods of fabrication are disclosed. A free layer and/or a pinned layer of an MR read element are formed from a magnetic material such as Co2−x−yMn1+xAl1+y, Co2−x−yMn1+xSi1+y, Co2−x−yMn1+xGe1+y, and Co2−x−yFe1+xSi1+y, where x and y are selected to create an off-stoichiometric alloy having a crystalline structure that is chemically disordered. The chemically disordered magnetic material has a lower spin-polarization than a Heusler alloy, but still exhibits acceptable GMR amplitudes and low spin-torque noise.
摘要翻译：公开了磁阻（MR）读取元件和相关的制造方法。 MR读取元件的自由层和/或固定层由诸如Co2-x-yMn1 + xAl1 + y，Co2-x-yMn1 + xSi1 + y，Co2-x-yMn1 + xGe1 + y和Co2-x-yFe1 + xSi1 + y，其中x和y被选择以产生具有化学紊乱的晶体结构的非化学计量合金。化学无序磁性材料具有比Heusler合金更低的自旋极化，但仍然表现出可接受的GMR振幅和低的自旋扭矩噪声。

7. 发明申请

US20090297700A1 METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE GIANT MAGNETORESISTANCE (CPP-GMR) SENSOR WITH A CONFINED-CURRENT-PATH (CCP) 有权
标题翻译：用于制定具有限流电路（CCP）的电流 - 平面到大面积磁阻（CPP-GMR）传感器的方法
公开(公告)号：US20090297700A1
公开(公告)日：2009-12-03
申请号：US12131863
申请日：2008-06-02
申请人： Thomas R. Berthold , Matthew J. Carey , Jeffrey R. Childress , Jordan Asher Katine , Stefan Maat
发明人： Thomas R. Berthold , Matthew J. Carey , Jeffrey R. Childress , Jordan Asher Katine , Stefan Maat
IPC分类号： B05D5/12
CPC分类号： H01F41/307 , B82Y10/00 , B82Y25/00 , B82Y30/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/005 , H01F10/3259 , H01F10/3272
摘要： A method of making a current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor with a confined-current-path (CCP) layer uses an array of self-assembled ferritin protein molecules with inorganic cores to make the CCP layer in the sensor stack. In one embodiment, the ferritin molecules with cores of insulating oxide particles are deposited on an electrically conductive support layer and the ferritin molecules are dissolved, leaving an array of insulating oxide particles. An electrically conducting layer is deposited over the oxide particles and into the regions between the oxide particles to form the CCP layer. In another embodiment, the ferritin molecules with inorganic particles in their cores are deposited on an electrically insulating support layer and the ferritin molecules are dissolved, leaving an array of inorganic particles that function as an etch mask. The insulating support layer is then etched through the mask to form vias down to the underlying layer on which the support layer is formed. An electrically conducting layer is then deposited to form the CCP layer.
摘要翻译：使用限制电流路径（CCP）层制造电流垂直于平面的巨磁阻（CPP-GMR）传感器的方法使用具有无机芯的自组装铁蛋白分子阵列来制备CCP 传感器堆叠中的层。在一个实施方案中，具有绝缘氧化物颗粒核心的铁蛋白分子沉积在导电支撑层上，铁蛋白分子溶解，留下绝缘氧化物颗粒阵列。将导电层沉积在氧化物颗粒上并进入氧化物颗粒之间的区域中以形成CCP层。在另一个实施方案中，其核心中具有无机颗粒的铁蛋白分子沉积在电绝缘支撑层上，并且铁蛋白分子被溶解，留下用作蚀刻掩模的无机颗粒阵列。然后通过掩模蚀刻绝缘支撑层，以形成通向下面到其上形成有支撑层的下层的通孔。然后沉积导电层以形成CCP层。

8. 发明申请

US20080268290A1 CHEMICALLY DISORDERED MATERIAL USED TO FORM A FREE LAYER OR A PINNED LAYER OF A MAGNETORESISTANCE (MR) READ ELEMENT 有权
标题翻译：用于形成自由层或磁铁层（MR）读取单元的密封层的化学物质
公开(公告)号：US20080268290A1
公开(公告)日：2008-10-30
申请号：US11742313
申请日：2007-04-30
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , H01L43/08 , Y10T428/1121
摘要： Magnetoresistive (MR) read elements and associated methods of fabrication are disclosed. A free layer and/or a pinned layer of an MR read element are formed from a magnetic material such as Co2−x−yMn1+xAl1+y, Co2−x−yMn1+xSi1+y, Co2−x−yMn1+xGe1+y, and Co2−x−yFe1+xSi1+y, where x and y are selected to create an off-stoichiometric alloy having a crystalline structure that is chemically disordered. The chemically disordered magnetic material has a lower spin-polarization than a Heusler alloy, but still exhibits acceptable GMR amplitudes and low spin-torque noise.
摘要翻译：公开了磁阻（MR）读取元件和相关的制造方法。 MR读取元件的自由层和/或钉扎层由诸如Co 2-xy Mn 1 + x Al 1 + 1的磁性材料形成， Co 2-xy Mn 1 + x 1 Si 1 + y 2，Co 2-xy > Mn 1 + x 1 Ge + 1 + y＆gt;和Co 2-xy Fe 1 + x Si > 1 + y

9. 发明授权

US07289304B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved antiparallel-pinned structure 失效
标题翻译：电流垂直平面（CPP）磁阻传感器具有改进的反平行销钉结构
公开(公告)号：US07289304B2
公开(公告)日：2007-10-30
申请号：US10977300
申请日：2004-10-29
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906
摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an improved antiparallel (AP) pinned structure. The AP-pinned structure has two ferromagnetic layers separated by a nonmagnetic antiparallel coupling (APC) layer and with their magnetization directions oriented antiparallel. One of the ferromagnetic layers in the AP-pinned structure is the reference layer in contact with the CPP-SV sensor's nonmagnetic electrically conducting spacer layer. In the improved AP-pinned structure each of the ferromagnetic layers has a thickness greater than 30 Å, preferably greater than approximately 50 Å, and the APC layer is either Ru or Ir with a thickness less than 7 Å, preferably about 5 Å or less. The ultrathin APC layer, especially if formed of iridium (Ir), provides significant coupling strength to allow the thick ferromagnetic layers to retain their magnetization directions in a stable antiparallel orientation.
摘要翻译：电流垂直于平面的自旋阀（CPP-SV）磁阻传感器具有改进的反平行（AP）钉扎结构。 AP钉扎结构具有由非磁性反平行耦合（APC）层分离并且其磁化方向反平行取向的两个铁磁层。 AP钉扎结构中的一个铁磁层是与CPP-SV传感器的非磁性导电间隔层接触的参考层。在改进的AP钉扎结构中，每个铁磁层的厚度大于30埃，优选大于约400埃，APC层是厚度小于7埃，优选约5埃或更小的Ru或Ir 。超薄APC层，特别是如果由铱（Ir）形成，则提供显着的耦合强度，以使厚的铁磁层保持其稳定的反向平行取向的磁化方向。

10. 发明授权

US08014109B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned layer containing silicon 有权
标题翻译：电流垂直于平面（CPP）磁阻传感器，包含硅的反平行钉扎层
公开(公告)号：US08014109B2
公开(公告)日：2011-09-06
申请号：US11867063
申请日：2007-10-04
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/33
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3259 , H01F10/3272 , H01L43/08
摘要： A current-perpendicular-to-the-plane (CPP) spin-valve (SV) magnetoresistive sensor uses an antiparallel (AP) pinned structure and has a ferromagnetic alloy comprising Co, Fe and Si in the reference layer of the AP-pinned structure and optionally in the CPP-SV sensor's free layer. The reference layer or AP2 layer is a multilayer of a first AP2-1 sublayer that contains no Si and is in contact with the AP-pinned structure's antiparallel coupling (APC) layer, and a second AP2-2 sublayer that contains Si and is in contact with the CPP-SV sensor's spacer layer. The Si-containing alloy may consist essentially of only Co, Fe and Si according to the formula (CoxFe(100-X))(100-y)Siy where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 20 and 30.
摘要翻译：电流垂直平面（CPP）自旋阀（SV）磁阻传感器使用反平行（AP）钉扎结构，并且在AP钉扎结构的参考层中具有包含Co，Fe和Si的铁磁合金并且可选地在CPP-SV传感器的自由层中。参考层或AP2层是不含Si且与AP钉扎结构的反向平行耦合（APC）层接触的第一AP2-1子层的多层，以及含有Si的第二AP2-2子层与CPP-SV传感器的间隔层接触。含Si的合金基本上可以由下式（Co x Fe（100-x））（100-y）Si y的仅Co，Fe和Si组成，其中下标表示原子百分数，x在约45和55之间，y 在大约20到30之间。

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