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1. 发明授权

US08654313B2 Exposing method and method of manufacturing semiconductor device 失效
标题翻译：揭示半导体器件制造方法和方法
公开(公告)号：US08654313B2
公开(公告)日：2014-02-18
申请号：US12952835
申请日：2010-11-23
申请人： Masanori Takahashi , Takashi Sato , Satoshi Tanaka , Soichi Inoue , Takamasa Takaki
发明人： Masanori Takahashi , Takashi Sato , Satoshi Tanaka , Soichi Inoue , Takamasa Takaki
IPC分类号： G03B27/32 , G03B27/54 , G03B27/72 , G03B27/52
CPC分类号： G03F7/2016 , G03F7/70408 , H01L21/0274
摘要： According to one embodiment, on a substrate, a resist layer is laminated on an upper side of a pattern formation layer on which a desired pattern is formed. A diffraction pattern that diffracts exposure light irradiated on the substrate is formed further on the upper side than the resist layer. Overall exposure is performed from above the diffraction pattern using a deformed light having illumination light source shape determined according to the desired pattern. Diffracted light diffracted on the diffraction pattern by the exposure is irradiated on the resist layer.
摘要翻译：根据一个实施例，在基板上，在其上形成有所需图案的图案形成层的上侧层压抗蚀剂层。衍射照射在基板上的曝光光的衍射图案进一步形成在抗蚀剂层的上侧。使用具有根据期望图案确定的照明光源形状的变形光从衍射图案上方进行总体曝光。通过曝光在衍射图案上衍射的衍射光被照射在抗蚀剂层上。

2. 发明申请

US20090041382A1 SIMULATION METHOD OF OPTICAL IMAGE INTENSITY DISTRIBUTION, PROGRAM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：光学图像强度分布的仿真方法，程序和制造半导体器件的方法
公开(公告)号：US20090041382A1
公开(公告)日：2009-02-12
申请号：US12187589
申请日：2008-08-07
申请人： Masanori Takahashi , Satoshi Tanaka
发明人： Masanori Takahashi , Satoshi Tanaka
IPC分类号： G06K9/36
CPC分类号： G03F7/70508 , G03F1/36 , G03F7/705
摘要： The intensity distribution of an optical image in a resist film is calculated (S1); the intensity distribution of the optical image is transformed through a Fourier transform in a periodic direction of the intensity distribution of the optical image (S2) and is transformed through a spectral transform in an aperiodic direction of the intensity distribution of the optical image by use of a base which satisfies a boundary condition (S3); a modulation function for modulating the intensity distribution of the optical image is transformed through a Fourier transform in the periodic direction (S4) and is transformed through a spectral transform in the aperiodic direction by use of the base satisfying the boundary direction (S5); a product of the post-transformed intensity distribution of the optical image and the post-transformed modulation function is computed (S6), is transformed through an inverse Fourier transform in the periodic direction (S7), and is transformed through an inverse spectral transform in the aperiodic direction by use of a base corresponding to the inverse transform of the spectral transform; and thereby a modulated intensity distribution of the optical image is calculated (S8).
摘要翻译：计算抗蚀剂膜中光学图像的强度分布（S1）; 通过在光学图像的强度分布的周期方向上的傅里叶变换（S2）来变换光学图像的强度分布，并且通过使用光学图像的强度分布的非周期方向的光谱变换来变换满足边界条件的基座（S3）; 用于调制光学图像的强度分布的调制函数通过周期性方向的傅立叶变换（S4）进行变换，并且通过使用满足边界方向的基准（S5）在非周期性方向上进行频谱变换来变换。计算光学图像的后变换强度分布和后变换调制函数的乘积（S6），通过周期方向上的逆傅立叶变换（S7）进行变换，并通过逆频谱变换通过使用与频谱变换的逆变换相对应的基极的非周期性方向; 从而计算光学图像的调制强度分布（S8）。

3. 发明授权

US08318393B2 Optical-image-intensity calculating method, pattern generating method, and manufacturing method of semiconductor device 有权
标题翻译：光学图像强度计算方法，图案生成方法和半导体器件的制造方法
公开(公告)号：US08318393B2
公开(公告)日：2012-11-27
申请号：US12960074
申请日：2010-12-03
申请人： Masanori Takahashi , Satoshi Tanaka
发明人： Masanori Takahashi , Satoshi Tanaka
IPC分类号： G03F9/00
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/70466
摘要： According to the embodiment, an optical image intensity distribution to be formed in a resist arranged on a lower layer side of a diffraction pattern is calculated by performing a whole image exposure from an upper surface side of the diffraction pattern formed on a substrate. The optical image intensity distribution is calculated by using a multimode waveguide analysis model or a fractional Fourier transform with respect to the diffraction pattern.
摘要翻译：根据本实施例，通过从形成在基板上的衍射图案的上表面侧进行整体图像曝光来计算要形成在衍射图案的下层侧的抗蚀剂中的光学图像强度分布。通过使用关于衍射图案的多模波导分析模型或分数阶傅里叶变换来计算光学图像强度分布。

4. 发明授权

US08171433B2 Method of calculating pattern-failure-occurrence-region, computer program product, pattern-layout evaluating method, and semiconductor-device manufacturing method 有权
标题翻译：计算图案故障发生区域，计算机程序产品，图案布局评估方法和半导体器件制造方法的方法
公开(公告)号：US08171433B2
公开(公告)日：2012-05-01
申请号：US12554495
申请日：2009-09-04
申请人： Masanori Takahashi , Toshiya Kotani , Satoshi Tanaka
发明人： Masanori Takahashi , Toshiya Kotani , Satoshi Tanaka
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： Method of calculating pattern-failure-occurrence-region comprising calculating a pattern failure occurrence region using relation information and a layout used for forming a convex section, the relation information being a relation between a distance from a formed pattern in a film to cover the convex section on a substrate to the convex section and a region in the film in which a shape of the formed pattern cannot satisfy a predetermined condition because of influence of the convex section.
摘要翻译：计算图案故障发生区域的方法包括使用关系信息和用于形成凸部的布局来计算图案故障发生区域，所述关系信息是从胶片中形成的图案到覆盖凸起的距离之间的关系由于凸部的影响，形成图案的形状不能满足规定条件的膜中的与凸部的基板上的区域。

5. 发明申请

US20100304279A1 MANUFACTURING METHOD OF PHASE SHIFT MASK, CREATING METHOD OF MASK DATA OF PHASE SHIFT MASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：相位移屏幕的制造方法，相位移屏蔽掩模数据的创建方法以及半导体器件的制造方法
公开(公告)号：US20100304279A1
公开(公告)日：2010-12-02
申请号：US12708944
申请日：2010-02-19
申请人： Akiko MIMOTOGI , Satoshi Tanaka , Masanori Takahashi , Yoko Takekawa , Takamasa Takaki , Katsuyoshi Kodera , Hideichi Kawaguchi
发明人： Akiko MIMOTOGI , Satoshi Tanaka , Masanori Takahashi , Yoko Takekawa , Takamasa Takaki , Katsuyoshi Kodera , Hideichi Kawaguchi
IPC分类号： G03F1/00 , G03F7/20 , G06K9/00
CPC分类号： G03F1/26
摘要： A phase shift mask having a plurality of mask patterns or mask data thereof is prepared, and an overlapped focus range in each of the mask patterns in a case where a result of exposure to each of the mask patterns, obtained by an exposure experiment or a lithography simulation, meets a desired dimension is obtained. A digging depth is determined at discretion based on the obtained overlapped focus range.
摘要翻译：准备具有多个掩模图案或其掩模数据的相移掩模，并且在通过曝光实验获得的每个掩模图案的曝光结果的情况下，每个掩模图案中的重叠对焦范围获得满足所需尺寸的光刻模拟。基于所获得的重叠对焦范围，决定挖掘深度。

6. 发明授权

US08068663B2 Simulation method of optical image intensity distribution, program, and method of manufacturing semiconductor device 有权
标题翻译：光学图像强度分布，程序和半导体器件制造方法的仿真方法
公开(公告)号：US08068663B2
公开(公告)日：2011-11-29
申请号：US12187589
申请日：2008-08-07
申请人： Masanori Takahashi , Satoshi Tanaka
发明人： Masanori Takahashi , Satoshi Tanaka
IPC分类号： G06K9/00
CPC分类号： G03F7/70508 , G03F1/36 , G03F7/705
摘要： The intensity distribution of an optical image in a resist film is calculated (S1); the intensity distribution of the optical image is transformed through a Fourier transform in a periodic direction of the intensity distribution of the optical image (S2) and is transformed through a spectral transform in an aperiodic direction of the intensity distribution of the optical image by use of a base which satisfies a boundary condition (S3); a modulation function for modulating the intensity distribution of the optical image is transformed through a Fourier transform in the periodic direction (S4) and is transformed through a spectral transform in the aperiodic direction by use of the base satisfying the boundary direction (S5); a product of the post-transformed intensity distribution of the optical image and the post-transformed modulation function is computed (S6), is transformed through an inverse Fourier transform in the periodic direction (S7), and is transformed through an inverse spectral transform in the aperiodic direction by use of a base corresponding to the inverse transform of the spectral transform; and thereby a modulated intensity distribution of the optical image is calculated (S8).
摘要翻译：计算抗蚀剂膜中光学图像的强度分布（S1）; 通过在光学图像的强度分布的周期方向上的傅里叶变换（S2）来变换光学图像的强度分布，并且通过使用光学图像的强度分布的非周期方向的光谱变换来变换满足边界条件的基座（S3）; 用于调制光学图像的强度分布的调制函数通过周期性方向的傅里叶变换（S4）进行变换，并且通过使用满足边界方向的基准（S5）在非周期性方向上进行频谱变换来变换。计算光学图像的后变换强度分布和后变换调制函数的乘积（S6），通过周期方向上的逆傅立叶变换（S7）进行变换，并通过逆频谱变换通过使用与频谱变换的逆变换相对应的基极的非周期性方向; 从而计算光学图像的调制强度分布（S8）。

7. 发明申请

US20110238196A1 METHOD FOR SIMULATING ELECTROMAGNETIC FIELD, ELECTROMAGNETIC FIELD SIMULATION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于模拟电磁场的方法，电磁场仿真装置及制造半导体器件的方法
公开(公告)号：US20110238196A1
公开(公告)日：2011-09-29
申请号：US13038901
申请日：2011-03-02
申请人： Masanori Takahashi , Satoshi Tanaka
发明人： Masanori Takahashi , Satoshi Tanaka
IPC分类号： G06F17/50 , G06F17/11
CPC分类号： G06F17/5018 , G06F2217/12 , G06F2217/16 , Y02P90/265
摘要： According to one embodiment, a method is disclosed for simulating an electromagnetic field. The method can set a first mesh on a calculation region provided based on a medium through which an electromagnetic wave propagates. The method can calculate an electromagnetic field distribution on the first mesh by a frequency region solution based on characteristic values of the medium allocated on the first mesh. The method can set a second mesh on the calculation region. The method can allocate the electromagnetic field distribution obtained by the frequency region solution to the second mesh. In addition, the method can update the electromagnetic field distribution allocated to the second mesh in a predetermined time unit by a time region solution.
摘要翻译：根据一个实施例，公开了一种用于模拟电磁场的方法。该方法可以在基于电磁波传播的介质提供的计算区域上设置第一网格。该方法可以基于在第一网格上分配的介质的特征值，通过频域解决方案计算第一网格上的电磁场分布。该方法可以在计算区域上设置第二个网格。该方法可以将由频域解决方案获得的电磁场分布分配给第二个网格。此外，该方法可以通过时间域解决方案以预定时间单位更新分配给第二网格的电磁场分布。

8. 发明授权

US08851259B2 Electromagnetic clutch, compressor, and manufacturing method for electromagnetic clutch 有权
标题翻译：电磁离合器，压缩机及电磁离合器的制造方法
公开(公告)号：US08851259B2
公开(公告)日：2014-10-07
申请号：US13379129
申请日：2010-06-17
申请人： Masafumi Hamasaki , Masanori Takahashi , Shinichi Isobe
发明人： Masafumi Hamasaki , Masanori Takahashi , Shinichi Isobe
IPC分类号： F16D27/112 , F04C29/00 , F16D27/06 , F04C18/02 , F16D27/00
CPC分类号： F16D27/112 , F04C18/0215 , F04C29/005 , F16D27/06 , F16D2027/008 , F16D2300/10 , Y10T29/4902
摘要： When grooves 44, 45A and 45B of an armature 42 and a rotor 43 are formed by laser beam machining, a metal oxide layer 100 is formed on wall surfaces defining the grooves 44, 45A and 45B. The metal oxide layer 100 is brought into sliding contact with a first contact surface A1 to a fourth contact surface A4 in a process in which an electromagnetic clutch is used, so that a part of the metal oxide layer 100 is ground and peeled off, whereby particles made of a metal oxide are produced. The particles enter the contact surface between the armature 42 and the rotor 43, which increases the frictional force therebetween to thereby prevent slippage. As a result, the torque transmission capability of the electromagnetic clutch M is enhanced, and the increase in the torque of a scroll compressor is achieved.
摘要翻译：当通过激光束加工形成电枢42和转子43的槽44,45A和45B时，在限定槽44,45A和45B的壁表面上形成金属氧化物层100。在使用电磁离合器的过程中，使金属氧化物层100与第一接触面A1滑动接触到第四接触面A4，使得金属氧化物层100的一部分被研磨剥离，由此制造由金属氧化物制成的颗粒。颗粒进入衔铁42和转子43之间的接触表面，这增加了它们之间的摩擦力，从而防止滑动。结果，提高了电磁离合器M的转矩传递能力，并且实现了涡旋式压缩机的转矩的增加。

9. 发明授权

US08717135B2 Electronic component and method of manufacturing the same 有权
标题翻译：电子部件及其制造方法
公开(公告)号：US08717135B2
公开(公告)日：2014-05-06
申请号：US13566836
申请日：2012-08-03
申请人： Koichiro Wada , Masashi Kuwahara , Yoshinari Nakada , Yuichi Kasuya , Masanori Takahashi , Tetsuo Kumahora
发明人： Koichiro Wada , Masashi Kuwahara , Yoshinari Nakada , Yuichi Kasuya , Masanori Takahashi , Tetsuo Kumahora
IPC分类号： H01F27/02 , H01F27/24
CPC分类号： H01F27/02 , H01F1/33 , H01F17/045 , H01F27/022 , H01F27/255 , H01F27/292 , Y10T29/49071
摘要： An electronic component has a drum-shaped core member constituted by an assembly of soft magnetic alloy grains containing iron (Fe), silicate (Si) and chromium (Cr), a coil conductive wire wound around the core member, a pair of terminal electrodes connected to ends of the coil conductive wire, and an outer sheath resin part covering the wound coil conductive wire and constituted by a magnetic powder-containing resin; wherein there is an area where only the resin material in the magnetic powder-containing resin is permeated from the surface of the core member to a specified depth.
摘要翻译：电子部件具有由铁（Fe），硅酸盐（Si）和铬（Cr）组成的软磁性合金晶粒组成的鼓形铁芯构件，缠绕在芯构件上的线圈导电线，一对端子电极连接到线圈导线的端部，以及覆盖卷绕的线圈导线并由含磁性粉末的树脂构成的外护套树脂部; 其中存在只有含磁粉的树脂中的树脂材料从芯构件的表面渗透到指定深度的区域。

10. 发明授权

US08710642B2 Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus 有权
标题翻译：半导体装置，半导体装置的制造方法以及电子装置
公开(公告)号：US08710642B2
公开(公告)日：2014-04-29
申请号：US13424586
申请日：2012-03-20
申请人： Masanori Takahashi
发明人： Masanori Takahashi
IPC分类号： H01L23/02 , H01L21/00
CPC分类号： H01L21/561 , H01L23/3128 , H01L23/49816 , H01L23/49833 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/105 , H01L25/50 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/73204 , H01L2224/73265 , H01L2224/97 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01029 , H01L2924/014 , H01L2924/15311 , H01L2924/15331 , H01L2924/15787 , H01L2924/181 , H01L2924/3511 , H05K1/144 , H05K3/284 , H01L2224/85 , H01L2924/00012 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor device includes a first wiring board, a first semiconductor element mounted on the first wiring board, a second wiring board disposed over the first semiconductor element, and a second semiconductor element mounted on the second wiring board. The wiring boards are electrically interconnected by a connecting portion interposed therebetween. A resin layer is formed between the wiring boards such that the first semiconductor element mounted on the first wiring board is sealed and such that the wiring boards having the respective semiconductor elements mounted thereon are bonded together.
摘要翻译：半导体器件包括第一布线板，安装在第一布线板上的第一半导体元件，设置在第一半导体元件上的第二布线板以及安装在第二布线板上的第二半导体元件。布线板通过插入其间的连接部分电互连。在布线板之间形成树脂层，使得安装在第一布线板上的第一半导体元件被密封，并且将其上安装有各个半导体元件的布线板接合在一起。

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