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    • 2. 发明授权
    • Apparatus and method for controlling address conversion buffer
    • 用于控制地址转换缓冲器的装置和方法
    • US07380097B2
    • 2008-05-27
    • US10986041
    • 2004-11-12
    • Masanori DoiIwao Yamazaki
    • Masanori DoiIwao Yamazaki
    • G06F12/10
    • G06F12/1027
    • A method for controlling an address conversion buffer, constituted on a processor capable of executing a plurality of threads simultaneously on one core, includes registering address conversion information in an entry of the address conversion buffer that includes a first memory area usable by one of the threads and a second memory area shared among all the threads, allocating a part of the second memory area as a swap area of the first memory area, and transferring data in the swap area to the first memory area, based on thread switching executed by the processor.
    • 一种用于控制地址转换缓冲器的方法,该处理器能够在一个核心上同时执行多个线程的处理器上,包括在地址转换缓冲器的条目中注册地址转换信息,该条目包括由一个线程可用的第一存储区域 以及在所有线程之间共享的第二存储器区域,将所述第二存储器区域的一部分分配为所述第一存储区域的交换区域,并且基于由所述处理器执行的线程切换将所述交换区域中的数据传送到所述第一存储器区域 。
    • 3. 发明申请
    • Apparatus and method for controlling address conversion buffer
    • 用于控制地址转换缓冲器的装置和方法
    • US20060026380A1
    • 2006-02-02
    • US10986041
    • 2004-11-12
    • Masanori DoiIwao Yamazaki
    • Masanori DoiIwao Yamazaki
    • G06F12/10
    • G06F12/1027
    • A method for controlling an address conversion buffer, constituted on a processor capable of executing a plurality of threads simultaneously on one core, includes registering address conversion information in an entry of the address conversion buffer that includes a first memory area usable by one of the threads and a second memory area shared among all the threads, allocating a part of the second memory area as a swap area of the first memory area, and transferring data in the swap area to the first memory area, based on thread switching executed by the processor.
    • 一种用于控制地址转换缓冲器的方法,该处理器能够在一个核心上同时执行多个线程的处理器上,包括在地址转换缓冲器的条目中注册地址转换信息,该条目包括可由一个线程使用的第一存储区域 以及在所有线程之间共享的第二存储器区域,将所述第二存储器区域的一部分分配为所述第一存储区域的交换区域,并且基于由所述处理器执行的线程切换将所述交换区域中的数据传送到所述第一存储区域 。
    • 5. 发明申请
    • LASER TREATMENT DEVICE
    • 激光治疗装置
    • US20120296322A1
    • 2012-11-22
    • US13521962
    • 2011-03-10
    • Iwao YamazakiAkitsugu Yamazaki
    • Iwao YamazakiAkitsugu Yamazaki
    • A61B18/20
    • A61B18/203A61B2017/00057A61B2018/00452A61B2018/00636A61B2018/00702A61B2018/00785A61B2018/208
    • [Problem to be Solved] It cannot be said that the irradiation range of laser light is sufficiently wide, a lot of labor is taken to irradiate the skin with laser light, and there has been a problem that efficiency of cosmetic treatment is bad.[Solution] A laser treatment device is provided with a laser light source 40 consisting of at least one or more VCSEL array 41 that has two or more VCSEL elements 41s arranged on a single wafer and emits laser light for irradiating the skin. The laser treatment device may also be provided with: a reflected-light power detection means that detects power of reflected light of the light irradiating an irradiation part, the reflected light reflected from the irradiation part; and a control means that adjusts, in accordance with the power of the reflected light detected by the reflected-light power detection means, power of the laser light emitted from the light source means.
    • [待解决的问题]不能说激光的照射范围足够宽,用激光照射皮肤大量劳动,并且存在化妆品处理效率差的问题。 [解决方案]激光治疗装置设置有由至少一个或多个VCSEL阵列41组成的激光源40,所述VCSEL阵列41具有布置在单个晶片上的两个或更多个VCSEL元件41s,并且发射用于照射皮肤的激光。 激光治疗装置还可以设置有:反射光功率检测装置,其检测照射部分的光的反射光的功率,从照射部反射的反射光; 以及控制装置,其根据由反射光功率检测装置检测的反射光的功率调整从光源装置发射的激光的功率。
    • 6. 发明申请
    • Cache unit, arithmetic processing unit, and information processing unit
    • 高速缓存单元,算术处理单元和信息处理单元
    • US20110161593A1
    • 2011-06-30
    • US12929026
    • 2010-12-22
    • Iwao Yamazaki
    • Iwao Yamazaki
    • G06F12/08
    • G06F12/0895G06F2212/1028Y02D10/13
    • A cache unit comprising a register file that selects an entry indicated by a cache index of n bits (n is a natural number) that is used to search for an instruction cache tag, using multiplexer groups having n stages respectively corresponding to the n bits of the cache index. Among the multiplexer groups having n stages, a multiplexer group in an mth stage has 2(m-1) multiplex circuits. The multiplexer group in the mth stage uses a value of an mth bit (m is a natural number equal to or less than n) from the least significant bit in the cache index as a control signal. The multiplexer group in the mth stage switches all multiplex circuits included in the multiplexer group in the mth stage in accordance with the control signal.
    • 一种高速缓存单元,包括一个寄存器文件,该寄存器文件选择由用于搜索指令高速缓存标签的n位(n是自然数)的高速缓存索引指示的条目,使用具有分别对应于n个 缓存索引。 在具有n级的多路复用器组中,第m级的复用器组具有2(m-1)个复用电路。 第m级中的多路复用器组作为控制信号使用来自高速缓存索引中的最低有效位的第m位(m为等于或小于n的自然数)的值。 第m级的复用器组根据控制信号切换第m级中的复用器组中包括的所有多路复用电路。
    • 7. 发明申请
    • Electrode for treatment and device for treatment
    • 用于治疗的电极和治疗装置
    • US20070173906A1
    • 2007-07-26
    • US10587865
    • 2005-01-28
    • Iwao Yamazaki
    • Iwao Yamazaki
    • A61N1/36
    • A61N1/0452A61N1/0484A61N1/0492A61N1/08A61N1/32
    • A metal backer forming device (1), comprising a film withdrawing roller (2) for withdrawing, starting at one end, a transfer film (F) from the wound body of the transfer film (F) formed by applying at least a metal film (26a) onto a base film (26b), a film carrying mechanism such as a turn roller (9) for carrying the transfer film (F) withdrawn from the wound body to the downstream side, a transfer roller (12) for transferring the metal film (26a) by heating while pressing the carried transfer film (F) against a phosphor screen (22) installed on a face plate (27), and a film winding roller (18) for winding while releasing the base film (26b) from the transfer film (F) which completes transfer treatment.
    • 一种金属支撑件形成装置(1),包括一个退色辊(2),用于从一端开始从转印膜(F)的卷绕体开始转印膜(F),所述转印膜(F)至少通过涂覆金属膜 (26a)到基膜(26b)上,用于承载从卷绕体退出到下游侧的转印膜(F)的转膜辊(9)的膜承载机构,用于 在将所携带的转印膜(F)压靠在安装在面板(27)上的荧光屏(22)上的同时通过加热转印金属膜(26a);以及胶片卷绕辊(18),用于在释放基膜 (26b)从转印膜(F)完成转印处理。
    • 8. 发明授权
    • Ultrasonic beauty treatment probe
    • 超声波美容治疗探头
    • US07195603B2
    • 2007-03-27
    • US10490025
    • 2001-09-21
    • Iwao YamazakiYoshihiro Izawa
    • Iwao YamazakiYoshihiro Izawa
    • A61H1/00
    • A61H23/0245A61H2201/1604A61H2201/1685A61H2205/022Y10S601/15
    • A supersonic beauty treatment device capable of effecting a beauty treatment for the skin and of slimming a selected portion of the body. A face beauty treatment head and body beauty treatment head are prepared, and either one is selectivley attached to the casing of the device. The casing has a tepped receptacle made on its front. Each head has a plug projecting from its base. The plug has threads fromed on its outer circumference. Thus, the head can be attached to the casing by screwing the plug in the receptacle, and two sets of switch contacts are formed on both sides of the center of the insulating bottoem of the receptacle. The electrically conductive inner circumference wall of the receptacle is grounded. The plug has a contact formed at its center, corresponding to the center contact of the receptacle. The plug has an electricaly conductive key formed on its base, corresponding to the set of switch contacts whereas the plug has an electronically conductive key formed on its base, corresponding to the set of switch contacts. Each plug has its sides grounded.
    • 一种超音速美容治疗装置,其能够对皮肤进行美容治疗,并减轻身体的选定部分。 准备面部美容护理头部和身体美容治疗头,任一个是选择性连接到设备的外壳。 外壳有一个在其前面制成的一个Tepped插座。 每个头部具有从其基部突出的插头。 插头的外圆上有螺纹。 因此,头部可以通过将插头拧入插座中而附接到壳体,并且在插座的绝缘植物的中心的两侧形成两组开关触点。 插座的导电内周壁接地。 插塞具有形成在其中心的接触件,其对应于容器的中心接触。 插头具有形成在其基座上的导电键,对应于该组开关触点,而插头具有形成在其底座上的电子导电键,对应于该组开关触点。 每个插头的侧面都接地。
    • 9. 发明授权
    • Laser light irradiator
    • 激光照射器
    • US07123636B2
    • 2006-10-17
    • US10491000
    • 2002-09-11
    • Iwao YamazakiKimiyo Yamazaki
    • Iwao YamazakiKimiyo Yamazaki
    • H01S3/00A61N5/06
    • A61N5/0616A61B18/203A61B2017/00181A61B2018/00452A61B2090/065A61N2005/0644A61N2005/0651A61N2005/067
    • A laser beam irradiation device according to the present invention is so constructed that it may increase or decrease the excitation electric current flowing through its semiconductor laser diode to enable a user to selectively practice both non-thermal and photo-thermal laser treatments.CPU 41 is responsive to switching-on and -off of an output-power switching unit S2 for sending a reference signal to an amplifier 472 via an I/O port 44 and a D/A converter 471, so that the amplifier 472 may provide at its output terminals a reference voltage, with respect to which a control reference voltage for a desired laser output can be determined.Semiconductor laser diode 35 radiates the laser beam from its opposite sides, and a photo-diode 473 receives one of the opposite laser beams to provide a light-accepting voltage at its output terminals. The so acquired light-accepting voltage is directed to an amplifier 474 for amplification, thereby obtaining the monitor voltage.The reference voltage and the monitor voltage are applied to a differential amplifier 475, and a differential voltage is amplified by an amplifier 476. Thus a controlled working electric current is made to flow in semiconductor laser diode 35 so that it may be energized and oscillated at the set output level.
    • 根据本发明的激光束照射装置的结构使得其可以增加或减少流过其半导体激光二极管的激励电流,以使用户能够选择性地进行非热和光热激光处理。 CPU41响应于输出功率切换单元S2的接通和断开,用于经由I / O端口44和D / A转换器471将参考信号发送到放大器472,使得放大器472可以 在其输出端提供参考电压,相对于其可以确定所需激光输出的控制参考电压。 半导体激光二极管35从其相对侧辐射激光束,光电二极管473接收相对的激光束之一,以在其输出端提供受光电压。 所获得的受光电压被引导到用于放大的放大器474,从而获得监视电压。 参考电压和监视电压被施加到差分放大器475,并且差分电压由放大器476放大。 因此,控制工作电流在半导体激光二极管35中流动,使得其可以在设定的输出电平被激励和振荡。