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1. 发明授权

US6080998A Amorphous silicon germanium thin film and photovoltaic element 失效
标题翻译：非晶硅锗薄膜和光电元件
公开(公告)号：US6080998A
公开(公告)日：2000-06-27
申请号：US30691
申请日：1998-02-25
申请人： Masaki Shima , Toshihiro Kinoshita , Masao Isomura
发明人： Masaki Shima , Toshihiro Kinoshita , Masao Isomura
IPC分类号： H01L21/205 , H01L29/16 , H01L31/0376 , H01L31/04 , H01L31/075 , H01L31/20 , H01L29/04
CPC分类号： H01L31/076 , H01L29/1604 , H01L31/03765 , H01L31/075 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： An amorphous silicon germanium thin film is disclosed which contains hydrogen and germanium in concentrations of 5-10 atomic percent and 40-55 atomic percent, respectively for exhibiting the optical gap in the range of 1.30-1.40 eV. Also disclosed is a photovoltaic element incorporating the amorphous silicon germanium thin film.
摘要翻译：公开了一种非晶硅锗薄膜，其分别含有浓度为5-10原子％和40-55原子％的氢和锗，以表现出1.30-1.40eV范围内的光学间隙。还公开了并入有非晶硅锗薄膜的光电元件。

2. 发明授权

US08383927B2 Stacked photovoltaic device and method of manufacturing the same 有权
标题翻译：堆叠式光伏器件及其制造方法
公开(公告)号：US08383927B2
公开(公告)日：2013-02-26
申请号：US13300369
申请日：2011-11-18
申请人： Masaki Shima , Kunimoto Ninomiya
发明人： Masaki Shima , Kunimoto Ninomiya
IPC分类号： H01L31/042
CPC分类号： H01L31/042 , H01L31/0687 , H01L31/076 , H01L31/1876 , Y02E10/544 , Y02E10/548 , Y02P70/521
摘要： A back metal electrode, a bottom cell using microcrystalline silicon for a photoelectric conversion layer, a front cell using amorphous silicon for a photoelectric conversion layer, and a transparent front electrode are formed in this order on a supporting substrate. At least one of the concentration of impurities contained in the front photoelectric conversion layer and the concentration of impurities contained in the bottom photoelectric conversion layer is controlled such that the concentration of impurities in the bottom photoelectric conversion layer is higher than the concentration of impurities in the front photoelectric conversion layer. Impurities do not include a p-type dopant or an n-type dopant but are any one, two, or all of carbon, nitrogen, and oxygen.
摘要翻译：背面金属电极，使用微晶硅用于光电转换层的底部单元，使用非晶硅用于光电转换层的前单元和透明前电极依次形成在支撑基板上。控制前光电转换层中含有的杂质浓度和底部光电转换层中所含的杂质浓度中的至少一种，使得底部光电转换层中的杂质浓度高于底部光电转换层中的杂质浓度前光电转换层。杂质不包括p型掺杂剂或n型掺杂剂，而是碳，氮和氧中的任何一种，两种或全部。

3. 发明授权

US07410728B1 Electrode for lithium batteries and rechargeable lithium battery 有权
标题翻译：锂电池和可充电锂电池用电极
公开(公告)号：US07410728B1
公开(公告)日：2008-08-12
申请号：US10111073
申请日：2000-10-20
申请人： Masahisa Fujimoto , Shin Fujitani , Masaki Shima , Hiromasa Yagi , Hisaki Tarui , Hiroshi Kurokawa , Shigeki Matsuta , Yoichi Domoto , Yoshio Kato , Hiroshi Nakajima , Hiroaki Ikeda , Kenji Asaoka , Ryuji Ohshita
发明人： Masahisa Fujimoto , Shin Fujitani , Masaki Shima , Hiromasa Yagi , Hisaki Tarui , Hiroshi Kurokawa , Shigeki Matsuta , Yoichi Domoto , Yoshio Kato , Hiroshi Nakajima , Hiroaki Ikeda , Kenji Asaoka , Ryuji Ohshita
IPC分类号： H01M4/66 , H01M4/58
CPC分类号： H01M4/661 , H01M4/131 , H01M4/1395 , H01M4/366 , H01M4/38 , H01M4/386 , H01M4/40 , H01M4/405 , H01M4/525 , H01M4/58 , H01M4/667 , H01M4/70 , H01M6/40 , H01M10/052 , H01M10/0587 , H01M10/44 , H01M2004/021 , H01M2010/4292
摘要： An electrode for lithium batteries, in which a thin film of active material capable of storage and release of lithium, such as a microcrystalline or amorphous silicon thin film, is provided, through an interlayer, on a current collector, the electrode being characterized in that the interlayer comprises a material alloyable with the thin film of active material.
摘要翻译：一种用于锂电池的电极，其中通过中间层，在集电器上提供能够储存和释放锂的活性材料的薄膜，例如微晶或非晶硅薄膜，所述电极的特征在于：中间层包括可与活性材料薄膜合金化的材料。

4. 发明申请

US20060209915A1 Photovoltaic device 审中-公开
标题翻译：光伏装置
公开(公告)号：US20060209915A1
公开(公告)日：2006-09-21
申请号：US11350899
申请日：2006-02-10
申请人： Masaki Shima
发明人： Masaki Shima
IPC分类号： H01S5/00
CPC分类号： H01L31/03921 , H01L31/02363 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： An aspect of the present invention provides a photovoltaic device having a first semiconductor layer of a first conduction type and a third semiconductor layer of a second conductivity type. At least one of the first and third semiconductor layers includes an amorphous semiconductor layer. The amorphous semiconductor layer has a larger band gap than a non-monocrystal semiconductor layer having crystallinity. Accordingly, it is possible to increase a built-in electric field that is a potential difference between the Fermi level of the first semiconductor layer of the first conductivity type and the Fermi level of the third semiconductor layer of the second conductivity type.
摘要翻译：本发明的一个方面提供一种具有第一导电类型的第一半导体层和第二导电类型的第三半导体层的光伏器件。第一和第三半导体层中的至少一个包括非晶半导体层。非晶半导体层具有比具有结晶性的非单晶半导体层更大的带隙。因此，可以增加作为第一导电类型的第一半导体层的费米能级与第二导电类型的第三半导体层的费米能级之间的电位差的内置电场。

5. 发明授权

US07075052B2 Photoelectric conversion device 失效
标题翻译：光电转换装置
公开(公告)号：US07075052B2
公开(公告)日：2006-07-11
申请号：US10663663
申请日：2003-09-17
申请人： Masaki Shima , Shigeharu Taira
发明人： Masaki Shima , Shigeharu Taira
IPC分类号： H01L31/00 , H01L31/036
CPC分类号： H01L31/03682 , H01L31/075 , Y02E10/546 , Y02E10/548
摘要： A photoelectric conversion device capable of improving an open-circuit voltage is obtained. In this photoelectric conversion device, many of crystal grains contained in a third non-single-crystalline semiconductor layer have major axes substantially perpendicular to a main surface of a substrate on an interfacial portion between at least either a first non-single-crystalline semiconductor layer or a second non-single-crystalline semiconductor layer and the third non-single-crystalline semiconductor layer, and many of crystal grains contained in either semiconductor layer have major axes substantially parallel to the main surface of the substrate on the aforementioned interfacial portion.
摘要翻译：获得能够提高开路电压的光电转换装置。在该光电转换装置中，包含在第三非单晶半导体层中的许多晶粒在至少第一非单晶半导体层之间的界面部分上具有大致垂直于衬底主表面的长轴或第二非单晶半导体层和第三非单晶半导体层，并且包含在任一半导体层中的许多晶粒具有基本上平行于上述界面部分上的基板的主表面的长轴。

6. 发明授权

US5935344A Photovoltaic element and manufacturing method thereof 失效
标题翻译：光伏元件及其制造方法
公开(公告)号：US5935344A
公开(公告)日：1999-08-10
申请号：US736418
申请日：1996-10-24
申请人： Koji Endo , Masaki Shima
发明人： Koji Endo , Masaki Shima
IPC分类号： H01L31/04 , H01L31/072 , H01L31/075 , H01L31/20 , H01L31/00
CPC分类号： H01L31/202 , H01L31/035281 , H01L31/0747 , Y02E10/547 , Y02P70/521
摘要： A photovoltaic element having improved conversion efficiency and improved light confining property as well as a method of manufacturing the photovoltaic element with superior productivity are provided. The photovoltaic element includes an n type single crystal silicon substrate having first and second main surfaces, an intrinsic amorphous silicon layer formed on the first main surface, a p type amorphous silicon layer formed thereon, a conductive thin film formed thereon, a collecting electrode formed thereon, an intrinsic amorphous silicon layer formed on the second main surface of n type single crystal silicon substrate, an n type amorphous silicon layer formed thereon, a conductive thin film formed thereon and a back electrode formed thereon. At a peripheral portion of a laminated portion including the intrinsic amorphous silicon layer formed on the first main surface of the n type single crystal silicon substrate, the p type amorphous silicon layer and the conductive thin film, a trench deep enough to reach at least the intrinsic amorphous semiconductor layer is formed.
摘要翻译：提供了具有改善的转换效率和改善的光限制性的光电元件以及制造具有优异生产率的光电元件的方法。光电元件包括具有第一和第二主表面的n型单晶硅衬底，形成在第一主表面上的本征非晶硅层，形成在其上的ap型非晶硅层，形成在其上的导电薄膜，在其上形成的集电极形成在n型单晶硅衬底的第二主表面上的本征非晶硅层，在其上形成的n型非晶硅层，形成在其上的导电薄膜和形成在其上的背电极。在形成在n型单晶硅衬底的第一主表面上的本征非晶硅层的层压部分的周边部分，p型非晶硅层和导电薄膜，深度足以达到至少形成本征非晶半导体层。

7. 发明授权

US08124867B2 Stacked photovoltaic device and method of manufacturing the same 有权
标题翻译：堆叠式光伏器件及其制造方法
公开(公告)号：US08124867B2
公开(公告)日：2012-02-28
申请号：US12836342
申请日：2010-07-14
申请人： Masaki Shima , Kunimoto Ninomiya
发明人： Masaki Shima , Kunimoto Ninomiya
IPC分类号： H01L31/05 , H01L31/18
CPC分类号： H01L31/042 , H01L31/0687 , H01L31/076 , H01L31/1876 , Y02E10/544 , Y02E10/548 , Y02P70/521
摘要： A back metal electrode, a bottom cell using microcrystalline silicon for a photoelectric conversion layer, a front cell using amorphous silicon for a photoelectric conversion layer, and a transparent front electrode are formed in this order on a supporting substrate. At least one of the concentration of impurities contained in the front photoelectric conversion layer and the concentration of impurities contained in the bottom photoelectric conversion layer is controlled such that the concentration of impurities in the bottom photoelectric conversion layer is higher than the concentration of impurities in the front photoelectric conversion layer. Impurities do not include a p-type dopant or an n-type dopant but are any one, two, or all of carbon, nitrogen, and oxygen.
摘要翻译：背面金属电极，使用微晶硅用于光电转换层的底部单元，使用非晶硅用于光电转换层的前单元和透明前电极依次形成在支撑基板上。控制前光电转换层中含有的杂质浓度和底部光电转换层中所含的杂质浓度中的至少一种，使得底部光电转换层中的杂质浓度高于底部光电转换层中的杂质浓度前光电转换层。杂质不包括p型掺杂剂或n型掺杂剂，而是碳，氮和氧中的任何一种，两种或全部。

8. 发明申请

US20080230115A1 METHOD FOR FRACTURING SEMICONDUCTOR SUBSTRATE, METHOD FOR FRACTURING SOLAR CELL, AND THE SOLAR CELL 有权
标题翻译：破碎半导体基板的方法，用于破碎太阳能电池的方法和太阳能电池
公开(公告)号：US20080230115A1
公开(公告)日：2008-09-25
申请号：US12046534
申请日：2008-03-12
申请人： Hiroyuki Kannou , Masaki Shima
发明人： Hiroyuki Kannou , Masaki Shima
IPC分类号： H01L31/04 , H01L21/78 , H01L31/18
CPC分类号： H01L31/1804 , B28D5/0011 , H01L31/0352 , H01L31/18
摘要： In accordance with the present invention, the dividing grooves 8 are formed so as not to be parallel to cleavage planes of the semiconductor substrate 1, and the semiconductor substrate 1 is bent along the dividing grooves 8, whereby the semiconductor substrate 1 is fractured along the dividing grooves 8.
摘要翻译：根据本发明，分隔槽8形成为不与半导体衬底1的解理面平行，并且半导体衬底1沿着分隔槽8弯曲，由此半导体衬底1沿着分隔槽8。

9. 发明授权

US07241533B1 Electrode for rechargeable lithium battery and rechargeable lithium battery 失效
标题翻译：可充电锂电池和可充电锂电池电极
公开(公告)号：US07241533B1
公开(公告)日：2007-07-10
申请号：US10111075
申请日：2000-10-20
申请人： Hiroaki Ikeda , Masahisa Fujimoto , Shin Fujitani , Kenji Asaoka , Shigeki Matsuta , Yoichi Domoto , Ryuji Ohshita , Masaki Shima , Hiromasa Yagi , Hisaki Tarui , Hiroshi Kurokawa , Yoshio Kato , Hiroshi Nakajima , Toshikazu Yoshida
发明人： Hiroaki Ikeda , Masahisa Fujimoto , Shin Fujitani , Kenji Asaoka , Shigeki Matsuta , Yoichi Domoto , Ryuji Ohshita , Masaki Shima , Hiromasa Yagi , Hisaki Tarui , Hiroshi Kurokawa , Yoshio Kato , Hiroshi Nakajima , Toshikazu Yoshida
IPC分类号： H01M4/70 , H01M4/36
CPC分类号： H01M4/661 , H01M2/0207 , H01M4/04 , H01M4/131 , H01M4/134 , H01M4/1395 , H01M4/366 , H01M4/38 , H01M4/386 , H01M4/40 , H01M4/405 , H01M4/485 , H01M4/525 , H01M4/58 , H01M4/667 , H01M4/70 , H01M6/40 , H01M10/052 , H01M10/0587 , H01M10/44 , H01M2010/4292
摘要： An electrode for a rechargeable lithium battery characterized in that thin films of active material capable of lithium storage and release, i.e., microcrystalline or amorphous silicone thin films are deposited on opposite faces of a plate-form current collector.
摘要翻译：一种用于可再充电锂电池的电极，其特征在于，在板形集电器的相对面上沉积能够储存和释放锂的活性材料的薄膜，即微晶或非晶硅薄膜。

10. 发明申请

US20070000538A1 Stacked photovoltaic device 审中-公开
标题翻译：堆叠式光伏器件
公开(公告)号：US20070000538A1
公开(公告)日：2007-01-04
申请号：US11447263
申请日：2006-06-06
申请人： Masaki Shima
发明人： Masaki Shima
IPC分类号： H01L31/00
CPC分类号： H01L31/0725 , H01L31/03685 , H01L31/076 , Y02E10/545 , Y02E10/548
摘要： A stacked photovoltaic device which includes a first photovoltaic unit having an amorphous silicon layer 8 as a photoelectric conversion layer, and a second photovoltaic unit having a microcrystalline silicon layer 5 as a photo-electric conversion layer and succeeding backwardly from the first photovoltaic unit closer to a light incidence plane. The microcrystalline silicon layer 5 serving as the photoelectric conversion layer in the second photovoltaic unit has a ratio α2(=I(Si—O)/I(Si—H)) greater than a ratio α1(=I(Si—O)/I(Si—H)) of the amorphous silicon layer 8 serving as the photoelectric conversion layer in the first photovoltaic unit, where I(Si—O) is a peak area for the Si—O stretching mode of each silicon layer and I(Si—H) is a peak area for the Si—H stretching mode of each silicon layer when the amorphous and microcrystalline silicon layers 8 and 5 are measured by infrared absorption spectroscopy. Also, a short-circuit current Isc2 of the second photovoltaic unit is greater than a short-circuit current Isc1 of the first photovoltaic unit.
摘要翻译：一种堆叠的光伏器件，其包括具有作为光电转换层的非晶硅层8的第一光伏单元和具有微晶硅层5作为光电转换层的第二光伏单元，并且从第一光电单元的后面向后延伸，光入射平面。在第二光伏单元中用作光电转换层的微晶硅层5具有比α<2>（= I（Si-O）/ I（Si-H）在第一光电单元中用作光电转换层的非晶硅层8的I 1（Si-O）/ I（Si-H）），其中I（Si-O）每个硅层的Si-O拉伸模式的峰面积和I（Si-H）是当通过红外吸收测量非晶硅和微晶硅层8和5时每个硅层的Si-H拉伸模式的峰面积光谱学。此外，第二光伏单元的短路电流I SC2 <2>大于第一光伏单元的短路电流Isc1> 1 _1。

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