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    • 4. 发明授权
    • Polybutadiene rubber composition
    • 聚丁二烯橡胶组合物
    • US4255296A
    • 1981-03-10
    • US964310
    • 1978-11-28
    • Masaki OgawaTamio Araki
    • Masaki OgawaTamio Araki
    • C08L9/00C08L21/00C08L25/10C08L89/00C08F136/06
    • C08L21/00C08L25/10C08L7/00C08L9/00C08K3/04C08K7/02C08L51/04C08L53/00C08L9/06
    • This invention relates to a composition comprising a polybutadiene rubber containing a polymer obtained by block or graft polymerization of cis-1,4-polybutadiene with syndiotactic (syn)-1,2-polybutadiene, alone or blended with the other diene rubber, said syn-1,2-polybutadiene being crystallized and in a short fiber-like shape, and a breaking resistance characteristic and reinforcement characteristic being considerably improved by specifying the diameter and length of said short fiber, which is suitable for various parts of tire or industrial materials, and further relates to a composition of said polybutadiene rubber to which a carbon black is added for preferably used as a chafer or tread of tire, and still further relates to said composition to which a carbon black and an antioxidant are added for preferably used as a rubber blend composition for side wall.
    • 本发明涉及包含聚丁二烯橡胶的组合物,该聚丁二烯橡胶含有单独或与其它二烯橡胶共混的顺式-1,4-聚丁二烯与间同立构(顺式)-1,2-聚丁二烯嵌段或接枝聚合得到的聚合物,所述顺式 -1,2-聚丁二烯结晶并处于短纤维状,通过规定所述短纤维的直径和长度,可以明显改善耐断裂特性和强化特性,适用于轮胎或工业材料的各种部件 进一步涉及添加有炭黑的聚丁二烯橡胶的组合物,优选用作轮胎的胎圈包布或胎面,还涉及添加了炭黑和抗氧化剂的组合物,优选用作 用于侧壁的橡胶混合物组合物。
    • 7. 发明授权
    • Heterojunction transistor having bipolar characteristics
    • 具有双极特性的异质结晶体管
    • US4903091A
    • 1990-02-20
    • US197485
    • 1988-05-23
    • Toshio BabaMasaki OgawaKeiichi Ohata
    • Toshio BabaMasaki OgawaKeiichi Ohata
    • H01L29/10H01L29/43H01L29/778
    • H01L29/1066H01L29/10H01L29/432H01L29/7787
    • A heterojunction transistor has a first semiconductor layer of a semi-insulating or a low impurity concentration, a second semiconductor layer formed on the first semiconductor layer and made of such a semiconductor material that, in cooperation with the first semiconductor layer, a first energy recess for electrons and a second energy recess for holes are respectively formed at the bottom of the conduction band and at the top of the valence band to constitute a conductive channel, a third semiconductor layer formed on the second semiconductor layer and forming a PN-junction with the upper surface of the second semiconductor layer to inject carriers into the conductive channel, a control electrode for applying an input signal to the third semiconductor layer, and a ground and an output electrode formed on the second semiconductor layer on the opposite sides of the third semiconductor layer.
    • 异质结晶体管具有半绝缘或低杂质浓度的第一半导体层,形成在第一半导体层上并由这种半导体材料制成的第二半导体层,第二半导体层与第一半导体层协作,形成第一能量凹槽 对于电子和用于空穴的第二能量凹槽分别形成在导带的底部和价带的顶部以构成导电通道;第三半导体层,形成在第二半导体层上并形成具有 所述第二半导体层的上表面将载流子注入到所述导电通道中,用于向所述第三半导体层施加输入信号的控制电极,以及形成在所述第三半导体层的相对侧上的所述第二半导体层上的接地和输出电极 半导体层。