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1. 发明授权

US4804410A Palladium-base electroless plating solution 失效
标题翻译：钯基化学镀溶液
公开(公告)号：US4804410A
公开(公告)日：1989-02-14
申请号：US128111
申请日：1987-10-21
申请人： Masaki Haga , Kiyotaka Tsuji , Hidemi Nawafune , Shozo Mizumoto , Ei Uchida
发明人： Masaki Haga , Kiyotaka Tsuji , Hidemi Nawafune , Shozo Mizumoto , Ei Uchida
IPC分类号： C23C18/44 , H05K3/24 , C09D5/38 , B22F7/00 , C09D5/00
CPC分类号： C23C18/44 , H05K3/244
摘要： The present invention provides a palladium-base electroless plating solution which is excellent in stability and which is capable of forming a satisfactory palladium-base deposit, the solution being an aqueous solution containing (a) a palladium compound, (b) at least one compound of ammonia and amine compounds, (c) an organic compound containing bivalent sulfur, and (d) at least one compound of hypophosphorous acid compounds and boron hydride compounds, and a palladium-base electroless plating solution containing a nickel compound in addition to said electroless plating solution.
摘要翻译： PCT No.PCT / JP87 / 00113 Sec。 371日期：1987年10月21日 102（e）1987年10月21日日期PCT提交1987年2月21日PCT公布。公开号WO87 / 05338 日本公报1987年9月11日。本发明提供一种钯 - 基化学镀溶液，其稳定性优异，能够形成令人满意的钯 - 基沉积物，该溶液为含有（a）钯化合物的水溶液，（b）至少一种氨和胺化合物的化合物，（c）含有二价硫的有机化合物，和（d）至少一种次磷酸化合物和硼氢化合物的化合物，以及钯基化学镀溶液，镍化合物除了所述化学镀溶液之外。

2. 发明授权

US07628903B1 Silver and silver alloy plating bath 有权
标题翻译：银和银合金电镀浴
公开(公告)号：US07628903B1
公开(公告)日：2009-12-08
申请号：US09563479
申请日：2000-05-02
申请人： Kiyotaka Tsuji , Tetsuji Nishikawa , Takao Takeuchi , Keigo Obata , Hidemi Nawafune
发明人： Kiyotaka Tsuji , Tetsuji Nishikawa , Takao Takeuchi , Keigo Obata , Hidemi Nawafune
IPC分类号： C25D3/46 , C23C18/31
CPC分类号： C25D3/46 , C25D3/64
摘要： A silver and silver alloy plating bath, includes (A) a soluble salt, having a silver salt or a mixture of a silver salt and a salt of a metal such as tin, bismuth, indium, lead, and the like; and (B) a particular aliphatic sulfide compound, such as thiobis(diethyleneglycol), dithiobis(triglycerol), 3,3′-thiodipropanol, thiodiglycerin, 3,6-dithiooctane-1,8-diol, and the like, which contain at least one or more of an ether oxygen atom, a 1-hydroxypropyl group, a hydroxypropylene group, or two or more of a sulfide bond in the molecule, and not containing a basic nitrogen atom. Compared to baths containing aliphatic monosulfide compounds, such as thiodiglycol or beta-thiodiglycol, which do not contain an ether oxygen atom, 1-hydroxypropyl group, a hydroxypropylene group, or two or more of a sulfide bond in the molecule, by having these particular compounds, the plating bath of the present invention has excellent stability over extended time, excellent co-deposition of silver and various metals, and excellent appearance of the electrodeposition coating.
摘要翻译：银和银合金电镀浴包括（A）可溶性盐，其具有银盐或银盐和金属如锡，铋，铟，铅等的盐的混合物; 和（B）特定的脂族硫醚化合物，例如硫代双（二甘醇），二硫代双（三甘油），3,3'-硫代二丙醇，硫二甘油，3,6-二硫辛烷-1,8-二醇等，至少一个或多个醚氧原子，1-羟丙基，羟基亚丙基，或分子中的硫原子键中的两个或多个，并且不含碱性氮原子。与分子中含有不含醚氧原子，1-羟丙基，羟基亚丙基或两个或多个硫键的脂族单硫醚化合物如硫二甘醇或β-硫二甘醇相比，具有这些特定化合物，本发明的电镀浴在延长的时间内具有优异的稳定性，优异的银和各种金属的共沉积，以及优异的电沉积外观。

3. 发明授权

US06607653B1 Plating bath and process for depositing alloy containing tin and copper 有权
标题翻译：电镀浴和沉积含锡和铜合金的工艺
公开(公告)号：US06607653B1
公开(公告)日：2003-08-19
申请号：US09667715
申请日：2000-09-22
申请人： Kiyotaka Tsuji , Keigo Obata , Takao Takeuchi , Hidemi Nawafune , Tetsuji Nishikawa
发明人： Kiyotaka Tsuji , Keigo Obata , Takao Takeuchi , Hidemi Nawafune , Tetsuji Nishikawa
IPC分类号： C25D358
CPC分类号： C25D3/60
摘要： The present invention provides a tin-copper alloy plating bath, tin-copper-bismuth alloy plating bath or tin-copper-silver alloy plating bath containing a soluble metal compound and a specific sulfur-containing compound. The plating bath of the present invention is an alloy plating bath containing tin and copper, the bath being capable of preventing deposition of copper on a tin anode by substitution, having low dependence of plated coating composition on current density, high bath stability and resistance to turbidness.
摘要翻译：本发明提供了含有可溶性金属化合物和特定含硫化合物的锡 - 铜合金电镀浴，锡 - 铜 - 铋合金电镀浴或锡 - 铜 - 银合金电镀浴。本发明的电镀液是含有锡和铜的合金电镀液，该浴能够防止铜在锡阳极上的沉积而被置换，镀层组合物对电流密度的依赖性低，浴的稳定性和耐浑浊

4. 发明授权

US07938948B2 Silver and silver alloy plating bath 有权
标题翻译：银和银合金电镀浴
公开(公告)号：US07938948B2
公开(公告)日：2011-05-10
申请号：US12553731
申请日：2009-09-03
申请人： Kiyotaka Tsuji , Tetsuji Nishikawa , Takao Takeuchi , Keigo Obata , Hidemi Nawafune
发明人： Kiyotaka Tsuji , Tetsuji Nishikawa , Takao Takeuchi , Keigo Obata , Hidemi Nawafune
IPC分类号： C25D3/46 , C25D3/64 , C23C18/31
CPC分类号： C25D3/46 , C25D3/64
摘要： To develop stable, non-cyanide silver and silver alloy plating baths. The present invention is a silver and silver alloy plating bath, comprises: (A) a soluble salt, comprising a silver salt or a mixture of a silver salt and a salt of a metal selected from the group consisting of tin, bismuth, cobalt, antimony, iridium, indium, lead, copper, iron, zinc, nickel, palladium, platinum, and gold; and (B) at least one aliphatic sulfide compound comprising a functionality selected from the group consisting of an ether oxygen atom, a 3-hydroxypropyl group, and a hydroxypropylene group, with the proviso that the aliphatic sulfide compound does not comprise a basic nitrogen atom.
摘要翻译：开发稳定的非氰化银和银合金电镀浴。本发明是一种银和银合金电镀液，包括：（A）可溶性盐，其包含银盐或银盐和选自锡，铋，钴等的金属盐的混合物，锑，铱，铟，铅，铜，铁，锌，镍，钯，铂和金; 和（B）至少一种包含选自醚氧原子，3-羟基丙基和羟基亚丙基的官能团的脂族硫化物，条件是脂族硫化物不包含碱性氮原子。

5. 发明申请

US20060113006A1 Tin-containing plating bath 审中-公开
标题翻译：含锡电镀浴
公开(公告)号：US20060113006A1
公开(公告)日：2006-06-01
申请号：US10542029
申请日：2004-01-22
申请人： Akihiro Masuda , Masayoshi Kohinata , Keigo Obata , Masakazu Yoshimoto , Kiyotaka Tsuji , Ei Uchida , Keiji Ori , Masahiro Eikawa
发明人： Akihiro Masuda , Masayoshi Kohinata , Keigo Obata , Masakazu Yoshimoto , Kiyotaka Tsuji , Ei Uchida , Keiji Ori , Masahiro Eikawa
IPC分类号： C23C22/48
CPC分类号： C25D3/32 , C25D3/60 , H01L2224/11462
摘要： The present invention provides a tin-containing plating bath comprising: (a) a soluble stannous salt, or a mixture of a soluble stannous salt and at least one soluble salt selected from the group consisting of copper salts, bismuth salts, silver salts, indium salts, zinc salts, nickel salts, cobalt salts and antimony salts; and (b) at least one aliphatic sulfonic acid selected from the group consisting of alkanesulfonic acids and alkanolsulfonic acids, the aliphatic sulfonic acid being a purified aliphatic sulfonic acid in which the total amount of sulfur-containing compounds as impurities consisting of compound(s) containing one or more sulfur atoms with an oxidation number of +4 or less in the molecule and compound(s) containing one or more sulfur atoms and one or more chlorine atoms in the molecule is a minute amount or less. A tin or tin alloy plating film with excellent reflowability, film appearance, etc. can be formed by the use of this plating bath.
摘要翻译：本发明提供一种含锡电镀液，其包含：（a）可溶性亚锡盐或可溶性亚锡盐与至少一种选自铜盐，铋盐，银盐，铟的可溶性盐的混合物盐，锌盐，镍盐，钴盐和锑盐; 和（b）选自烷烃磺酸和链烷醇磺酸的至少一种脂族磺酸，所述脂族磺酸是纯化的脂族磺酸，其中作为杂质的含硫化合物的总量由化合物在分子中含有氧化数为+4以下的一个或多个硫原子，分子中含有一个以上硫原子和一个以上氯原子的化合物为微量以下。可以通过使用该镀浴形成具有优异的回流性，膜外观等的锡或锡合金电镀膜。

6. 发明授权

US08350245B2 Variable resistance element and nonvolatile semiconductor memory device using the same 有权
标题翻译：可变电阻元件和使用其的非易失性半导体存储器件
公开(公告)号：US08350245B2
公开(公告)日：2013-01-08
申请号：US13133809
申请日：2009-12-08
申请人： Kiyotaka Tsuji
发明人： Kiyotaka Tsuji
IPC分类号： H01L29/02
CPC分类号： H01L27/101 , H01L27/2436 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675
摘要： To provide a variable resistance element capable of preventing the interface resistance, in a side of the variable resistance element in which resistance change is not allowed, from changing to high resistance due to applied voltage. The variable resistance element is configured by providing a variable resistance film (265) between a first electrode (280) and a second electrode (250), the oxygen concentration within the film of the variable resistance film (265) is high at the side of an interface with the second electrode (250) (high-concentration variable resistance layer (260)) and low at the side of an interface with the first electrode (280) (low-concentration variable resistance layer (270)), and the junction surface area between the low-concentration variable resistance layer (270) and the first electrode (280) is larger than the interface surface area between the high-concentration variable resistance layer (260) and the second electrode (250).
摘要翻译：为了提供一种可变电阻元件，能够防止在不允许电阻变化的可变电阻元件侧的界面电阻由于施加的电压而变为高电阻。可变电阻元件通过在第一电极（280）和第二电极（250）之间设置可变电阻膜（265）而构成，可变电阻膜（265）的膜内的氧浓度在与第二电极（250）（高浓度可变电阻层（260））的界面和与第一电极（280）的界面侧的低（低浓度可变电阻层（270））的界面，低浓度可变电阻层（270）和第一电极（280）之间的表面积大于高浓度可变电阻层（260）和第二电极（250）之间的界面面积。

7. 发明申请

US20110074539A1 VARIABLE RESISTANCE ELEMENT AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：可变电阻元件及其制造方法
公开(公告)号：US20110074539A1
公开(公告)日：2011-03-31
申请号：US12994916
申请日：2010-04-14
申请人： Kiyotaka Tsuji
发明人： Kiyotaka Tsuji
IPC分类号： H01C7/10 , H01C17/00
CPC分类号： H01L45/1246 , H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1683 , Y10T29/49082
摘要： A variable resistance element capable of increasing stability of a resistance changing operation and reducing a current necessary for changing, to a low resistance state for the first time, the variable resistance element in an initial state immediately after manufacture. The variable resistance element includes: a first electrode (101); a memory cell hole (150) formed above the first electrode (101); a first variable resistance layer (201) covering a bottom of the memory cell hole (150) and an upper surface of the first electrode (101); a second variable resistance layer (202) formed on the first variable resistance layer (201); and a second electrode (102) formed on the memory cell hole (150), in which a thickness of the first variable resistance layer (201) at the bottom of the memory cell hole (150) gradually decreases toward an edge area of the memory cell hole (150) and has a local minimum value around the edge area of the memory cell hole (150). Furthermore, an oxygen concentration in the first variable resistance layer (201) is higher than an oxygen concentration in the second variable resistance layer (202).
摘要翻译：一种可变电阻元件，其能够增加电阻变化操作的稳定性，并且减少在制造后立即将初始状态中的可变电阻元件首次变为低电阻状态所需的电流。可变电阻元件包括：第一电极（101）; 形成在所述第一电极（101）上方的存储单元孔（150）; 覆盖存储单元孔（150）底部的第一可变电阻层（201）和第一电极（101）的上表面; 形成在第一可变电阻层（201）上的第二可变电阻层（202）; 以及形成在存储单元孔（150）上的第二电极（102），其中存储单元孔（150）底部的第一可变电阻层（201）的厚度朝向存储器的边缘区域逐渐减小电池孔（150），并且在存储单元孔（150）的边缘区域周围具有局部最小值。此外，第一可变电阻层（201）中的氧浓度高于第二可变电阻层（202）中的氧浓度。

8. 发明申请

US20100295012A1 NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储元件和非易失性存储器件
公开(公告)号：US20100295012A1
公开(公告)日：2010-11-25
申请号：US12863535
申请日：2009-11-18
申请人： Takumi Mikawa , Kiyotaka Tsuji , Takashi Okada
发明人： Takumi Mikawa , Kiyotaka Tsuji , Takashi Okada
IPC分类号： H01L27/10 , H01L45/00
CPC分类号： G11C13/003 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2213/15 , G11C2213/32 , G11C2213/56 , G11C2213/72 , G11C2213/76 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： A nonvolatile memory element comprises a resistance variable element 105 configured to reversibly change between a low-resistance state and a high-resistance state in response to electric signals with different polarities which are applied thereto; and a current controlling element 112 configured such that when a current flowing when a voltage whose absolute value is a first value as a desired value which is larger than 0 and smaller than a predetermined voltage value and whose polarity is a first polarity is applied is a first current and a current flowing when a voltage whose absolute value is the first value and whose polarity is a second polarity different from the first polarity is applied is a second current, the first current is higher than the second current, and the resistance variable element is connected in series with the current controlling element such that a polarity of a voltage applied to the current controlling element when the resistance variable element is changed from the low-resistance state to the high-resistance state is the first polarity.
摘要翻译：非易失性存储元件包括电阻可变元件105，其被配置为响应于施加到其上的具有不同极性的电信号在低电阻状态和高电阻状态之间可逆地变化; 以及电流控制元件112，被配置为当施加绝对值为第一值的电压作为大于0且小于预定电压值且极性为第一极性的期望值的电流流过的电流控制元件112为当施加绝对值为第一值且极性为与第一极性不同的第二极性的电压时的第一电流和电流是第二电流，第一电流高于第二电流，并且电阻可变元件与电流控制元件串联连接，使得当电阻可变元件从低电阻状态改变为高电阻状态时施加到电流控制元件的电压的极性是第一极性。

9. 发明申请

US20060056250A1 Magnetic memory, and its operating method 有权
标题翻译：磁记忆体及其操作方法
公开(公告)号：US20060056250A1
公开(公告)日：2006-03-16
申请号：US10512545
申请日：2003-04-21
申请人： Sadahiko Miura , Tadahiko Sugibayashi , Hideaki Numata , Kiyotaka Tsuji
发明人： Sadahiko Miura , Tadahiko Sugibayashi , Hideaki Numata , Kiyotaka Tsuji
IPC分类号： G11C7/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16
摘要： A technology for eliminating the defects in a tunnel insulation film of magnetic tunnel junction and for suppressing generation of a defective bit in an MRAM using magnetic tunnel junction in a memory. The magnetic memory includes a substrate, an interlayer insulation film covering the upper surface side of the substrate, memory cells, and plugs penetrating the interlayer insulation film. The memory cell includes a first magnetic layer formed on the upper surface side of the interlayer insulation film, a tunnel insulation layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel insulation layer. The plug is connected electrically with the first magnetic layer. The tunnel current passing part of the tunnel insulation layer located between the first and second magnetic layers is arranged, at least partially, so as not to overlap the plug in the direction perpendicular to the surface of the substrate.
摘要翻译：一种用于消除磁隧道结隧道绝缘膜中的缺陷并用于抑制在存储器中使用磁性隧道结的MRAM中的有缺陷位的产生的技术。磁性存储器包括基板，覆盖基板的上表面侧的层间绝缘膜，存储单元和穿透层间绝缘膜的插塞。存储单元包括形成在层间绝缘膜的上表面侧的第一磁性层，形成在第一磁性层上的隧道绝缘层和形成在隧道绝缘层上的第二磁性层。插头与第一磁性层电连接。位于第一和第二磁性层之间的隧道绝缘层的隧道电流通过部分被布置成至少部分地不与垂直于衬底的表面的方向上的插塞重叠。

10. 发明授权

US08900965B2 Nonvolatile memory device manufacturing method 有权
标题翻译：非易失性存储器件制造方法
公开(公告)号：US08900965B2
公开(公告)日：2014-12-02
申请号：US13884630
申请日：2012-03-21
申请人： Haruyuki Sorada , Takumi Mikawa , Kenji Tominaga , Kiyotaka Tsuji
发明人： Haruyuki Sorada , Takumi Mikawa , Kenji Tominaga , Kiyotaka Tsuji
IPC分类号： H01L45/00 , H01L27/24 , H01L27/10
CPC分类号： H01L45/16 , H01L27/101 , H01L27/2409 , H01L27/2418 , H01L27/2463 , H01L45/04 , H01L45/1683
摘要： A method of manufacturing a nonvolatile memory device that is a variable resistance nonvolatile memory device, which has good consistency with a dual damascene process that is suitable for the formation of fine copper lines and which enables large capacity and high integration. This method includes: forming a variable resistance element, a contact hole and a line groove; and forming a current steering layer of a bidirectional diode element above interlayer insulating layers and a variable resistance layer to cover the line groove without covering a bottom surface of the contact hole.
摘要翻译：一种制造非易失性存储器件的方法，其是可变电阻非易失性存储器件，其与适合于形成细铜线的双镶嵌工艺具有良好的一致性，并且能够实现大容量和高集成度。该方法包括：形成可变电阻元件，接触孔和线槽; 并且在层间绝缘层之上形成双向二极管元件的电流转向层和可变电阻层以覆盖线槽而不覆盖接触孔的底表面。

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