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1. 发明授权

US07284443B2 Semiconductor pressure sensor and process for fabricating the same 失效
标题翻译：半导体压力传感器及其制造方法
公开(公告)号：US07284443B2
公开(公告)日：2007-10-23
申请号：US10543493
申请日：2004-01-29
申请人： Masakazu Sato , Tatsuya Ito , Hideto Noguchi
发明人： Masakazu Sato , Tatsuya Ito , Hideto Noguchi
IPC分类号： G01L9/00
CPC分类号： G01L9/0054 , G01L19/0069
摘要： This invention aims to realize reduction in size without impairing measurement accuracy or connection reliability in a semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the front surface of the diaphragm with reference to a pressure of the first space as a standard pressure. In order to achieve this object, the semiconductor pressure sensor includes resinous projections formed on pressure-sensitive gauge electrodes disposed on a front surface of the pressure-sensitive chip or on wiring from the pressure-sensitive gauge electrodes and bumps formed so as to partially or entirely cover the resinous projections.
摘要翻译：本发明的目的是在不损害其中玻璃基板粘附在其上形成有压阻压力计的压敏片的背面侧的半导体压力传感器中实现尺寸的减小而不损害测量精度或连接可靠性由硅单晶形成的隔膜的前表面，以在隔膜的后表面和玻璃基板之间形成空间，用于参照第一空间的压力测量施加到隔膜前表面的压力标准压力。为了实现该目的，半导体压力传感器包括形成在压敏表电极上的树脂突起，所述压敏电极设置在压敏芯片的前表面上，或者布置在压敏表电极和凸起上，凸起形成为局部或完全覆盖树脂突起。

2. 发明授权

US07530276B2 Semiconductor pressure sensor and manufacturing method thereof 失效
标题翻译：半导体压力传感器及其制造方法
公开(公告)号：US07530276B2
公开(公告)日：2009-05-12
申请号：US11843342
申请日：2007-08-22
申请人： Masakazu Sato , Tatsuya Ito , Hideto Noguchi
发明人： Masakazu Sato , Tatsuya Ito , Hideto Noguchi
IPC分类号： G01L9/00 , G01L9/16
CPC分类号： G01L9/0054 , G01L19/0069
摘要： This invention aims to realize reduction in size without impairing measurement accuracy or connection reliability in a semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the front surface of the diaphragm with reference to a pressure of the first space as a standard pressure. In order to achieve this object, the semiconductor pressure sensor includes resinous projections formed on pressure-sensitive gauge electrodes disposed on a front surface of the pressure-sensitive chip or on wiring from the pressure-sensitive gauge electrodes and bumps formed so as to partially or entirely cover the resinous projections.
摘要翻译：本发明的目的是在不损害其中玻璃基板粘附在其上形成有压阻压力计的压敏片的背面侧的半导体压力传感器中实现尺寸的减小而不损害测量精度或连接可靠性由硅单晶形成的隔膜的前表面，以在隔膜的后表面和玻璃基板之间形成空间，用于参照第一空间的压力测量施加到隔膜前表面的压力标准压力。为了实现该目的，半导体压力传感器包括形成在压敏表电极上的树脂突起，所述压敏电极设置在压敏芯片的前表面上，或者布置在压敏表电极和凸起上，凸起形成为局部或完全覆盖树脂突起。

3. 发明申请

US20060185437A1 Semiconductor pressure sensor and process for fabricating the same 失效
标题翻译：半导体压力传感器及其制造方法
公开(公告)号：US20060185437A1
公开(公告)日：2006-08-24
申请号：US10543493
申请日：2004-01-29
申请人： Masakazu Sato , Tatsuya Ito , Hideto Noguchi
发明人： Masakazu Sato , Tatsuya Ito , Hideto Noguchi
IPC分类号： G01L9/00
CPC分类号： G01L9/0054 , G01L19/0069
摘要： This invention aims to realize reduction in size without impairing measurement accuracy or connection reliability in a semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the front surface of the diaphragm with reference to a pressure of the first space as a standard pressure. In order to achieve this object, the semiconductor pressure sensor includes resinous projections formed on pressure-sensitive gauge electrodes disposed on a front surface of the pressure-sensitive chip or on wiring from the pressure-sensitive gauge electrodes and bumps formed so as to partially or entirely cover the resinous projections.
摘要翻译：本发明的目的是在不损害其中玻璃基板粘附在其上形成有压阻压力计的压敏片的背面侧的半导体压力传感器中实现尺寸的减小而不损害测量精度或连接可靠性由硅单晶形成的隔膜的前表面，以在隔膜的后表面和玻璃基板之间形成空间，用于参照第一空间的压力测量施加到隔膜前表面的压力标准压力。为了实现该目的，半导体压力传感器包括形成在压敏表电极上的树脂突起，所述压敏电极设置在压敏芯片的前表面上，或者布置在压敏表电极和凸起上，凸起形成为局部或完全覆盖树脂突起。

4. 发明申请

US20080203527A1 Semiconductor device having gate electrode connection to wiring layer 审中-公开
标题翻译：具有栅电极连接到布线层的半导体器件
公开(公告)号：US20080203527A1
公开(公告)日：2008-08-28
申请号：US12081960
申请日：2008-04-24
申请人： Kazuhisa Itoi , Masakazu Sato , Tatsuya Ito
发明人： Kazuhisa Itoi , Masakazu Sato , Tatsuya Ito
IPC分类号： H01L29/00
CPC分类号： H01L28/10 , Y10T29/49117
摘要： A semiconductor device includes a semiconductor substrate having an electrode formed above a surface thereof; a first insulating resin layer that is provided over the semiconductor substrate and has a first opening defined at a position corresponding to the electrode; a first wiring layer that is provided on the first insulating resin layer and is connected to the electrode through the first opening; a second insulating resin layer provided over the first insulating resin layer and the first wiring layer, the second insulating resin layer having a second opening that is defined at a position different from the position of the first opening in a direction of the surface of the semiconductor substrate; and a second wiring layer that is provided on the second insulating resin layer and is connected to the first wiring layer through the second opening, wherein the second wiring layer includes an induction element, and a sum of a thickness of the first insulating resin layer and a thickness of the second insulating resin layer is not less than 5 μm and not more than 60 μm.
摘要翻译：半导体器件包括其表面上形成有电极的半导体衬底; 第一绝缘树脂层，设置在所述半导体衬底上并且具有限定在对应于所述电极的位置的第一开口; 第一布线层，设置在第一绝缘树脂层上，并通过第一开口连接到电极; 设置在所述第一绝缘树脂层和所述第一布线层上的第二绝缘树脂层，所述第二绝缘树脂层具有限定在与所述第一开口的位置不同的位置的第二开口，所述第二开口沿所述半导体的表面的方向基质; 以及第二布线层，其设置在所述第二绝缘树脂层上并且通过所述第二开口连接到所述第一布线层，其中所述第二布线层包括感应元件，并且所述第一绝缘树脂层和第二绝缘树脂层的厚度为5μm以上且60μm以下。

5. 发明授权

US07429779B2 Semiconductor device having gate electrode connection to wiring layer 失效
公开(公告)号：US07429779B2
公开(公告)日：2008-09-30
申请号：US11189134
申请日：2005-07-26
申请人： Kazuhisa Itoi , Masakazu Sato , Tatsuya Ito
发明人： Kazuhisa Itoi , Masakazu Sato , Tatsuya Ito
IPC分类号： H01L43/00
CPC分类号： H01L28/10 , Y10T29/49117
摘要： A semiconductor device includes a semiconductor substrate having an electrode formed above a surface thereof; a first insulating resin layer that is provided over the semiconductor substrate and has a first opening defined at a position corresponding to the electrode; a first wiring layer that is provided on the first insulating resin layer and is connected to the electrode through the first opening; a second insulating resin layer provided over the first insulating resin layer and the first wiring layer, the second insulating resin layer having a second opening that is defined at a position different from the position of the first opening in a direction of the surface of the semiconductor substrate; and a second wiring layer that is provided on the second insulating resin layer and is connected to the first wiring layer through the second opening, wherein the second wiring layer includes an induction element, and a sum of a thickness of the first insulating resin layer and a thickness of the second insulating resin layer is not less than 5 μm and not more than 60 μm.

6. 发明申请

US20060022287A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060022287A1
公开(公告)日：2006-02-02
申请号：US11189134
申请日：2005-07-26
申请人： Kazuhisa Itoi , Masakazu Sato , Tatsuya Ito
发明人： Kazuhisa Itoi , Masakazu Sato , Tatsuya Ito
IPC分类号： H01L43/00
CPC分类号： H01L28/10 , Y10T29/49117
摘要： A semiconductor device includes a semiconductor substrate having an electrode formed above a surface thereof; a first insulating resin layer that is provided over the semiconductor substrate and has a first opening defined at a position corresponding to the electrode; a first wiring layer that is provided on the first insulating resin layer and is connected to the electrode through the first opening; a second insulating resin layer provided over the first insulating resin layer and the first wiring layer, the second insulating resin layer having a second opening that is defined at a position different from the position of the first opening in a direction of the surface of the semiconductor substrate; and a second wiring layer that is provided on the second insulating resin layer and is connected to the first wiring layer through the second opening, wherein the second wiring layer includes an induction element, and a sum of a thickness of the first insulating resin layer and a thickness of the second insulating resin layer is not less than 5 μm and not more than 60 μm.
摘要翻译：半导体器件包括其表面上形成有电极的半导体衬底; 第一绝缘树脂层，设置在所述半导体衬底上并且具有限定在对应于所述电极的位置的第一开口; 第一布线层，设置在第一绝缘树脂层上，并通过第一开口连接到电极; 设置在所述第一绝缘树脂层和所述第一布线层上的第二绝缘树脂层，所述第二绝缘树脂层具有限定在与所述第一开口的位置不同的位置的第二开口，所述第二开口沿所述半导体的表面的方向基质; 以及第二布线层，其设置在所述第二绝缘树脂层上并且通过所述第二开口连接到所述第一布线层，其中所述第二布线层包括感应元件，并且所述第一绝缘树脂层和第二绝缘树脂层的厚度为5μm以上且60μm以下。

7. 发明授权

US09237091B2 System and method of load balancing for ethernet link aggregation 有权
标题翻译：以太网链路聚合的负载均衡的系统和方法
公开(公告)号：US09237091B2
公开(公告)日：2016-01-12
申请号：US13529371
申请日：2012-06-21
申请人： Masakazu Sato , Satoshi Nakajima , Kazunari Suzuki
发明人： Masakazu Sato , Satoshi Nakajima , Kazunari Suzuki
IPC分类号： H04L12/931 , H04L12/709 , H04L29/12 , H04W84/18 , H04L12/413 , H04L12/741 , H04L29/06
CPC分类号： H04L45/245 , H04L12/413 , H04L45/745 , H04L49/351 , H04L61/2092 , H04L69/22 , H04W84/18 , Y02D50/30
摘要： A system and method of transmitting data across a first link aggregation formed by an intermediate switch and a downstream switch, the intermediate switch adopting a Media-Access Card (MAC)-address-based load sharing algorithm for distributing traffic among links to the downstream switch interfaced with a final destination device. The method comprises: receiving a packet having a MAC header and an IP header at an input port of an upstream switch for transmission from the upstream switch to the intermediate switch, the upstream switch and intermediate switch forming a second link aggregation; re-writing, at the upstream switch, the source MAC address of the received packet to a different source address; sending the packet through the second link aggregation to the intermediate switch, the intermediate switch implementing the load sharing algorithm for sending the packet to the downstream switch along a link through the first link aggregation to the destination device.
摘要翻译：一种通过中间交换机和下游交换机形成的第一链路聚合发送数据的系统和方法，所述中间交换机采用基于媒体接入卡（MAC）地址的负载分担算法，用于在下游交换机的链路之间分配业务与最终目的地设备连接。该方法包括：在上游交换机的输入端口接收具有MAC报头和IP报头的分组，从上游交换机向中间交换机发送，上游交换机和中间交换机形成第二链路聚合; 在上游交换机上重新写入接收到的数据包的源MAC地址到不同的源地址; 将所述分组通过所述第二链路聚合发送到所述中间交换机，所述中间交换机实现负载分担算法，用于通过所述第一链路聚合向所述目的设备沿着链路向所述下游交换机发送所述分组。

8. 发明授权

US08756421B2 Authentication device using true random number generating element or pseudo-random number generating element, authentication apparatus, and authentication method 有权
标题翻译：使用真实随机数生成元素或伪随机数生成元素，认证装置和认证方法的认证装置
公开(公告)号：US08756421B2
公开(公告)日：2014-06-17
申请号：US12301168
申请日：2007-05-16
申请人： Osamu Kameda , Masakazu Sato
发明人： Osamu Kameda , Masakazu Sato
IPC分类号： G06F21/00 , H04L29/06 , H04L9/08
CPC分类号： H04L9/0822 , G06F21/31 , G06F21/34 , H04L9/0819 , H04L9/0863 , H04L9/0869 , H04L9/0877 , H04L9/0891 , H04L9/3228 , H04L63/068
摘要： Provided are an authentication device using a true random number generating element or a pseudo-random number generating element, for example, a USB token, an authentication apparatus using the same, an authentication method, an authentication system and the like. In the authentication system, the authentication device is prepared on a user side, and one code generated in the authentication device is used to encrypt another code. The authentication apparatus registers the codes and decrypts the encrypted code sent from the authentication device by using the registered codes to perform an authentication.
摘要翻译：提供了使用真随机数生成元素或伪随机数生成元素的认证装置，例如USB令牌，使用该令牌的认证装置，认证方法，认证系统等。在认证系统中，认证装置在用户侧准备，并且在认证装置中生成的一个代码用于加密另一个代码。验证装置通过使用注册代码对代码进行登记并解密从认证装置发送的加密代码来进行认证。

9. 发明授权

US08274980B2 Ethernet link aggregation 失效
标题翻译：以太网链路聚合
公开(公告)号：US08274980B2
公开(公告)日：2012-09-25
申请号：US12393727
申请日：2009-02-26
申请人： Masakazu Sato , Satoshi Nakajima , Kazunari Suzuki
发明人： Masakazu Sato , Satoshi Nakajima , Kazunari Suzuki
IPC分类号： H04L12/56
CPC分类号： H04L45/245 , H04L12/413 , H04L45/745 , H04L49/351 , H04L61/2092 , H04L69/22 , H04W84/18 , Y02D50/30
摘要： A system and method of transmitting data across a link aggregation group, the method comprises: receiving a packet sourced from a client having a MAC header and an IP header at an input port of a first upstream switch for transmission from the first upstream switch along a link aggregation and at least two down stream switches to a server, said MAC header having a Destination MAC address and a Source MAC address, and the IP header having a Source IP address and a Destination IP address; changing the destination MAC address from a down stream destination to another down stream destination; sending the packet through a first link aggregation to a first down stream switch; using a hash calculation for changing the Source MAC address of the packet in the first down stream switch to a new address; sending the packet through a second link aggregation to a second down stream switch having an address; and sending the packet from the second down stream switch to a server having a server address.
摘要翻译：一种通过链路聚合组发送数据的系统和方法，所述方法包括：从第一上游交换机的输入端口接收来自具有MAC报头和IP报头的客户端的分组，以从第一上游交换机沿着链路聚合和至少两个下行切换到服务器，所述MAC报头具有目的地MAC地址和源MAC地址，所述IP报头具有源IP地址和目的地IP地址; 将目的MAC地址从下行目的地改变到另一下行目的地; 通过第一链路聚合将分组发送到第一下行链路交换机; 使用哈希计算来将第一下行切换中的分组的源MAC地址改变为新的地址; 通过第二链路聚合将分组发送到具有地址的第二下行交换机; 并将分组从第二下行交换机发送到具有服务器地址的服务器。

10. 发明申请

US20110269960A1 TRIAZOLE DERIVATIVE 审中-公开
标题翻译：三唑衍生物
公开(公告)号：US20110269960A1
公开(公告)日：2011-11-03
申请号：US13180011
申请日：2011-07-11
申请人： Naoya ONO , Tetsuo Takayama , Fumiyasu Shiozawa , Hironori Katakai , Tetsuya Yabuuchi , Tomomi Ota , Makoto Yagi , Masakazu Sato
发明人： Naoya ONO , Tetsuo Takayama , Fumiyasu Shiozawa , Hironori Katakai , Tetsuya Yabuuchi , Tomomi Ota , Makoto Yagi , Masakazu Sato
IPC分类号： C07D249/12 , C07D413/12 , C07D487/04 , C07D491/113 , C07D401/12 , C07D417/14 , C07D249/08 , C07D403/12 , C07D409/12 , C07D405/12 , C07D409/14 , C07D403/14 , C07D401/14 , C07D405/14 , C07D413/14
CPC分类号： C07D249/08
摘要： An object of the present invention is to provide a compound having an action of inhibiting binding between S1P and its receptor, Edg-1 (S1P1), and is useful as a pharmaceutical compound. A compound or a pharmaceutically acceptable salt thereof, which compound is represented by the formula below (where A represents an oxygen atom, a sulfur atom, a group represented by Formula —SO—, a group represented by Formula —SO2—, or the like, R1 represents a hydrogen atom, an alkyl group having 1-6 carbon atoms, or the like, R1A represents a hydrogen atom or the like, R2 represents an alkyl group having 1-6 carbon atoms, a cycloalkyl group having 3-6 carbon atoms, or the like, R3 represents an aryl group, R4 represents a hydrogen atom or an alkyl group having 1-6 carbon atoms and optionally substituted with a carboxyl group, and R5 represents an alkyl group having 1-10 carbon atoms, a cycloalkyl group having 3-8 carbon atoms, an aryl group which is optionally substituted, or the like).
摘要翻译：本发明的目的是提供具有抑制S1P与其受体Edg-1（S1P1）结合的作用的化合物，可用作药物化合物。化合物或其药学上可接受的盐，其化合物由下式表示（其中A表示氧原子，硫原子，由式-SO-表示的基团，由式-SO2-表示的基团等） R1表示氢原子，具有1-6个碳原子的烷基等，R1A表示氢原子等，R2表示具有1-6个碳原子的烷基，具有3-6个碳原子的环烷基原子等，R 3表示芳基，R 4表示氢原子或具有1-6个碳原子并且任选被羧基取代的烷基，R 5表示具有1-10个碳原子的烷基，环烷基具有3-8个碳原子的基团，任选取代的芳基等）。

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