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1. 发明授权

US4608150A Pitch material for carbonaceous body and a method for the preparation thereof 失效
标题翻译：用于碳体的沥青材料及其制备方法
公开(公告)号：US4608150A
公开(公告)日：1986-08-26
申请号：US710021
申请日：1985-03-11
申请人： Masaaki Itoi , Masakatsu Ohta , Taizo Sugioka , Kunio Yoshihara , Hiroshi Nishitani
发明人： Masaaki Itoi , Masakatsu Ohta , Taizo Sugioka , Kunio Yoshihara , Hiroshi Nishitani
IPC分类号： C01B31/00 , C10C3/00 , C10C3/02 , C10C3/10 , D01F9/145 , D01F9/155 , C10C1/00
CPC分类号： D01F9/145 , C10C3/002
摘要： The invention provides a novel pitch material useful as a base material of carbon fibers having excellent mechanical properties and characterized by a unique combination of several property parameters including the content of the optically anisotropic phase of at least 80%, a content of the pyridine-insoluble matter in the range from 30 to 70% by weight, a number average molecular weight in the range from 1000 to 1400 and a softening point in the range from 330.degree. to 380.degree. C. Such a pitch material is obtained from a starting pitch of a petroleum-based residual oil freed from light oily matter through a two-step heat treatment, of which the first step is performed at 400.degree. to 460.degree. C. under a pressure of 5 to 50 mmHg and the second step is performed at 450.degree. to 550.degree. C. for 0.2 to 30 minutes under a pressure of 0.1 to 5 mmHg. The advantages obtained by use of a film evaporator in the above mentioned heat treatment are described. The time taken for the infusibilization treatment of the pitch filaments is greatly decreased when the filaments were prepared from the inventive pitch material by spinning in comparison with conventional pitches and the spinning temperature can also be relatively low.
摘要翻译：本发明提供了一种新颖的沥青材料，其可用作具有优异机械性能的碳纤维的基础材料，并且特征在于几个性质参数的独特组合，包括至少80％的光学各向异性相的含量，不溶于吡啶的含量物质在30至70重量％的范围内，数均分子量在1000至1400，软化点在330至380℃的范围内。这种沥青材料从起始间距通过两步热处理从轻质油状物中除去石油基残余油，其中第一步在400-460℃下在5至50mmHg的压力下进行，第二步在450℃ 在0.1〜5mmHg的压力下，在550℃下进行0.2〜30分钟。描述在上述热处理中使用薄膜蒸发器获得的优点。当采用本发明的沥青材料通过与传统的间距相比进行纺丝制备长丝时，沥青丝的熔融处理所花费的时间大大降低，并且纺丝温度也可以相对较低。

2. 发明授权

US4887957A Nozzle for melt spinning of pitch and method for spinning pitch 失效
标题翻译：用于熔融纺丝的喷嘴和旋转沥青的方法
公开(公告)号：US4887957A
公开(公告)日：1989-12-19
申请号：US253762
申请日：1988-10-05
申请人： Masakatsu Ohta , Masaaki Itoi
发明人： Masakatsu Ohta , Masaaki Itoi
IPC分类号： D01D4/02 , D01F9/00
CPC分类号： D01F9/00 , D01D4/02
摘要： A nozzle for melt spinning of pitch to produce pitch fibers which are to be used in production of carbon fibers, includes a pitch flow section and a plurality of nozzle holes provided in the bottom of the nozzle. The pitch is passed through a pitch flow turning section, a pitch reservoir section, and the plurality of nozzle holes. Pitch can be spun without causing cracks and unevenness in spinning to produce pitch fibers which can provide excellent carbon fibers on calcination.

3. 发明授权

US4998821A Projection apparatus 失效
标题翻译：投影仪
公开(公告)号：US4998821A
公开(公告)日：1991-03-12
申请号：US220440
申请日：1988-07-13
申请人： Masakatsu Ohta , Shuichi Yabu , Junichi Murakami
发明人： Masakatsu Ohta , Shuichi Yabu , Junichi Murakami
IPC分类号： G03F7/20 , G03F7/207
CPC分类号： G03F7/70891 , G03F7/70241 , G03F7/70258 , G03F7/70716 , G03F7/70858 , G03F7/70866 , G03F7/70875 , G03F7/70883
摘要： A projection apparatus for projecting through an optical system a circuit pattern formed on a mask or reticle onto a wafer. Ambient or environment conditions of the apparatus, such as an atmospheric pressure, temperature and humidity are detected and, on the basis of the results of detection, any focus error and magnification error upon pattern projection on the wafer are corrected.
摘要翻译：一种用于通过光学系统将形成在掩模或掩模版上的电路图案投影到晶片上的投影设备。检测设备的环境或环境条件，例如大气压，温度和湿度，并且基于检测结果校正晶片上的图案投影上的任何聚焦误差和放大误差。

4. 发明申请

US20060027531A1 Base material cutting method, base material cutting apparatus, ingot cutting method, ingot cutting apparatus and wafer producing method 审中-公开
公开(公告)号：US20060027531A1
公开(公告)日：2006-02-09
申请号：US11222548
申请日：2005-09-08
申请人： Nobuo Kawase , Masakatsu Ohta , Nobuyoshi Tanaka
发明人： Nobuo Kawase , Masakatsu Ohta , Nobuyoshi Tanaka
IPC分类号： C23F1/00 , B23K26/16 , B44C1/22 , B23K26/14
CPC分类号： B28D5/00 , B28D5/04
摘要： This invention discloses an ingot cutting apparatus, wherein a crystalline ingot is positioned within an etching gas and a component of the etching gas is excited by illumination of light from a light source onto the crystalline ingot, thereby making a component of the etching gas react chemically with the component of the crystalline ingot and volatilizing the component of the crystalline ingot to cut the crystalline ingot and obtain wafers and wherein light from a light source is guided to the crystalline ingot via a sheet-like, bar-like, or fiber-like optical wave guide.

5. 发明授权

US4988188A Illumination device 失效
标题翻译：照明装置
公开(公告)号：US4988188A
公开(公告)日：1991-01-29
申请号：US238592
申请日：1988-08-31
申请人： Masakatsu Ohta
发明人： Masakatsu Ohta
IPC分类号： G02B19/00 , G03F7/20 , H01L21/027
CPC分类号： G03F7/70058
摘要： An illumination device includes a light source; a secondary light source forming system for forming predetermined secondary light sources by use of light from the light source, the secondary light source forming system including a plurality of lens array units disposed in the direction of an optical axis and each having a plurality of lens elements distributed in a plane perpendicular to the optical axis; an optical system for directing light from the secondary light sources to a surface to be illuminated; and an actuating device for displacing at least one lens array unit in the direction of the optical axis to adjust the illuminance distribution on the surface being illuminated, while maintaining a substantially constant range of illumination on the surface being illuminated.
摘要翻译：照明装置包括光源; 二次光源形成系统，用于通过使用来自光源的光来形成预定的次级光源，次级光源形成系统包括沿光轴方向设置的多个透镜阵列单元，每个具有多个透镜元件分布在垂直于光轴的平面中; 用于将来自二次光源的光引导到要被照明的表面的光学系统; 以及致动装置，用于在光轴的方向上移位至少一个透镜阵列单元，以调节被照射的表面上的照度分布，同时保持被照射的表面上的基本恒定的照明范围。

6. 发明授权

US5148214A Alignment and exposure apparatus 失效
标题翻译：对准和曝光设备
公开(公告)号：US5148214A
公开(公告)日：1992-09-15
申请号：US759953
申请日：1991-09-17
申请人： Masakatsu Ohta , Hideki Ina , Akiyoshi Suzuki
发明人： Masakatsu Ohta , Hideki Ina , Akiyoshi Suzuki
IPC分类号： G03F7/20 , G03F9/00
CPC分类号： G03F9/70 , G03F7/2002
摘要： A mark detecting device usable in an alignment and exposure apparatus for aligning an alignment mark of a mask with an alignment mark of a wafer and for exposing a resist layer provided on the surface of the wafer to a pattern of the mask with radiation. The device includes a system for detecting light from the wafer, the detecting system including a photodetecting device for detecting light and a wavelength selecting element disposed in a path of light from the wafer to the photodetecting device so as to allow introduction of light of a predetermined wavelength into the light path from outside the light path to illuminate the wafer, and a portion for forming a photoprint of the alignment mark of the mask in the resist layer provided on the surface of the wafer, the photoprint forming portion being arranged, for the formation of the photoprint, to direct, to the wafer, the light of the predetermined wavelength from the outside of the light path and by way of the mask and the wavelength selecting element, wherein the photodetecting device is effective to detect the light from the wafer to detect the alignment mark of the wafer and the photoprint of the alignment mark of the mask.
摘要翻译：一种可用于对准和曝光装置的标记检测装置，用于将掩模的对准标记与晶片的对准标记对准，并且用于将设置在晶片表面上的抗蚀剂层暴露于具有辐射的掩模图案。该装置包括用于检测来自晶片的光的系统，所述检测系统包括用于检测光的光检测装置和布置在从晶片到光电检测装置的光的路径中的波长选择元件，以便允许引入预定的波长从光路外部的光路径照射晶片，以及用于形成在设置在晶片表面上的抗蚀剂层中的掩模的对准标记的照相印记的部分，所述照相印刷形成部分被布置为形成照相印记，从光路的外部引导预定波长的光，并通过掩模和波长选择元件引导到晶片，其中光检测器件有效地检测来自晶片的光以检测晶片的对准标记和掩模的对准标记的照相印刷。

7. 发明授权

US07005081B2 Base material cutting method, base material cutting apparatus, ingot cutting method, ingot cutting apparatus and wafer producing method 失效
公开(公告)号：US07005081B2
公开(公告)日：2006-02-28
申请号：US10188931
申请日：2002-07-03
申请人： Nobuo Kawase , Masakatsu Ohta , Nobuyoshi Tanaka
发明人： Nobuo Kawase , Masakatsu Ohta , Nobuyoshi Tanaka
IPC分类号： H01L21/00
CPC分类号： B28D5/00 , B28D5/04
摘要： This invention discloses an ingot cutting apparatus, wherein a crystalline ingot is positioned within an etching gas and a component of the etching gas is excited by illumination of light from a light source onto the crystalline ingot, thereby making a component of the etching gas react chemically with the component of the crystalline ingot and volatilizing the component of the crystalline ingot to cut the crystalline ingot and obtain wafers and wherein light from a light source is guided to the crystalline ingot via a sheet-like, bar-like, or fiber-like optical wave guide.

8. 发明授权

US4786947A Projection exposure apparatus 失效
标题翻译：投影曝光装置
公开(公告)号：US4786947A
公开(公告)日：1988-11-22
申请号：US45203
申请日：1987-05-04
申请人： Masao Kosugi , Toshikazu Matsushita , Shuichi Yabu , Masakatsu Ohta
发明人： Masao Kosugi , Toshikazu Matsushita , Shuichi Yabu , Masakatsu Ohta
IPC分类号： G03B27/52 , G03F7/20 , G03F7/207 , H01L21/027 , H01L21/30
CPC分类号： H01L21/30 , G03F7/70833 , G03F7/70858 , G03F7/70875 , G03F7/70891
摘要： A semiconductor device manufacturing projection exposure apparatus in which a pattern of a reticle is projected onto a semiconductor wafer through a projection optical system having a lens element and in which the reticle is irradiated with a light of a predetermined wavelength to thereby transfer the pattern of the reticle onto the semiconductor wafer. The apparatus includes a chamber adapted to house the reticle, the wafer and the projection optical system in a substantially closed space, detectors for detecting a temperature and a pressure of a gas contained in the space, and an adjusting unit for adjusting the temperature and pressure of the gas in the chamber, from the outside of the chamber, the operation of the adjusting unit being controlled on the basis of the detection by the detectors, whereby the temperature and pressure of the gas contained in the space are regulated so as to be best suited to retain a predetermined optical performance of the projection optical system and, whereby, high-precision pattern transfer is assured.
摘要翻译：一种半导体器件制造投影曝光装置，其中通过具有透镜元件的投影光学系统将掩模版的图案投影到半导体晶片上，并且其中用预定波长的光照射掩模版，从而传输掩模版到半导体晶片上。该装置包括适于将掩模版，晶片和投影光学系统容纳在基本封闭的空间中的室，用于检测包含在该空间中的气体的温度和压力的检测器，以及用于调节温度和压力的调节单元在室内的气体从腔室的外部开始，基于检测器的检测来控制调节单元的操作，由此将包含在空间中的气体的温度和压力调节为最适合于保持投影光学系统的预定光学性能，从而确保高精度图案转印。

9. 发明授权

US4683524A Illumination apparatus 失效
标题翻译：照明装置
公开(公告)号：US4683524A
公开(公告)日：1987-07-28
申请号：US919377
申请日：1986-10-16
申请人： Masakatsu Ohta
发明人： Masakatsu Ohta
IPC分类号： G03B27/54 , G02B19/00 , G03B27/16 , G03F7/20 , H01L21/027 , F21V7/04 , G03B27/02
CPC分类号： G03F7/70058
摘要： An illumination apparatus for illuminating a surface, having formed thereon a pattern, to transfer the pattern onto a semiconductor wafer. The apparatus includes an elliptic mirror for forming an image of a light source, an imaging system for re-imaging the image of the light source, formed by the elliptical mirror, while causing a curvature of field, a multi-beam generating system disposed relative to the imaging system so that the optimum focus located at the off-axis position of the imaging system is coincident with an input surface of the multi-beam generating system, and a collimator for directing to the pattern surface a number of discrete light beams generated by the multi-beam generating system to illuminate the pattern surface. Whereby a uniform intensity distribution of the light illuminating the pattern surface and a high light-collecting efficiency are assured.
摘要翻译：一种照明装置，用于照射已形成有图案的表面以将图案转印到半导体晶片上。该装置包括用于形成光源的图像的椭圆镜，用于重新成像由椭圆镜形成的光源的图像同时产生曲率的成像系统，相对设置的多光束发生系统以使得位于成像系统的离轴位置的最佳焦点与多光束产生系统的输入表面一致，以及准直器，用于将所产生的多个离散光束引导到图案表面通过多光束发生系统来照亮图案表面。由此确保了照亮图案表面的光的均匀的强度分布和高的聚光效率。

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