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1. 发明授权

US5245205A Dynamic random access memory having a reliable contact 失效
标题翻译：具有可靠联系的动态随机存取存储器
公开(公告)号：US5245205A
公开(公告)日：1993-09-14
申请号：US762117
申请日：1991-09-19
申请人： Masaaki Higasitani , Daitei Shin , Toshio Nomura
发明人： Masaaki Higasitani , Daitei Shin , Toshio Nomura
IPC分类号： H01L21/3205 , H01L21/768 , H01L21/8242 , H01L23/522 , H01L27/10 , H01L27/108
CPC分类号： H01L21/76802 , H01L23/5222 , H01L27/10808 , H01L2924/0002
摘要： A dynamic random access memory comprises a memory cell region and a sense amplifier region defined on a substrate, a plurality of memory cell capacitors provided on the memory cell region in correspondence to memory cell transistors, a first insulation layer provided on the semiconductor substrate to cover both the memory cell region and the sense amplifier region, a first conductor pattern provided on the first insulation layer, an intermediate connection pattern provided on the first insulation layer in correspondence to the sense amplifier region, a spin-on-glass layer provided on the first insulation layer to extend over both the memory cell region and the sense amplifier region, and a projection part provided on the substrate of the sense amplifier region in correspondence to the intermediate connection pattern under the first insulation layer for lifting the level of the surface of the first insulation layer such that the intermediate interconnection pattern is exposed above the upper major surface of the spin-on-glass layer. The projection part includes a conductor piece formed from a same conductor material that forms an opposing electrode of the memory cell capacitor. Further, a second insulation layer is provided on the spin on glass layer to bury the first conductor pattern and the intermediate conductor pattern, and a contact hole is provided on the second insulation layer to expose the intermediate conductor pattern. The intermediate conductor pattern is connected electrically to a second conductor pattern provided on the second insulation layer via the contact hole.

2. 发明授权

US5288655A Method of making dynamic random access memory having a reliable contact 失效
标题翻译：制造具有可靠接触的动态随机存取存储器的方法
公开(公告)号：US5288655A
公开(公告)日：1994-02-22
申请号：US49326
申请日：1993-04-21
申请人： Masaaki Higasitani , Daitei Shin , Toshio Nomura
发明人： Masaaki Higasitani , Daitei Shin , Toshio Nomura
IPC分类号： H01L21/3205 , H01L21/768 , H01L21/8242 , H01L23/522 , H01L27/10 , H01L27/108 , H01L21/70
CPC分类号： H01L21/76802 , H01L23/5222 , H01L27/10808 , H01L2924/0002
摘要： A dynamic random access memory comprises a memory cell region and a sense amplifier region defined on a substrate, a first insulation layer provided on the semiconductor substrate to cover both the memory cell region and the sense amplifier region, a first conductor pattern provided on the first insulation layer, an intermediate connection pattern provided on the first insulation layer in correspondence to the sense amplifier region, a spin-on-glass layer provided on the first insulation layer to extend over both the memory cell region and the sense amplifier region, and a projection part provided on the substrate of the sense amplifier region in correspondence to the intermediate connection pattern under the first insulation layer for lifting the level of the surface of the first insulation layer such that the intermediate interconnection pattern is exposed above the upper major surface of the spin-on-glass layer. Further, a second insulation layer is provided on the spin on glass layer to bury the first conductor pattern and the intermediate conductor pattern, and a contact hole is provided on the second insulation layer to expose the intermediate conductor pattern. The intermediate conductor pattern is connected electrically to a second conductor pattern provided on the second insulation layer via the contact hole.
摘要翻译：动态随机存取存储器包括存储单元区域和限定在衬底上的读出放大器区域，设置在半导体衬底上以覆盖存储单元区域和读出放大器区域的第一绝缘层，设置在第一层上的第一导体图案绝缘层，设置在与感测放大器区域对应的第一绝缘层上的中间连接图案，设置在第一绝缘层上以在存储单元区域和读出放大器区域上延伸的旋涂玻璃层，以及投影部分设置在感测放大器区域的基板上，与第一绝缘层下方的中间连接图案对应，用于提升第一绝缘层的表面的高度，使得中间互连图案暴露在第一绝缘层的上主表面上方旋涂玻璃层。此外，第二绝缘层设置在玻璃层上的自旋上以埋置第一导体图案和中间导体图案，并且在第二绝缘层上设置接触孔以暴露中间导体图案。中间导体图案经由接触孔电连接到设置在第二绝缘层上的第二导体图案。

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