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1. 发明授权

US08349081B2 Gas distributor with pre-chambers arranged in planes 有权
标题翻译：气体分配器，预先安置在飞机上
公开(公告)号：US08349081B2
公开(公告)日：2013-01-08
申请号：US11815091
申请日：2006-01-05
申请人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
发明人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/45574
摘要： A gas distributor for a CVD or OVPD reactor comprises two or more gas volumes (1, 2) into each of which opens a feed pipe (3, 4) for a process gas, each gas volume (1, 2) being connected to a plurality of corresponding process gas outlets (6, 7) which open into the bottom (5) of the gas distributor. In order to increase the homogeneity of the gas composition, the two gas volumes (1, 2) comprise pre-chambers (10, 10′, 11) located in a first common plane (8) and a plurality of gas distribution chambers (12, 13) each associated with a gas volume are provided in a second plane (9′) adjacent to the bottom of the gas distributor. The pre-chambers (10, 10′, 11) and gas distribution chambers (12, 13) associated with each gas volume (1, 2) are connected with connection channels (14, 15).
摘要翻译：用于CVD或OVPD反应器的气体分配器包括两个或更多个气体体积（1,2），每个气体体积（1,2）打开用于处理气体的进料管（3,4），每个气体体积（1,2）连接到多个对应的处理气体出口（6,7），其通向气体分配器的底部（5）。为了增加气体组成的均匀性，两个气体体积（1,2）包括位于第一公共平面（8）和多个气体分配室（12）中的预置室（10,10'，11），13）设置在与气体分配器的底部相邻的第二平面（9'）中。与每个气体体积（1,2）相关联的前室（10,10'，11）和气体分配室（12,13）与连接通道（14,15）连接。

2. 发明授权

US08298337B2 Gas inlet element for a CVD reactor 失效
标题翻译：用于CVD反应器的气体入口元件
公开(公告)号：US08298337B2
公开(公告)日：2012-10-30
申请号：US11814913
申请日：2006-01-05
申请人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
发明人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
IPC分类号： C23C16/00 , C23C16/44 , C23C16/455 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45512
摘要： The invention relates to a gas inlet element (2) for a CVD reactor with a chamber (4), which has a multitude of bottom-side outlet openings (23), via which a process gas introduced into the chamber (4) via edge-side access openings (10) exits into a process chamber (21) of the CVD reactor (1). In order to homogenize the gas composition, the invention provides that at least one mixing chamber arrangement (11, 12, 13) is situated upstream from the access openings (10), and at least two process gases are mixed with one another inside this mixing chamber arrangement.
摘要翻译：本发明涉及一种用于具有腔室（4）的CVD反应器的气体入口元件（2），其具有多个底部侧出口（23），经由该腔室（4）经由边缘引入腔室（4）的工艺气体（10）离开CVD反应器（1）的处理室（21）。为了均化气体组成，本发明提供了至少一个混合室装置（11,12,13）位于进入开口（10）的上游，并且至少两个处理气体在该混合中彼此混合室安排。

3. 发明申请

US20090025639A1 GAS INLET ELEMENT FOR A CVD REACTOR 失效
标题翻译：用于CVD反应器的气体入口元件
公开(公告)号：US20090025639A1
公开(公告)日：2009-01-29
申请号：US11814913
申请日：2006-01-05
申请人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
发明人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
IPC分类号： C23C16/54
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45512
摘要： The invention relates to a gas inlet element (2) for a CVD reactor with a chamber (4), which has a multitude of bottom-side outlet openings (23), via which a process gas introduced into the chamber (4) via edge-side access openings (10) exits into a process chamber (21) of the CVD reactor (1). In order to homogenize the gas composition, the invention provides that at least one mixing chamber arrangement (11, 12, 13) is situated upstream from the access openings (10), and at least two process gases are mixed with one another inside this mixing chamber arrangement.
摘要翻译：本发明涉及一种用于具有腔室（4）的CVD反应器的气体入口元件（2），其具有多个底部侧出口（23），经由该腔室（4）经由边缘（10）离开CVD反应器（1）的处理室（21）。为了均化气体组成，本发明提供了至少一个混合室装置（11,12,13）位于进入开口（10）的上游，并且至少两个处理气体在该混合中彼此混合室安排。

4. 发明申请

US20090013930A1 GAS DISTRIBUTOR WITH PRE-CHAMBERS DISPOSED IN PLANES 有权
标题翻译：配有预处理池的气体分配器
公开(公告)号：US20090013930A1
公开(公告)日：2009-01-15
申请号：US11815091
申请日：2006-01-05
申请人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
发明人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/45574
摘要： A gas distributor for a CVD or OVPD reactor comprises two or more gas volumes (1,2) into each of which opens a feed pipe (3,4) for a process gas, each gas volume (1,2) being connected to a plurality of corresponding provess gas outlets (6,7) which open into the bottom (5) of the gas distributor. In order to increase the homogeneity if the gas composition, the two gas volumes (1,2) comprose pre-chambers (10, 10′, 11) located in a first common plane (8) and a plurality of gas distribution chambers (12, 13) each associated with a gas volume are provided in a second plane (9) adjacent to the bottom of the gas distributor. The pre-chambers (10, 10′, 11) and gas distribution chambers (12, 13) associated with each gas volume (1,2) are connected with connection channels (14, 15).
摘要翻译：用于CVD或OVPD反应器的气体分配器包括两个或更多个气体体积（1,2），每个气体容积（1,2）打开用于处理气体的进料管（3,4），每个气体体积（1,2）连接到多个对应的气体出口（6,7），其通向气体分配器的底部（5）。为了增加气体组成的均匀性，两个气体体积（1,2）包括位于第一公共平面（8）和多个气体分配室（12）中的预先室（10,10'，11），13）设置在与气体分配器的底部相邻的第二平面（9）中。与每个气体体积（1,2）相关联的前室（10,10'，11）和气体分配室（12,13）与连接通道（14,15）连接。

5. 发明授权

US07709398B2 Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned 失效
标题翻译：使用两种处理气体沉积半导体层的方法和装置，其中一种是预处理的
公开(公告)号：US07709398B2
公开(公告)日：2010-05-04
申请号：US11262874
申请日：2005-10-31
申请人： Gerhard Karl Strauch , Johannes Kaeppeler , Markus Reinhold , Bernd Schulte
发明人： Gerhard Karl Strauch , Johannes Kaeppeler , Markus Reinhold , Bernd Schulte
IPC分类号： H01L21/31
CPC分类号： C23C16/45514 , C23C16/303 , C23C16/452 , C23C16/45574 , Y10S438/905
摘要： The invention relates to a method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder. The layer is comprised of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy. The first reaction gas flows in a direction toward the substrate holder through a multitude of openings, which are distributed over a surface of a gas inlet element, said surface being located opposite the substrate holder. According to the invention, the second process gas is preconditioned with a plasma before entering the process chamber, and it enters the process chamber at the edge of the substrate holder directly thereabove and flows parallel to the substrate holder surface.
摘要翻译：本发明涉及一种用于将至少一层，特别是半导体层沉积在至少一个衬底上的方法和装置，所述至少一个衬底位于反应器的处理室内，同时由衬底保持器支撑。该层由以固定的化学计量比提供的至少两种材料组分组成，其以第一和第二反应气体的形式引入反应器，并且一部分分解产物形成层，由此供应具有低热活化能的第一反应气体决定层的生长速率，并且具有高热活化能的第二反应气体被过量供应并且被预处理，特别是由独立的供应能源。第一反应气体通过分布在气体入口元件的表面上的多个开口朝向衬底保持器的方向流动，所述表面位于衬底保持器相对的位置。根据本发明，第二工艺气体在进入处理室之前用等离子体预处理，并且它直接进入衬底保持器的边缘处的处理室，并平行于衬底保持器表面流动。

6. 发明申请

US20090107401A1 DEVICE FOR VAPORIZING CONDENSED SUBSTANCES 审中-公开
标题翻译：用于蒸发稠化物质的装置
公开(公告)号：US20090107401A1
公开(公告)日：2009-04-30
申请号：US11722700
申请日：2005-12-16
申请人： Markus Reinhold , Gerhard Karl Strauch , Markus Gersdorff , Nico Meyer , Florenz Kittle
发明人： Markus Reinhold , Gerhard Karl Strauch , Markus Gersdorff , Nico Meyer , Florenz Kittle
IPC分类号： C23C16/448
CPC分类号： C23C14/228 , B01B1/005 , C23C14/243 , H01L51/0008 , H01L51/56
摘要： The invention relates to a device for the vaporisation of condensed (solid or liquid) materials, in particular, of starting materials for OLED production, comprising a container (1), for housing the material with a gas supply line (2) and a gas exhaust line (3). A number of inserts (4) for housing the material are arranged in the container (1) which have an individual flow thereover, whereby the inserts (4) are arranged one over the other in the vertical direction and comprise recesses (5) for housing the material in the horizontal direction over which a flow is possible. Several gas flows may flow in parallel over several inserts.
摘要翻译：本发明涉及一种用于蒸发冷凝（固体或液体）材料，特别是用于OLED生产的起始材料的装置，其包括容器（1），用于将材料与气体供应管线（2）和气体排气管（3）。用于容纳材料的多个插入件（4）布置在容器（1）中，其中具有单独的流动，由此插入件（4）在垂直方向上彼此重叠地布置，并且包括用于容纳的凹部（5）在水平方向上的材料可以在其上流动。几个气体流可以平行流过几个插入物。

7. 发明申请

US20100012034A1 Process And Apparatus For Depositing Semiconductor Layers Using Two Process Gases, One Of Which is Preconditioned 审中-公开
标题翻译：用于使用两种工艺气体沉积半导体层的工艺和装置，其中一种是预处理的
公开(公告)号：US20100012034A1
公开(公告)日：2010-01-21
申请号：US12567357
申请日：2009-09-25
申请人： Gerhard Karl Strauch , Johannes Kaeppeler , Markus Reinhold , Bernd Schulte
发明人： Gerhard Karl Strauch , Johannes Kaeppeler , Markus Reinhold , Bernd Schulte
IPC分类号： C23C16/513 , C23C16/46
CPC分类号： C23C16/45514 , C23C16/303 , C23C16/452 , C23C16/45574 , Y10S438/905
摘要： A method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder, is provided. The layer includes of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy.
摘要翻译：提供了一种用于将至少一层，特别是半导体层沉积在至少一个衬底上的方法和装置，所述至少一个衬底位于反应器的处理室内，同时由衬底保持器支撑。该层包括以固定化学计量比提供的至少两种材料组分，其以第一和第二反应气体的形式引入反应器中，并且一部分分解产物形成该层，由此，具有低热活化能的第一反应气体确定了该层的生长速率，并且具有高热活化能的第二反应气体被过量供应并且被预处理，特别是通过独立供应的能量。

8. 发明申请

US20090283040A1 DEVICE FOR TEMPERATURE-CONTROLLED ACCOMMODATION OF A CONTAINER 审中-公开
标题翻译：集装箱温度控制装置
公开(公告)号：US20090283040A1
公开(公告)日：2009-11-19
申请号：US11722071
申请日：2005-12-06
申请人： Markus Reinhold , Gerhard Karl Strauch
发明人： Markus Reinhold , Gerhard Karl Strauch
IPC分类号： C23C16/54
CPC分类号： C23C14/228 , C23C14/22 , C23C16/4481
摘要： The invention relates to a device for the tempered storage of a container (19) for receiving condensed materials that are transported out of the container (19) by evaporation by means of a carrier gas guided through the container. Said device comprises a housing (3) forming a chamber (25), the wall (3) of said housing being embodied in a heat-insulating manner, a passage (20, 21) in the housing wall (3) for a gas supply line or gas evacuation line (17, 18) to, or from, the container (19) arranged in the chamber (25), and a heating (16) or cooling system for tempering the chamber (25). The invention is characterised in that a gas flow producer (4) and the gas flow guiding means (5-10) guiding the gas flow produced by the gas flow producer (4) are provided in the chamber (25), the gas flow produced by the gas flow producer and formed by the gas flow guiding means (5-10) being heated by the heating system (16) and flowing alongside the container (19).
摘要翻译：本发明涉及一种用于容器（19）的回火储存的装置，用于接收冷凝材料，所述冷凝材料通过通过所述容器引导的载体气体通过蒸发被输送出所述容器（19）。所述装置包括形成腔室（25）的壳体（3），所述壳体的壁（3）以绝热方式体现，所述壳体壁（3）中用于供气的通道（20,21）线路或排气管线（17,18）到设置在所述腔室（25）中的容器（19）或从所述腔室（25）中布置的容器（19），以及用于回火所述腔室（25）的加热（16）或冷却系统。本发明的特征在于，在室（25）中设置有气流生成器（4）和引导由气流发生器（4）产生的气流的气流引导装置（5-10），产生气流由气体流动产生器形成并由气体流动引导装置（5-10）形成，被加热系统（16）加热并沿着容器（19）流动。

9. 发明授权

US09568014B2 Gas system for compressing a process gas 有权
标题翻译：用于压缩工艺气体的气体系统
公开(公告)号：US09568014B2
公开(公告)日：2017-02-14
申请号：US13980338
申请日：2012-01-26
申请人： Ludger Alfes , Klaus Eisele , Thomas Mönk , Markus Reinhold , Axel Spanel
发明人： Ludger Alfes , Klaus Eisele , Thomas Mönk , Markus Reinhold , Axel Spanel
IPC分类号： F01D1/12 , F04D29/08 , F04D17/12 , F04D29/10 , F16J15/40 , B01D53/14
CPC分类号： F04D29/08 , B01D53/1475 , F04D17/12 , F04D29/104 , F16J15/406 , Y02E20/326
摘要： A gas system has a first compressor stage for compressing a process gas. The first compressor stage includes an intake side and a pressure side. A seal gas is provided outside the first compressor stage in order to prevent process gas from issuing from leaks in the first compressor stage, having at least one second line for returning a gas mixture issuing from the gas system, this mixture including at least of process gas and seal gas. The at least one second line is configured for returning the issuing gas mixture to the intake side of the first compressor stage and/or to a location in the gas system upstream of the first compressor stage.
摘要翻译：气体系统具有用于压缩处理气体的第一压缩机级。第一压缩机级包括进气侧和压力侧。在第一压缩机级外部设置密封气体，以防止处理气体从第一压缩机级中泄漏出来，具有至少一条用于返回从气体系统发出的气体混合物的第二管线，该混合物至少包括过程气体和密封气体。所述至少一条第二管线被配置为将发出的气体混合物返回到第一压缩机级的进气侧和/或将第一压缩机级的上游的气体系统中的位置返回。

10. 发明申请

US20140050569A1 GAS SYSTEM FOR COMPRESSING A PROCESS GAS 有权
标题翻译：用于压缩过程气体的气体系统
公开(公告)号：US20140050569A1
公开(公告)日：2014-02-20
申请号：US13980338
申请日：2012-01-26
申请人： Ludger Alfes , Klaus Eisele , Thomas Mönk , Markus Reinhold , Axel Spanel
发明人： Ludger Alfes , Klaus Eisele , Thomas Mönk , Markus Reinhold , Axel Spanel
IPC分类号： F04D29/08
CPC分类号： F04D29/08 , B01D53/1475 , F04D17/12 , F04D29/104 , F16J15/406 , Y02E20/326
摘要： A gas system has a first compressor stage for compressing a process gas. The first compressor stage includes an intake side and a pressure side. A seal gas is provided outside the first compressor stage in order to prevent process gas from issuing from leaks in the first compressor stage, having at least one second line for returning a gas mixture issuing from the gas system, this mixture including at least of process gas and seal gas. The at least one second line is configured for returning the issuing gas mixture to the intake side of the first compressor stage and/or to a location in the gas system upstream of the first compressor stage.
摘要翻译：气体系统具有用于压缩处理气体的第一压缩机级。第一压缩机级包括进气侧和压力侧。在第一压缩机级外部设置密封气体，以防止处理气体从第一压缩机级中泄漏出来，具有至少一条用于返回从气体系统发出的气体混合物的第二管线，该混合物至少包括过程气体和密封气体。所述至少一条第二管线被配置为将发出的气体混合物返回到第一压缩机级的进气侧和/或将第一压缩机级的上游的气体系统中的位置返回。

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