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1. 发明授权

US06380074B1 Deposition of various base layers for selective layer growth in semiconductor production 有权
标题翻译：在半导体生产中沉积各种基层用于选择性层生长
公开(公告)号：US06380074B1
公开(公告)日：2002-04-30
申请号：US09666526
申请日：2000-09-18
申请人： Markus Kirchhoff , Hans-Peter Sperlich , Uwe Schilling , Zvonimir Gabric , Oswald Spindler , Stephan Wege , Hans Glawischnig
发明人： Markus Kirchhoff , Hans-Peter Sperlich , Uwe Schilling , Zvonimir Gabric , Oswald Spindler , Stephan Wege , Hans Glawischnig
IPC分类号： H01L214763
CPC分类号： H01L21/02129 , H01L21/02304 , H01L21/31612 , H01L21/31625 , H01L21/3185 , H01L21/76262
摘要： A method for the shrink-hole-free filling of trenches in semiconductor circuits which utilizes selective growth of a layer to be applied is described. In the method, a layer of a selective growing material is applied simultaneously to a growth-promoting layer and to a growth-inhibiting layer. Wherein raised portions which, before the layer of selective growing material is applied, are covered by the growth-inhibiting layer at least on their sides. After the growth-inhibiting layer has been applied, the growth-promoting layer is generated by anisotropic treatment on surfaces parallel to the substrate on and between the raised portions and the layer is then removed again on surfaces parallel to the substrate on the raised portions. The method makes it possible to produce in a particularly simple manner a pattern on the raised portions of which are covered by the growth-inhibiting layer on their sides and on their top whereas the bottom of trenches is covered with a growth-promoting layer.
摘要翻译：描述了一种采用半导体电路中的无收缩空穴填充的方法，其利用被施加层的选择性生长。在该方法中，选择性生长材料层同时施加到生长促进层和生长抑制层。其中在施加选择性生长材料层之前至少在其侧面被生长抑制层覆盖的凸起部分。在施加生长抑制层之后，通过各向异性处理在凸起部分之间和之间平行于衬底的表面产生生长促进层，然后再次在凸起部分上平行于衬底的表面上去除该层。该方法使得可以以特别简单的方式产生其隆起部分上的生长抑制层在其侧面和顶部覆盖的图案，而沟槽的底部被生长促进层覆盖。

2. 发明授权

US06624042B2 Fabrication process for a semiconductor component 有权
标题翻译：半导体元件的制造工艺
公开(公告)号：US06624042B2
公开(公告)日：2003-09-23
申请号：US09893352
申请日：2001-06-27
申请人： Uwe Schilling
发明人： Uwe Schilling
IPC分类号： H01L2176
CPC分类号： H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/31612 , H01L27/1087
摘要： A process for fabricating a semiconductor component includes providing a trench in a substrate and depositing a liner layer on the resulting structure using a nonconformal deposition process. This results in the liner layer being significantly smaller at the trench walls and base than on the substrate surface. An insulating layer is provided on the resulting structure by a conformal deposition process. The insulating layer is then anisotropically etched to remove the insulating layer from a region of the trench base.
摘要翻译：制造半导体部件的工艺包括在衬底中提供沟槽并使用非共形沉积工艺在所得结构上沉积衬层。这导致衬里层在沟槽壁和基底处比在衬底表面上显着更小。通过保形沉积工艺在所得结构上提供绝缘层。然后对绝缘层进行各向异性蚀刻以从沟槽基底的区域去除绝缘层。

3. 发明授权

US06716678B2 Method for producing an antifuse and antifuse for the selective electrical connection of adjacent conductive regions 失效
标题翻译：用于制造用于相邻导电区域的选择性电连接的反熔丝和反熔丝的方法
公开(公告)号：US06716678B2
公开(公告)日：2004-04-06
申请号：US10378243
申请日：2003-03-03
申请人： Matthias Lehr , Uwe Schilling , Veronika Polei , Irene Sperl
发明人： Matthias Lehr , Uwe Schilling , Veronika Polei , Irene Sperl
IPC分类号： H01L2182
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/00
摘要： A method for producing antifuse structures and antifuses by which adjacent conductive regions can be selectively electrically connected involve the application of a sacrificial layer to a first conductive region. The sacrificial layer is patterned with the aid of a photolithographic method. A fuse layer is applied and the sacrificial layer is then removed. A non-conductive layer is applied and a conductive material is introduced in an opening in the non-conductive layer for the purpose of forming a second conductive region.
摘要翻译：用于制造反熔丝结构和反熔丝的方法，通过其可以选择性地电连接相邻导电区域，涉及将牺牲层施加到第一导电区域。借助于光刻方法对牺牲层进行图案化。施加熔丝层，然后去除牺牲层。施加非导电层，并且为了形成第二导电区域，在非导电层中的开口中引入导电材料。

4. 发明授权

US06821863B2 Method for producing a cavity in a monocrystalline silicon substrate and a semiconductor component having a cavity in a monocrystalline silicon substrate with an epitaxial covering layer 失效
标题翻译：在单晶硅衬底中制造空腔的方法和在具有外延层的单晶硅衬底中具有空腔的半导体组件
公开(公告)号：US06821863B2
公开(公告)日：2004-11-23
申请号：US10348150
申请日：2003-01-21
申请人： Martin Popp , Dietmar Temmler , Kristin Schupke , Uwe Schilling , Kerstin Pomplun
发明人： Martin Popp , Dietmar Temmler , Kristin Schupke , Uwe Schilling , Kerstin Pomplun
IPC分类号： H01L2176
CPC分类号： H01L27/10861 , H01L27/10832 , H01L27/1087
摘要： A semiconductor component has a cavity formed in a monocrystalline silicon substrate. The wall of the cavity is covered by a cover layer, at least in an upper collar region, and a covering layer is then applied to the surface of the silicon substrate using a selective epitaxial growth method. The cavity is thereby covered in the process. The method is physically simple and can be carried out cost-effectively. In particular, the described method can be used in order to cover a trench prior to high-temperature processes during the production of a DRAM memory, and to open the trench once again after the high-temperature processes, in order to provide a trench capacitor.
摘要翻译：半导体元件具有形成在单晶硅衬底中的空腔。至少在上衣领区中，空腔的壁被覆盖层覆盖，然后使用选择性外延生长法将覆盖层施加到硅衬底的表面。因此在该过程中覆盖空腔。该方法物理上简单，可以经济有效地进行。特别地，可以使用所描述的方法来在DRAM存储器的制造期间在高温处理之前覆盖沟槽，并且在高温处理之后再次打开沟槽，以便提供沟槽电容器。

5. 发明授权

US06898519B1 Navigation system with extended display function 失效
标题翻译：具有扩展显示功能的导航系统
公开(公告)号：US06898519B1
公开(公告)日：2005-05-24
申请号：US09663088
申请日：2000-09-15
申请人： Uwe Schilling
发明人： Uwe Schilling
IPC分类号： G01S19/48 , G08G1/0962 , G08G1/0967 , G08G1/123
CPC分类号： G08G1/096716 , G01C21/3632 , G01C21/3697 , G08G1/096758 , G08G1/096783
摘要： The invention relates to navigation systems for motor vehicles, in which route planning information is output via a monitor (3). Data records containing map data are stored in a storage element (5). According to the invention, the storage element (5) stores information regarding traffic restrictions which is part of a data record of the map data, and the traffic restrictions relevant to the ascertained vehicle position can additionally be displayed on the monitor (3). Furthermore, in one specific embodiment, time restrictions for traffic restrictions are likewise stored and only the traffic restrictions which are applicable at the present time are displayed.
摘要翻译：本发明涉及用于机动车辆的导航系统，其中通过监视器（3）输出路线规划信息。包含地图数据的数据记录存储在存储元件（5）中。根据本发明，存储元件（5）存储关于作为地图数据的数据记录的一部分的交通限制的信息，并且可以在监视器（3）上另外显示与所确定的车辆位置相关的交通限制。此外，在一个具体实施例中，同样存储了用于业务限制的时间限制，并且仅显示当前适用的业务限制。

6. 发明授权

US5873557A Device for supporting objects so as to be rotatable about an axis of rotation 失效
标题翻译：用于支撑物体以便围绕旋转轴线旋转的装置
公开(公告)号：US5873557A
公开(公告)日：1999-02-23
申请号：US909274
申请日：1997-08-11
申请人： Uwe Schilling , Martin Rudolph , Stefan Voit
发明人： Uwe Schilling , Martin Rudolph , Stefan Voit
IPC分类号： B60R11/02 , B60K35/00 , F16C11/10 , F16M11/08 , A47B91/100
CPC分类号： F16M11/041 , B60K35/00 , F16M11/08 , F16M2200/08
摘要： The invention relates to a device for supporting objects (1) so as to be rotatable about an axis of rotation (2), particularly, display devices in motor vehicles.The object of realizing such a device which is simple and cheap and which enables the object to be removed simply and rapidly, is achieved in that there has been provided a basic body (4) having a recess (14) which is open in a radialdirection, there has been provided a rotary body (3) adapted to be slid into the recess (14) in a radial direction and to be rotatable in the recess (14),there has been provided a locking bracket (9) by means of which the rotary body (3) can be locked against radial movement in the recess (14), andthe rotary body (3) can be locked in rotation to the object (1) in such a manner that the rotary body (3) is rotated when the object (1) is rotated in the basic body (4).
摘要翻译：本发明涉及一种用于支撑物体（1）以便围绕旋转轴线（2）旋转的装置，特别是机动车辆中的显示装置。实现这种简单便宜并能够简单快速地去除物体的装置的目的是实现的，因为已经提供了一种具有在径向开口的凹部（14）的基体（4）已经提供了一种旋转体（3），其适于在径向方向上滑动到凹部（14）中并且能够在凹部（14）中旋转，通过以下方式设置有锁定支架（9）：锁定支架所述旋转体（3）能够在所述凹部（14）中抵抗径向移动而被锁定，并且所述旋转体（3）可以以使得所述旋转体（3）为当物体（1）在基体（4）中旋转时旋转。

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