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1. 发明授权

US07447140B2 Ferroelectric probe storage apparatus 失效
标题翻译：铁电探头存储装置
公开(公告)号：US07447140B2
公开(公告)日：2008-11-04
申请号：US10902910
申请日：2004-07-30
申请人： Mark Ian Lutwyche , Earl Chrzaszcz Johns , Martin Gerard Forrester , Mark David Bedillion , Andreas Karl Roelofs , Joachim Walter Ahner , Robert Earl Rottmayer , Andre Y L Liem , Edward S. Skalko , Xueshi Yang
发明人： Mark Ian Lutwyche , Earl Chrzaszcz Johns , Martin Gerard Forrester , Mark David Bedillion , Andreas Karl Roelofs , Joachim Walter Ahner , Robert Earl Rottmayer , Andre Y L Liem , Edward S. Skalko , Xueshi Yang
IPC分类号： G11B9/00
CPC分类号： G11B9/02
摘要： An apparatus comprises a ferroelectric storage medium, and a transducer for reading data from the ferroelectric storage medium and for writing data to the ferroelectric storage medium, wherein the transducer includes a substrate and a probe coupled to the substrate, wherein the probe includes a conductive element and a bilayer structure causing the probe to bend toward the ferroelectric storage medium.
摘要翻译：一种装置包括铁电存储介质和用于从铁电存储介质读取数据并将数据写入铁电存储介质的换能器，其中换能器包括基板和耦合到基板的探针，其中探针包括导电元件以及使探针朝向铁电存储介质弯曲的双层结构。

2. 发明授权

US08227701B2 Reconfigurable electric circuitry and method of making same 有权
标题翻译：可重构电路及其制作方法
公开(公告)号：US08227701B2
公开(公告)日：2012-07-24
申请号：US12359386
申请日：2009-01-26
申请人： Stephen John Wrazien , Florin Zavaliche , Joachim Walter Ahner , Tong Zhao , Martin Gerard Forrester , Shan Hu
发明人： Stephen John Wrazien , Florin Zavaliche , Joachim Walter Ahner , Tong Zhao , Martin Gerard Forrester , Shan Hu
IPC分类号： H05K1/03
CPC分类号： H01G4/33 , B82Y10/00 , G11C11/22 , H01G7/06 , H01L21/28291 , H01L27/20 , H01L29/516 , H01L29/6684 , H01L29/78391
摘要： A reconfigurable electric circuit includes first and second crystalline material layers positioned adjacent to each other and forming a first interface, and a first ferroelectric layer positioned adjacent to the first crystalline material layer and having ferroelectric domains applying an electric field to regions of the first interface to induce a quasi two-dimensional electron gas in the regions, wherein at least one of the regions forms a gate and at least one of the regions forms a channel.
摘要翻译：可重构电路包括彼此相邻并形成第一界面的第一和第二晶体材料层，以及邻近第一晶体材料层定位并且具有向第一界面的区域施加电场的铁电畴的第一铁电层，在区域中诱发准二维电子气，其中至少一个区域形成栅极，并且至少一个区域形成沟道。

3. 发明申请

US20100187583A1 Reconfigurable Electric Circuitry and Method of Making Same 有权
标题翻译：可重构电路及其制作方法
公开(公告)号：US20100187583A1
公开(公告)日：2010-07-29
申请号：US12359386
申请日：2009-01-26
申请人： Stephen John Wrazien , Florin Zavaliche , Joachim Walter Ahner , Tong Zhao , Martin Gerard Forrester , Shan Hu
发明人： Stephen John Wrazien , Florin Zavaliche , Joachim Walter Ahner , Tong Zhao , Martin Gerard Forrester , Shan Hu
IPC分类号： H01L29/78 , H01L43/00 , H01G4/20
CPC分类号： H01G4/33 , B82Y10/00 , G11C11/22 , H01G7/06 , H01L21/28291 , H01L27/20 , H01L29/516 , H01L29/6684 , H01L29/78391
摘要： A reconfigurable electric circuit includes first and second crystalline material layers positioned adjacent to each other and forming a first interface, and a first ferroelectric layer positioned adjacent to the first crystalline material layer and having ferroelectric domains applying an electric field to regions of the first interface to induce a quasi two-dimensional electron gas in the regions, wherein at least one of the regions forms a gate and at least one of the regions forms a channel.
摘要翻译：可重构电路包括彼此相邻并形成第一界面的第一和第二晶体材料层，以及邻近第一晶体材料层定位并且具有向第一界面的区域施加电场的铁电畴的第一铁电层，在区域中诱发准二维电子气，其中至少一个区域形成栅极，并且至少一个区域形成沟道。

4. 发明申请

US20080075980A1 Epitaxial ferroelectric and magnetic recording structures including graded lattice matching layers 有权
标题翻译：外延铁电磁记录结构包括梯度格子匹配层
公开(公告)号：US20080075980A1
公开(公告)日：2008-03-27
申请号：US11526413
申请日：2006-09-25
申请人： Thomas Francis Ambrose , Joachim Walter Ahner , Kai-Chieh Chang , Maissarath Nassirou , Robert Hempstead , Mark Lutwyche
发明人： Thomas Francis Ambrose , Joachim Walter Ahner , Kai-Chieh Chang , Maissarath Nassirou , Robert Hempstead , Mark Lutwyche
IPC分类号： G11B5/66
CPC分类号： G11B5/64 , G11B5/732 , G11B5/7325
摘要： Epitaxial ferroelectric and magnetic recording structures having graded lattice matching layers are disclosed. A single crystal material such as Si may be used as a substrate material upon which the graded lattice matching layers are deposited. The lattice matching layers may comprise metals and metal alloys, or may comprise oxides doped with selected elements or deposited under different oxygen pressures. A recording layer, such as ferroelectric lead zirconium titanate or a magnetic Fe/Pt multilayer structure, is deposited on the graded lattice matching layers.
摘要翻译：公开了具有分级晶格匹配层的外延铁电和磁记录结构。可以使用诸如Si的单晶材料作为沉积了渐变晶格匹配层的衬底材料。晶格匹配层可以包括金属和金属合金，或者可以包括掺杂有选定元素或在不同氧气压力下沉积的氧化物。诸如铁电铅钛酸锆或磁性Fe / Pt多层结构的记录层沉积在渐变的晶格匹配层上。

5. 发明授权

US07026676B2 Memory array having a layer with electrical conductivity anisotropy 失效
标题翻译：具有导电各向异性层的存储器阵列
公开(公告)号：US07026676B2
公开(公告)日：2006-04-11
申请号：US10879670
申请日：2004-06-29
申请人： Joachim Walter Ahner , Jun Yu , Dieter Klaus Weller
发明人： Joachim Walter Ahner , Jun Yu , Dieter Klaus Weller
IPC分类号： H01L29/76
CPC分类号： G11B9/02 , G11B9/04
摘要： A memory array includes a memory layer that has hysteretic domains with domain axes extending between first and second memory layer surfaces. A conductive layer on the first memory layer surface has anisotropically increased electrical conductivity in a thickness direction. A movable conductive probe has a contact area on the conductive layer and moves to access a selected hysteretic domain.
摘要翻译：存储器阵列包括具有在第一和第二存储器层表面之间延伸的域轴的滞后域的存储器层。第一存储层表面上的导电层在厚度方向上具有各向异性增加的导电性。可移动导电探针在导电层上具有接触区域，并移动以接近选定的滞后区域。

6. 发明授权

US07541105B2 Epitaxial ferroelectric and magnetic recording structures including graded lattice matching layers 有权
标题翻译：外延铁电磁记录结构包括梯度格子匹配层
公开(公告)号：US07541105B2
公开(公告)日：2009-06-02
申请号：US11526413
申请日：2006-09-25
申请人： Thomas Francis Ambrose , Joachim Walter Ahner , Kai-Chieh Chang , Maissarath Nassirou , Robert Hempstead , Mark Lutwyche
发明人： Thomas Francis Ambrose , Joachim Walter Ahner , Kai-Chieh Chang , Maissarath Nassirou , Robert Hempstead , Mark Lutwyche
IPC分类号： G11B5/66
CPC分类号： G11B5/64 , G11B5/732 , G11B5/7325
摘要： Epitaxial ferroelectric and magnetic recording structures having graded lattice matching layers are disclosed. A single crystal material such as Si may be used as a substrate material upon which the graded lattice matching layers are deposited. The lattice matching layers may comprise metals and metal alloys, or may comprise oxides doped with selected elements or deposited under different oxygen pressures. A recording layer, such as ferroelectric lead zirconium titanate or a magnetic Fe/Pt multilayer structure, is deposited on the graded lattice matching layers.
摘要翻译：公开了具有分级晶格匹配层的外延铁电和磁记录结构。可以使用诸如Si的单晶材料作为沉积了渐变晶格匹配层的衬底材料。晶格匹配层可以包括金属和金属合金，或者可以包括掺杂有选定元素或在不同氧压下沉积的氧化物。诸如铁电铅钛酸锆或磁性Fe / Pt多层结构的记录层沉积在渐变的晶格匹配层上。

7. 发明申请

US20080286587A1 Apparatus Having Electric Circuitry and Method of Making Same 审中-公开
标题翻译：具有电路的设备及其制作方法
公开(公告)号：US20080286587A1
公开(公告)日：2008-11-20
申请号：US11749368
申请日：2007-05-16
申请人： Joachim Walter Ahner , Florin Zavaliche
发明人： Joachim Walter Ahner , Florin Zavaliche
IPC分类号： B32B15/04 , B05D5/12 , B32B9/04
CPC分类号： H01L29/267 , B82Y10/00 , H01L29/122 , H01L29/24 , Y10T428/31504
摘要： An apparatus includes a first crystalline material layer, a second crystalline material layer positioned adjacent to the first crystalline material layer to form an electron gas, a first interface, and a first ferroelectric layer having ferroelectric domains that apply an electric field to portions of the first interface. A method of making the apparatus is also provided.
摘要翻译：一种装置包括：第一结晶材料层，邻近第一结晶材料层定位的第二晶体材料层以形成电子气体;第一界面;以及具有铁电畴的第一铁电层，接口。还提供了制造该装置的方法。

8. 发明授权

US07638211B2 Mass storage apparatus using fluorine mediated self-assembly monolayers of nanoparticles recording medium 失效
标题翻译：使用氟介导的纳米粒子记录介质的自组装单层的大容量存储装置
公开(公告)号：US07638211B2
公开(公告)日：2009-12-29
申请号：US11055004
申请日：2005-02-09
申请人： Joachim Walter Ahner , Nisha Shukla , Dieter Weller
发明人： Joachim Walter Ahner , Nisha Shukla , Dieter Weller
IPC分类号： G11B5/66
CPC分类号： B82Y10/00 , B82Y30/00 , G11B5/65 , G11B5/732 , G11B5/7325 , G11B5/84
摘要： A magnetic recording medium for high-density recording, having a doped interlayer to preserve the uniformity and ordering of the magnetic nanoparticles in its recording layer. The interlayer is doped with a high electronegativity material. The dopant atoms in the interlayer interact with the ferromagnetic nanoparticles to promote the formation of a homogeneous, ordered monolayer of nanoparticles in the recording layer. In addition, the high electronegative property of the dopant atoms holds the nanoparticles in place during the subsequent annealing process to prevent sintering and disordering damage. In one embodiment, the dopant is a halogen or non-halogen material having a high electronegativity, which is not polymerized to the matrix material in the interlayer. The matrix material may be polymerized. An example of a doped interlayer is a fluorinated carbon film.
摘要翻译：一种用于高密度记录的磁记录介质，具有掺杂中间层以保持其记录层中磁性纳米颗粒的均匀性和有序性。中间层掺杂有高电负性材料。夹层中的掺杂剂原子与铁磁性纳米粒子相互作用以促进在记录层中形成均匀的，有序的单层纳米颗粒。此外，掺杂剂原子的高电负性在随后的退火过程中将纳米颗粒保持在适当位置，以防止烧结和无序损伤。在一个实施方案中，掺杂剂是具有高电负性的卤素或非卤素材料，其不与中间层中的基质材料聚合。基质材料可以聚合。掺杂中间层的实例是氟化碳膜。

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