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1. 发明申请

US20160350303A1 Management Of Structured, Non-Structured, And Semi-Structured Data In A Multi-Tenant Environment 审中-公开
标题翻译：多租户环境中结构化，非结构化和半结构化数据管理
公开(公告)号：US20160350303A1
公开(公告)日：2016-12-01
申请号：US14722403
申请日：2015-05-27
申请人： Mark Fischer , Prakash Khot , Daniel Philip Arcari
发明人： Mark Fischer , Prakash Khot , Daniel Philip Arcari
IPC分类号： G06F17/30
CPC分类号： G06F16/284 , G06F16/2452 , G06F16/9024
摘要： Disclosed is a network of systems that includes plural disparate storage systems that store user data, the disparate storage systems including NoSQL server databases that provide storage and retrieval of data modeled in forms besides tabular relations used in relational databases, and index storage system, a relational graph storage system and one or more data storage query platforms in communication with the plural disparate storage that have queries produced in a modeling language that abstracts application programmer functionality from network functionality.
摘要翻译：公开了一种系统网络，其包括存储用户数据的多个不同的存储系统，不同的存储系统包括NoSQL服务器数据库，其提供除了在关系数据库中使用的表格关系之外的形式的建模的数据的存储和检索，以及索引存储系统图形存储系统和与多个不同存储器通信的一个或多个数据存储查询平台，其具有以建模语言生成的查询，其将应用程序编程器功能从网络功能抽象出来。

2. 发明申请

US20160350091A1 Mechanisms For Declarative Expression Of Data Types For Data Storage 有权
标题翻译：用于数据存储的数据类型的声明式表达的机制
公开(公告)号：US20160350091A1
公开(公告)日：2016-12-01
申请号：US14722351
申请日：2015-05-27
申请人： Prakash Khot , Mark Fischer , Daniel Philip Arcari
发明人： Prakash Khot , Mark Fischer , Daniel Philip Arcari
IPC分类号： G06F9/45 , G06F9/44
CPC分类号： G06F8/51 , G06F3/06 , G06F8/315 , G06F8/35 , G06F8/36 , G06F9/44505
摘要： Computer implemented techniques for storage management include transforming file instances using a modeling language platform that includes a language grammar and a set of language processing rules to transform instances of an entity written in the language grammar into a platform independent code and artifact files and auto-generating by the modeling language platform code to recognize and process input in a given language to deconstruct file instances into pieces that allow further discrete operations to be performed on the file instances.
摘要翻译：用于存储管理的计算机实现技术包括使用包括语言语法和一组语言处理规则的建模语言平台来转换文件实例，以将以语言语法编写的实体的实例转换为独立于平台的代码和工件文件和自动生成通过建模语言平台代码来识别和处理给定语言中的输入，以将文件实例解构为允许对文件实例执行进一步离散操作的部分。

3. 发明授权

US10824636B2 Mechanisms for querying disparate data storage systems 有权
公开(公告)号：US10824636B2
公开(公告)日：2020-11-03
申请号：US14722330
申请日：2015-05-27
申请人： Mark Fischer , Prakash Khot , Dilip Kumar Vedula , Tong Zhao , Siva Prakash Ragavan , Joseph Paquette
发明人： Mark Fischer , Prakash Khot , Dilip Kumar Vedula , Tong Zhao , Siva Prakash Ragavan , Joseph Paquette
IPC分类号： G06F16/25 , G06F16/2455 , G06F16/2458 , G06F16/2452 , G06F16/27
摘要： Computer implemented techniques for storage management include receiving a query from an application within an application level, which is received as a standard syntax wrapped query language query, with the standard syntax wrapped query having as a parameter, an identifier to a specific object, determining a platform type on which the received query is executable and translating the standard syntax wrapped query language query into the determined native query language used by the determined data storage platform type.

4. 发明申请

US20160350367A1 Mechanisms For Querying Disparate Data Storage Systems 审中-公开
标题翻译：查询不同数据存储系统的机制
公开(公告)号：US20160350367A1
公开(公告)日：2016-12-01
申请号：US14722330
申请日：2015-05-27
申请人： Mark Fischer , Prakash Khot , Dilip Kumar Vedula , Tong Zhao , Siva Prakash Ragavan , Joseph Paquette
发明人： Mark Fischer , Prakash Khot , Dilip Kumar Vedula , Tong Zhao , Siva Prakash Ragavan , Joseph Paquette
IPC分类号： G06F17/30
摘要： Computer implemented techniques for storage management include receiving a query from an application within an application level, which is received as a standard syntax wrapped query language query, with the standard syntax wrapped query having as a parameter, an identifier to a specific object, determining a platform type on which the received query is executable and translating the standard syntax wrapped query language query into the determined native query language used by the determined data storage platform type.
摘要翻译：用于存储管理的计算机实现的技术包括从作为标准语法包装的查询语言查询接收的应用程序级的应用程序接收查询，标准语法包装查询具有作为参数的标识符，特定对象的标识符，接收到的查询可执行的平台类型，并将标准语法包装查询语言查询转换为由确定的数据存储平台类型使用的确定的本机查询语言。

5. 发明授权

US08954173B1 Method and apparatus for profiling and identifying the source of a signal 有权
标题翻译：用于分析和识别信号源的方法和装置
公开(公告)号：US08954173B1
公开(公告)日：2015-02-10
申请号：US12203739
申请日：2008-09-03
申请人： Mark Fischer
发明人： Mark Fischer
IPC分类号： G06F17/00 , G01V1/00 , G06F17/15 , G06G7/12 , G06K9/00 , G10L17/26 , G06F17/14 , A01K29/00
CPC分类号： G06F17/148 , A01K29/005 , A61B5/726 , G06K9/00516 , G06K9/00536 , G10L17/26 , H04N19/63
摘要： A method and apparatus for profiling and identifying the source of a signal is provided. A first method includes receiving a signal produced by a known source and creating a matrix of wavelet coefficients corresponding to a wavelet transform of the signal. The method also includes profiling the signal according to an output of a wavelet transform utilizing a particular base function and a particular scale set. A second method includes performing a wavelet transform having a particular profile on a received signal and determining the presence of a particular signal-producing entity as a function of wavelet coefficients exceeding a threshold. An apparatus includes a receiver configured to receive a signal and a processor coupled to the receiver, such that the processor is configured to perform wavelet transforms on the signals. A database is coupled to the processor and configured to store wavelet transform profiles.
摘要翻译：提供了一种用于分析和识别信号源的方法和装置。第一种方法包括接收由已知源产生的信号并产生对应于信号的小波变换的小波系数矩阵。该方法还包括根据使用特定基本函数和特定比例集的小波变换的输出对信号进行分析。第二种方法包括在接收到的信号上执行具有特定分布的小波变换，并且确定特定信号产生实体的存在作为超过阈值的小波系数的函数。一种装置包括被配置为接收信号的接收机和耦合到接收机的处理器，使得处理器被配置为对信号执行小波变换。数据库耦合到处理器并被配置为存储小波变换简档。

6. 发明授权

US08883575B2 Processes and apparatus having a semiconductor fin 有权
标题翻译：具有半导体散热片的方法和装置
公开(公告)号：US08883575B2
公开(公告)日：2014-11-11
申请号：US13440383
申请日：2012-04-05
申请人： Mark Fischer , T. Earl Allen , H. Montgomery Manning
发明人： Mark Fischer , T. Earl Allen , H. Montgomery Manning
IPC分类号： H01L21/336 , H01L21/467 , H01L21/84 , H01L29/66 , H01L29/78
CPC分类号： H01L29/785 , H01L29/66818 , H01L29/7853 , Y10S438/947
摘要： A process may include forming a mask directly on and above a region selected as an initial semiconductor fin on a substrate and reducing the initial semiconductor fin forming a semiconductor fin that is laterally thinned from the initial semiconductor fin. The process may be carried out causing the mask to recede to a greater degree in the lateral direction than the vertical direction. In various embodiments, the process may include removing material from the fin semiconductor to achieve a thinned semiconductor fin, which has receded beneath the shadow of the laterally receded mask. Electronic devices may include the thinned semiconductor fin as part of a semiconductor device.
摘要翻译：工艺可以包括在衬底上直接在选择为初始半导体鳍片的区域之上和之上形成掩模，并且减少形成从初始半导体鳍片横向变薄的半导体鳍片的初始半导体鳍片。可以进行该处理，使得掩模在横向上比垂直方向更大程度地退回。在各种实施例中，该方法可以包括从散热片半导体去除材料以实现已经在横向退绕的掩模的阴影之下的减薄的半导体鳍片。电子器件可以包括作为半导体器件的一部分的变薄的半导体鳍片。

7. 发明授权

US08450829B2 Efficient pitch multiplication process 有权
标题翻译：高效的音调乘法过程
公开(公告)号：US08450829B2
公开(公告)日：2013-05-28
申请号：US13198581
申请日：2011-08-04
申请人： Mark Fischer , Stephen Russell , H. Montgomery Manning
发明人： Mark Fischer , Stephen Russell , H. Montgomery Manning
IPC分类号： H01L21/70
CPC分类号： H01L29/06 , H01L21/0338 , H01L21/3088
摘要： Pitch multiplied and non-pitch multiplied features of an integrated circuit, e.g., features in the array, interface and periphery areas of the integrated circuit, are formed by processing a substrate through a mask. The mask is formed by patterning a photoresist layer which simultaneously defines mask elements corresponding to features in the array, interface and periphery areas of the integrated circuit. The pattern is transferred to an amorphous carbon layer. Sidewall spacers are formed on the sidewalls of the patterned amorphous carbon layer. A layer of protective material is deposited and then patterned to expose mask elements in the array region and in selected parts of the interface or periphery areas. Amorphous carbon in the array region or other exposed parts is removed, thereby leaving a pattern including free-standing, pitch multiplied spacers in the array region. The protective material is removed, leaving a pattern of pitch multiplied spacers in the array region and non-pitch multiplied mask elements in the interface and periphery areas. The pattern is transferred to a hard mask layer, through which an underlying substrate is etched.
摘要翻译：通过通过掩模处理衬底来形成集成电路的间距倍增和非间距倍数特征，例如集成电路的阵列，接口和外围区域中的特征。通过图案化光刻胶层来形成掩模，该光致抗蚀剂层同时限定对应于集成电路的阵列，界面和外围区域中的特征的掩模元件。将图案转移到无定形碳层。侧壁间隔物形成在图案化无定形碳层的侧壁上。沉积一层保护材料，然后将其图案化以暴露阵列区域中的掩模元件和界面或外围区域的选定部分。除去阵列区域或其它暴露部分中的无定形碳，从而在阵列区域中留下包括独立的，间距倍增的间隔物的图案。去除保护材料，在阵列区域中留下间距倍数间隔物的图案，并在界面和外围区域留下非间距倍增的掩模元件。将图案转移到硬掩模层，通过该硬掩模层蚀刻下面的基底。

8. 发明申请

US20120241832A1 DRAM Arrays 有权
标题翻译： DRAM阵列
公开(公告)号：US20120241832A1
公开(公告)日：2012-09-27
申请号：US13490369
申请日：2012-06-06
申请人： Mark Fischer
发明人： Mark Fischer
IPC分类号： H01L27/108
CPC分类号： H01L27/108 , H01L27/0207 , H01L27/10873
摘要： The invention includes methods for utilizing partial silicon-on-insulator (SOI) technology in combination with fin field effect transistor (finFET) technology to form transistors particularly suitable for utilization in dynamic random access memory (DRAM) arrays. The invention also includes DRAM arrays having low rates of refresh. Additionally, the invention includes semiconductor constructions containing transistors with horizontally-opposing source/drain regions and channel regions between the source/drain regions. The transistors can include gates that encircle at least three-fourths of at least portions of the channel regions, and in some aspects can include gates that encircle substantially an entirety of at least portions of the channel regions.
摘要翻译：本发明包括与鳍式场效应晶体管（finFET）技术结合使用部分绝缘体上硅（SOI）技术的方法，以形成特别适用于动态随机存取存储器（DRAM）阵列的晶体管。本发明还包括具有低刷新率的DRAM阵列。另外，本发明包括含有水平相对的源极/漏极区域和在源极/漏极区域之间的沟道区域的晶体管的半导体构造。晶体管可以包括围绕通道区域的至少部分的至少四分之三的栅极，并且在一些方面可包括围绕通道区域的至少部分的整体的栅极。

9. 发明授权

US08131580B2 Method and system for load balancing a sales forecast system by selecting a synchronous or asynchronous process based on a type of an event affecting the sales forecast 有权
标题翻译：通过基于影响销售预测的事件的类型选择同步或异步过程来负载平衡销售预测系统的方法和系统
公开(公告)号：US08131580B2
公开(公告)日：2012-03-06
申请号：US11832526
申请日：2007-08-01
申请人： Kedar Doshi , Mark Fischer , Evan Chou
发明人： Kedar Doshi , Mark Fischer , Evan Chou
IPC分类号： G06Q10/00
CPC分类号： G06Q10/04 , G06Q10/0639 , G06Q30/0202
摘要： In accordance with embodiments, there are provided mechanisms and methods for selecting a synchronous or asynchronous process to determine a forecast. These mechanisms and methods for such synchronous/asynchronous process selection can enable embodiments to determine forecasts for multiple users (e.g. with hierarchical relationships, etc.) over an arbitrary time interval. The ability of embodiments to provide forecasts that involve such a large amount of data in an effective way can enable forecasting that was otherwise infeasible due to resource limitations.
摘要翻译：根据实施例，提供了用于选择同步或异步过程以确定预测的机制和方法。用于这种同步/异步过程选择的这些机制和方法可使得实施例能够在任意时间间隔上确定多个用户的预测（例如，具有层次关系等）。实施例以有效的方式提供涉及这样大量数据的预测的能力可以使由于资源限制而导致的预测是不可行的。

10. 发明申请

US20110291224A1 EFFICIENT PITCH MULTIPLICATION PROCESS 有权
标题翻译：有效的PITCH MULTIPLICATION PROCESS
公开(公告)号：US20110291224A1
公开(公告)日：2011-12-01
申请号：US13198581
申请日：2011-08-04
申请人： Mark Fischer , Stephen Russell , H.Montgomery Manning
发明人： Mark Fischer , Stephen Russell , H.Montgomery Manning
IPC分类号： H01L29/02
CPC分类号： H01L29/06 , H01L21/0338 , H01L21/3088
摘要： Pitch multiplied and non-pitch multiplied features of an integrated circuit, e.g., features in the array, interface and periphery areas of the integrated circuit, are formed by processing a substrate through a mask. The mask is formed by patterning a photoresist layer which simultaneously defines mask elements corresponding to features in the array, interface and periphery areas of the integrated circuit. The pattern is transferred to an amorphous carbon layer. Sidewall spacers are formed on the sidewalls of the patterned amorphous carbon layer. A layer of protective material is deposited and then patterned to expose mask elements in the array region and in selected parts of the interface or periphery areas. Amorphous carbon in the array region or other exposed parts is removed, thereby leaving a pattern including free-standing, pitch multiplied spacers in the array region. The protective material is removed, leaving a pattern of pitch multiplied spacers in the array region and non-pitch multiplied mask elements in the interface and periphery areas. The pattern is transferred to a hard mask layer, through which an underlying substrate is etched.
摘要翻译：通过通过掩模处理衬底来形成集成电路的间距倍增和非间距倍数特征，例如集成电路的阵列，接口和外围区域中的特征。通过图案化光刻胶层来形成掩模，该光致抗蚀剂层同时限定对应于集成电路的阵列，界面和外围区域中的特征的掩模元件。将图案转移到无定形碳层。侧壁间隔物形成在图案化无定形碳层的侧壁上。沉积一层保护材料，然后将其图案化以暴露阵列区域中的掩模元件和界面或外围区域的选定部分。除去阵列区域或其它暴露部分中的无定形碳，从而在阵列区域中留下包括独立的，间距倍增的间隔物的图案。去除保护材料，在阵列区域中留下间距倍数间隔物的图案，并在界面和外围区域留下非间距倍增的掩模元件。将图案转移到硬掩模层，通过该硬掩模层蚀刻下面的基底。

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