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1. 发明授权

US5510281A Method of fabricating a self-aligned DMOS transistor device using SiC and spacers 失效
标题翻译：使用SiC和间隔物制造自对准DMOS晶体管器件的方法
公开(公告)号：US5510281A
公开(公告)日：1996-04-23
申请号：US406440
申请日：1995-03-20
申请人： Mario Ghezzo , Tat-Sing P. Chow , James W. Kretchmer , Richard J. Saia , William A. Hennessy
发明人： Mario Ghezzo , Tat-Sing P. Chow , James W. Kretchmer , Richard J. Saia , William A. Hennessy
IPC分类号： H01L21/04 , H01L29/24 , H01L29/423 , H01L29/45 , H01L29/78 , H01L21/265
CPC分类号： H01L29/1608 , H01L29/42376 , H01L29/4238 , H01L29/45 , H01L29/66068 , H01L29/7802
摘要： A method for fabricating a semiconductor device includes patterning a refractory dielectric layer over a semiconductor layer of a first conductivity type; conformally depositing a first spacer layer over the patterned refractory dielectric layer and the semiconductor layer; patterning the first spacer layer to leave a first spacer adjacent to an edge of the patterned refractory dielectric layer; implanting ions of a second conductivity type to form a base region in the semiconductor layer; conformally depositing a second spacer layer over the patterned refractory dielectric layer and the semiconductor layer; patterning the second spacer layer to leave a second spacer adjacent to an edge of the first spacer; implanting ions of the first conductivity type to form a source region in the base region; removing the first and second spacers; applying a gate insulator layer over at least a portion of the semiconductor layer; conformally depositing a gate electrode layer over the gate insulator layer and the semiconductor layer; and patterning the gate electrode layer to form a gate electrode portion adjacent to an edge of the patterned refractory dielectric layer. Preferably the step of conformally depositing the gate electrode layer includes depositing an electrically conductive layer having the same thickness as a combined width of the first and second spacers. In one embodiment the semiconductor layer includes silicon carbide, the patterned refractory dielectric layer includes silicon dioxide, the spacers include silicon nitride, and the gate electrode layer includes polysilicon.
摘要翻译：一种用于制造半导体器件的方法包括在第一导电类型的半导体层上图形化难熔电介质层; 在图案化的难熔电介质层和半导体层上共形沉积第一间隔层; 图案化第一间隔层以留下邻近图案化耐火介电层的边缘的第一间隔物; 注入第二导电类型的离子以在半导体层中形成基极区; 在图案化的耐火介电层和半导体层上共形沉积第二间隔层; 图案化第二间隔层以留下与第一间隔物的边缘相邻的第二间隔物; 注入第一导电类型的离子以在基区中形成源区; 去除所述第一和第二间隔件; 在所述半导体层的至少一部分上施加栅极绝缘体层; 在所述栅极绝缘体层和所述半导体层上共形沉积栅电极层; 以及图案化栅极电极层以形成邻近图案化耐火介电层的边缘的栅电极部分。优选地，共形沉积栅极电极层的步骤包括沉积具有与第一和第二间隔物的组合宽度相同的厚度的导电层。在一个实施例中，半导体层包括碳化硅，图案化的难熔电介质层包括二氧化硅，间隔物包括氮化硅，并且栅电极层包括多晶硅。

2. 发明授权

US5475353A Micromachined electromagnetic switch with fixed on and off positions using three magnets 失效
标题翻译：使用三个磁体的具有固定开和关位置的微加工电磁开关
公开(公告)号：US5475353A
公开(公告)日：1995-12-12
申请号：US315520
申请日：1994-09-30
申请人： Waseem A. Roshen , Mario Ghezzo , Richard J. Saia , William A. Hennessy , Bharat S. Bagepalli
发明人： Waseem A. Roshen , Mario Ghezzo , Richard J. Saia , William A. Hennessy , Bharat S. Bagepalli
IPC分类号： H01H50/00 , H01H51/22
CPC分类号： H01H50/005 , H01H2001/0084 , H01H2050/007
摘要： A micromachined electromagnetic switch, including two soft magnets situated in fixed positions above and below a permanent magnet, toggles between two fixed positions by the application of current in an actuator coil for a brief period. The permanent magnet is attached to a micromachined hinge or spring which moves under the action of a net force, thereby opening or closing the switch. Current in the actuator coil changes the relative strength of the magnetic forces due to the soft magnets. In the absence of current in the actuator coil, the switch is kept in the open or closed position by the attractive magnetic force between the permanent magnet and either the upper or lower soft magnet, whereby the stronger force is exercised between the permanent magnet and the nearest soft magnet.
摘要翻译：位于永磁体上下固定位置的两个软磁体的微加工电磁开关通过在致动器线圈中施加电流短暂地切换在两个固定位置之间。永久磁铁连接在微机械加工的铰链或弹簧上，该铰链或弹簧在净力的作用下移动，从而打开或关闭开关。致动器线圈中的电流改变了由于软磁体引起的磁力的相对强度。在致动器线圈中没有电流的情况下，通过永磁体和上软磁体之间的吸引磁力将开关保持在打开或关闭位置，从而在永磁体和最近的软磁铁。

3. 发明授权

US5454904A Micromachining methods for making micromechanical moving structures including multiple contact switching system 失效
标题翻译：微机械移动结构的微加工方法，包括多接触切换系统
公开(公告)号：US5454904A
公开(公告)日：1995-10-03
申请号：US286722
申请日：1994-08-05
申请人： Mario Ghezzo , Richard J. Saia , Bharat S. Bagepalli , Imdad Imam , Dennis L. Polla
发明人： Mario Ghezzo , Richard J. Saia , Bharat S. Bagepalli , Imdad Imam , Dennis L. Polla
IPC分类号： B29C35/08 , B29C59/16 , H01H1/06 , H01H9/40 , H01H50/00 , B44C1/22 , B29C37/00 , C23F1/00
CPC分类号： H01H50/005 , B29C59/16 , B29C2035/0838 , H01H1/06 , H01H2001/0057 , H01H9/40 , Y10S438/94 , Y10T307/74
摘要： Micromachining methods for fabricating micromechanical structures which include plunger elements free to reciprocate within cavities are fabricated using processing steps in common with those employed in high density interconnect (HDI) technology for multi-chip module packaging. A polymer, such as a polyimide, is utilized as a micromachinable material. In one embodiment, cavities are formed in the polymer material by laser ablation, employing a sacrificial layer as a mask. Electroplated copper may be employed as a sacrificial release layer. One particular structure is a micromechanical electric switch including an array of individual switch contacts actuatable in common.
摘要翻译：用于制造微机械结构的微加工方法，其包括在空腔内自由往复运动的柱塞元件的微机械结构使用与用于多芯片模块封装的高密度互连（HDI）技术中采用的步骤相同的处理步骤来制造。聚合物如聚酰亚胺被用作可微加工材料。在一个实施例中，通过激光烧蚀在聚合物材料中形成空腔，采用牺牲层作为掩模。电镀铜可以用作牺牲剥离层。一个特定结构是微机电式电开关，其包括可共同致动的单独开关触点的阵列。

4. 发明授权

US5472539A Methods for forming and positioning moldable permanent magnets on electromagnetically actuated microfabricated components 失效
标题翻译：在电磁致动的微制造部件上形成和定位成型永久磁铁的方法
公开(公告)号：US5472539A
公开(公告)日：1995-12-05
申请号：US254725
申请日：1994-06-06
申请人： Richard J. Saia , Kevin M. Durocher , Thomas B. Gorczyca , Mario Ghezzo
发明人： Richard J. Saia , Kevin M. Durocher , Thomas B. Gorczyca , Mario Ghezzo
IPC分类号： H01H50/00 , B32B31/28
CPC分类号： H01H50/005 , H02K99/00 , H01H2050/007
摘要： A low temperature batch method for forming and positioning permanent magnets on electromagnetically actuated micro-fabricated components, such as electrical switches employs a first adhesive, such as a Siltem/epoxy blend of an epoxy resin and a siloxane polyimide polymer, to releasably attach a mold layer of Kapton polyimide to a substrate, which may be the movable portion of a micromechanical structure, or a precursor to such movable portion. A well-shape cavity is formed in the mold layer, and filled with a slurry of rare earth NdFeB magnetic particles suspended in a second adhesive, which is cured to form the body of a magnet. The second adhesive is an SPI/epoxy blend, also of an epoxy resin and a siloxane polyimide polymer, but with a greater adhesion strength and a higher temperature softening point compared to the Siltem/epoxy blend. The entire structure is heated, and the mold layer is pulled off the substrate, while the body of magnetic material remains firmly attached. Selective etchants may be subsequently employed to remove metal sacrificial layers, while the NdFeB magnetic particles are protected from attack by the etchant by being effectively encased in plastic.
摘要翻译：用于在诸如电气开关的电磁致动微制造部件上形成和定位永磁体的低温分批方法采用第一粘合剂，例如环氧树脂的Siltem /环氧共混物和硅氧烷聚酰亚胺聚合物，以可释放地附接模具 Kapton聚酰亚胺层可以是基底，其可以是微机械结构的可移动部分，或者是可移动部分的前体。在模具层中形成良好的形状的空腔，并填充悬浮在第二粘合剂中的稀土NdFeB磁性颗粒的浆料，其被固化以形成磁体的主体。第二种粘合剂是SPI /环氧共混物，也是环氧树脂和硅氧烷聚酰亚胺聚合物，但是与Siltem /环氧树脂共混物相比具有更大的粘合强度和更高的温度软化点。整个结构被加热，并且模具层被拉离基板，而磁性材料的主体保持牢固地附着。随后可以选择性蚀刻剂去除金属牺牲层，同时通过被有效地包裹在塑料中来保护NdFeB磁性颗粒免受蚀刻剂的侵蚀。

5. 发明授权

US5430597A Current interrupting device using micromechanical components 失效
标题翻译：电流中断装置采用微机械元件
公开(公告)号：US5430597A
公开(公告)日：1995-07-04
申请号：US313
申请日：1993-01-04
申请人： Bharat S. Bagepalli , Mario Ghezzo , Richard J. Saia , Imdad Imam
发明人： Bharat S. Bagepalli , Mario Ghezzo , Richard J. Saia , Imdad Imam
IPC分类号： H01H9/40 , H01H59/00 , H01H71/12 , H01H73/00
CPC分类号： H01H59/0009 , H01H2071/008 , H01H71/123 , H01H9/40
摘要： A circuit interruption device having a plurality of micromechanical switches mounted on a substrate in a parallel-series array. The array includes a plurality of line branches connected in parallel in a circuit line. Each of the line branches has at least two of the switches serially connected therein. The micromechanical switches each has a pair of contacts formed on the substrate, a bridging contact movably formed on the substrate, and an actuator for causing the bridging contact to move in and out of contact with the contacts. The bridging contact can be either a member slidably disposed in a channel formed on the substrate or member attached to an end of a cantilever having its other end attached to the substrate. The actuator is controlled by a trip device which is also mounted on the substrate. The trip device senses the current in the circuit line and causes the switches to open when a predetermined level of current in the line is exceeded.
摘要翻译：一种电路中断装置，具有以平行阵列阵列安装在基板上的多个微机械开关。阵列包括在电路线中并联连接的多个线分支。每个线路分支具有串联连接在其中的至少两个开关。微机械开关各自具有形成在基板上的一对触点，可移动地形成在基板上的桥接触头和用于使桥接触点移动进入和断开与触点接触的致动器。桥接接触可以是可滑动地设置在形成在基底上的通道中的构件或附接到其另一端附接到基底的悬臂的端部的构件。致动器由也安装在基板上的跳闸装置控制。跳闸装置感测电路线路中的电流，并且当超过线路中的预定电流电流时使开关断开。

6. 发明授权

US5374792A Micromechanical moving structures including multiple contact switching system 失效
标题翻译：微机械移动结构包括多接点切换系统
公开(公告)号：US5374792A
公开(公告)日：1994-12-20
申请号：US172
申请日：1993-01-04
申请人： Mario Ghezzo , Richard J. Saia , Bharat S. Bagepalli , Imdad Imam , Dennis L. Polla
发明人： Mario Ghezzo , Richard J. Saia , Bharat S. Bagepalli , Imdad Imam , Dennis L. Polla
IPC分类号： B29C35/08 , B29C59/16 , H01H1/06 , H01H9/40 , H01H50/00 , H01H15/00 , B29C37/00 , B44C1/22
CPC分类号： H01H50/005 , B29C59/16 , B29C2035/0838 , H01H1/06 , H01H2001/0057 , H01H9/40 , Y10S438/94 , Y10T307/74
摘要： Micromachining methods for fabricating micromechanical structures which include plunger elements free to reciprocate within cavities are fabricated using processing steps in common with those employed in high density interconnect (HDI) technology for multi-chip module packaging. A polymer, such as a polyimide, is utilized as a micromachinable material. In one embodiment, cavities are formed in the polymer material by laser ablation, employing a sacrificial layer as a mask. Electroplated copper may be employed as a sacrificial release layer. One particular structure is a micromechanical electric switch including an array of individual switch contacts actuatable in common.
摘要翻译：用于制造微机械结构的微加工方法，其包括在空腔内自由往复运动的柱塞元件的微机械结构使用与用于多芯片模块封装的高密度互连（HDI）技术中采用的步骤相同的处理步骤来制造。聚合物如聚酰亚胺被用作可微加工材料。在一个实施例中，通过激光烧蚀在聚合物材料中形成空腔，采用牺牲层作为掩模。电镀铜可以用作牺牲剥离层。一个特定结构是微机电式电开关，其包括可共同致动的单独开关触点的阵列。

7. 发明授权

US5531018A Method of micromachining electromagnetically actuated current switches with polyimide reinforcement seals, and switches produced thereby 失效
标题翻译：具有聚酰亚胺加强密封的微电机驱动电流开关的微加工方法以及由此产生的开关
公开(公告)号：US5531018A
公开(公告)日：1996-07-02
申请号：US169272
申请日：1993-12-20
申请人： Richard J. Saia , Mario Ghezzo , Bharat S. K. Bagepalli , Kevin M. Durocher
发明人： Richard J. Saia , Mario Ghezzo , Bharat S. K. Bagepalli , Kevin M. Durocher
IPC分类号： B81B3/00 , H01H50/00 , H01H11/00
CPC分类号： B81B7/0012 , H01H50/005 , B81B2201/018 , Y10T29/49105
摘要： An insulating layer with at least one via is provided over a metal plate. A sacrificial layer is applied over a portion of the insulating layer so that the sacrificial layer extends into the via. A metal bridge having at least one opening is provided over a portion of the sacrificial layer and a portion of the insulating layer so that the metal bridge extends over the via and the opening is situated adjacent a portion of the sacrificial layer. A reinforcing seal layer with a well is provided over the metal bridge so that the well is situated adjacent to at least a portion of the opening. The sacrificial layer is then removed.
摘要翻译：具有至少一个通孔的绝缘层设置在金属板上。牺牲层施加在绝缘层的一部分上，使得牺牲层延伸到通孔中。在牺牲层的一部分和绝缘层的一部分上设置具有至少一个开口的金属桥，使得金属桥在通孔上方延伸，并且开口位于牺牲层的一部分附近。在金属桥上提供了具有井的增强密封层，使得井位于与开口的至少一部分相邻的位置。然后去除牺牲层。

8. 发明授权

US5367585A Integrated microelectromechanical polymeric photonic switch 失效
标题翻译：集成微机电聚合光子开关
公开(公告)号：US5367585A
公开(公告)日：1994-11-22
申请号：US144165
申请日：1993-10-27
申请人： Mario Ghezzo , Christopher P. Yakymyshyn , Richard J. Saia , Dennis L. Polla
发明人： Mario Ghezzo , Christopher P. Yakymyshyn , Richard J. Saia , Dennis L. Polla
IPC分类号： G02B6/35 , G02B27/56 , G02B6/10
CPC分类号： G02B6/3502 , G02B27/56 , G02B6/3536 , G02B6/3546 , G02B6/357 , G02B6/3584
摘要： A microelectromechanical photonic switch includes first and second waveguides. Insulative cladding containing a gap and having a lower refractive index than the refractive indices of the first and second waveguides is situated between the first and second waveguides. One electrode comprising an at least partially transparent material is situated on the same side of the gap as the second waveguide. An additional electrode is provided either on the same side of the gap as the first waveguide or over a piezoelectric strip above a cladding layer on the second waveguide. At least one of the electrodes is capable of being advanced towards the other of the electrodes so as to cause one of the first and second waveguides to advance towards the other of the first and second waveguides.
摘要翻译：微机电光子开关包括第一和第二波导。包含间隙并具有比第一和第二波导的折射率低的折射率的绝缘包层位于第一和第二波导之间。包括至少部分透明材料的一个电极位于与第二波导的间隙的同一侧。在与第一波导的间隙的相同侧上或在第二波导上的包层上方的压电条上设置附加电极。电极中的至少一个能够朝着另一个电极前进，以使得第一和第二波导中的一个朝向第一和第二波导中的另一个前进。

9. 发明授权

US07011983B2 Large organic devices and methods of fabricating large organic devices 有权
标题翻译：大型有机器件和制造大型有机器件的方法
公开(公告)号：US07011983B2
公开(公告)日：2006-03-14
申请号：US10324417
申请日：2002-12-20
申请人： Donald F. Foust , Anil R. Duggal , Richard J. Saia , Herbert S. Cole
发明人： Donald F. Foust , Anil R. Duggal , Richard J. Saia , Herbert S. Cole
IPC分类号： H01L51/40
CPC分类号： H01L51/0097 , H01L51/5036 , H01L51/52 , H01L51/5203 , H01L51/5212 , H01L51/524 , H01L51/5256 , H01L2251/5338 , H01L2251/5361 , Y02E10/549 , Y02P70/521
摘要： Large, light-weight organic devices and methods of preparing large, light-weight organic devices. Specifically, flexible and rigid light-weight plastics are implemented. The flexible plastic may be disposed from a reel. A metal grid is fabricated on the flexible plastic to provide current conduction over the large area. A transparent oxide layer is provided over the metal grid to form the bottom electrode of the organic device. A light emitting or light gathering organic layer is disposed on the transparent oxide layer. A second electrode is disposed over the organic layer. Electrodes are coupled to the metal grid and the second electrode to provide electrical current to or from the organic layer. Depending on the type of materials used for the organic layer, the organic device may comprise an area light device or a photovoltaic device.
摘要翻译：大型，重量轻的有机器件和制备大型轻质有机器件的方法。具体来说，实现了柔性和刚性轻质塑料。柔性塑料可以从卷轴设置。在柔性塑料上制造金属网格以在大面积上提供电流传导。在金属网格上设置透明氧化物层以形成有机器件的底部电极。发光或聚光有机层设置在透明氧化物层上。第二电极设置在有机层上。电极耦合到金属网格和第二电极以向有机层提供电流或从有机层提供电流。根据用于有机层的材料的类型，有机器件可以包括区域光器件或光伏器件。

10. 发明授权

US5362660A Method of making a thin film transistor structure with improved source/drain contacts 失效
标题翻译：制造具有改善的源极/漏极触点的薄膜晶体管结构的方法
公开(公告)号：US5362660A
公开(公告)日：1994-11-08
申请号：US977967
申请日：1992-11-18
申请人： Robert F. Kwasnick , George E. Possin , David E. Holden , Richard J. Saia
发明人： Robert F. Kwasnick , George E. Possin , David E. Holden , Richard J. Saia
IPC分类号： H01L21/3213 , H01L21/336 , H01L29/45 , H01L21/265
CPC分类号： H01L29/66765 , H01L21/32139 , H01L29/458 , Y10S438/97
摘要： Minimum line spacing is reduced and line spacing uniformity is increased in thin film transistors by employing source/drain metallization having a first relatively thin layer of a first conductor and a second relatively thick layer of a second conductor. The second conductor is selected to be one which may be preferentially etched in the presence of the first conductor whereby the first conductor acts as an etch stop for the etchant used to pattern the second conductor portion of the source/drain metallization. This etching is preferably done using dry etching. Dry etching typically provides substantially better control of line width than wet etching. The etching of the second conductor can be done with a dry etch process which etches the photoresist at substantially the same rate as the second conductor whereby the second conductor is provided with a sidewall slope of substantially 45.degree. which improves the quality of passivation provided by subsequent deposition of a conformal passivating layer.
摘要翻译：通过采用具有第一相对薄的第一导体层和第二相对较厚的第二导体层的源极/漏极金属化，薄膜晶体管中的最小线间距减小，并且线间隔均匀性增加。第二导体被选择为可以在第一导体存在的情况下优先蚀刻的导体，由此第一导体充当用于图案化源极/漏极金属化的第二导体部分的蚀刻剂的蚀刻停止。该蚀刻优选使用干蚀刻进行。干蚀刻通常比湿式蚀刻提供对线宽度的更好的控制。第二导体的蚀刻可以通过干法蚀刻工艺进行，该蚀刻工艺以基本上与第二导体相同的速率蚀刻光致抗蚀剂，由此第二导体设置有大致为45°的侧壁斜率，这提高了后续提供的钝化质量共形钝化层的沉积。

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