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1. 发明授权

US10079206B2 Fabricating unique chips using a charged particle multi-beamlet lithography system 有权
公开(公告)号：US10079206B2
公开(公告)日：2018-09-18
申请号：US15389581
申请日：2016-12-23
申请人： MAPPER Lithography IP B.V.
发明人： Marcel Nicolaas Jacobus van Kervinck , Vincent Sylvester Kuiper , Marco Jan-Jaco Wieland
IPC分类号： H01L21/44 , H01L23/528 , G06F17/50 , G03F7/20
CPC分类号： H01L23/528 , G03F7/2059 , G03F7/2061 , G06F17/5068 , G06F17/5077 , H01L21/263 , H01L21/76816 , H01L25/0655 , H01L27/0207 , H01L27/0617 , H01L29/0684 , H01L29/0692
摘要： Method of manufacturing electronic devices using a maskless lithographic exposure system using a maskless pattern writer, wherein beamlet control data is generated for controlling the maskless pattern writer to expose a wafer for creation of the electronic devices. The beamlet control data is generated based on design layout data defining a plurality of structures, such as vias, for the electronic devices to be manufactured from the wafer, and selection data defining which of the structures of the design layout data are applicable for each electronic device to be manufactured from the wafer, the selection data defining a different set of the structures for different subsets of the electronic devices. Exposure of the wafer according to the beamlet control data results in exposing a pattern having a different set of the structures for different subsets of the electronic devices.

2. 发明授权

US09905322B2 Multi-electrode electron optics 有权
公开(公告)号：US09905322B2
公开(公告)日：2018-02-27
申请号：US14541233
申请日：2014-11-14
申请人： MAPPER LITHOGRAPHY IP B.V.
发明人： Marco Jan-Jaco Wieland , Willem Henk Urbanus
IPC分类号： G21K1/02 , G21K5/04 , H01J37/30 , H01J37/24 , H01J37/317 , H01J37/02 , H01J37/16 , H01J37/065 , H01J37/12
CPC分类号： G21K1/02 , G21K5/04 , H01J37/026 , H01J37/065 , H01J37/12 , H01J37/16 , H01J37/24 , H01J37/3002 , H01J37/3007 , H01J37/3174 , H01J37/3175 , H01J37/3177 , H01J2237/002 , H01J2237/0216 , H01J2237/024 , H01J2237/032 , H01J2237/04 , H01J2237/1215 , H01J2237/16 , H01J2237/1825 , H01J2237/303 , H01J2237/30472
摘要： The invention relates to a collimator electrode stack (70), comprising: —at least three collimator electrodes (71-80) for collimating a charged particle beam along an optical axis (A), wherein each collimator electrode comprises an electrode body with an electrode aperture for allowing passage to the charged particle beam, wherein the electrode bodies are spaced along an axial direction (Z) which is substantially parallel with the optical axis, and wherein the electrode apertures are coaxially aligned along the optical axis; and —a plurality of spacing structures (89) provided between each pair of adjacent collimator electrodes and made of an electrically insulating material, for positioning the collimator electrodes at predetermined distances along the axial direction. Each of the collimator electrodes (71-80) is electrically connected to a separate voltage output (151-160).The invention further relates to a method of operating a charged particle beam generator.

3. 发明申请

US20180122737A1 FABRICATING UNIQUE CHIPS USING A CHARGED PARTICLE MULTI-BEAMLET LITHOGRAPHY SYSTEM 审中-公开
公开(公告)号：US20180122737A1
公开(公告)日：2018-05-03
申请号：US15389581
申请日：2016-12-23
申请人： MAPPER Lithography IP B.V.
发明人： Marcel Nicolaas Jacobus van Kervinck , Vincent Sylvester Kuiper , Marco Jan-Jaco Wieland
IPC分类号： H01L23/528 , G06F17/50 , G03F7/20
CPC分类号： H01L23/528 , G03F7/2059 , G06F17/5068 , G06F17/5077 , H01L21/263 , H01L21/768 , H01L25/0655 , H01L27/0207 , H01L27/0617 , H01L29/0684 , H01L29/0692
摘要： Method of manufacturing electronic devices using a maskless lithographic exposure system using a maskless pattern writer, wherein beamlet control data is generated for controlling the maskless pattern writer to expose a wafer for creation of the electronic devices. The beamlet control data is generated based on design layout data defining a plurality of structures, such as vias, for the electronic devices to be manufactured from the wafer, and selection data defining which of the structures of the design layout data are applicable for each electronic device to be manufactured from the wafer, the selection data defining a different set of the structures for different subsets of the electronic devices. Exposure of the wafer according to the beamlet control data results in exposing a pattern having a different set of the structures for different subsets of the electronic devices.

4. 发明授权

US09184026B2 Proximity effect correction in a charged particle lithography system 有权
标题翻译：带电粒子光刻系统中的接近效应校正
公开(公告)号：US09184026B2
公开(公告)日：2015-11-10
申请号：US14626891
申请日：2015-02-19
申请人： Mapper Lithography IP B.V.
发明人： Marco Jan-Jaco Wieland
IPC分类号： H01J37/30 , H01J37/302 , G21K5/04 , H01J37/317 , H01J37/04
CPC分类号： H01J37/3174 , H01J37/045 , H01J37/3007 , H01J37/3026 , H01J37/3177 , H01J2237/043 , H01J2237/0435 , H01J2237/31769
摘要： The invention relates to a method for performing charged particle beam proximity effect correction, comprising the steps of: receiving a digital layout pattern to be patterned onto a target using one or more charged particle beams; selecting a base proximity function comprising a sum of an alpha and a beta proximity function, wherein said alpha proximity function models a short range proximity effect and said beta proximity function models a long range proximity effect, wherein a constant η is defined as a ratio between the beta proximity function and the alpha proximity function in said sum, with 0
摘要翻译：本发明涉及一种用于执行带电粒子束邻近效应校正的方法，包括以下步骤：使用一个或多个带电粒子束将待图案化的数字布局图案接收到目标上; 选择包括α和β接近度函数之和的基本接近函数，其中所述α接近函数模拟短距离邻近效应，并且所述β接近函数模拟远距离邻近效应，其中恒定和近似函数被定义为所述总和中β接近函数和α接近函数之间的比率，其中0 <＆eegr; <1; 确定对应于所述基本邻近效应函数的修改的接近度函数，其中所述α邻近函数已被Dirac delta函数代替，并且使用电子处理器执行所述数字布局图案与所述修改的接近函数的去卷积，以产生经校正的布局模式。

5. 发明授权

US08859983B2 Method of and system for exposing a target 有权
标题翻译：暴露目标的方法和系统
公开(公告)号：US08859983B2
公开(公告)日：2014-10-14
申请号：US13935602
申请日：2013-07-05
申请人： Mapper Lithography IP B.V.
发明人： Marco Jan-Jaco Wieland
IPC分类号： H01J37/317 , B82Y10/00 , B82Y40/00
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00
摘要： The invention relates to a method of exposing a target by means of a plurality of beamlets. First, a plurality of beamlets is provided. The beamlets are arranged in an array. Furthermore, a target to be exposed is provided. Subsequently, relative movement in a first direction between the plurality of beamlets and the target is created. Finally, the plurality of beamlets is moved in a second direction, such that each beamlet exposes a plurality of scan lines on the target. The relative movement in the first direction and the movement of the plurality of beamlets in the second direction are such that the distance between adjacent scan lines exposed by the plurality of beamlets is smaller than a projection pitch Pproj,X in the first direction between beamlets of the plurality of beamlets in the array.
摘要翻译：本发明涉及通过多个子束曝光目标的方法。首先，提供多个子束。子束排列成阵列。此外，提供要暴露的目标。随后，产生在多个子束与目标之间的第一方向的相对运动。最后，多个子束在第二方向上移动，使得每个子束在目标上露出多条扫描线。第一方向上的相对移动和多个子束在第二方向上的移动使得由多个子束暴露的相邻扫描线之间的距离小于第一方向上的投影间距Pproj，X在子束之间的第一方向上阵列中的多个子束。

6. 发明授权

US08759787B2 Charged particle multi-beamlet lithography system with modulation device 有权
标题翻译：带调制装置的带电粒子多光束光刻系统
公开(公告)号：US08759787B2
公开(公告)日：2014-06-24
申请号：US13937321
申请日：2013-07-09
申请人： Mapper Lithography IP B.V.
发明人： Marco Jan-Jaco Wieland , Remco Jager , Alexander Hendrik Vincent Van Veen , Stijn Willem Herman Karel Steenbrink
IPC分类号： G21K5/04
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/045 , H01J37/07 , H01J37/3174 , H01J2237/0262 , H01J2237/0435 , H01J2237/0437 , H01J2237/31774
摘要： The invention relates to a charged particle lithography system for patterning a target. The lithography system has a beam generator for generating a plurality of charged particle beamlets, a beam stop array with a beam-blocking surface provided with an array of apertures; and a modulation device for modulating the beamlets by deflection. The modulation device has a substrate provided with a plurality of modulators arranged in arrays, each modulator being provided with electrodes extending on opposing sides of a corresponding aperture. The modulators are arranged in groups for directing a group of beamlets towards a single aperture in the beam stop array. Individual modulators within each group have an orientation such that a passing beamlet, if blocking is desired, is directed to a blocking position onto the beam stop array. Beamlet blocking positions for different beamlets are substantially homogeneously spread around the corresponding single aperture in the beam stop array.
摘要翻译：本发明涉及一种用于图案化靶的带电粒子光刻系统。光刻系统具有用于产生多个带电粒子束的光束发生器，具有设置有孔阵列的光束阻挡表面的光束停止阵列; 以及用于通过偏转调制子束的调制装置。调制装置具有设置有排列成阵列的多个调制器的基板，每个调制器设置有在对应的孔的相对侧上延伸的电极。调制器被分组地布置成用于将一组子束引向光束停止阵列中的单个孔。每个组内的各个调制器具有这样的取向，使得如果需要阻挡，则通过的子束被引导到光束停止阵列上的阻挡位置。不同子束的光束阻挡位置基本均匀地分布在光束停止阵列中相应的单个孔周围。

7. 发明授权

US10110343B2 Method and encoding device for encoding a sequence of m-bit pattern words and outputting a frame comprising corresponding n-bit symbols 有权
公开(公告)号：US10110343B2
公开(公告)日：2018-10-23
申请号：US15196711
申请日：2016-06-29
申请人： Mapper Lithography IP B.V.
发明人： Marco Jan-Jaco Wieland
IPC分类号： H03M13/00 , H04L1/00 , H04L25/49
摘要： The present invention relates to a method and encoding device for encoding a sequence of m-bit pattern words and outputting as a bit-stream a frame comprising corresponding n-bit symbols as well as a predetermined comma symbol, wherein m

8. 发明授权

US09978562B2 Method for exposing a wafer 有权
公开(公告)号：US09978562B2
公开(公告)日：2018-05-22
申请号：US14287241
申请日：2014-05-27
申请人： MAPPER LITHOGRAPHY IP B.V.
发明人： Teunis Van De Peut , Marco Jan-Jaco Wieland
IPC分类号： H01J37/317 , H01J37/302 , H01J37/30 , G06T1/20 , B82Y10/00 , B82Y40/00 , H01J37/04 , G03F7/20 , G06T1/60 , H04N1/405
CPC分类号： H01J37/3026 , B82Y10/00 , B82Y40/00 , G03F7/70475 , G06T1/20 , G06T1/60 , H01J37/045 , H01J37/3002 , H01J37/3174 , H01J37/3175 , H01J37/3177 , H01J2237/3175 , H01J2237/31761 , H01J2237/31764 , H04N1/405
摘要： A method for exposing a wafer according to pattern data using a charged particle lithography machine generating a plurality of charged particle beamlets for exposing the wafer. The method comprises providing the pattern data in a vector format, rendering the vector pattern data to generate multi-level pattern data, dithering the multi-level pattern data to generate two-level pattern data, supplying the two-level pattern data to the charged particle lithography machine, and switching on and off the beamlets generated by the charged particle lithography machine on the basis of the two-level pattern data, wherein the pattern data is adjusted on the basis of corrective data.

9. 发明授权

US09887707B2 Method and device for generating a decoded and synchronized output 有权
公开(公告)号：US09887707B2
公开(公告)日：2018-02-06
申请号：US15198487
申请日：2016-06-30
申请人： Mapper Lithography IP B.V.
发明人： Marco Jan-Jaco Wieland
IPC分类号： H03M13/29 , H04L1/00 , H04L27/227
CPC分类号： H03M13/2927 , H03M5/00 , H04L1/0041 , H04L1/0045 , H04L27/2278
摘要： The invention relates to a invention relates to a method and decoding device for receiving an input bit-stream comprising a sequence of n-bit pattern symbols as well as a unique n-bit comma symbol for synchronization, and for generating therefrom a synchronized output comprising a sequence of m-bit pattern words, with m

10. 发明授权

US08916837B2 Charged particle lithography system with intermediate chamber 有权
标题翻译：具有中间室的带电粒子光刻系统
公开(公告)号：US08916837B2
公开(公告)日：2014-12-23
申请号：US14061847
申请日：2013-10-24
申请人： Mapper Lithography IP B.V.
发明人： Laura Dinu-Gürtler , Willem Henk Urbanus , Marco Jan-Jaco Wieland , Stijn Willem Herman Karel Steenbrink
IPC分类号： H01J37/147 , H01J37/10 , G03B27/26 , G21K5/04 , H01J37/317 , H01J37/301 , H01J37/16 , B82Y10/00 , H01J37/09 , H01J37/18 , B82Y40/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/16 , H01J37/18 , H01J37/301 , H01J37/3177 , H01J2237/0435 , H01J2237/0453 , H01J2237/188
摘要： A charged particle lithography system for transferring a pattern onto the surface of a target, comprising a source for generating a charged particle beam, a first chamber housing the source, a collimating system for collimating the charged particle beam, a second chamber housing the collimating system, and a first aperture array element for generating a plurality of charged particle subbeams from the collimated charged particle beam.
摘要翻译：一种用于将图案转印到目标表面上的带电粒子光刻系统，包括用于产生带电粒子束的源，容纳源的第一室，用于准直带电粒子束的准直系统;容纳准直系统的第二室以及用于从准直带电粒子束产生多个带电粒子子束的第一孔阵列元件。

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