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1. 发明授权

US09359223B2 Method for producing thin film electrodes 有权
标题翻译：薄膜电极的制造方法
公开(公告)号：US09359223B2
公开(公告)日：2016-06-07
申请号：US13237487
申请日：2011-09-20
申请人： Manoj Narayanan , Beihai Ma , Uthamalingam Balachandran , Stephen Dorris
发明人： Manoj Narayanan , Beihai Ma , Uthamalingam Balachandran , Stephen Dorris
IPC分类号： B05D5/12 , C01G55/00 , H01L49/02
CPC分类号： H05K3/068 , C01G55/00 , C01G55/002 , C01P2004/03 , C01P2006/32 , C01P2006/40 , H01B1/08 , H01L28/65 , H05K1/092 , Y10T428/31678
摘要： The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.
摘要翻译：本发明提供了一种生产纯相锶氧化钌薄膜的方法，该方法包括使含钌和含锶化合物溶解以产生混合物; 使混合物经受高于形成RuO 2所必需的第一温度，同时防止形成RuO 2; 保持第一温度一段时间以从混合物中除去有机化合物，从而形成基本干燥的膜; 并将膜处于第二温度足以使膜结晶的时间。还提供了包含氧化钌的纯相材料，其中该材料不含RuO 2。

2. 发明申请

US20130071670A1 METHOD FOR PRODUCING THIN FILM ELECTRODES 有权
标题翻译：生产薄膜电极的方法
公开(公告)号：US20130071670A1
公开(公告)日：2013-03-21
申请号：US13237487
申请日：2011-09-20
申请人： Manoj Narayanan , Beihai Ma , Uthamalingam Balachandran , Stephen Dorris
发明人： Manoj Narayanan , Beihai Ma , Uthamalingam Balachandran , Stephen Dorris
IPC分类号： B32B9/04 , B05D5/12 , B32B15/04 , C01F11/02
CPC分类号： H05K3/068 , C01G55/00 , C01G55/002 , C01P2004/03 , C01P2006/32 , C01P2006/40 , H01B1/08 , H01L28/65 , H05K1/092 , Y10T428/31678
摘要： The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.
摘要翻译：本发明提供了一种生产纯相锶氧化钌薄膜的方法，该方法包括使含钌和含锶化合物溶解以产生混合物; 使混合物经受高于形成RuO 2所必需的第一温度，同时防止形成RuO 2; 保持第一温度一段时间以从混合物中除去有机化合物，从而形成基本干燥的膜; 并将膜处于第二温度足以使膜结晶的时间。还提供了包含氧化钌的纯相材料，其中该材料不含RuO 2。

3. 发明申请

US20160278215A1 LOW RESISTIVITY MATERIALS FOR USE IN ELECTROIDES 审中-公开
标题翻译：低电阻材料用于电极
公开(公告)号：US20160278215A1
公开(公告)日：2016-09-22
申请号：US15164169
申请日：2016-05-25
申请人： Uthamalingam Balachandran , Manoj Narayanan , Beihai Ma , Stephen Dorris
发明人： Uthamalingam Balachandran , Manoj Narayanan , Beihai Ma , Stephen Dorris
IPC分类号： H05K3/06 , H01B1/08 , H05K1/09 , C01G55/00
CPC分类号： H05K3/068 , C01G55/00 , C01G55/002 , C01P2004/03 , C01P2006/32 , C01P2006/40 , H01B1/08 , H01L28/65 , H05K1/092 , Y10T428/31678
摘要： The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.
摘要翻译：本发明提供了一种生产纯相锶氧化钌薄膜的方法，该方法包括使含钌和含锶化合物溶解以产生混合物; 使混合物经受高于形成RuO 2所必需的第一温度，同时防止形成RuO 2; 保持第一温度一段时间以从混合物中除去有机化合物，从而形成基本干燥的膜; 并将膜处于第二温度足以使膜结晶的时间。还提供了包含氧化钌的纯相材料，其中该材料不含RuO 2。

4. 发明授权

US08647737B2 Method for fabrication of crack-free ceramic dielectric films 有权
标题翻译：无裂纹陶瓷介质膜的制造方法
公开(公告)号：US08647737B2
公开(公告)日：2014-02-11
申请号：US13250926
申请日：2011-09-30
申请人： Beihai Ma , Uthamalingam Balachandran , Sheng Chao , Shanshan Liu , Manoj Narayanan
发明人： Beihai Ma , Uthamalingam Balachandran , Sheng Chao , Shanshan Liu , Manoj Narayanan
IPC分类号： B32B7/02 , B05D5/12 , B05D3/02 , H01G4/06
CPC分类号： C23C18/1254 , C04B35/4682 , C04B35/493 , C04B35/624 , C04B35/634 , C04B2235/3213 , C04B2235/3227 , C04B2235/6562 , C23C18/1216 , C23C18/1225 , C23C18/1241 , C23C18/1283 , C23C18/1295 , C23C18/208 , H01B19/04 , H01L21/02118 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02197 , H01L21/02282 , H01L21/02356 , H01L21/3105 , H01L28/55 , Y10T428/24975
摘要： The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.
摘要翻译：本发明提供了一种在基板上形成无裂纹电介质膜的方法。该方法包括将厚度为约0.3μm至约1.0μm的电介质前体层施加到基底上。沉积之后是每层的低温热预处理，预溶解，热解和结晶步骤。重复沉积，热预处理，预溶解，热解和结晶，直到介电膜形成约1.5μm至约20.0μm的总厚度，并提供最终的结晶处理以形成厚的电介质膜。还提供了在基板上的厚的无裂纹的电介质膜，电介质形成致密的无厚度的无裂纹的电介质，其整体电介质厚度为约1.5μm至约20.0μm。

5. 发明授权

US09834843B2 Method for fabrication of crack-free ceramic dielectric films 有权
公开(公告)号：US09834843B2
公开(公告)日：2017-12-05
申请号：US15165427
申请日：2016-05-26
申请人： Beihai Ma , Manoj Narayanan , Uthamalingam Balachandran , Sheng Chao , Shanshan Liu
发明人： Beihai Ma , Manoj Narayanan , Uthamalingam Balachandran , Sheng Chao , Shanshan Liu
IPC分类号： C23C18/00 , C23C18/12 , H01B19/04 , H01L21/02 , C04B35/468 , C04B35/493 , C04B35/624 , C04B35/634 , C23C18/20 , H01L21/3105 , H01L49/02
CPC分类号： C23C18/1254 , C04B35/4682 , C04B35/493 , C04B35/624 , C04B35/634 , C04B2235/3213 , C04B2235/3227 , C04B2235/6562 , C23C18/1216 , C23C18/1225 , C23C18/1241 , C23C18/1283 , C23C18/1295 , C23C18/208 , H01B19/04 , H01L21/02118 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02197 , H01L21/02282 , H01L21/02356 , H01L21/3105 , H01L28/55 , Y10T428/24975
摘要： The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.

6. 发明授权

US08974856B2 Method for fabrication of ceramic dielectric films on copper foils 有权
标题翻译：铜箔上陶瓷电介质膜的制造方法
公开(公告)号：US08974856B2
公开(公告)日：2015-03-10
申请号：US12786940
申请日：2010-05-25
申请人： Beihai Ma , Manoj Narayanan , Stephen E. Dorris , Uthamalingam Balachandran
发明人： Beihai Ma , Manoj Narayanan , Stephen E. Dorris , Uthamalingam Balachandran
IPC分类号： B05D7/00 , C23C26/00 , C04B35/491 , C04B35/624 , C23C18/12 , H01G4/12
CPC分类号： H01G13/04 , C04B35/491 , C04B35/624 , C04B2235/3227 , C04B2235/3232 , C04B2235/3244 , C04B2235/3296 , C04B2235/441 , C04B2235/443 , C04B2235/449 , C04B2235/6562 , C04B2235/6565 , C04B2235/6584 , C04B2235/768 , C23C18/1204 , C23C18/1208 , C23C18/1225 , C23C18/1241 , C23C18/1254 , C23C18/1283 , C23C18/1295 , C23C26/00 , H01G4/1218 , H01G4/1245 , Y10T428/24355 , Y10T428/266
摘要： The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.
摘要翻译：本发明提供一种在铜箔上制造陶瓷膜的方法。该方法包括将一层溶胶 - 凝胶组合物涂覆在铜箔上。溶胶 - 凝胶组合物包含悬浮在2-甲氧基乙醇中的陶瓷材料的前体。然后将溶胶 - 凝胶层在高达约250℃的温度下干燥。然后将干燥的层在约300至约450℃的温度下热解，以从陶瓷前体形成陶瓷膜。陶瓷膜然后在约600至约750℃的温度下结晶。干燥，热解和结晶在惰性气体流下进行。在一些实施方案中，将另外的溶胶 - 凝胶组合物层施加到陶瓷膜上，并重复干燥，热解和结晶步骤以使附加层在铜箔上形成较厚的陶瓷层。如果需要，该过程可重复一次或多次。

7. 发明申请

US20160376708A1 METHOD FOR FABRICATION OF CRACK-FREE CERAMIC DIELECTRIC FILMS 有权
标题翻译：无孔陶瓷电介质膜的制造方法
公开(公告)号：US20160376708A1
公开(公告)日：2016-12-29
申请号：US15165427
申请日：2016-05-26
申请人： Beihai Ma , Manoj Narayanan , Uthamalingam Balachandran , Sheng Chao , Shanshan Liu
发明人： Beihai Ma , Manoj Narayanan , Uthamalingam Balachandran , Sheng Chao , Shanshan Liu
IPC分类号： C23C18/12 , H01L21/3105 , H01L49/02 , H01L21/02
CPC分类号： C23C18/1254 , C04B35/4682 , C04B35/493 , C04B35/624 , C04B35/634 , C04B2235/3213 , C04B2235/3227 , C04B2235/6562 , C23C18/1216 , C23C18/1225 , C23C18/1241 , C23C18/1283 , C23C18/1295 , C23C18/208 , H01B19/04 , H01L21/02118 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02197 , H01L21/02282 , H01L21/02356 , H01L21/3105 , H01L28/55 , Y10T428/24975
摘要： The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.
摘要翻译：本发明提供了一种在基板上形成无裂纹电介质膜的方法。该方法包括将厚度为约0.3μm至约1.0μm的电介质前体层施加于基底。沉积之后是每层的低温热预处理，预溶解，热解和结晶步骤。重复沉积，热预处理，预溶解，热解和结晶，直到电介质膜形成约1.5μm至约20.0μm的总厚度，并提供最终的结晶处理以形成厚的电介质膜。该方法在基底上提供厚的无裂纹的电介质膜，电介质形成致密的无厚度的无裂纹电介质，其整个电介质厚度为约1.5μm至约20.0μm。

8. 发明申请

US20130084444A1 METHOD FOR FABRICATION OF CRACK-FREE CERAMIC DIELECTRIC FILMS 有权
标题翻译：无孔陶瓷电介质膜的制造方法
公开(公告)号：US20130084444A1
公开(公告)日：2013-04-04
申请号：US13250926
申请日：2011-09-30
申请人： Beihai Ma , Uthamalingam Balachandran , Sheng Chao , Shanshan Liu , Manoj Narayanan
发明人： Beihai Ma , Uthamalingam Balachandran , Sheng Chao , Shanshan Liu , Manoj Narayanan
IPC分类号： B05D5/12 , B32B7/02
CPC分类号： C23C18/1254 , C04B35/4682 , C04B35/493 , C04B35/624 , C04B35/634 , C04B2235/3213 , C04B2235/3227 , C04B2235/6562 , C23C18/1216 , C23C18/1225 , C23C18/1241 , C23C18/1283 , C23C18/1295 , C23C18/208 , H01B19/04 , H01L21/02118 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02197 , H01L21/02282 , H01L21/02356 , H01L21/3105 , H01L28/55 , Y10T428/24975
摘要： The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.
摘要翻译：本发明提供了一种在基板上形成无裂纹电介质膜的方法。该方法包括将厚度为约0.3μm至约1.0μm的电介质前体层施加到基底。沉积之后是每层的低温热预处理，预溶解，热解和结晶步骤。重复沉积，热预处理，预溶解，热解和结晶，直到电介质膜形成约1.5μm至约20.0μm的总厚度，并提供最终的结晶处理以形成厚的电介质膜。还提供了在基板上的厚的无裂纹的电介质膜，该电介质形成了具有约1.5μm至约20.0μm的总电介质厚度的致密厚的无裂纹电介质。

9. 发明授权

US06847155B2 Electroactive apparatus and methods 失效
标题翻译：电动装置和方法
公开(公告)号：US06847155B2
公开(公告)日：2005-01-25
申请号：US10108203
申请日：2002-03-27
申请人： Robert W. Schwartz , Manoj Narayanan
发明人： Robert W. Schwartz , Manoj Narayanan
IPC分类号： H01L41/053 , H01L41/09 , H01L41/08
CPC分类号： H01L41/0926 , H01L41/0536 , Y10S310/80
摘要： High performance electromechanical devices suitable for a wide range of applications are described. The electroactive devices are capable of operating in a manner that offers enhanced mechanical displacement responses and increased load-bearing capabilities. In one embodiment, the device is capable of providing a significantly increased level of free displacement. The electroactive devices include an electroactive composite which includes at least one electroactive material that may comprise an electrostrictive or a piezoelectric material and a tensioning device which is adapted for inducing a mechanical pre-load to the electroactive composite structure. The tensioning device exerts a mechanical pre-load upon the electroactive material which alters stress profile, increases mechanical energy and increases stored elastic energy of the electroactive devices.
摘要翻译：描述适用于广泛应用的高性能机电装置。电动装置能够以提供增强的机械位移响应和增加的承载能力的方式操作。在一个实施例中，该装置能够提供显着增加的自由位移水平。电活性器件包括电活性复合材料，其包括至少一种电活性材料，其可以包括电致伸缩或压电材料，以及张紧装置，其适于诱导电活性复合结构的机械预载。张紧装置对电活性材料施加机械预载，其改变应力分布，增加机械能并增加电活性装置的储存的弹性能。

10. 发明申请

US20090303839A1 STRESS-BIASED CYMBALS INCORPORATING A SHAPE MEMORY ALLOY 审中-公开
标题翻译：包含形状记忆合金的应力偏心圆柱体
公开(公告)号：US20090303839A1
公开(公告)日：2009-12-10
申请号：US12184195
申请日：2008-07-31
申请人： Manoj Narayanan , Robert W. Schwartz
发明人： Manoj Narayanan , Robert W. Schwartz
IPC分类号： H04R17/00 , H04R31/00
CPC分类号： H04R17/00 , G10K9/121 , H02N2/043 , H04R31/00 , Y10T29/49005
摘要： A flextensional transducer, including a generally disc-shaped piezoelectric member having a generally flat top surface and a generally flat parallel bottom surface, a top electrode formed on the top surface, a bottom electrode formed on the bottom surface, a top endcap operationally connected to the top surface, and a bottom endcap operationally connected to the bottom surface. The top and bottom endcaps are formed of shape memory material. The endcap exerts a radial stress upon the generally disc-shaped piezoelectric member.
摘要翻译：一种弯曲换能器，包括具有大致平坦的顶表面和大致平坦的平行底表面的大致圆盘形的压电元件，形成在顶表面上的顶部电极，形成在底表面上的底部电极，顶端盖，可操作地连接到顶表面和可操作地连接到底表面的底端盖。顶端和底端由形状记忆材料形成。端盖在大致圆盘形的压电元件上施加径向应力。

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