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1. 发明申请

US20080179606A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20080179606A1
公开(公告)日：2008-07-31
申请号：US11971467
申请日：2008-01-09
申请人： Manabu USUDA , Tetsuzo Ueda , Kenji Orita
发明人： Manabu USUDA , Tetsuzo Ueda , Kenji Orita
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/02 , H01L33/10 , H01L33/105 , H01L33/20 , H01L33/382 , H01L2933/0083
摘要： A nitride semiconductor light emitting device includes a substrate formed of silicon, an insulating film formed on the substrate and a single crystal thin film formed on the insulating film. On the single crystal film, a semiconductor laminated body including a light emitting layer of nitride semiconductor is formed.
摘要翻译：氮化物半导体发光器件包括由硅形成的衬底，形成在衬底上的绝缘膜和形成在绝缘膜上的单晶薄膜。在单晶膜上形成包括氮化物半导体发光层的半导体层叠体。

2. 发明授权

US07518153B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07518153B2
公开(公告)日：2009-04-14
申请号：US11971467
申请日：2008-01-09
申请人： Manabu Usuda , Tetsuzo Ueda , Kenji Orita
发明人： Manabu Usuda , Tetsuzo Ueda , Kenji Orita
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/02 , H01L33/10 , H01L33/105 , H01L33/20 , H01L33/382 , H01L2933/0083
摘要： A nitride semiconductor light emitting device includes a substrate formed of silicon, an insulating film formed on the substrate and a single crystal thin film formed on the insulating film. On the single crystal film, a semiconductor laminated body including a light emitting layer of nitride semiconductor is formed.
摘要翻译：氮化物半导体发光器件包括由硅形成的衬底，形成在衬底上的绝缘膜和形成在绝缘膜上的单晶薄膜。在单晶膜上形成包括氮化物半导体发光层的半导体层叠体。

3. 发明授权

US08283677B2 Nitride semiconductor light-emitting device 失效
标题翻译：氮化物半导体发光器件
公开(公告)号：US08283677B2
公开(公告)日：2012-10-09
申请号：US12933283
申请日：2009-02-02
申请人： Toshiyuki Takizawa , Tetsuzo Ueda , Manabu Usuda
发明人： Toshiyuki Takizawa , Tetsuzo Ueda , Manabu Usuda
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： H01L21/02433 , B82Y20/00 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/08 , H01L33/20 , H01L33/24 , H01L2933/0016 , H01S5/34333
摘要： A nitride semiconductor light-emitting device includes a substrate (101) made of silicon, a mask film (102) made of silicon oxide, formed on a principal surface of the substrate (101), and having at least one opening (102a), a seed layer (104) made of GaN selectively formed on the substrate (101) in the opening (102a), an LEG layer (105) formed on a side surface of the seed layer (104), and an n-type GaN layer (106), an active layer (107), and a p-type GaN layer (108) which are formed on the LEG layer (105). The LEG layer (105) is formed by crystal growth using an organic nitrogen material as a nitrogen source.
摘要翻译：一种氮化物半导体发光器件，包括由硅制成的衬底（101），形成在衬底（101）的主表面上的由氧化硅制成的掩模膜（102），并具有至少一个开口（102a），在所述开口（102a）中的所述基板（101）上选择性地形成有GaN的种子层（104），形成在所述籽晶层（104）的侧面上的LEG层（105）和n型GaN层（106），有源层（107）和形成在LEG层（105）上的p型GaN层（108）。使用有机氮材料作为氮源，通过晶体生长形成LEG层（105）。

4. 发明申请

US20110012169A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 失效
标题翻译：氮化物半导体发光器件
公开(公告)号：US20110012169A1
公开(公告)日：2011-01-20
申请号：US12933283
申请日：2009-02-02
申请人： Toshiyuki Takizawa , Tetsuzo Ueda , Manabu Usuda
发明人： Toshiyuki Takizawa , Tetsuzo Ueda , Manabu Usuda
IPC分类号： H01L33/32
CPC分类号： H01L21/02433 , B82Y20/00 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/08 , H01L33/20 , H01L33/24 , H01L2933/0016 , H01S5/34333
摘要： A nitride semiconductor light-emitting device includes a substrate (101) made of silicon, a mask film (102) made of silicon oxide, formed on a principal surface of the substrate (101), and having at least one opening (102a), a seed layer (104) made of GaN selectively formed on the substrate (101) in the opening (102a), an LEG layer (105) formed on a side surface of the seed layer (104), and an n-type GaN layer (106), an active layer (107), and a p-type GaN layer (108) which are formed on the LEG layer (105). The LEG layer (105) is formed by crystal growth using an organic nitrogen material as a nitrogen source.
摘要翻译：一种氮化物半导体发光器件，包括由硅制成的衬底（101），形成在衬底（101）的主表面上的由氧化硅制成的掩模膜（102），并具有至少一个开口（102a），在所述开口（102a）中的所述基板（101）上选择性地形成有GaN的种子层（104），形成在所述籽晶层（104）的侧面上的LEG层（105）和n型GaN层（106），有源层（107）和形成在LEG层（105）上的p型GaN层（108）。使用有机氮材料作为氮源，通过晶体生长形成LEG层（105）。

5. 发明申请

US20070194327A1 Semiconductor light-emitting device and method for fabricating the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20070194327A1
公开(公告)日：2007-08-23
申请号：US11701427
申请日：2007-02-02
申请人： Tetsuzo Ueda , Kenji Orita
发明人： Tetsuzo Ueda , Kenji Orita
IPC分类号： H01L33/00 , H01L31/12 , H01L27/15 , H01L29/26
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/405 , H01L2933/0083
摘要： A semiconductor light-emitting device includes: a substrate; a plurality of semiconductor layers grown on the substrate and including an active layer; and an electrode formed on the semiconductor layers. An opening in which at least a portion of the semiconductor layers is exposed is formed in the substrate. The electrode faces the opening in the substrate and a portion of the substrate surrounding the opening.
摘要翻译：一种半导体发光器件包括：衬底; 在衬底上生长并包括有源层的多个半导体层; 以及形成在半导体层上的电极。在衬底中形成有露出至少一部分半导体层的开口。电极面向衬底中的开口和围绕开口的基底的一部分。

6. 发明授权

US07786491B2 Semiconductor light-emitting device comprising a plurality of semiconductor layers 失效
标题翻译：包括多个半导体层的半导体发光器件
公开(公告)号：US07786491B2
公开(公告)日：2010-08-31
申请号：US11701427
申请日：2007-02-02
申请人： Tetsuzo Ueda , Kenji Orita
发明人： Tetsuzo Ueda , Kenji Orita
IPC分类号： H01L29/267
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/405 , H01L2933/0083
摘要： A semiconductor light-emitting device includes: a substrate; a plurality of semiconductor layers grown on the substrate and including an active layer; and an electrode formed on the semiconductor layers. An opening in which at least a portion of the semiconductor layers is exposed is formed in the substrate. The electrode faces the opening in the substrate and a portion of the substrate surrounding the opening.
摘要翻译：一种半导体发光器件包括：衬底; 在衬底上生长并包括有源层的多个半导体层; 以及形成在半导体层上的电极。在衬底中形成有露出至少一部分半导体层的开口。电极面向衬底中的开口和围绕开口的基底的一部分。

7. 发明授权

US08872227B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US08872227B2
公开(公告)日：2014-10-28
申请号：US13402631
申请日：2012-02-22
申请人： Hidekazu Umeda , Yoshiharu Anda , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hidekazu Umeda , Yoshiharu Anda , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/66 , H01L29/778 , H01L29/417 , H01L29/20
CPC分类号： H01L29/2003 , H01L29/1066 , H01L29/4175 , H01L29/66462 , H01L29/7787 , H01L29/861
摘要： A nitride semiconductor device includes a semiconductor substrate, and a nitride semiconductor layer formed on the semiconductor substrate. The semiconductor substrate includes a normal region and an interface current block region surrounding the normal region. The nitride semiconductor layer includes an element region and an isolation region surrounding the element region. The element region is formed over the normal region. The interface current block region contains impurities, and forms a potential barrier against carriers generated at an interface between the nitride semiconductor layer and the semiconductor substrate.
摘要翻译：氮化物半导体器件包括半导体衬底和形成在半导体衬底上的氮化物半导体层。半导体衬底包括正常区域和围绕法线区域的界面电流阻挡区域。氮化物半导体层包括元件区域和围绕元件区域的隔离区域。元件区域形成在正常区域上。界面电流阻挡区域含有杂质，并且在氮化物半导体层和半导体衬底之间的界面处产生的载流子形成势垒。

8. 发明授权

US08779438B2 Field-effect transistor with nitride semiconductor and method for fabricating the same 有权
标题翻译：具有氮化物半导体的场效应晶体管及其制造方法
公开(公告)号：US08779438B2
公开(公告)日：2014-07-15
申请号：US13569014
申请日：2012-08-07
申请人： Masahiro Hikita , Tetsuzo Ueda , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
发明人： Masahiro Hikita , Tetsuzo Ueda , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
IPC分类号： H01L29/15 , H01L31/0256 , H01L29/66 , H01L21/02 , H01L29/78
CPC分类号： H01L29/7786 , H01L29/0843 , H01L29/1066 , H01L29/2003 , H01L29/432 , H01L29/66462 , H01L29/7783
摘要： An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.
摘要翻译：依次形成AlN缓冲层，未掺杂的GaN层，未掺杂的AlGaN层，p型GaN层和重掺杂的p型GaN层。栅电极与重掺杂的p型GaN层形成欧姆接触。源电极和漏电极设置在未掺杂的AlGaN层上。通过在未掺杂的AlGaN层和未掺杂的GaN层和p型GaN层之间的界面处产生的二维电子气在栅极区域中形成pn结，从而可以提高栅极电压。

9. 发明授权

US08742467B2 Bidirectional switching device and bidirectional switching circuit using the same 有权
标题翻译：双向开关器件和双向开关电路使用相同
公开(公告)号：US08742467B2
公开(公告)日：2014-06-03
申请号：US13613724
申请日：2012-09-13
申请人： Tatsuo Morita , Daisuke Ueda , Yasuhiro Uemoto , Tetsuzo Ueda
发明人： Tatsuo Morita , Daisuke Ueda , Yasuhiro Uemoto , Tetsuzo Ueda
IPC分类号： H01L29/772 , H01L29/778
CPC分类号： H01L29/7787 , H01L27/0605 , H01L29/1066 , H01L29/2003
摘要： A bidirectional switching device includes a semiconductor multilayer structure made of a nitride semiconductor, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor multilayer structure, and a first gate electrode and a second gate electrode. The first gate electrode is covered with a first shield electrode having a potential substantially equal to that of the first ohmic electrode. The second gate electrode is covered with the second shield electrode having a potential substantially equal to that of the second ohmic electrode. An end of the first shield electrode is positioned between the first gate electrode and the second gate electrode, and an end of the second shield electrode is positioned between the second gate electrode and the first gate electrode.
摘要翻译：双向开关器件包括由半导体多层结构上形成的由氮化物半导体，第一欧姆电极和第二欧姆电极构成的半导体多层结构以及第一栅电极和第二栅电极。第一栅电极被第一屏蔽电极覆盖，该第一屏蔽电极的电位基本上等于第一欧姆电极的电位。第二栅电极被第二屏蔽电极覆盖，其电位基本上等于第二欧姆电极的电位。第一屏蔽电极的端部位于第一栅极电极和第二栅极电极之间，第二屏蔽电极的端部位于第二栅极电极和第一栅极电极之间。

10. 发明授权

US08569797B2 Field effect transistor and method of manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US08569797B2
公开(公告)日：2013-10-29
申请号：US13185818
申请日：2011-07-19
申请人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda
发明人： Hidekazu Umeda , Masahiro Hikita , Tetsuzo Ueda
IPC分类号： H01L29/80
CPC分类号： H01L29/7783 , H01L29/1066 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A field-effect transistor includes a first semiconductor layer formed on a substrate, and a second semiconductor layer. The first semiconductor layer has a containing region provided as an isolation region which contains non-conductive impurities, and a non-containing region which contains no non-conductive impurities. A first region is defined by a vicinity of a portion of the interface between the containing region and the non-containing region, the portion of the interface being below a gate electrode, the vicinity including the portion of the interface and being included in the containing region. The second semiconductor layer includes a second region which is located directly above the first region. The concentration of the non-conductive impurities of the second region is lower than that of the first region.
摘要翻译：场效应晶体管包括形成在衬底上的第一半导体层和第二半导体层。第一半导体层具有设置为包含非导电杂质的隔离区域的含有区域和不含非导电杂质的非含有区域。第一区域由容纳区域和非含有区域之间的界面的一部分的附近限定，界面的部分在栅电极下方，包括界面部分的附近包含在包含地区。第二半导体层包括位于第一区域正上方的第二区域。第二区域的非导电性杂质的浓度低于第一区域的浓度。

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