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1. 发明授权

US06420760B2 Thin film transistor manufacturing method and thin film transistor 失效
公开(公告)号：US06420760B2
公开(公告)日：2002-07-16
申请号：US09941980
申请日：2001-08-29
申请人： Mamoru Furuta , Koji Soma
发明人： Mamoru Furuta , Koji Soma
IPC分类号： H01L2362
CPC分类号： H01L29/66757 , H01L29/78621
摘要： A first insulation film is formed as a gate insulation film of a thin film transistor, and a gate electrode is formed on the gate insulation film. Then, dopant is implanted to form source and drain regions. A second insulation film having refractive index n1 and film thickness d2 is formed to cover the first insulation film and gate electrode as an interlayer insulation film. After forming the second insulation film, laser with wavelength &lgr; is applied to activate the dopant. The film thicknesses d1 and d2 of the first and second insulation films satisfy conditions against the laser wavelength &lgr; for forming a reflection protective film at regions where activation is necessary. At the same time, the film thicknesses d1 and d2 are set in a way that the interlayer insulation film on the gate electrode forms a reflective film. This reduces the thermal damage to the gate electrode from the laser during dopant activation.

2. 发明授权

US06309917B1 Thin film transistor manufacturing method and thin film transistor 失效
标题翻译：薄膜晶体管制造方法和薄膜晶体管
公开(公告)号：US06309917B1
公开(公告)日：2001-10-30
申请号：US09566609
申请日：2000-05-09
申请人： Mamoru Furuta , Koji Soma
发明人： Mamoru Furuta , Koji Soma
IPC分类号： H01L2176
CPC分类号： H01L29/66757 , H01L29/78621
摘要： A first insulation film is formed as a gate insulation film of a thin film transistor, and a gate electrode is formed on the gate insulation film. Then, dopant is implanted to form source and drain regions. A second insulation film having refractive index n1 and film thickness d2 is formed to cover the first insulation film and gate electrode as an interlayer insulation film. After forming the second insulation film, laser with wavelength &lgr; is applied to activate the dopant. The film thicknesses d1 and d2 of the first and second insulation films satisfy conditions against the laser wavelength &lgr; for forming a reflection protective film at regions where activation is necessary. At the same time, the film thicknesses d1 and d2 are set in a way that the interlayer insulation film on the gate electrode forms a reflective film. This reduces the thermal damage to the gate electrode from the laser during dopant activation.
摘要翻译：形成第一绝缘膜作为薄膜晶体管的栅极绝缘膜，并且在栅极绝缘膜上形成栅电极。然后，注入掺杂剂以形成源区和漏区。形成具有折射率n1和膜厚度d2的第二绝缘膜，以覆盖作为层间绝缘膜的第一绝缘膜和栅电极。在形成第二绝缘膜之后，施加具有波长羔羊的激光以激活掺杂剂。第一绝缘膜和第二绝缘膜的膜厚d1和d2满足在需要激活的区域形成反射保护膜的激光波长范围的条件。同时，以使得栅电极上的层间绝缘膜形成反射膜的方式设定膜厚度d1和d2。这在掺杂剂激活期间减少了来自激光器的栅电极的热损伤。

3. 发明授权

US07173681B2 Two pixel electrodes interposing the signal line extending into without extending beyond the recess on the protection film caused by the contact hole 有权
标题翻译：两个像素电极将信号线插入而不延伸超过由接触孔引起的保护膜上的凹槽
公开(公告)号：US07173681B2
公开(公告)日：2007-02-06
申请号：US10770409
申请日：2004-02-04
申请人： Hideyuki Takahashi , Kohei Nagayama , Mamoru Furuta , Shinichi Kawamura , Toshihiro Ninomiya , Koji Soma
发明人： Hideyuki Takahashi , Kohei Nagayama , Mamoru Furuta , Shinichi Kawamura , Toshihiro Ninomiya , Koji Soma
IPC分类号： G02F1/13333
CPC分类号： G02F1/136227 , H01L27/12 , H01L27/1244 , H01L27/1248
摘要： In an electrode substrate used in a liquid crystal display device, a contact hole for connecting a signal line to a drain electrode of a pixel thin film transistor is provided in a position overlapping a pixel electrode in order to improve yields by reducing a short circuit between adjacent pixel electrodes. With this configuration, the contact hole does not exist at a boundary between the two adjacent pixel electrodes. Accordingly, the pixel electrodes do not suffer an influence of an electrode material remaining at a recess of the contact hole, and a short circuit between the adjacent pixel electrodes can be thereby prevented.
摘要翻译：在用于液晶显示装置的电极基板中，将与信号线连接的像素薄膜晶体管的漏电极的接触孔设置在与像素电极重叠的位置，以便通过减少像素电极之间的短路来提高产量相邻像素电极。利用这种构造，在两个相邻像素电极之间的边界处不存在接触孔。因此，像素电极不会受到留在接触孔的凹部的电极材料的影响，从而可以防止相邻的像素电极之间的短路。

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