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1. 发明授权

US09508375B2 Modification of magnetic properties of films using ion and neutral beam implantation 有权
标题翻译：使用离子和中性束注入改性膜的磁性能
公开(公告)号：US09508375B2
公开(公告)日：2016-11-29
申请号：US12759597
申请日：2010-04-13
申请人： Majeed A. Foad , Nir Merry
发明人： Majeed A. Foad , Nir Merry
IPC分类号： C23C14/04 , C23C14/58 , C23C14/48 , G11B5/86 , B82Y10/00 , G11B5/74 , G11B5/855
CPC分类号： G11B5/865 , B82Y10/00 , C23C14/042 , C23C14/48 , C23C14/5826 , C23C14/5833 , C23C14/5853 , G11B5/743 , G11B5/746 , G11B5/855 , H01J2237/316 , H01J2237/3165 , H01J2237/31711
摘要： Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on the substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of alternative processes that expose substrates to energy of varying forms.
摘要翻译：提供了用于形成具有磁性图案化表面的基底的方法和设备。在基板上形成包含一种或多种具有磁性的材料的磁性层。对磁性层进行图案化处理，其中磁性层的表面的选定部分被改变，使得改变的部分与未改变的部分具有不同的磁性，而不改变衬底的形貌。在图案化的磁性层上沉积保护层和润滑剂层。图案化是通过将衬底暴露于不同形式的能量的许多替代工艺完成的。

2. 发明授权

US09018110B2 Apparatus and methods for microwave processing of semiconductor substrates 有权
标题翻译：半导体衬底的微波处理装置和方法
公开(公告)号：US09018110B2
公开(公告)日：2015-04-28
申请号：US14112012
申请日：2012-03-29
申请人： Michael W. Stowell , Majeed A. Foad , Ralf Hofmann , Wolfgang R. Aderhold , Stephen Moffatt
发明人： Michael W. Stowell , Majeed A. Foad , Ralf Hofmann , Wolfgang R. Aderhold , Stephen Moffatt
IPC分类号： H01L23/66 , H01L21/263 , H01L21/324 , H01L21/67 , H05B6/70
CPC分类号： H01L21/263 , H01L21/324 , H01L21/67115 , H05B6/702 , H05B6/708
摘要： Methods and apparatus for radiation processing of semiconductor substrates using microwave or millimeter wave energy are provided. The microwave or millimeter wave energy may have a frequency between about 600 MHz and about 1 THz. Alternating current from a magnetron is coupled to a leaky microwave emitter that has an inner conductor and an outer conductor, the outer conductor having openings with a dimension smaller than a wavelength of the emitted radiation. The inner and outer conductors are separated by an insulating material. Interference patterns produced by the microwave emissions may be uniformized by phase modulating the power to the emitter and/or by frequency modulating the frequency of the power itself. Power from a single generator may be divided to two or more emitters by a power divider.
摘要翻译：提供了使用微波或毫米波能量的半导体衬底的辐射处理方法和装置。微波或毫米波能量可以具有在约600MHz和约1THz之间的频率。来自磁控管的交流电耦合到具有内部导体和外部导体的泄漏的微波发射器，该外部导体具有尺寸小于所发射的辐射的波长的开口。内外导体由绝缘材料分开。由微波发射产生的干扰模式可以通过相位调制发射器的功率和/或通过频率调制电源本身的频率而被均匀化。来自单个发电机的功率可以由功率分配器划分为两个或更多个发射器。

3. 发明授权

US08747942B2 Carbon nanotube-based solar cells 有权
标题翻译：基于碳纳米管的太阳能电池
公开(公告)号：US08747942B2
公开(公告)日：2014-06-10
申请号：US12797529
申请日：2010-06-09
申请人： Omkaram Nalamasu , Charles Gay , Victor L. Pushparaj , Kaushal K. Singh , Robert J. Visser , Majeed A. Foad , Ralf Hofmann
发明人： Omkaram Nalamasu , Charles Gay , Victor L. Pushparaj , Kaushal K. Singh , Robert J. Visser , Majeed A. Foad , Ralf Hofmann
IPC分类号： B05D5/12
CPC分类号： H01L31/022425 , B82Y10/00 , H01L31/0322 , H01L31/03529 , H01L31/0384 , H01L31/0749 , H01L51/0048 , H01L51/4213 , Y02E10/541 , Y02P70/521
摘要： Solar cells are provided with carbon nanotubes (CNTs) which are used: to define a micron/sub-micron geometry of the solar cells; and/or as charge transporters for efficiently removing charge carriers from the absorber layer to reduce the rate of electron-hole recombination in the absorber layer. A solar cell may comprise: a substrate; a multiplicity of areas of metal catalyst on the surface of the substrate; a multiplicity of carbon nanotube bundles formed on the multiplicity of areas of metal catalyst, each bundle including carbon nanotubes aligned roughly perpendicular to the surface of the substrate; and a photoactive solar cell layer formed over the carbon nanotube bundles and exposed surfaces of the substrate, wherein the photoactive solar cell layer is continuous over the carbon nanotube bundles and the exposed surfaces of the substrate. The photoactive solar cell layer may be comprised of amorphous silicon p/i/n thin films; although, concepts of the present invention are also applicable to solar cells with absorber layers of microcrystalline silicon, SiGe, carbon doped microcrystalline silicon, CIS, CIGS, CISSe and various p-type II-VI binary compounds and ternary and quaternary compounds.
摘要翻译：太阳能电池提供有碳纳米管（CNT），其用于限定太阳能电池的微米/亚微米几何形状; 和/或作为电荷转运体，用于从吸收层有效去除电荷载体以降低吸收层中电子 - 空穴复合的速率。太阳能电池可以包括：基底; 在基材表面上的金属催化剂的多个区域; 形成在金属催化剂的多个区域上的多个碳纳米管束，每个束包括大致垂直于基板的表面排列的碳纳米管; 以及形成在所述碳纳米管束和所述基板的露出表面上的光活性太阳能电池层，其中所述光电太阳能电池层在所述碳纳米管束和所述基板的暴露表面上连续。光电太阳能电池层可以由非晶硅p / i / n薄膜组成; 尽管本发明的概念也适用于具有微晶硅，SiGe，碳掺杂微晶硅，CIS，CIGS，CISSe和各种p型II-VI二元化合物和三元和四元化合物的吸收层的太阳能电池。

4. 发明授权

US08709924B2 Method for conformal plasma immersed ion implantation assisted by atomic layer deposition 有权
标题翻译：通过原子层沉积辅助等离子体沉积离子注入的方法
公开(公告)号：US08709924B2
公开(公告)日：2014-04-29
申请号：US13038199
申请日：2011-03-01
申请人： Hiroji Hanawa , Seon-Mee Cho , Majeed A. Foad
发明人： Hiroji Hanawa , Seon-Mee Cho , Majeed A. Foad
IPC分类号： H01L21/205 , H01L21/22
CPC分类号： H01L21/2236 , C23C16/45536 , C23C16/505 , C23C16/56
摘要： Embodiments of the invention provide a novel apparatus and methods for forming a conformal doped layer on the surface of a substrate. A substrate is provided to a process chamber, and a layer of dopant source material is deposited by plasma deposition, atomic layer deposition, or plasma-assisted atomic layer deposition. The substrate is then subjected to thermal processing to activate and diffuse dopants into the substrate surface.
摘要翻译：本发明的实施例提供了一种用于在衬底的表面上形成共形掺杂层的新型设备和方法。将衬底提供到处理室，并且通过等离子体沉积，原子层沉积或等离子体辅助原子层沉积沉积掺杂剂源材料层。然后对衬底进行热处理以激活并将掺杂剂扩散到衬底表面中。

5. 发明授权

US08273624B2 Plasma immersed ion implantation process using balanced etch-deposition process 有权
标题翻译：使用平衡蚀刻沉积工艺的等离子体浸入式离子注入工艺
公开(公告)号：US08273624B2
公开(公告)日：2012-09-25
申请号：US12941526
申请日：2010-11-08
申请人： Peter Porshnev , Majeed A. Foad
发明人： Peter Porshnev , Majeed A. Foad
IPC分类号： H01L21/8242
CPC分类号： H01L21/2236 , H01L29/66575
摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, generating a plasma from a gas mixture including a reacting gas and a etching gas in the chamber, adjusting the ratio between the reacting gas and the etching gas in the supplied gas mixture and implanting ions from the plasma into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a halogen containing reducing gas into the chamber, forming a plasma from the gas mixture, gradually increasing the ratio of the etching gas in the gas mixture, and implanting ions from the gas mixture into the substrate.
摘要翻译：提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。在一个实施例中，用于将离子注入到衬底中的方法包括将衬底提供到处理室中，从腔室中的包括反应气体和蚀刻气体的气体混合物产生等离子体，调节反应气体与蚀刻物之间的比例在所提供的气体混合物中的气体和从等离子体离子注入衬底。在另一个实施方案中，该方法包括将基底提供到处理室中，将包含反应气体和含卤素的还原气体的气体混合物供应到室中，从气体混合物形成等离子体，逐渐增加蚀刻气体的比例气体混合物，并将离子从气体混合物中注入衬底中。

6. 发明申请

US20110207307A1 PLASMA IMMERSION ION IMPLANTATION METHOD USING A PURE OR NEARLY PURE SILICON SEASONING LAYER ON THE CHAMBER INTERIOR SURFACES 有权
标题翻译：等离子体沉淀离子植入方法在室内表面上使用纯的或近乎纯的硅的季铵盐
公开(公告)号：US20110207307A1
公开(公告)日：2011-08-25
申请号：US13101843
申请日：2011-05-05
申请人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
发明人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
IPC分类号： H01L21/265
CPC分类号： H01J37/32412 , C23C14/48 , C23C14/564 , H01L21/2236
摘要： Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.
摘要翻译：在静电卡盘上采用非常高的RF偏置电压以获得必要的植入深度分布的等离子体浸没离子注入是通过在晶片引入之前首先在内部腔室表面上沉积部分导电的含硅调节层来进行的。

7. 发明申请

US20100261040A1 MODIFICATION OF MAGNETIC PROPERTIES OF FILMS USING ION AND NEUTRAL BEAM IMPLANTATION 有权
标题翻译：使用离子和中性光束植入修改膜的磁性
公开(公告)号：US20100261040A1
公开(公告)日：2010-10-14
申请号：US12759597
申请日：2010-04-13
申请人： Majeed A. Foad , Nir Merry
发明人： Majeed A. Foad , Nir Merry
IPC分类号： G11B5/33 , C23C14/04 , C23C14/48
CPC分类号： G11B5/865 , B82Y10/00 , C23C14/042 , C23C14/48 , C23C14/5826 , C23C14/5833 , C23C14/5853 , G11B5/743 , G11B5/746 , G11B5/855 , H01J2237/316 , H01J2237/3165 , H01J2237/31711
摘要： Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on the substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of alternative processes that expose substrates to energy of varying forms.
摘要翻译：提供了用于形成具有磁性图案化表面的基底的方法和设备。在基板上形成包含一种或多种具有磁性的材料的磁性层。对磁性层进行图案化处理，其中磁性层的表面的选定部分被改变，使得改变的部分与未改变的部分具有不同的磁性，而不改变衬底的形貌。在图案化的磁性层上沉积保护层和润滑剂层。图案化是通过将衬底暴露于不同形式的能量的许多替代工艺完成的。

8. 发明申请

US20100258758A1 HDD PATTERN APPARATUS USING LASER, E-BEAM, OR FOCUSED ION BEAM 有权
标题翻译：使用激光，电子束或聚焦离子束的硬盘图案设备
公开(公告)号：US20100258758A1
公开(公告)日：2010-10-14
申请号：US12759587
申请日：2010-04-13
申请人： Majeed A. Foad , Stephen Moffatt
发明人： Majeed A. Foad , Stephen Moffatt
IPC分类号： G03F7/20 , G03B27/42 , H01F1/00
CPC分类号： G03B27/42 , G11B5/8404 , H01F10/187 , H01F41/34
摘要： A method and apparatus for manufacturing magnetic storage media is provided. A structural substrate is coated with a magnetically active material, and a magnetic pattern is formed in the magnetically active material by treating portions of the material with energy from a laser, e-beam, or focused ion beam. The beam may be divided into a packet of beamlets by passing the beam through a divider, which may be a diffraction grating for laser energy, a thin film single crystal for electrons, or a perforated plate for ions, or the beam may be generated by an array of emitters. The beamlets are then focused to a desired dimension and distribution by optics or electric fields. The resulting beam packet may be shaped further by passing through an aperture of any desired shape. The resulting beam may be applied sequentially to exposure zones to treat an entire substrate or plurality of substrates.
摘要翻译：提供了一种用于制造磁存储介质的方法和装置。用磁性活性材料涂覆结构基材，通过用激光，电子束或聚焦离子束的能量处理材料的部分，在磁性活性材料中形成磁性图案。通过将光束通过分隔器（可以是用于激光能量的衍射光栅），用于电子的薄膜单晶或用于离子的多孔板，可以将光束分成束分束，或者可以通过一组发射器。然后通过光学或电场将子束聚焦到期望的尺寸和分布。所得到的束束可以进一步通过穿过任何所需形状的孔。所得到的光束可以顺序施加到曝光区域以处理整个基板或多个基板。

9. 发明申请

US20100216258A1 METHOD FOR MEASURING DOPANT CONCENTRATION DURING PLASMA ION IMPLANTATION 有权
标题翻译：在等离子体植入过程中测量痰浓度的方法
公开(公告)号：US20100216258A1
公开(公告)日：2010-08-26
申请号：US12777085
申请日：2010-05-10
申请人： Majeed A. Foad , Shijian Li
发明人： Majeed A. Foad , Shijian Li
IPC分类号： H01L21/66
CPC分类号： G01N21/68 , G01N21/59 , H01L21/26513 , H01L22/12 , H01L22/26
摘要： Embodiments of the invention generally provide methods for end point detection at predetermined dopant concentrations during plasma doping processes. In one embodiment, a method includes positioning a substrate within a process chamber, generating a plasma above the substrate and transmitting a light generated by the plasma through the substrate, wherein the light enters the topside and exits the backside of the substrate, and receiving the light by a sensor positioned below the substrate. The method further provides generating a signal proportional to the light received by the sensor, implanting the substrate with a dopant during a doping process, generating multiple light signals proportional to a decreasing amount of the light received by the sensor during the doping process, generating an end point signal proportional to the light received by the sensor once the substrate has a final dopant concentration, and ceasing the doping process.
摘要翻译：本发明的实施方案通常提供了在等离子体掺杂过程期间以预定掺杂剂浓度进行终点检测的方法。在一个实施例中，一种方法包括将衬底定位在处理室内，在衬底上方产生等离子体，并将由等离子体产生的光透射穿过衬底，其中光进入顶侧并离开衬底的背面，并接收通过位于基板下方的传感器进行光照射。该方法进一步提供产生与传感器接收的光成比例的信号，在掺杂过程期间用掺杂剂注入衬底，在掺杂过程期间产生与传感器接收的减少量的光成比例的多个光信号，产生一旦衬底具有最终的掺杂剂浓度，终点信号与传感器接收的光成比例，并停止掺杂过程。

10. 发明授权

US07674723B2 Plasma immersion ion implantation using an electrode with edge-effect suppression by a downwardly curving edge 失效
标题翻译：使用具有通过向下弯曲边缘的边缘效应抑制的电极的等离子体浸没离子注入
公开(公告)号：US07674723B2
公开(公告)日：2010-03-09
申请号：US12069425
申请日：2008-02-06
申请人： Peter I. Porshnev , Majeed A. Foad
发明人： Peter I. Porshnev , Majeed A. Foad
IPC分类号： H01L21/31 , H01L21/469 , C23C16/00
CPC分类号： C23C14/48 , H01J37/32082 , H01J37/32412 , H01J37/32541 , H01J37/32706
摘要： In a plasma reactor, RF bias power is applied from an RF bias power generator to a disk-shaped electrode underlying and insulated from a workpiece and having a circumferential edge underlying a circumferential edge of the workpiece. The RF bias power is sufficient to produce a high RF bias voltage on the workpiece on the order of 0.5-20 kV. Non-uniformity in distribution of plasma across the workpiece is reduced by providing a curvature in a peripheral edge annulus of said electrode whereby the peripheral annulus slopes away from the workpiece support surface. The peripheral edge annulus corresponds to a small fraction of an area of said electrode. The remainder of the electrode encircled by the peripheral annulus has a flat shape.
摘要翻译：在等离子体反应器中，RF偏置功率从RF偏置功率发生器施加到下面并与工件绝缘并且具有位于工件的圆周边缘周围的圆周边缘的盘形电极。 RF偏压功率足以在工件上产生大约0.5-20 kV的高RF偏置电压。通过在所述电极的外围边缘环中提供曲率来减小跨过工件的等离子体分布的不均匀性，由此外围环形空间远离工件支撑表面。外围边缘环对应于所述电极的一小部分面积。由外围环圈包围的电极的其余部分具有平坦的形状。

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