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1. 发明授权

US3832202A Liquid silica source for semiconductors liquid silica source for semiconductors 失效
标题翻译：半导体液体二氧化硅源半导体液体二氧化硅源
公开(公告)号：US3832202A
公开(公告)日：1974-08-27
申请号：US27883372
申请日：1972-08-08
申请人： MOTOROLA INC , MOTOROLA INC
发明人： RITCHIE K , RITCHIE K
IPC分类号： C23C22/00 , C01B33/145 , H01L21/316 , H01L33/00 , C09K3/00
CPC分类号： H01L21/316 , C01B33/145 , H01L33/00 , Y10S148/043 , Y10S148/118
摘要： THERE IS DISCLOSED A LIQUID SILICA SOURCE FOR SEMICONDUCTOR DIFFUSIONS WHICH COMPRISES IN COMBINATION 54-64% ETHYL ALCOHOL, 11-21% ETHYL ACETATE, 13-63% TETRAETHYLORTHOSILICATE, AND 3-10% WATER AND 1-8% VINYL TRICHLOROSILANE, SAID PERCENTAGES BEING BY WEIGHT. THE LIQUID SILICA SOURCE MAY BE READILY COATED ONTO THE SEMICONDUCTOR WAFER EITHER BY PAINTING, SPRAYING OR PERFERABLY SPINNING.

2. 发明授权

US3789023A Liquid diffusion dopant source for semiconductors 失效
标题翻译：液体扩散源的半导体源
公开(公告)号：US3789023A
公开(公告)日：1974-01-29
申请号：US3789023D
申请日：1972-08-09
申请人： MOTOROLA INC
发明人： RITCHIE K
IPC分类号： H01L21/00 , H01L21/22 , H01L21/225 , C09K3/00 , H01B1/06 , H05B33/00
CPC分类号： H01L21/2255 , H01L21/00 , H01L21/2225 , Y10S148/118 , Y10S148/151 , Y10S252/95
摘要： THERE IS DISCLOSED A LIQUID DIFFUSION DOPANT SOURCE FOR SEMICONDUCTOR DIFFUSIONS WHICH COMPRISES IN COMBINATION 54-64% ETHYL ALCOHOL, 15-25% ETHYL ACETATE, 7-17% TETRAETHYLSILICATE, 3-10% WATER AND 0.1-10% OF A DOPING ATOM SORUCE SELECTED FROM THE GROUP CONSISTING OF THE COMPOUNDS OF ARSENIC, PHOSPHORUS, BORON ANTIMONY, ZINC, ALUMINUM, PLATINUM, GOLD AND GALLIUM. THE LIQUID DOPANT SOURCE MAY BE READILY COATED ONTO THE SEMICONDUCTOR WAFER EITHER BY PAINTING, SPRAYING OR PREFERABLY SPINNING. AFTER DRYING OF THE COATING, DIFFUSION OF THE DOPANT ATOMS INTO THE WAFER IS READILY CONDUCTED IN A STANDARD DIFFUSION FURNACE.

3. 发明授权

US3770499A Liquid phase deposition of thin insulating and refractory film on a substrate 失效
$Liquid phase deposition of thin insulating and refractory film on a substrate$
标题翻译：基板上的薄绝缘膜和薄膜的液相沉积
公开(公告)号：US3770499A
公开(公告)日：1973-11-06
申请号：US3770499D
申请日：1972-02-28
申请人： MOTOROLA INC
发明人： GUREV H , CROWE W , RITCHIE K
IPC分类号： C23F1/02 , B44D1/02 , B44D1/20
CPC分类号： C23F1/02 , Y10S148/017 , Y10S148/118
摘要： It is known to deposit zirconium dioxide, ZrO2, on a substrate comprising a chip or wafer by providing zirconium oxychloride, ZrOCl2, vapor at about 550* C, the chip or wafer being at 450* C, in an atmosphere containing water vapor. Zirconium dioxide, ZrO2, and hydrochloric acid, HCl, are produced and a layer of the ZrO2 is deposited on the chip. The ZrO2 layer acts as a passivation material having high resistivity and very good impermeability to sodium which can be destructive of the circuit on the chip or wafer. According to this invention, the ZrO2 may be deposited on a substrate at a lower temperature from a liquid solution of the zirconium oxychloride, whereby the substrate may be paper or plastic and whereby the substrate if it includes a circuit will not be injured by the temperature needed by the prior art high temperature treatment, and therefore the possible injury to the substrate or to the circuit therein by the prior art high temperature treatment is avoided.
摘要翻译：已知在含有水蒸汽的气氛中，通过在约550℃（芯片或晶片）在450℃下，通过提供氧氯化锆，ZrOCl 2，蒸气将包含芯片或晶片的二氧化锆ZrO 2沉积在二氧化锆上。产生二氧化锆，ZrO 2和盐酸HCl，并将一层ZrO 2沉积在芯片上。 ZrO 2层用作具有高电阻率和对钠的非常好的不渗透性的钝化材料，其可能破坏芯片或晶片上的电路。根据本发明，ZrO 2可以在较低的温度下从氯氧化锆的液体溶液沉积在基底上，由此基底可以是纸或塑料，从而如果包括电路的基底将不会受到温度的损害通过现有技术的高温处理需要，因此避免了通过现有技术的高温处理对基板或其电路的可能的损伤。

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