专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10697078B2 Method of forming Cu plating, method of manufacturing Cu-plated substrate, and Cu-plated substrate 有权
公开(公告)号：US10697078B2
公开(公告)日：2020-06-30
申请号：US15772147
申请日：2015-11-12
申请人： Mitsubishi Electric Corporation
发明人： Yuji Sato , Jun Fujita , Motoru Yoshida , Kazuyo Endo
IPC分类号： C25D3/38 , C25D5/02 , C25D7/12
摘要： A method of forming Cu plating of the present invention includes: a first step of forming a Cu seed layer on one of surfaces of a substrate such that an average grain size is 50 nm or more and 300 nm or less; a second step of forming an oxide film on a surface of the Cu seed layer in an oxygen atmosphere; a third step of removing a part of the oxide film; and a fourth step of feeding power to the Cu seed layer to form Cu plating on a surface of the oxide film on the Cu seed layer by electrolytic plating.

2. 发明申请

US20150243530A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20150243530A1
公开(公告)日：2015-08-27
申请号：US14425142
申请日：2013-07-19
申请人： Mitsubishi Electric Corporation
发明人： Yoshinori Yokoyama , Kazuyo Endo , Jun Fujita , Shinnosuke Soda , Kazuyasu Nishikawa , Yoichi Nogami , Yoshitsugu Yamamoto , Akira Inoue
IPC分类号： H01L21/52 , H01L21/78
CPC分类号： H01L21/52 , H01L21/50 , H01L21/561 , H01L21/78 , H01L23/10 , H01L2924/0002 , H01L2924/00
摘要： A plurality of semiconductor element is formed on a substrate. A plurality of sealing windows and a support portion supporting the plurality of sealing windows are formed on a SOI substrate. The SOI substrate is pressured against the substrate by using a pressurizing member and the plurality of sealing windows of the SOI substrate is bonded to the substrate via a low melting point glass member arranged around the plurality of semiconductor elements. The support portion is separated from the plurality of sealing windows bonded to the substrate.
摘要翻译：在基板上形成多个半导体元件。在SOI衬底上形成有多个密封窗和支撑多个密封窗的支撑部。通过使用加压构件将SOI衬底压靠在衬底上，并且SOI衬底的多个密封窗口通过布置在多个半导体元件周围的低熔点玻璃构件接合到衬底。支撑部分与结合到基底的多个密封窗口分离。

3. 发明授权

US08816493B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08816493B2
公开(公告)日：2014-08-26
申请号：US13921695
申请日：2013-06-19
申请人： Mitsubishi Electric Corporation
发明人： Yoichi Nogami , Yoshitsugu Yamamoto , Akira Inoue , Yoshinori Yokoyama , Jun Fujita , Kazuyo Endo , Shinnosuke Soda , Kazuyasu Nishikawa
IPC分类号： H01L23/12 , H01L29/78 , H01L23/00 , H01L23/60
CPC分类号： H01L23/564 , H01L23/04 , H01L23/06 , H01L23/10 , H01L23/60 , H01L23/66 , H01L29/78 , H01L2223/6644 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a substrate; a semiconductor element on the substrate; an interconnection on the substrate and electrically connected to the semiconductor element; a window frame member on the substrate, surrounding the semiconductor element, and in contact with the interconnection; and a sealing window bonded to the window frame member and encapsulating the semiconductor element. The window frame member is a low melting glass and has a sheet resistance of 106-1010 Ω/□.
摘要翻译：半导体器件包括：衬底; 衬底上的半导体元件; 在所述基板上的与所述半导体元件电连接的互连; 在所述基板上的窗框构件，围绕所述半导体元件并与所述互连件接触; 以及密封窗，其结合到所述窗框构件并封装所述半导体元件。窗框构件是低熔点玻璃，并且具有106-1010＆OHgr / /□的薄层电阻。

4. 发明申请

US20140077280A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20140077280A1
公开(公告)日：2014-03-20
申请号：US13921695
申请日：2013-06-19
申请人： Mitsubishi Electric Corporation
发明人： Yoichi Nogami , Yoshitsugu Yamamoto , Akira Inoue , Yoshinori Yokoyama , Jun Fujita , Kazuyo Endo , Shinnosuke Soda , Kazuyasu Nishikawa
IPC分类号： H01L23/00 , H01L23/60 , H01L29/78
CPC分类号： H01L23/564 , H01L23/04 , H01L23/06 , H01L23/10 , H01L23/60 , H01L23/66 , H01L29/78 , H01L2223/6644 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a substrate; a semiconductor element on the substrate; an interconnection on the substrate and electrically connected to the semiconductor element; a window frame member on the substrate, surrounding the semiconductor element, and in contact with the interconnection; and a sealing window bonded to the window frame member and encapsulating the semiconductor element. The window frame member is a low melting glass and has a sheet resistance of 106-1010 Ω/□.
摘要翻译：半导体器件包括：衬底; 衬底上的半导体元件; 在所述基板上的与所述半导体元件电连接的互连; 在所述基板上的窗框构件，围绕所述半导体元件并与所述互连件接触; 以及密封窗，其结合到所述窗框构件并封装所述半导体元件。窗框构件是低熔点玻璃，并且具有106-1010＆OHgr / /□的薄层电阻。

5. 发明授权

US10529587B2 Semiconductor device and method of manufacturing semiconductor device 有权
公开(公告)号：US10529587B2
公开(公告)日：2020-01-07
申请号：US16098517
申请日：2017-05-15
申请人： Mitsubishi Electric Corporation
发明人： Yuji Sato , Motoru Yoshida , Jun Fujita
IPC分类号： H01L21/32 , H01L29/78 , H01L21/3205 , H01L23/522 , H01L21/768 , H01L21/311
摘要： A semiconductor device includes a semiconductor substrate, an insulating film, and an electrode. The semiconductor substrate includes a first surface. The insulating film is provided on the first surface of the semiconductor substrate and includes a second surface opposite to the first surface. The electrode is connected to the second surface of the insulating film and includes a side surface, a first face in contact with the insulating film, and a second face opposite to the first face. An outer periphery of the second face of the electrode is formed on an inner side of an outer periphery of the first face.

6. 发明申请

US20140251409A1 SOLAR CELL MODULE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：太阳能电池模块及其制造方法
公开(公告)号：US20140251409A1
公开(公告)日：2014-09-11
申请号：US14352114
申请日：2012-10-17
申请人： Mitsubishi Electric Corporation
发明人： Tsuneo Hamaguchi , Yoshimi Yabugaki , Daisuke Echizenya , Jun Fujita , Tomoo Takayama , Shinsuke Miyamoto
IPC分类号： H01L31/05 , H01L31/048
CPC分类号： H01L31/05 , H01L31/0512 , Y02E10/50
摘要： A solar cell module in the present invention includes: a wiring member electrically connecting solar cell elements to each other; and a structure in which a solder bonding portion is formed by bonding a collecting electrode, which is provided on a light receiving surface of the solar cell element, extends in a first direction parallel to the wiring member, and has a width smaller than that of the wiring member in a cross section vertical to the first direction, and the wiring member together by melting solder, a cross-sectional shape of the solder bonding portion vertical to the first direction has a shape that gradually narrows toward the collecting electrode from a lower surface of the wiring member, and a side surface of the solder bonding portion and a side surface of the wiring member are covered with a thermosetting resin.
摘要翻译：本发明的太阳能电池模块包括：将太阳能电池元件彼此电连接的配线部件; 并且通过结合设置在太阳能电池元件的受光面上的集电极而形成焊接接合部的结构，在与布线部件平行的第一方向上延伸，并且具有比所述布线构件在垂直于所述第一方向的横截面中，并且所述布线构件通过熔化焊料在一起，所述焊料接合部的与所述第一方向垂直的截面形状具有从下部朝向所述集电极逐渐变窄的形状布线部件的表面以及焊料接合部分的侧表面和布线部件的侧表面被热固性树脂覆盖。

7. 发明授权

US11264318B2 Semiconductor device, method for manufacturing the same, and semiconductor module 有权
公开(公告)号：US11264318B2
公开(公告)日：2022-03-01
申请号：US16479747
申请日：2018-01-15
申请人： Mitsubishi Electric Corporation
发明人： Yoshinori Yokoyama , Jun Fujita , Toshiaki Shinohara , Hiroshi Kobayashi
IPC分类号： H01L23/52 , H01L23/31 , H01L23/36 , H01L23/433
摘要： Provided is a semiconductor device free from chipping of a thin semiconductor element during transportation. The semiconductor device includes: a thin semiconductor element including a front-side electrode on the front side of the semiconductor element, and including a back-side electrode on the back side of the semiconductor element; a metallic member formed on at least one of the front-side electrode and the back-side electrode, the metallic member having a thickness equal to or greater than the thickness of the semiconductor element; and a resin member in contact with the lateral side of the metallic member and surrounding the periphery of the metallic member, with a part of the front side of the semiconductor element being exposed.

8. 发明授权

US11195803B2 Semiconductor element, semiconductor device, power conversion device, and method of manufacturing semiconductor element 有权
公开(公告)号：US11195803B2
公开(公告)日：2021-12-07
申请号：US16957109
申请日：2018-03-08
申请人： Mitsubishi Electric Corporation
发明人： Motoru Yoshida , Jun Fujita , Yuji Sato
IPC分类号： H01L23/00 , H01L21/311 , H01L23/29 , H01L23/31 , H01L23/367 , H01L23/373 , H01L29/45 , H02P27/08
摘要： An object is to provide a technique capable of suppressing a corrosion of a first electrode and a second electrode. A semiconductor element includes a semiconductor substrate, an Al electrode, a polyimide member selectively disposed on the Al electrode, and an Ni electrode. The polyimide member includes a protruding part which protrudes in a plane direction of an upper surface of the Al electrode and which has a lower portion having contact with the Al electrode in a cross-sectional view, in at least part of a peripheral part of the polyimide member in a top view. The Ni electrode is disposed on the Al electrode and the protruding part.

9. 发明授权

US10998436B2 Semiconductor device 有权
公开(公告)号：US10998436B2
公开(公告)日：2021-05-04
申请号：US16480945
申请日：2017-03-16
申请人： Mitsubishi Electric Corporation
发明人： Jun Fujita , Naoto Kaguchi , Fumio Wada
IPC分类号： H01L29/78 , H01L21/288 , H01L21/3213 , H01L23/00 , H01L29/45 , H01L29/66 , H01L29/739
摘要： A semiconductor device having high reliability is obtained. A semiconductor device includes a semiconductor substrate, a first gate interconnection, a second gate interconnection, a first metal portion, an insulating member, and a second metal portion. The first gate interconnection and the second gate interconnection are disposed on a main surface of the semiconductor substrate with an interval therebetween. The first metal portion is formed on the first gate interconnection and the second gate interconnection. The first metal portion has a top surface located opposite to the semiconductor substrate at a region between the first gate interconnection and the second gate interconnection. A recess is formed in the top surface. The insulating member fills at least a portion of the recess. The second metal portion extends from an upper surface of the insulating member onto the top surface of the first metal portion.

10. 发明授权

US09508564B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09508564B2
公开(公告)日：2016-11-29
申请号：US14425142
申请日：2013-07-19
申请人： Mitsubishi Electric Corporation
发明人： Yoshinori Yokoyama , Kazuyo Endo , Jun Fujita , Shinnosuke Soda , Kazuyasu Nishikawa , Yoichi Nogami , Yoshitsugu Yamamoto , Akira Inoue
IPC分类号： H01L21/00 , H01L21/52 , H01L23/10 , H01L21/50 , H01L21/56 , H01L21/78
CPC分类号： H01L21/52 , H01L21/50 , H01L21/561 , H01L21/78 , H01L23/10 , H01L2924/0002 , H01L2924/00
摘要： A plurality of semiconductor element is formed on a substrate. A plurality of sealing windows and a support portion supporting the plurality of sealing windows are formed on a SOI substrate. The SOI substrate is pressured against the substrate by using a pressurizing member and the plurality of sealing windows of the SOI substrate is bonded to the substrate via a low melting point glass member arranged around the plurality of semiconductor elements. The support portion is separated from the plurality of sealing windows bonded to the substrate.
摘要翻译：在基板上形成多个半导体元件。在SOI衬底上形成有多个密封窗和支撑多个密封窗的支撑部。通过使用加压构件将SOI衬底压靠在衬底上，并且SOI衬底的多个密封窗口通过布置在多个半导体元件周围的低熔点玻璃构件接合到衬底。支撑部分与结合到基底的多个密封窗口分离。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式