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1. 发明授权

US5291607A Microprocessor having environmental sensing capability 失效
标题翻译：具有环境感知能力的微处理器
公开(公告)号：US5291607A
公开(公告)日：1994-03-01
申请号：US965549
申请日：1992-10-23
申请人： Ljubisa Ristic , William C. Dunn , Bertrand F. Cambou , Lewis E. Terry , Raymond M. Roop
发明人： Ljubisa Ristic , William C. Dunn , Bertrand F. Cambou , Lewis E. Terry , Raymond M. Roop
IPC分类号： H02H5/00 , G06F15/20 , G01D5/00
CPC分类号： H02H5/00
摘要： A microprocessor having a monolithically integrated environmental sensor is provided. The microprocessor is shielded from an environmental signal by isolation which is specific to the type of sensor used, thereby allowing the sensor to be exposed to the environmental signal. Optionally, high current drive circuitry is integrated with the microprocessor-sensor circuit to provide a monolithic device which allows control of power loads based in part on output from an environmental sensing device.
摘要翻译：提供具有单片集成环境传感器的微处理器。微处理器通过隔离来屏蔽环境信号，这是特定于使用的传感器类型，从而允许传感器暴露于环境信号。可选地，高电流驱动电路与微处理器传感器电路集成以提供单片设备，其允许部分地基于来自环境感测设备的输出来控制功率负载。

2. 发明授权

US5487305A Three axes accelerometer 失效
标题翻译：三轴加速度计
公开(公告)号：US5487305A
公开(公告)日：1996-01-30
申请号：US274128
申请日：1994-07-12
申请人： Ljubisa Ristic , Ronald J. Gutteridge , Wu Koucheng , Michael F. Calaway , William C. Dunn
发明人： Ljubisa Ristic , Ronald J. Gutteridge , Wu Koucheng , Michael F. Calaway , William C. Dunn
IPC分类号： B81B3/00 , G01P15/125 , G01P15/18
CPC分类号： G01P15/18 , G01P15/125 , G01P2015/082
摘要： A three axis accelerometer includes a semiconductor substrate with a plurality of layers of conductive material formed thereon by semiconductor manufacturing techniques, with each layer defining a plane and mounted in parallel spaced relation to each other. A first of the layers is fixedly mounted and a second layer is mounted for limited movement relative to the first layer with the first and second layers forming a first capacitance varying in accordance with acceleration of the accelerometer along a first axis defined by the first and second layers. A plurality of first surfaces and a plurality of electrically isolated plates are formed as a portion of the first and the second layers, respectively, and positioned in parallel juxtaposition, with the plates being moveable relative to the first layer. The first surfaces and the plates defining mutually orthogonal second and third axes with each other and the first axis and forming capacitances which vary in accordance with acceleration in the second and third axes.
摘要翻译：三轴加速度计包括具有通过半导体制造技术在其上形成的多层导电材料的半导体衬底，其中每个层限定一个平面并以彼此平行间隔的关系安装。第一层被固定地安装，并且第二层被安装成相对于第一层有限的移动，其中第一层和第二层形成第一电容，其根据加速度计沿着由第一和第二层限定的第一轴的加速度而变化层。多个第一表面和多个电隔离板分别形成为第一和第二层的一部分，并且平行并置地定位，其中板可相对于第一层移动。所述第一表面和所述板彼此限定相互正交的第二和第三轴线，并且所述第一轴线和形成电容根据第二和第三轴线的加速度而变化。

3. 发明授权

US5260596A Monolithic circuit with integrated bulk structure resonator 失效
标题翻译：具有集成体积结构谐振器的单片电路
公开(公告)号：US5260596A
公开(公告)日：1993-11-09
申请号：US681258
申请日：1991-04-08
申请人： William C. Dunn , H. Ming Liaw , Ljubisa Ristic , Raymond M. Roop
发明人： William C. Dunn , H. Ming Liaw , Ljubisa Ristic , Raymond M. Roop
IPC分类号： H01L27/20 , H03H9/05 , H03H9/17 , H03H9/19 , H03H9/24 , H01L29/66 , H01L29/96
CPC分类号： H03H9/173 , H01L27/20 , H03H9/0542 , H03H9/2426 , H03H9/2457
摘要： A structure is provided to integrate bulk structure resonators into a monolithic integrated circuit chip. The chip also contains the remaining circuit components (17, 21, 24) required for the desired system function. Micromachining techniques are used to fabricate both support and a cavity (11, 27, 28) which allows mechanical vibration without interference. Alternative embodiments incorporate the use of non-piezoelectric mechanical resonators (14), quartz crystal resonators (18) and thin film piezoelectric resonators (22). Each type of resonator is used for the range of frequencies to which it is suited, providing a family of monolithic resonators capable of being used with integrated circuits having operating frequencies from a few hundred hertz to over 500 Mhz.
摘要翻译：提供了将体结构谐振器集成到单片集成电路芯片中的结构。该芯片还包含所需系统功能所需的其余电路元件（17,21,24）。微加工技术用于制造支撑件和腔体（11,27,28），其允许机械振动而不受干扰。替代实施例包括使用非压电机械谐振器（14），石英晶体谐振器（18）和薄膜压电谐振器（22）。每种类型的谐振器用于其适合的频率范围，提供能够与具有几百赫兹至500Mhz以上的工作频率的集成电路一起使用的单片谐振器系列。

4. 发明授权

US5493248A Integrated circuit for sensing an environmental condition and producing a high power circuit 失效
标题翻译：用于感测环境条件并产生高功率电路的集成电路
公开(公告)号：US5493248A
公开(公告)日：1996-02-20
申请号：US933968
申请日：1992-08-24
申请人： William C. Dunn , Ljubisa Ristic , Bertrand F. Cambou , Lewis E. Terry , Raymond M. Roop
发明人： William C. Dunn , Ljubisa Ristic , Bertrand F. Cambou , Lewis E. Terry , Raymond M. Roop
IPC分类号： G01D3/028 , H01L35/00 , H01L25/00 , H03K3/00
CPC分类号： G01D3/028
摘要： An environmental sensor integrated with high current drive device is provided. An environmental sensor is fabricated on a semiconductor substrate using conventional MOS process used for N-well CMOS logic and DMOS power transistors. An N-well is preferably used as a junction etch stop for micromachining of mechanical sensor components. A high voltage P-type region is used to electrically isolate the high current device from the sensor device. By locating the sensor device away from the high current drive device on a common semiconductor substrate, good performance can be achieved from the sensor even while the high current device dissipates a large amount of power.
摘要翻译：提供与大电流驱动装置集成的环境传感器。使用用于N阱CMOS逻辑和DMOS功率晶体管的常规MOS工艺在半导体衬底上制造环境传感器。优选使用N阱作为用于机械传感器部件的微加工的结腐蚀终止。高压P型区域用于将高电流装置与传感器装置电隔离。通过将传感器装置定位在公共半导体衬底上的高电流驱动装置上，即使在高电流装置耗散大量功率的情况下也可以从传感器获得良好的性能。

5. 发明授权

US5146389A Differential capacitor structure and method 失效
标题翻译：差分电容结构及方法
公开(公告)号：US5146389A
公开(公告)日：1992-09-08
申请号：US733920
申请日：1991-07-22
申请人： Ljubisa Ristic , William C. Dunn
发明人： Ljubisa Ristic , William C. Dunn
IPC分类号： G01D5/24 , G01D5/241 , G01P15/00 , H01L21/02 , H01L21/311 , H01L21/822 , H01L27/04 , H01L29/84 , H01L29/92 , H01L45/00
CPC分类号： H01L28/40 , G01D5/2417 , G01P2015/0828
摘要： A differential capacitor structure includes a first static conductive layer and a second static conductive layer not electrically coupled to the first static conductive layer. A dynamic conductive layer is suspended between the first and second static conductive layers.

6. 发明授权

US5179429A Magnetic field sensor with split collector contacts for high sensitivity 失效
标题翻译：磁场传感器具有分离式集电极触点，灵敏度高
公开(公告)号：US5179429A
公开(公告)日：1993-01-12
申请号：US860395
申请日：1992-03-30
申请人： Ljubisa Ristic
发明人： Ljubisa Ristic
IPC分类号： G01R33/06 , H01L27/22 , H01L43/08
CPC分类号： H01L29/82 , G01R33/06 , H01L29/735
摘要： A magnetic field sensor is provided by a lateral bipolar transistor having a base region formed of a first conductivity type, an emitter region formed of a second conductivity type disposed in the base region for emitting charge carriers, and a collector region of the second conductivity type disposed in the base region for receiving charge carriers from the emitter region. A first and second metallic contact are connected to the collector region for splitting the collector current into first and second collector contact currents. In the presence of a magnetic field, a number of the charge carriers are deflected toward the first or the second metallic contact, depending on the orientation of the magnetic field, causing an imbalance in the first and second collector contact currents. The noise at the metallic contacts is the same as the noise of a single collector transistor which effectively correlates the noise with itself and cancels any distortion associated with the noise.

7. 发明授权

US5632854A Pressure sensor method of fabrication 失效
标题翻译：压力传感器制造方法
公开(公告)号：US5632854A
公开(公告)日：1997-05-27
申请号：US517047
申请日：1995-08-21
申请人： Andy Mirza , Ljubisa Ristic
发明人： Andy Mirza , Ljubisa Ristic
IPC分类号： G01L9/00 , H01L21/00
CPC分类号： G01L9/0042 , Y10S438/978
摘要： A pressure sensor (11) and its method of fabrication include etching a V-groove (19) in a first surface (16) of a first substrate (12), bonding a second substrate (24) to the first substrate (12), thinning the second substrate (24) to form a diaphragm (32) overlying the V-groove (19), and etching a port (38) from the second surface (18) of the first substrate (12) to the V-groove (19). Tetra-methyl-ammonium-hydroxide is preferably used to anisotropically etch the V-groove (19), and an anisotropic plasma reactive ion etch is preferably used to etch the port (38).
摘要翻译：压力传感器（11）及其制造方法包括蚀刻第一基板（12）的第一表面（16）中的V形槽（19），将第二基板（24）接合到第一基板（12），使所述第二基板（24）变薄以形成覆盖所述V形槽（19）的隔膜（32），并且从所述第一基板（12）的所述第二表面（18）蚀刻到所述V形槽（ 19）。四甲基氢氧化铵优选用于各向异性蚀刻V形槽（19），优选使用各向异性等离子体反应离子蚀刻来蚀刻端口（38）。

8. 发明授权

US5323050A Collector arrangement for magnetotransistor 失效
标题翻译：磁电晶体管的集电极配置
公开(公告)号：US5323050A
公开(公告)日：1994-06-21
申请号：US69802
申请日：1993-06-01
申请人： Ljubisa Ristic
发明人： Ljubisa Ristic
IPC分类号： H01L21/822 , G01R33/06 , H01L21/331 , H01L27/04 , H01L29/06 , H01L29/73 , H01L29/732 , H01L29/82 , H01L43/02 , H01L27/22
CPC分类号： H01L29/82 , G01R33/0088 , G01R33/06 , G01R33/066
摘要： A collector arrangement for a magnetotransistor (10, 25, 30) and a method for making the magnetotransistor (10, 25, 30). A portion of a semiconductor substrate (11) is doped to form a base region (13). The base region is doped to form an emitter region (16, 26, 36) and a collector region (17, 27, 37) such that the collector region (17, 27, 37) surrounds and is spaced apart from the emitter region (16, 26, 36). Collector contacts (C.sub.1 -C.sub.8 and C.sub.5 '-C.sub.8 ', C.sub.13 -C.sub.16) are symmetrically formed in the collector region (17, 27, 37). In a three-dimensional magnetotransistor (10, 25) the collector contacts include split-collector contacts (C.sub.5 -C.sub.8 and C.sub.5 '-C.sub.8 ').
摘要翻译：一种用于磁电晶体管（10,25,30）的集电器装置和用于制造磁电晶体管（10,25,30）的方法。半导体衬底（11）的一部分被掺杂以形成基极区域（13）。掺杂基极区域以形成发射极区域（16,26,36）和集电极区域（17,27,37），使得集电极区域（17,27,37）包围并与发射极区域间隔开 16,26,36）。在集电极区域（17,27,37）中对称地形成集电极触点（C1-C8和C5'-C8'，C13-C16）。在三维磁电晶体管（10,25）中，集电极触点包括分集集电极触点（C5-C8和C5'-C8'）。

9. 发明授权

US5241864A Double pinned sensor utilizing a tensile film 失效
标题翻译：使用拉伸膜的双固定传感器
公开(公告)号：US5241864A
公开(公告)日：1993-09-07
申请号：US899972
申请日：1992-06-17
申请人： David L. Addie , Ronald J. Gutteridge , Ljubisa Ristic
发明人： David L. Addie , Ronald J. Gutteridge , Ljubisa Ristic
IPC分类号： B81B3/00 , G01L1/14 , G01L9/00 , G01L9/12 , G01P15/08 , G01P15/125 , H01L29/84
CPC分类号： B81B3/0072 , G01L1/148 , G01P15/0802 , G01P15/125 , B81C2201/0167
摘要： A double pinned micromachined sensor (11) which utilizes a laminated film (27) having overall tensile strength formed on top of a silicon substrate (16). The laminated film (27) comprises a layer of silicon nitride (18) encapsulated by two layers of polysilicon (19, 21), the silicon nitride (18) providing overall tension for the laminated film. The laminated film (27) is supported above the silicon substrate by support posts (17) and is selectively etched to form a sensor (11, 13).

10. 发明授权

US5181156A Micromachined capacitor structure and method for making 失效
标题翻译：微加工电容器结构及制造方法
公开(公告)号：US5181156A
公开(公告)日：1993-01-19
申请号：US883324
申请日：1992-05-14
申请人： Ronald J. Gutteridge , Ljubisa Ristic
发明人： Ronald J. Gutteridge , Ljubisa Ristic
IPC分类号： G01P15/125 , H01G5/18
CPC分类号： B82Y15/00 , G01P15/125 , H01G5/18 , G01P2015/0828
摘要： A micromachined capacitor structure having integral travel stops (19, 22, 22') within an active region of the capacitor is provided. The capacitor structure is formed on a substrate (11) and includes a moving capacitor plate (15) supported by one or more flexing arms (17) mechanically anchored to the substrate (11). The moving capacitor plate (15) has an active region (15) substantially parallel to the substrate (11) and separated from the substrate (11) by a first spacing. A corrugation (19) is formed in the moving capacitor plate (15) over the substrate (11) and separated from the substrate (11) by a second spacing, wherein the second spacing is smaller than the first spacing.
摘要翻译：提供了一种在电容器的有效区域内具有整体行程停止（19,22,22'）的微加工电容器结构。电容器结构形成在基板（11）上并且包括由机械地锚定到基板（11）的一个或多个挠曲臂（17）支撑的移动电容器板（15）。移动电容器板（15）具有基本上平行于衬底（11）并且与衬底（11）分离第一间隔的有源区（15）。在移动电容器板（15）上形成有在基板（11）上的波纹（19），并且与基板（11）分离第二间隔，其中第二间隔小于第一间隔。

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