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1. 发明授权

US09111727B2 Plasma tuning rods in microwave resonator plasma sources 有权
标题翻译：微波谐振器等离子体源中的等离子体调谐棒
公开(公告)号：US09111727B2
公开(公告)日：2015-08-18
申请号：US13249560
申请日：2011-09-30
申请人： Jianping Zhao , Lee Chen , Merritt Funk , Toshihiko Iwao , Peter L.G. Ventzek
发明人： Jianping Zhao , Lee Chen , Merritt Funk , Toshihiko Iwao , Peter L.G. Ventzek
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32256 , H01J37/32247 , H01J37/32935 , H01L22/00
摘要： The invention provides a plurality of resonator subsystems. The resonator subsystems can comprise one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator subsystem can be coupled to a process chamber using one or more interface subsystems and can comprise one or more resonant cavities, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. Some of the plasma tuning rods can be configured to couple the EM-energy from one or more of the resonant cavities to the process space within the process chamber.
摘要翻译：本发明提供了多个谐振器子系统。谐振器子系统可以包括一个或多个谐振腔，其被配置为通过在与等离子体相邻的谐振腔中产生谐振微波能量将所期望的EM波模式中的电磁（EM）能量耦合到等离子体。谐振器子系统可以使用一个或多个接口子系统耦合到处理室，并且可以包括一个或多个谐振腔，并且每个谐振腔可以具有耦合到其上的多个等离子体调谐棒。一些等离子体调谐杆可被配置成将EM能量从一个或多个谐振腔耦合到处理室内的处理空间。

2. 发明授权

US08721833B2 Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof 有权
标题翻译：包含铁电材料的可变电容室部件及其制造和使用方法
公开(公告)号：US08721833B2
公开(公告)日：2014-05-13
申请号：US13366341
申请日：2012-02-05
申请人： Zhiying Chen , Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
发明人： Zhiying Chen , Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
IPC分类号： H01L21/306
CPC分类号： H01J37/32495 , H01J37/32504
摘要： A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated of a ferroelectric material.
摘要翻译：描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。可替换室元件包括腔室部件，其被构造成在等离子体处理系统中暴露于等离子体，其中室部件由铁电材料制成。

3. 发明授权

US08501499B2 Adaptive recipe selector 有权
标题翻译：自适应配方选择器
公开(公告)号：US08501499B2
公开(公告)日：2013-08-06
申请号：US13073237
申请日：2011-03-28
申请人： Radha Sundararajan , Merritt Funk , Lee Chen , Barton Lane
发明人： Radha Sundararajan , Merritt Funk , Lee Chen , Barton Lane
IPC分类号： H01L21/00 , H01L21/461 , H01L21/302
CPC分类号： H01L22/20 , H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/32139 , H01L21/6708 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of processing a wafer using Ion Energy (IE)-related multilayer process sequences and Ion Energy Controlled Multi-Input/Multi-Output (IEC-MIMO) models and libraries that can include one or more measurement procedures, one or more IEC-etch sequences, and one or more Ion Energy Optimized (IEO) etch procedures. The IEC-MIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple IEC etch sequences. The multiple layers and/or the multiple IEC etch sequence can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using IEO etch procedures.
摘要翻译：本发明提供了一种使用离子能量（IE）相关的多层过程序列和离子能量控制多输入/多输出（IEC-MIMO）模型和可包括一个或多个测量过程的库来处理晶片的方法，其中一个或多个更多的IEC蚀刻序列和一个或多个离子能量优化（IEO）蚀刻程序。 IEC-MIMO过程控制使用多层和/或多个IEC蚀刻序列之间的动态交互行为建模。多层和/或多个IEC蚀刻序列可以与可以使用IEO蚀刻工艺创建的线，沟槽，通孔，间隔物，触点和栅极结构的产生相关联。

4. 发明授权

US07718030B2 Method and system for controlling radical distribution 有权
标题翻译：控制激进分布的方法和系统
公开(公告)号：US07718030B2
公开(公告)日：2010-05-18
申请号：US11233025
申请日：2005-09-23
申请人： Merritt Funk , David V. Horak , Eric J. Strang , Lee Chen
发明人： Merritt Funk , David V. Horak , Eric J. Strang , Lee Chen
IPC分类号： H01L21/3065 , C23C16/00 , C23C16/455 , C23C16/50
CPC分类号： C23C16/4412 , C23C16/45565 , H01J37/3244 , H01J37/32449 , H01J37/32834
摘要： A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.
摘要翻译：等离子体处理系统包括处理室，被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

5. 发明授权

US07674636B2 Dynamic temperature backside gas control for improved within-substrate process uniformity 有权
标题翻译：动态温度背面气体控制，可提高基板内工艺的均匀性
公开(公告)号：US07674636B2
公开(公告)日：2010-03-09
申请号：US11684818
申请日：2007-03-12
申请人： Radha Sundararajan , Lee Chen , Merritt Funk
发明人： Radha Sundararajan , Lee Chen , Merritt Funk
IPC分类号： H01L21/66
CPC分类号： H01L22/20
摘要： A method and apparatus are provided to control the radial or non-radial temperature distribution across a substrate during processing to compensate for non-uniform effects, including radial and angular non-uniformities arising from system variations, or process variations, or both. The temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck to vary heat conduction across the wafer. Backside gas flow, of helium, for example, is dynamically varied across the chuck to control the uniformity of processing of the wafer. Ports in the support are grouped, and gas to or from the groups is separately controlled by different valves responsive to a controller that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities.
摘要翻译：提供了一种方法和装置，以在处理期间控制衬底上的径向或非径向温度分布，以补偿不均匀的影响，包括由系统变化产生的径向和角度不均匀性或过程变化，或两者。优选动态地控制温度，通过在晶片支撑卡盘上的不同区域上不同地流动背面气体来改变晶片上的热传导。例如，氦的背侧气体流动在卡盘之间动态变化以控制晶片的处理的均匀性。支撑中的端口被分组，并且来自组的气体由响应于控制器的不同阀单独控制，所述控制器在空间上控制每个区域中的气体压力，并且优选地动态地控制晶片温度以补偿系统和过程的不均匀性。

6. 发明申请

US20080282979A1 METHOD AND SYSTEM FOR INTRODUCING PROCESS FLUID THROUGH A CHAMBER COMPONENT 有权
标题翻译：通过室内组件介绍工艺流体的方法和系统
公开(公告)号：US20080282979A1
公开(公告)日：2008-11-20
申请号：US11750539
申请日：2007-05-18
申请人： Lee Chen , Merritt Funk
发明人： Lee Chen , Merritt Funk
IPC分类号： C23C16/00
CPC分类号： H01L21/67069 , H01J37/32192 , H01J37/3244
摘要： A method and system for introducing a process fluid through a chamber component in a processing system is described. The chamber component comprises a chamber element having a first surface on a supply side of the chamber element and a second surface on a process side of the chamber element, wherein the process side is opposite the supply side. Furthermore, the chamber component comprises a conduit extending through the chamber element from the supply side to the process side, wherein the conduit comprises an inlet configured to receive a process fluid and an outlet configured to distribute the process fluid.
摘要翻译：描述了一种通过处理系统中的腔室部件引入过程流体的方法和系统。腔室部件包括腔室元件，腔室元件具有在腔室元件的供给侧上的第一表面和腔室元件的过程侧上的第二表面，其中处理侧与供给侧相对。此外，腔室部件包括从供应侧延伸穿过腔室元件到管道侧的管道，其中管道包括被配置为接收过程流体的入口和被配置为分配过程流体的出口。

7. 发明申请

US20080223873A1 DYNAMIC CONTROL OF PROCESS CHEMISTRY FOR IMPROVED WITHIN-SUBSTRATE PROCESS UNIFORMITY 有权
标题翻译：改进基板工艺均匀性的工艺化学动态控制
公开(公告)号：US20080223873A1
公开(公告)日：2008-09-18
申请号：US11684853
申请日：2007-03-12
申请人： Lee Chen , Radha Sundararajan , Merritt Funk
发明人： Lee Chen , Radha Sundararajan , Merritt Funk
IPC分类号： C23F1/02
CPC分类号： H01J37/32642 , H01J37/3244 , H01J37/32449 , Y10T137/0324 , Y10T428/215
摘要： A method and system for dynamically controlling a process chemistry above a substrate is described. The system for adjusting the process chemistry comprises a ring configured to surround a peripheral edge of a substrate in a vacuum processing system. The ring comprises one or more gas distribution passages formed within the ring and configured to supply an additive process gas through an upper surface of the ring to the peripheral region of the substrate, wherein the one or more gas distribution passages are configured to be coupled to one or more corresponding gas supply passages formed within the substrate holder upon which the ring rests.
摘要翻译：描述了用于动态地控制衬底上方的工艺化学物质的方法和系统。用于调整工艺化学的系统包括配置成在真空处理系统中围绕衬底的周边边缘的环。所述环包括一个或多个气体分配通道，所述气体分配通道形成在所述环内并且构造成通过所述环的上表面将添加的处理气体供应到所述基底的周边区域，其中所述一个或多个气体分配通道被配置为与一个或多个对应的气体供给通道，其形成在所述基座保持器内，所述环支撑在所述基座支架上。

8. 发明授权

US08847159B2 Ion energy analyzer 有权
标题翻译：离子能量分析仪
公开(公告)号：US08847159B2
公开(公告)日：2014-09-30
申请号：US13433071
申请日：2012-03-28
申请人： Lee Chen , Barton Lane , Merritt Funk , Jianping Zhao , Radha Sundararajan
发明人： Lee Chen , Barton Lane , Merritt Funk , Jianping Zhao , Radha Sundararajan
IPC分类号： G01T1/185 , H01J49/48 , H01J37/32 , H05H1/00
CPC分类号： H01J37/32935 , H01J49/488 , H05H1/0081 , Y10T29/49002
摘要： An ion energy analyzer for determining an ion energy distribution of a plasma and comprising an entrance grid, a selection grid, and an ion collector. The entrance grid includes a first plurality of openings dimensioned to be less than a Debye length for the plasma. The ion collector is coupled to the entrance grid via a first voltage source. The selection grid is positioned between the entrance grid and the ion collector and is coupled to the entrance grid via a second voltage source. An ion current meter is coupled to the ion collector to measure an ion flux onto the ion collector and transmit a signal related thereto.
摘要翻译：一种用于确定等离子体的离子能量分布并包括入口格栅，选择栅格和离子收集器的离子能量分析器。入口格栅包括尺寸小于等离子体的德拜长度的第一多个开口。离子收集器通过第一电压源耦合到入口电网。选择网格位于入口格栅和离子收集器之间，并通过第二电压源耦合到入口格栅。离子电流计耦合到离子收集器以测量离子收集器上的离子通量并传输与其相关的信号。

9. 发明申请

US20130115110A1 PROCESSING CHAMBER INTEGRATED PRESSURE CONTROL 有权
标题翻译：加工室综合压力控制
公开(公告)号：US20130115110A1
公开(公告)日：2013-05-09
申请号：US13606689
申请日：2012-09-07
申请人： Merritt Funk , Lee Chen
发明人： Merritt Funk , Lee Chen
IPC分类号： F04B49/06 , H01L21/203 , H01L21/306
CPC分类号： F04B49/06 , C23C16/4412 , F04D19/042 , F04D27/0246 , H01L21/67017 , H01L21/67253
摘要： An apparatus and method for controlling pumping characteristics within a semiconductor processing chamber are provided. The apparatus includes levitation of a hollow shaft turbo pump or pump elements, and is configured to control pumping by including adjustments for orientation, position, geometries, and other aspects of the turbo pump. The method includes adjusting design and operational parameters, to control pumping characteristics within the processing chamber.
摘要翻译：提供一种用于控制半导体处理室内的泵浦特性的装置和方法。该装置包括悬挂空心轴涡轮泵或泵元件，并且构造成通过包括对涡轮泵的取向，位置，几何形状和其它方面的调整来控制泵送。该方法包括调整设计和操作参数，以控制处理室内的泵送特性。

10. 发明申请

US20120248311A1 ION ENERGY ANALYZER AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：离子能分析仪及其制造方法
公开(公告)号：US20120248311A1
公开(公告)日：2012-10-04
申请号：US13433088
申请日：2012-03-28
申请人： Merritt Funk , Lee Chen , Barton Lane , Jianping Zhao , Radha Sundararajan
发明人： Merritt Funk , Lee Chen , Barton Lane , Jianping Zhao , Radha Sundararajan
IPC分类号： G01T1/16 , B23K31/02 , H01S4/00
CPC分类号： H01J37/32935 , H01J49/488 , H05H1/0081 , Y10T29/49002
摘要： A process by which an ion energy analyzer is manufactured includes processing a first substrate to form an entrance grid having a first channel and a first plurality of openings extending therethrough. A second substrate is processed to form a selection grid having a second channel therein and a second plurality of openings extending therethrough. A third substrate is processed to form an ion collector having a third channel therein. The entrance grid is operably coupled to, and electrically isolated from, the selection grid, which is, in turn, operably coupled to, and electrically isolated from, the ion collector.
摘要翻译：制造离子能量分析器的过程包括处理第一基底以形成具有第一通道和延伸穿过其中的第一多个开口的入口格栅。处理第二衬底以形成其中具有第二通道的选择栅格和延伸穿过其中的第二多个开口。处理第三衬底以形成其中具有第三通道的离子收集器。入口栅格可操作地耦合到选择栅格并与之电隔离，所述选择栅格又可操作地耦合到离子收集器并与电离隔离。

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