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1. 发明授权

US07910492B2 Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them 有权
标题翻译：具有PN结的纳米晶须，掺杂的纳米晶须及其制备方法
公开(公告)号：US07910492B2
公开(公告)日：2011-03-22
申请号：US12230086
申请日：2008-08-22
申请人： Lars Ivar Samuelson , Bjorn Jonas Ohlsson , Lars-Ake Ledebo
发明人： Lars Ivar Samuelson , Bjorn Jonas Ohlsson , Lars-Ake Ledebo
IPC分类号： H01L21/20
CPC分类号： H01L29/0665 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B29/62 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02631 , H01L21/02653 , H01L21/2258 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/861 , H01L29/885 , Y10S977/932
摘要： Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode. In another embodiment, a nanowhisker is surrounded by polymer material containing dopant material. A step of rapid thermal annealing causes the dopant material to diffuse into the nanowhisker. In a further embodiment, a nanowhisker has a heterojunction between two different intrinsic materials, and Fermi level pinning creates a pn junction at the interface without doping.
摘要翻译：公开了纳米工程结构，其结合具有高迁移率导电性的纳米晶须并结合pn结。在一个实施方案中，第一半导体材料的纳米晶须具有第一带隙，并且包含至少一个具有第二带隙的第二材料的外壳沿其长度的至少部分包围所述纳米元件，所述第二材料被掺杂以提供相反的导电型电荷载体在沿着纳米晶须的长度的相应的第一和第二区域中，由此通过将电荷载流子转移到纳米晶须中而在纳米晶须中产生相应导电型电荷载体的对应的第一和第二区域，它们之间的自由载体。外壳材料的掺杂可以是退化的，以便在纳米晶须相邻的段内产生类似于Esaki二极管的重掺杂区域的相反导电类型的非常重的调制掺杂。在另一个实施方案中，纳米晶须被含有掺杂剂材料的聚合物材料包围。快速热退火的步骤使掺杂剂材料扩散到纳米晶须中。在另一个实施方案中，纳米晶须在两种不同的本征材料之间具有异质结，并且费米能级钉扎在界面处产生不掺杂的pn结。

2. 发明授权

US08242481B2 Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them 有权
标题翻译：具有PN结的纳米晶须，掺杂的纳米晶须及其制备方法
公开(公告)号：US08242481B2
公开(公告)日：2012-08-14
申请号：US13352533
申请日：2012-01-18
申请人： Lars Ivar Samuelson , Bjorn Jonas Ohlsson , Lars-Ake Ledebo
发明人： Lars Ivar Samuelson , Bjorn Jonas Ohlsson , Lars-Ake Ledebo
IPC分类号： H01L29/06
CPC分类号： H01L29/0665 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B29/62 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02631 , H01L21/02653 , H01L21/2258 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/861 , H01L29/885 , Y10S977/932
摘要： Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween.
摘要翻译：公开了纳米工程结构，其结合具有高迁移率导电性的纳米晶须并结合pn结。在一个实施方案中，第一半导体材料的纳米晶须具有第一带隙，并且包含至少一个具有第二带隙的第二材料的外壳沿其长度的至少部分包围所述纳米元件，所述第二材料被掺杂以提供相反的导电型电荷载体在沿着纳米晶须的长度的相应的第一和第二区域中，由此通过将电荷载流子转移到纳米晶须中而在纳米晶须中产生相应导电型电荷载体的对应的第一和第二区域，它们之间的自由载体。

3. 发明申请

US20090014711A1 Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them 有权
标题翻译：具有PN结的纳米晶须，掺杂的纳米晶须及其制备方法
公开(公告)号：US20090014711A1
公开(公告)日：2009-01-15
申请号：US12230086
申请日：2008-08-22
申请人： Lars Ivar Samuelson , Bjorn Jonas Ohlsson , Lars-Ake Ledebo
发明人： Lars Ivar Samuelson , Bjorn Jonas Ohlsson , Lars-Ake Ledebo
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L29/0665 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B29/62 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02631 , H01L21/02653 , H01L21/2258 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/861 , H01L29/885 , Y10S977/932
摘要： Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode. In another embodiment, a nanowhisker is surrounded by polymer material containing dopant material. A step of rapid thermal annealing causes the dopant material to diffuse into the nanowhisker. In a further embodiment, a nanowhisker has a heterojunction between two different intrinsic materials, and Fermi level pinning creates a pn junction at the interface without doping.
摘要翻译：公开了纳米工程结构，其结合具有高迁移率导电性的纳米晶须并结合pn结。在一个实施方案中，第一半导体材料的纳米晶须具有第一带隙，并且包含至少一个具有第二带隙的第二材料的外壳沿其长度的至少部分包围所述纳米元件，所述第二材料被掺杂以提供相反的导电型电荷载体在沿着纳米晶须的长度的相应的第一和第二区域中，由此通过将电荷载流子转移到纳米晶须中而在纳米晶须中产生相应导电型电荷载体的对应的第一和第二区域，它们之间的自由载体。外壳材料的掺杂可以是退化的，以便在纳米晶须相邻的段内产生类似于Esaki二极管的重掺杂区域的相反导电类型的非常重的调制掺杂。在另一个实施方案中，纳米晶须被含有掺杂剂材料的聚合物材料包围。快速热退火的步骤使掺杂剂材料扩散到纳米晶须中。在另一个实施方案中，纳米晶须在两种不同的本征材料之间具有异质结，并且费米能级钉扎在界面处产生不掺杂的pn结。

4. 发明申请

US20120126200A1 Nanowhiskers with PN Junctions, Doped Nanowhiskers, and Methods for Preparing Them 有权
标题翻译：具有PN结的纳米晶须，掺杂纳米晶须及其制备方法
公开(公告)号：US20120126200A1
公开(公告)日：2012-05-24
申请号：US13352533
申请日：2012-01-18
申请人： Lars Ivar Samuelson , Bjorn Jonas Ohlsson , Lars-Ake Ledebo
发明人： Lars Ivar Samuelson , Bjorn Jonas Ohlsson , Lars-Ake Ledebo
IPC分类号： H01L29/06 , B82Y99/00
CPC分类号： H01L29/0665 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B29/62 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02631 , H01L21/02653 , H01L21/2258 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/861 , H01L29/885 , Y10S977/932
摘要： Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween.
摘要翻译：公开了纳米工程结构，其结合具有高迁移率导电性的纳米晶须并结合pn结。在一个实施方案中，第一半导体材料的纳米晶须具有第一带隙，并且包含至少一个具有第二带隙的第二材料的外壳沿其长度的至少部分包围所述纳米元件，所述第二材料被掺杂以提供相反的导电型电荷载体在沿着纳米晶须的长度的相应的第一和第二区域中，由此通过将电荷载流子转移到纳米晶须中而在纳米晶须中产生相应导电型电荷载体的对应的第一和第二区域，它们之间的自由载体。

5. 发明授权

US08120009B2 Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them 有权
标题翻译：具有PN结的纳米晶须，掺杂的纳米晶须及其制备方法
公开(公告)号：US08120009B2
公开(公告)日：2012-02-21
申请号：US13033111
申请日：2011-02-23
申请人： Lars Ivar Samuelson , Bjorn Jonas Ohlsson , Lars-Ake Ledebo
发明人： Lars Ivar Samuelson , Bjorn Jonas Ohlsson , Lars-Ake Ledebo
IPC分类号： H01L33/00
CPC分类号： H01L29/0665 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B29/62 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02631 , H01L21/02653 , H01L21/2258 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/861 , H01L29/885 , Y10S977/932
摘要： Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode. In another embodiment, a nanowhisker is surrounded by polymer material containing dopant material. A step of rapid thermal annealing causes the dopant material to diffuse into the nanowhisker. In a further embodiment, a nanowhisker has a heterojunction between two different intrinsic materials, and Fermi level pinning creates a pn junction at the interface without doping.
摘要翻译：公开了纳米工程结构，其结合具有高迁移率导电性的纳米晶须并结合pn结。在一个实施方案中，第一半导体材料的纳米晶须具有第一带隙，并且包含至少一个具有第二带隙的第二材料的外壳沿其长度的至少部分包围所述纳米元件，所述第二材料被掺杂以提供相反的导电型电荷载体在沿着纳米晶须的长度的相应的第一和第二区域中，由此通过将电荷载流子转移到纳米晶须中而在纳米晶须中产生相应导电型电荷载体的对应的第一和第二区域，它们之间的自由载体。外壳材料的掺杂可以是退化的，以便在纳米晶须相邻的段内产生类似于Esaki二极管的重掺杂区域的相反导电类型的非常重的调制掺杂。在另一个实施方案中，纳米晶须被含有掺杂剂材料的聚合物材料包围。快速热退火的步骤使掺杂剂材料扩散到纳米晶须中。在另一个实施方案中，纳米晶须在两种不同的本征材料之间具有异质结，并且费米能级钉扎在界面处产生不掺杂的pn结。

6. 发明申请

US20050006673A1 Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them 有权
标题翻译：具有PN结的纳米晶须，掺杂的纳米晶须及其制备方法
公开(公告)号：US20050006673A1
公开(公告)日：2005-01-13
申请号：US10814630
申请日：2004-04-01
申请人： Lars Samuelson , Bjorn Ohlsson , Lars-Ake Ledebo
发明人： Lars Samuelson , Bjorn Ohlsson , Lars-Ake Ledebo
IPC分类号： C30B11/00 , C30B11/12 , H01L21/205 , H01L21/225 , H01L29/06 , H01L29/861 , H01L29/885 , H01L31/109
CPC分类号： H01L29/0665 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B29/62 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02631 , H01L21/02653 , H01L21/2258 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/861 , H01L29/885 , Y10S977/932
摘要： Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode. In another embodiment, a nanowhisker is surrounded by polymer material containing dopant material. A step of rapid thermal annealing causes the dopant material to diffuse into the nanowhisker. In a further embodiment, a nanowhisker has a heterojunction between two different intrinsic materials, and Fermi level pinning creates a pn junction at the interface without doping.
摘要翻译：公开了纳米工程结构，其结合具有高迁移率导电性的纳米晶须并结合pn结。在一个实施方案中，第一半导体材料的纳米晶须具有第一带隙，并且包含至少一个具有第二带隙的第二材料的外壳沿其长度的至少部分包围所述纳米元件，所述第二材料被掺杂以提供相反的导电型电荷载体在沿着纳米晶须的长度的相应的第一和第二区域中，由此通过将电荷载流子转移到纳米晶须中而在纳米晶须中产生相应导电型电荷载体的对应的第一和第二区域，它们之间的自由载体。外壳材料的掺杂可以是退化的，以便在纳米晶须相邻的段内产生类似于Esaki二极管的重掺杂区域的相反导电类型的非常重的调制掺杂。在另一个实施方案中，纳米晶须被含有掺杂剂材料的聚合物材料包围。快速热退火的步骤使掺杂剂材料扩散到纳米晶须中。在另一个实施方案中，纳米晶须在两种不同的本征材料之间具有异质结，并且费米能级钉扎在界面处产生不掺杂的pn结。

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