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    • 1. 发明申请
    • LIGHT-EMITTING DIODE AND DEPOSITION APPARATUS FOR FABRICATING THE SAME
    • 发光二极管和沉积装置用于制造它们
    • US20130105843A1
    • 2013-05-02
    • US13661265
    • 2012-10-26
    • LG Display CO., LTD.
    • Se-Hee LEESun-Kap KWON
    • H01L33/60
    • C23C14/24C23C14/50C23C14/542H01L51/5012H01L51/5036H01L51/5218H01L51/5265H01L51/56
    • There is provided a light-emitting diode including: a first electrode including a reflective metal layer and a transparent conductive material layer formed on the reflective metal layer; an emitting material layer formed on the first electrode and including a light-emitting layer formed with a host and first and second dopants; and a second electrode formed on the emitting material layer and being a semi-transparent electrode, wherein a first wavelength corresponding to a peak value of a photo luminescence (PL) spectrum of the first dopant is shorter than a second wavelength corresponding to a peak value of an electro luminescence (EL) spectrum of the first dopant, and a third wavelength corresponding to a peak value of a PL spectrum of the second dopant is longer than a fourth wavelength corresponding to a peak value of an EL spectrum of the second dopant.
    • 提供了一种发光二极管,包括:第一电极,其包括形成在反射金属层上的反射金属层和透明导电材料层; 形成在第一电极上并且包括形成有主体和第一和第二掺杂剂的发光层的发光材料层; 以及形成在所述发光材料层上并且是半透明电极的第二电极,其中对应于所述第一掺杂剂的光致发光(PL)光谱的峰值的第一波长短于对应于峰值的第二波长 的第一掺杂剂的电致发光(EL)光谱和对应于第二掺杂剂的PL光谱的峰值的第三波长比对应于第二掺杂剂的EL光谱的峰值的第四波长长。