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1. 发明申请

US20050056867A1 Surface photovoltage-based sensing of molecules 审中-公开
标题翻译：表面基于光电压的分子感测
公开(公告)号：US20050056867A1
公开(公告)日：2005-03-17
申请号：US10665189
申请日：2003-09-16
申请人： Krzysztof Nauka , Zhiyong Li , Theodore Kamins
发明人： Krzysztof Nauka , Zhiyong Li , Theodore Kamins
IPC分类号： G01N27/00 , G01N27/12 , H01G9/20 , H01L29/768
CPC分类号： H01G9/2031 , G01N27/002 , Y02E10/542 , Y02P70/521
摘要： Surface photovoltage is used for molecule sensing. The sensing is performed by exposing a surface of a semiconductor to molecules, and sensing a change in surface photovoltage of the semiconductor. Chemical and biological sensors may be based on such sensing.
摘要翻译：表面光电压用于分子感测。通过将半导体的表面暴露于分子并感测半导体的表面光电压的变化来进行感测。化学和生物传感器可以基于这种感测。

2. 发明申请

US20070252982A1 Raman signal-enhancing structures and devices 有权
标题翻译：拉曼信号增强结构和器件
公开(公告)号：US20070252982A1
公开(公告)日：2007-11-01
申请号：US11413910
申请日：2006-04-28
申请人： Shih-Yuan Wang , R. Williams , Raymond Beausoleil , Theodore Kamins , Zhiyong Li , Wei Wu
发明人： Shih-Yuan Wang , R. Williams , Raymond Beausoleil , Theodore Kamins , Zhiyong Li , Wei Wu
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01N21/658 , G01J3/44
摘要： Raman systems include a radiation source, a radiation detector, and a Raman device or signal-enhancing structure. Raman devices include a tunable resonant cavity and a Raman signal-enhancing structure coupled to the cavity. The cavity includes a first reflective member, a second reflective member, and an electro-optic material disposed between the reflective members. The electro-optic material exhibits a refractive index that varies in response to an applied electrical field. Raman signal-enhancing structures include a substantially planar layer of Raman signal-enhancing material having a major surface, a support structure extending from the major surface, and a substantially planar member comprising a Raman signal-enhancing material disposed on an end of the support structure opposite the layer of Raman signal-enhancing material. The support structure separates at least a portion of the planar member from the layer of Raman signal-enhancing material by a selected distance of less than about fifty nanometers.
摘要翻译：拉曼系统包括辐射源，辐射检测器和拉曼器件或信号增强结构。拉曼器件包括耦合到空腔的可调谐谐振腔和拉曼信号增强结构。空腔包括第一反射构件，第二反射构件和设置在反射构件之间的电光材料。电光材料表现出响应于所施加的电场而变化的折射率。拉曼信号增强结构包括具有主表面的基本平坦的拉曼信号增强材料层，从主表面延伸的支撑结构和包括设置在支撑结构的端部上的拉曼信号增强材料的基本上平面的构件与拉曼信号增强材料层相对。支撑结构将平面构件的至少一部分与拉曼信号增强材料层分开小于约五十纳米的选定距离。

3. 发明申请

US20060146323A1 Nanowires for surface-enhanced raman scattering molecular sensors 有权
标题翻译：纳米线用于表面增强的拉曼散射分子传感器
公开(公告)号：US20060146323A1
公开(公告)日：2006-07-06
申请号：US11030733
申请日：2005-01-06
申请人： Alexandre Bratkovski , M. Islam , Theodore Kamins , Zhiyong Li , Shih-Yuan Wang
发明人： Alexandre Bratkovski , M. Islam , Theodore Kamins , Zhiyong Li , Shih-Yuan Wang
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01N21/658
摘要： A SERS-active structure is disclosed that includes a substrate and at least two nanowires disposed on the substrate. Each of the at least two nanowires has a first end and a second end, the first end being attached to the substrate and the second end having a SERS-active tip. A SERS system is also disclosed that includes a SERS-active structure. Also disclosed are methods for forming a SERS-active structure and methods for performing SERS with SERS-active structures.
摘要翻译：公开了一种SERS-活性结构，其包括衬底和设置在衬底上的至少两个纳米线。所述至少两个纳米线中的每一个具有第一端和第二端，所述第一端附接到所述基底，所述第二端具有SERS活性末端。还公开了包括SERS活性结构的SERS系统。还公开了形成SERS活性结构的方法和用SERS活性结构进行SERS的方法。

4. 发明申请

US20070252132A1 Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles 有权
标题翻译：纳米线器件和系统，发光纳米线和精确定位纳米粒子的方法
公开(公告)号：US20070252132A1
公开(公告)日：2007-11-01
申请号：US11413375
申请日：2006-04-28
申请人： Theodore Kamins , Philip Kuekes , Stanley Williams
发明人： Theodore Kamins , Philip Kuekes , Stanley Williams
IPC分类号： H01L29/06
CPC分类号： H01L33/18 , B82Y20/00 , G02F2001/0152 , G02F2001/0156 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L33/06 , H01L33/08 , H01S3/0903 , H01S5/02236 , H01S5/0424 , H01S5/10 , H01S5/2045 , H01S5/3219 , H01S5/341 , H01S5/3424 , H01S5/34386 , Y10S977/752 , Y10S977/762 , Y10S977/949 , Y10S977/95
摘要： A radiation-emitting device includes a nanowire that is structurally and electrically coupled to a first electrode and a second electrode. The nanowire includes a double-heterostructure semiconductor device configured to emit electromagnetic radiation when a voltage is applied between the electrodes. A device includes a nanowire having an active longitudinal segment selectively disposed at a predetermined location within a resonant cavity that is configured to resonate at least one wavelength of electromagnetic radiation emitted by the segment within a range extending from about 300 nanometers to about 2,000 nanometers. Active nanoparticles are precisely positioned in resonant cavities by growing segments of nanowires at known growth rates for selected amounts of time.
摘要翻译：辐射发射器件包括结构和电耦合到第一电极和第二电极的纳米线。纳米线包括双电极结构半导体器件，其被配置为当在电极之间施加电压时发射电磁辐射。一种器件包括具有主动纵向段的纳米线，该有源纵向段选择性地设置在谐振腔内的预定位置处，该谐振腔被配置为在从约300纳米到约2,000纳米的范围内共振由该区段发射的电磁辐射的至少一个波长。活性纳米颗粒通过在已知生长速率下生长段纳米线以选定的时间量精确地定位在谐振腔中。

5. 发明申请

US20060164634A1 Nano-enhanced Raman spectroscopy-active nanostructures including elongated components and methods of making the same 有权
标题翻译：纳米增强拉曼光谱 - 包括细长组分的活性纳米结构及其制备方法
公开(公告)号：US20060164634A1
公开(公告)日：2006-07-27
申请号：US11044105
申请日：2005-01-27
申请人： Theodore Kamins , R. Stanley Williams
发明人： Theodore Kamins , R. Stanley Williams
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01N21/658
摘要： An NERS-active structure is disclosed that includes a substrate and at least one elongated component disposed on the substrate. The at least one elongated component may include two conducting strips including an NERS-active material and an insulating strip positioned between the two conducting strips. Alternatively, the at least one elongated component may include a homogeneous component. An NERS system is also disclosed that includes an NERS-active structure. Also disclosed are methods for forming an NERS-active structure and methods for performing NERS with NERS-active structures.
摘要翻译：公开了一种包括衬底和设置在衬底上的至少一个细长部件的NERS-活性结构。所述至少一个细长部件可以包括两个导电条，包括NERS-活性材料和位于两个导电条之间的绝缘条。或者，至少一个细长部件可以包括均匀的部件。还公开了包括NERS活性结构的NERS系统。还公开了形成NERS活性结构的方法和用NERS活性结构进行NERS的方法。

6. 发明申请

US20070228583A1 Methods of bridging lateral nanowires and device using same 审中-公开
公开(公告)号：US20070228583A1
公开(公告)日：2007-10-04
申请号：US11710283
申请日：2007-02-23
申请人： M. Islam , Theodore Kamins , Shashank Sharma
发明人： M. Islam , Theodore Kamins , Shashank Sharma
IPC分类号： H01L23/48
CPC分类号： G11C13/025 , B82Y10/00 , B82Y30/00 , G11C2213/16 , G11C2213/17 , H01L21/76838 , H01L23/53271 , H01L2221/1094 , H01L2924/0002 , Y10S977/721 , Y10S977/742 , H01L2924/00
摘要： A semiconductor nanowire is grown laterally. A method of growing the nanowire forms a vertical surface on a substrate, and activates the vertical surface with a nanoparticle catalyst. A method of laterally bridging the nanowire grows the nanowire from the activated vertical surface to connect to an opposite vertical surface on the substrate. A method of connecting electrodes of a semiconductor device grows the nanowire from an activated device electrode to an opposing device electrode. A method of bridging semiconductor nanowires grows nanowires between an electrode pair in opposing lateral directions. A method of self-assembling the nanowire bridges the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity in the vertical surface. An electronic device includes a laterally grown nano-scale interconnection.

7. 发明申请

US20070228459A1 Integrated semiconductor circuits and methods of making integrated semiconductor circuits 有权
标题翻译：集成半导体电路和制造集成半导体电路的方法
公开(公告)号：US20070228459A1
公开(公告)日：2007-10-04
申请号：US11393845
申请日：2006-03-31
申请人： Theodore Kamins
发明人： Theodore Kamins
IPC分类号： H01L29/94
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L31/101 , H01L33/005 , H01L33/02
摘要： An integrated semiconductor circuit includes a substrate having a surface of a first semiconductor material, at least one separating material formed on the surface and defining a through hole, and a guide region formed in the hole. The guide region comprises at least one second semiconductor material. The guide region comprises at least a first region and a second region having a larger cross-section than the first region. The first region contacts the surface of the substrate over a small contact region. Methods of making the integrated semiconductor circuit are also disclosed.
摘要翻译：集成半导体电路包括具有第一半导体材料的表面的基板，形成在表面上并限定通孔的至少一个分离材料和形成在孔中的引导区域。引导区域包括至少一个第二半导体材料。引导区域至少包括具有比第一区域更大的横截面的第一区域和第二区域。第一区域在小的接触区域上接触衬底的表面。还公开了制造集成半导体电路的方法。

8. 发明申请

US20070177139A1 Nanowire heterostructures and methods of forming the same 有权
标题翻译：纳米线异质结构及其形成方法
公开(公告)号：US20070177139A1
公开(公告)日：2007-08-02
申请号：US11341705
申请日：2006-01-27
申请人： Theodore Kamins , Alexandre Bratkovski , Shashank Sharma
发明人： Theodore Kamins , Alexandre Bratkovski , Shashank Sharma
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01N21/658 , B82Y15/00 , B82Y20/00 , G02B6/107
摘要： A NERS-active structure is disclosed that includes at least one heterostructure nanowire. The at least one heterostructure nanowire may include alternating segments of an NERS-inactive material and a NERS-active material in an axial direction. Alternatively, the alternating segments may be of an NERS-inactive material and a material capable of attracting nanoparticles of a NERS-active material. In yet another alternative, the heterostructure nanowire may include a core with alternating coatings of an NERS-inactive material and a NERS-active material in a radial direction. A NERS system is also disclosed that includes a NERS-active structure. Also disclosed are methods for forming a NERS-active structure and methods for performing NERS with NERS-active structures.
摘要翻译：公开了包含至少一个异质结构纳米线的NERS活性结构。所述至少一个异质结构纳米线可以包括在轴向上的NERS非活性材料和NERS-活性材料的交替的段。或者，交替的区段可以是NERS-非活性材料和能够吸引NERS-活性材料的纳米颗粒的材料。在另一个替代方案中，异质结构纳米线可以包括在径向方向上具有NERS非活性材料和NERS-活性材料的交替涂层的芯。还公开了包括NERS-活性结构的NERS系统。还公开了形成NERS-活性结构的方法和用NERS-活性结构进行NERS的方法。

9. 发明申请

US20060138575A1 Semiconductor nanowire fluid sensor and method for fabricating the same 失效
标题翻译：半导体纳米线流体传感器及其制造方法
公开(公告)号：US20060138575A1
公开(公告)日：2006-06-29
申请号：US11022123
申请日：2004-12-23
申请人： Theodore Kamins
发明人： Theodore Kamins
IPC分类号： H01L29/84
CPC分类号： G01N27/127 , B82Y15/00 , Y10S977/70 , Y10S977/72 , Y10S977/731
摘要： Nanowire fluid sensors are provided. The fluid sensors comprise a first electrode, a second electrode, and at least one nanowire between the first electrode and the second electrode. Each nanowire is connected at a first end to the first electrode and at a second end to the second electrode. Methods of fabricating and operating the fluid sensor are also provided.
摘要翻译：提供纳米线流体传感器。流体传感器包括第一电极，第二电极和在第一电极和第二电极之间的至少一个纳米线。每个纳米线在第一端连接到第一电极，在第二端连接到第二电极。还提供了制造和操作流体传感器的方法。

10. 发明申请

US20050133476A1 Methods of bridging lateral nanowires and device using same 失效
标题翻译：桥接横向纳米线的方法及其使用方法
公开(公告)号：US20050133476A1
公开(公告)日：2005-06-23
申请号：US10738176
申请日：2003-12-17
申请人： M. Islam , Theodore Kamins , Shashank Sharma
发明人： M. Islam , Theodore Kamins , Shashank Sharma
IPC分类号： D01F9/127 , H01L21/768 , H01L23/532 , H01L51/30 , C23F1/00
CPC分类号： G11C13/025 , B82Y10/00 , B82Y30/00 , G11C2213/16 , G11C2213/17 , H01L21/76838 , H01L23/53271 , H01L2221/1094 , H01L2924/0002 , Y10S977/721 , Y10S977/742 , H01L2924/00
摘要： A semiconductor nanowire is grown laterally. A method of growing the nanowire forms a vertical surface on a substrate, and activates the vertical surface with a nanoparticle catalyst. A method of laterally bridging the nanowire grows the nanowire from the activated vertical surface to connect to an opposite vertical surface on the substrate. A method of connecting electrodes of a semiconductor device grows the nanowire from an activated device electrode to an opposing device electrode. A method of bridging semiconductor nanowires grows nanowires between an electrode pair in opposing lateral directions. A method of self-assembling the nanowire bridges the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity in the vertical surface. An electronic device includes a laterally grown nano-scale interconnection.
摘要翻译：半导体纳米线横向生长。生长纳米线的方法在衬底上形成垂直表面，并用纳米颗粒催化剂激活垂直表面。横向桥接纳米线的方法从激活的垂直表面生长纳米线，以连接到衬底上的相对的垂直表面。连接半导体器件的电极的方法将纳米线从激活的器件电极生长到相对的器件电极。桥接半导体纳米线的方法在相对的横向方向上的电极对之间生长纳米线。自组装纳米线的方法在激活的电极对之间桥接纳米线。控制纳米线生长的方法在垂直表面形成表面不规则性。电子设备包括横向生长的纳米级互连。

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