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1. 发明授权

US06565507B2 Flexible tube, and method for manufacturing same 失效
公开(公告)号：US06565507B2
公开(公告)日：2003-05-20
申请号：US09950653
申请日：2001-09-13
申请人： Kouichi Kamata , Haruo Akiba , Masanori Kimura , Kouichi Muraki
发明人： Kouichi Kamata , Haruo Akiba , Masanori Kimura , Kouichi Muraki
IPC分类号： A61B100
CPC分类号： B29D23/001 , A61B1/018 , B29C47/0021 , B29C47/0023 , B29C47/0026 , B29C47/0038 , B29C47/0064 , B29C47/021 , B29C47/065 , B29C53/385 , B29C53/50 , B29C53/562 , B29C53/68 , B29C61/006 , B29C2793/009 , B29K2023/06 , B29K2027/12 , B29K2027/18 , B29K2075/00 , B29K2077/00 , B29K2105/0836 , B29K2305/00 , B29K2705/00 , B29K2995/0049 , B29K2995/0067 , B29K2995/0073 , B29L2009/00 , B29L2023/007 , F16L11/085
摘要： A flexible tube having a laminated multi-layer structure including an outer layer composed of a main tube body layer formed of thermoplastic synthetic resin in a predetermined thickness and a reinforcing layer provided on the inner side of the main tube body layer, and an inner layer formed of a thin film sheet of air tight and low friction material. The inner layer is formed by rolling an elongated strip of a thin film sheet into a tubular form such that opposite lateral sides of the thin film sheet are overlapped one on the other to provide a thick wall portion extending longitudinally of and at one angular position of the inner layer.

2. 发明授权

US08154170B2 Acoustic wave device and method for manufacturing the same 有权
标题翻译：声波装置及其制造方法
公开(公告)号：US08154170B2
公开(公告)日：2012-04-10
申请号：US12546188
申请日：2009-08-24
申请人： Masanori Kimura , Shunichi Aikawa , Keji Tsuda , Hikomasa Oshita
发明人： Masanori Kimura , Shunichi Aikawa , Keji Tsuda , Hikomasa Oshita
IPC分类号： H01L41/047 , H03H9/25
CPC分类号： H03H9/1092 , H01L2224/11 , H01L2224/13 , H03H9/059 , Y10T29/42
摘要： An acoustic wave device includes: a piezoelectric substrate on which an acoustic wave element and an electrode pad connected to the acoustic wave element are formed; a first resin part having a first opening located above a function area in which an acoustic wave is excited by the acoustic wave element and a second opening located above the electrode pad; a second resin part that covers the first opening and has a third opening located above the second opening; and a metal layer formed on the electrode pad in the second opening, the first opening and the second opening being inversely tapered.
摘要翻译：声波装置包括：形成声波元件和与声波元件连接的电极焊盘的压电基板; 第一树脂部分，其具有位于声波被声波元件激发的功能区域上方的第一开口和位于电极焊盘上方的第二开口; 第二树脂部分，其覆盖所述第一开口并且具有位于所述第二开口上方的第三开口; 以及形成在所述第二开口中的所述电极焊盘上的金属层，所述第一开口和所述第二开口呈倒锥形。

3. 发明授权

US07739702B2 Optical disk device having an optical pick-up module and tray arranged to carry out improved cooling 失效
标题翻译：具有光学拾取模块和托盘的光盘装置被布置成执行改进的冷却
公开(公告)号：US07739702B2
公开(公告)日：2010-06-15
申请号：US10937400
申请日：2004-09-10
申请人： Yoshinobu Soeda , Kaoru Sato , Munenori Aoyagi , Masanori Kimura , Takehiko Ide
发明人： Yoshinobu Soeda , Kaoru Sato , Munenori Aoyagi , Masanori Kimura , Takehiko Ide
IPC分类号： G11B33/14
CPC分类号： G11B17/056 , G11B33/142
摘要： An optical disk device includes an optical pick-up module including a rotating portion rotating an optical disk; a carriage mounting at least a light source and being provided movably within the optical pick-up module; and a cover having an opening formed thereon, a light being radiated from the light source through the opening toward the outside of the cover; and a tray supporting the optical pick-up module. The tray includes an optical disk attachment region portion opposed to the optical disk and an outside portion provided on an outside of the optical disk attachment region portion. The outside portion has a ledge along its portion adjacent to the circular perimeter of the optical disk. The optical disk, when mounted on the rotating portion, entirely lies between first and second planes, the first plane being defined by the surface of the cover and the second plane being defined by a first of opposing surfaces of the ledge, which first opposing surface is closer to the surface of the cover than is a second of the opposing surfaces of the ledge.
摘要翻译：光盘装置包括：光拾取模块，包括旋转光盘的旋转部分; 至少安装至少一个光源并且可移动地设置在所述光学拾取模块内的托架; 以及具有形成在其上的开口的盖，光从所述光源通过所述开口朝向所述盖的外部辐射; 以及支撑光学拾取模块的托盘。托盘包括与光盘相对的光盘安装区域部分和设置在光盘安装区域部分的外侧的外部部分。外部部分沿其邻近光盘的圆形周边的部分具有凸缘。当安装在旋转部分上时，光盘完全位于第一和第二平面之间，第一平面由盖的表面限定，第二平面由凸缘的相对的第一表面限定，第一相对表面比凸缘的相对表面的第二个更靠近盖的表面。

4. 发明授权

US07161574B2 Liquid crystal display element driving method and liquid crystal display using the same 有权
标题翻译：液晶显示元件驱动方法及使用其的液晶显示器
公开(公告)号：US07161574B2
公开(公告)日：2007-01-09
申请号：US10479152
申请日：2002-05-30
申请人： Masanori Kimura , Ichiro Sato , Katsuhiko Kumagawa
发明人： Masanori Kimura , Ichiro Sato , Katsuhiko Kumagawa
IPC分类号： G09G3/36
CPC分类号： G09G3/3614 , G09G3/3648 , G09G3/3677 , G09G2300/0491 , G09G2310/0205 , G09G2310/0235 , G09G2310/0251 , G09G2310/06 , G09G2310/061 , G09G2320/0252 , G09G2320/0257 , G09G2320/0261
摘要： A liquid crystal display element driving method or a liquid crystal display device uses a liquid crystal display element having a plurality of pixels constituting a screen; divides a frame period into a plurality of write periods and outputs gate signals to select the pixels sequentially during the write periods; forms each of source signals such that the source signal includes a picture signal and a non-picture signal respectively assigned for the write periods; writes each of the source signals corresponding to the selected pixels to each of the pixels with its polarity being alternated; and displays an image responsive to the source signals on the screen of the liquid crystal display element in such a manner that a transmittivity of liquid crystals of each of the pixels is controlled in accordance with the written source signal, wherein the non-picture signal having a polarity identical to that of the picture signal to be written subsequently is written to the pixels.
摘要翻译：液晶显示元件驱动方法或液晶显示装置使用具有构成屏幕的多个像素的液晶显示元件; 将帧周期划分为多个写周期，并且在写周期期间输出门信号以顺序选择像素; 形成每个源信号，使得源信号包括分别分配给写入周期的图像信号和非图像信号; 将与所选择的像素相对应的每个源信号写入每个像素，其极性是交替的; 并且以与液晶显示元件的屏幕上的源信号相对应的方式显示图像，使得根据写入的源信号来控制每个像素的液晶的透射率，其中非图像信号具有将与要写入的图像信号的极性相同的极性被写入像素。

5. 发明授权

US06914644B2 Liquid crystal device 有权
标题翻译：液晶装置
公开(公告)号：US06914644B2
公开(公告)日：2005-07-05
申请号：US09914232
申请日：2000-12-20
申请人： Tetsuo Fukami , Katsuhiko Kumagawa , Masanori Kimura , Satoshi Asada , Yoneharu Takubo
发明人： Tetsuo Fukami , Katsuhiko Kumagawa , Masanori Kimura , Satoshi Asada , Yoneharu Takubo
IPC分类号： G02F1/1362 , G09G3/36 , G02F1/136 , G02F1/1333 , G02F1/1343
CPC分类号： G02F1/1362 , G09G3/3614 , G09G3/3648 , G09G2320/02
摘要： In a liquid crystal panel in which pseudo dot inversion driving is performed, the occurrence of flicker or vertical and horizontal strings is prevented by preventing an alignment shift between individual layers during the fabrication of a TFT array from producing a difference between the respective abilities of thin-film TFTs to charge adjacent pixels (61, 62). For this purpose, the liquid crystal display panel is constructed such that two TFTs which are enclosed by two adjacent image signal lines (21, 22) and scan signal lines (3) and adjacent to each other along the signal lines (21, 22) have respective source electrodes (71, 72) adjacent to the different image signal lines (21, 22). The source electrodes (71, 72) and drain electrodes (81, 82) of the two TFTs connected to the adjacent pixels (61, 62) are alternately arranged such that variations caused by the alignment shift in the sizes and areas of overlapping portions between the individual layers of the TFTs are equal or the same.
摘要翻译：在进行伪点反转驱动的液晶面板中，通过在TFT阵列的制造期间防止各层之间的对准偏移来防止闪烁或垂直和水平线的发生，从而产生薄的各个能力之间的差异薄膜TFT以对相邻像素（61,62）充电。为此，液晶显示面板被构造为使得由两个相邻的图像信号线（21,22）和扫描信号线（3）包围并沿着信号线（21,22）彼此相邻的两个TFT，具有与不同图像信号线（21,22）相邻的各个源电极（71,72）。连接到相邻像素（61,62）的两个TFT的源电极（71,72）和漏电极（81,82）交替地布置成使得由两个TFT之间的重叠部分的尺寸和面积的对准偏移引起的变化 TFT的各层相同或相同。

6. 发明授权

US06762816B1 Liquid crystal display with special electrode configurations and compositions and method for producing the same 有权
标题翻译：具有特殊电极结构的液晶显示器及其制造方法
公开(公告)号：US06762816B1
公开(公告)日：2004-07-13
申请号：US10009522
申请日：2001-12-11
申请人： Hiroyuki Yamakita , Katsuhiko Kumagawa , Kazuo Inoue , Akinori Shiota , Ichiro Sato , Hiroshi Satani , Masanori Kimura , Satoshi Asada
发明人： Hiroyuki Yamakita , Katsuhiko Kumagawa , Kazuo Inoue , Akinori Shiota , Ichiro Sato , Hiroshi Satani , Masanori Kimura , Satoshi Asada
IPC分类号： G02F11343
CPC分类号： G02F1/134363
摘要： A liquid crystal display comprises an array substrate in which a common electrode, a pixel electrode, a scanning signal line, a video signal line and a semiconductor switching element are provided, an opposed substrate, and a liquid crystal layer interposed between the array substrate and opposed substrate. The line width of at least either the common electrode or the pixel electrode is larger than the distance between the common electrode and the pixel electrode. The film thickness of at least one of the common electrode and the pixel electrode is larger than the thickness of at least either the scanning signal line or the video signal line. As a result, an inplane electric field liquid crystal display having a wide viewing angle, high-speed response, and high image quality such as high luminance is provided.
摘要翻译：液晶显示器包括其中设置有公共电极，像素电极，扫描信号线，视频信号线和半导体开关元件的阵列基板，相对基板和插入在阵列基板和相对基板。公共电极或像素电极中的至少任一方的线宽比公共电极和像素电极之间的距离大。公共电极和像素电极中的至少一个的膜厚比扫描信号线或视频信号线的至少一个的厚度大。结果，提供了具有宽视角，高速响应以及诸如高亮度的高图像质量的内平面电场液晶显示器。

7. 发明授权

US06717628B2 Liquid crystal display device 失效
公开(公告)号：US06717628B2
公开(公告)日：2004-04-06
申请号：US10279382
申请日：2002-10-23
申请人： Katsuhiko Kumagawa , Masanori Kimura , Tetsuo Fukami
发明人： Katsuhiko Kumagawa , Masanori Kimura , Tetsuo Fukami
IPC分类号： G02F11343
CPC分类号： G02F1/134363 , G02F1/136213
摘要： One of a pair of substrates with liquid crystals sandwiched therebetween includes a plurality of pixels each of which is provided with a scanning electrode, an image signal electrode, a switching element provided at an intersection of the scanning electrode and the image signal electrode, a pixel electrode connected to the image signal electrode via the switching element, a counter electrode, and a busbar electrically connected to the counter electrode. A portion of the pixel electrode is overlapped with the busbar so as to make up a storage capacitance. A shape of the pixel electrode is altered for each pixel so that a value of the storage capacitance becomes smaller from a feeding side to a termination side. The portion of the pixel electrode overlapped with the busbar so as to make up the storage capacitance is located within the busbar in a plan view of the device.

8. 发明授权

US06548035B1 Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same 有权
标题翻译：用于外延晶片的硅单晶晶片，外延晶片及其制造方法及其评估
公开(公告)号：US06548035B1
公开(公告)日：2003-04-15
申请号：US09868058
申请日：2001-06-14
申请人： Akihiro Kimura , Makoto Iida , Yoshinori Hayamizu , Ken Aihara , Masanori Kimura
发明人： Akihiro Kimura , Makoto Iida , Yoshinori Hayamizu , Ken Aihara , Masanori Kimura
IPC分类号： A01N4340
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206 , H01L21/3225
摘要： A silicon single crystal wafer for epitaxial growth grown by the CZ method, which is doped with nitrogen and has a V-rich region over its entire plane, or doped with nitrogen, has an OSF region in its plane, and shows an LEP density of 20/cm2 or less or an OSF density of 1×104/cm2 or less in the OSF region, epitaxial wafer utilizing the substrate, as well as methods for producing them and method for evaluating a substrate suitable for an epitaxial wafer. There are provided a substrate for an epitaxial wafer that suppresses crystal defects to be generated in an epitaxial layer when epitaxial growth is performed on a CZ silicon single crystal wafer doped with nitrogen and also has superior IG ability, epitaxial wafer utilizing the substrate, as well as methods for producing them and method for evaluating a substrate suitable for an epitaxial wafer.
摘要翻译：通过CZ法生长的用于外延生长的硅单晶晶片，其掺杂有氮并在其整个平面上具有富V区或掺杂氮，在其平面中具有OSF区，并且显示出LEP密度在OSF区域中使用20 / cm 2以下的OSF密度或1×10 4 / cm 2以下的OSF密度，利用该基板的外延晶片及其制造方法以及评价适用于外延晶片的基板的方法。提供了一种用于外延晶片的衬底，其抑制在掺杂氮的CZ硅单晶晶片上进行外延生长时外延层中产生的晶体缺陷，并且还具有优异的IG能力，以及利用衬底的外延晶片作为其制造方法和评价适用于外延晶片的基板的方法。

9. 发明授权

US06514426B2 Piezoelectric ceramic composition and piezoelectric element 有权
公开(公告)号：US06514426B2
公开(公告)日：2003-02-04
申请号：US09933410
申请日：2001-08-20
申请人： Ryosuke Tanimoto , Yoichi Tsuji , Masanori Kimura , Hitoshi Takagi
发明人： Ryosuke Tanimoto , Yoichi Tsuji , Masanori Kimura , Hitoshi Takagi
IPC分类号： B04B35462
CPC分类号： H01L41/187 , C04B35/491
摘要： A piezoelectric ceramic composition and a piezoelectric element in which cracks and chips are not likely to occur during working even if the thicknesses are reduced, are provided. The piezoelectric ceramic composition contains as a primary component, a complex oxide having a perovskite structure, composed of at least Pb, Zr, Ti, Mn, Nb and O, and represented by general formula ABO3, in which the total molar quantity of elements constituting A is smaller than the total molar quantity of elements constituting B, and Si is present as a secondary component at the content of about 0.010 wt % to 0.090 wt %, in terms of SiO2, relative to the primary component.

10. 发明授权

US6027562A Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method 有权
公开(公告)号：US6027562A
公开(公告)日：2000-02-22
申请号：US173931
申请日：1998-10-16
申请人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka
发明人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka
IPC分类号： C30B15/20 , C30B15/00 , C30B15/14 , C30B29/06
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206
摘要： A single crystal is grown in accordance with a Czochralski method such that the time for passing through a temperature zone of 1150-1080.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1150-1080.degree. C. in the temperature distribution is 2.0 cm or less. Alternatively, the single crystal is grown such that the time for passing through a temperature zone of 1250-1200.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1250-1200.degree. C. in the temperature distribution is 2.0 cm or less. This method decreases both the density and size of so-called grown-in defects such as FPD (100 defects/cm.sup.2 or less), LSTD, and COP (10 defects/cm.sup.2 or less) to thereby enable efficient production of a single crystal having an excellent good chip yield (80% or greater) in terms of oxide dielectric breakdown voltage characteristics.

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