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    • 5. 发明申请
    • SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME
    • 含有它的盐和光催化剂组合物
    • US20100304294A1
    • 2010-12-02
    • US12786799
    • 2010-05-25
    • Koji ICHIKAWAMasako SugiharaTatsuro Masuyama
    • Koji ICHIKAWAMasako SugiharaTatsuro Masuyama
    • G03F7/004C07D307/00G03F7/20C07D307/04
    • C07D307/80G03F7/0045G03F7/0046G03F7/0397
    • A salt represented by the formula (I-AA): wherein Q1 and Q2 each independently represent a fluorine atom or a C1-C4 perfluoroalkyl group, X1 represents a single bond etc., Y1 represents a C1-C36 aliphatic hydrocarbon group etc., A1 and A2 independently each represents a C1-C20 aliphatic hydrocarbon group etc., Ar1 represents a (m4+1)-valent C6-C20 aromatic hydrocarbon group which can have one or more substituents, B1 represents a single bond etc., m1 and m2 independently each represents an integer of 0 to 2, m3 represents an integer of 1 to 3, with the proviso that m1 plus m2 plus m3 equals 3, and m4 represents an integer of 1 to 3, and a photoresist composition comprising the salt represented by the formula (I-AA) and a resin comprising a structural unit having an acid-labile group and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid.
    • 由式(I-AA)表示的盐:其中Q1和Q2各自独立地表示氟原子或C1-C4全氟烷基,X1表示单键等,Y1表示C1-C36脂族烃基等, A1和A2各自独立地表示C1-C20脂族烃基等,Ar1表示可具有一个或多个取代基的(m4 + 1)价C6-C20芳族烃基,B1表示单键等,m1和 m2独立地表示0至2的整数,m3表示1至3的整数,条件是m1加上m2加m3等于3,m4表示1至3的整数,并且包含表示的盐的光致抗蚀剂组合物 通过式(I-AA)和包含具有酸不稳定基团的结构单元的树脂,并且在碱性水溶液中不溶或难溶,但通过酸作用而溶于碱水溶液中。
    • 6. 发明授权
    • Salt and photoresist composition containing the same
    • 含有其的盐和光致抗蚀剂组合物
    • US09346750B2
    • 2016-05-24
    • US12947349
    • 2010-11-16
    • Koji IchikawaMitsuyoshi OchiaiMasako Sugihara
    • Koji IchikawaMitsuyoshi OchiaiMasako Sugihara
    • C07C309/19C07C309/17C07C381/12C07D307/33C07D307/93C07D327/06C07D333/08G03F7/004G03F7/039G03F7/20
    • C07C309/17C07C381/12C07C2603/74C07D307/33C07D307/93C07D327/06C07D333/08G03F7/0045G03F7/0046G03F7/0397G03F7/2041
    • A salt represented by the formula (X): wherein Q1 and Q2 each independently represent a fluorine atom etc., L1 and L2 independently each represent a C1-C17 divalent saturated hydrocarbon group, ring W1 represents a C3-C36 saturated hydrocarbon ring, R2 is independently in each occurrence a hydroxyl group etc., s represents an integer of 0 to 2, Z+ represents an organic counter ion, and W10 represents a group represented by the formula (X-1): wherein ring W2 represents a C4-C36 saturated hydrocarbon ring in which one or more —CH2— can be replaced by —O— or —CO—, with the proviso that at least one —CH2— in the C4-C36 saturated hydrocarbon ring is replaced by —CO—, R3 is independently in each occurrence a C1-C6 alkyl group etc., and t represents an integer of 0 to 2, or a group represented by the formula (X-2): wherein ring W3 represents a C3-C36 saturated hydrocarbon ring, R4 is independently in each occurrence a hydroxyl group etc., R5 is independently in each occurrence a C1-C6 alkyl group etc., v represents an integer of 1 to 3, and w represents an integer of 0 to 2.
    • 由式(X)表示的盐:其中Q1和Q2各自独立地表示氟原子等,L1和L2各自独立地表示C1-C17二价饱和烃基,环W1表示C3-C36饱和烃环,R2 每次出现羟基等,s表示0〜2的整数,Z +表示有机抗衡离子,W10表示由式(X-1)表示的基团:其中,环W2表示C4-C36 饱和烃环,其中一个或多个-CH 2 - 可以被-O-或-CO-代替,条件是C4-C36饱和烃环中的至少一个-CH2-被-CO-代替,R3是 在每次出现时独立地为C1-C6烷基等,t表示0〜2的整数,或式(X-2)表示的基团:其中,环W3表示C3-C36饱和烃环,R4表示 在每次出现时都独立地是羟基等,R5各自独立地出现 含有C 1 -C 6烷基等,v表示1〜3的整数,w表示0〜2的整数。
    • 8. 发明申请
    • METHOD FOR PRODUCING RESIST PATTERN
    • 生产电阻图案的方法
    • US20100230136A1
    • 2010-09-16
    • US12720419
    • 2010-03-09
    • Koji ICHIKAWAMasako Sugihara
    • Koji ICHIKAWAMasako Sugihara
    • H05K1/00G03F7/20G03F7/004B32B3/30
    • H01L21/0274G03F7/0035G03F7/0045G03F7/0046G03F7/0397G03F7/40Y10T428/24479
    • The present invention provides a method for producing a resist pattern sufficiently miniaturized having an excellent shape including: repeating a process of forming a patterned resist film comprising the following step (1):(1) forming a resist film, and exposing the formed resist film, and the like to form a patterned resist film by n cycles to obtain a resist pattern, wherein the resist film exposed in the step (1) in at least one cycle of the n cycles of the process of forming the patterned resist film is a film formed by layering a resist composition containing a resin (B) that becomes soluble in an alkali aqueous solution by an action of an acid and has a weight-average molecular weight of 7,000 to 10,000 and a glass transition temperature of 150 to 200° C., a photoacid generator (A) and a crosslinking agent (C).
    • 本发明提供一种制造具有优异形状的抗蚀剂图案的方法,其特征在于包括:重复形成图案化抗蚀剂膜的方法,该方法包括以下步骤(1):(1)形成抗蚀剂膜,并使形成的抗蚀剂膜曝光 以形成图案化的抗蚀剂膜,以形成抗蚀剂图案,其中在形成图案化抗蚀剂膜的工艺的n个循环中的至少一个循环中,在步骤(1)中暴露的抗蚀剂膜为 通过使含有树脂(B)的抗蚀剂组合物层叠形成,所述抗蚀剂组合物通过酸的作用变成可溶于碱性水溶液的树脂(B),其重均分子量为7000〜10,000,玻璃化转变温度为150〜200℃ 光电产生剂(A)和交联剂(C)。