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1. 发明授权

US08267040B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08267040B2
公开(公告)日：2012-09-18
申请号：US10589272
申请日：2005-02-15
申请人： Kiyotaka Ishibashi , Junichi Kitagawa , Singo Furui , Cai Zhong Tian , Jun Yamashita , Nobuhiko Yamamoto , Tetsuya Nishizuka , Toshihisa Nozawa , Shinya Nishimoto , Tamaki Yuasa
发明人： Kiyotaka Ishibashi , Junichi Kitagawa , Singo Furui , Cai Zhong Tian , Jun Yamashita , Nobuhiko Yamamoto , Tetsuya Nishizuka , Toshihisa Nozawa , Shinya Nishimoto , Tamaki Yuasa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32192 , H01J37/32238
摘要： In a plasma processing apparatus that processes a wafer in a process vessel by plasma generated by the supply of a microwave, a transmissive window has, in a center area of its lower surface, a hanging portion made of the same material as a material of the transmissive window. Between an outer peripheral surface of the hanging portion and a sidewall inner surface continuing from a support part, a gap is formed, the gap having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at a contact point is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer is also reduced.
摘要翻译：在通过供给微波产生的等离子体处理处理容器中的晶片的等离子体处理装置中，透光窗口在其下表面的中心区域具有由与材料相同的材料制成的悬挂部分透光窗。在悬挂部的外周面与从支撑部延续的侧壁内表面之间形成有间隙，间隙长度为0.5〜10mm，更优选为0.5〜5mm。在接触点处产生强电场和等离子体被抑制，并且溅射的颗粒，自由基等到达晶片的量也减少。

2. 发明申请

US20070264441A1 Plasma Processing Apparatus and Plasma Processing Method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20070264441A1
公开(公告)日：2007-11-15
申请号：US10589272
申请日：2005-02-15
申请人： Kiyotaka Ishibashi , Junichi Kitagawa , Singo Furui , Cai Tian , Jun Yamashita , Nobuhiko Yamamoto , Tetsuya Nishizuka , Toshihisa Nozawa , Shinya Nishimoto , Tamaki Yuasa
发明人： Kiyotaka Ishibashi , Junichi Kitagawa , Singo Furui , Cai Tian , Jun Yamashita , Nobuhiko Yamamoto , Tetsuya Nishizuka , Toshihisa Nozawa , Shinya Nishimoto , Tamaki Yuasa
IPC分类号： C08F2/46 , C23C16/00
CPC分类号： H01J37/32192 , H01J37/32238
摘要： To improve processing quality by inhibiting the generation of a strong electric field and high-density plasma, near a contact point between a support part supporting a transmissive window and the transmissive window in a plasma processing apparatus utilizing a microwave. In a plasma processing apparatus that processes a wafer W in a process vessel 2 by plasma generated by the supply of a microwave, a transmissive window 20 has, in a center area of its lower surface, a hanging portion 21 made of the same material as a material of the transmissive window 20. Between an outer peripheral surface 21a of the hanging portion 21 and a sidewall inner surface 5a continuing from a support part 6, a gap d is formed, the gap d having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at the contact point C is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer W is also reduced.
摘要翻译：通过在利用微波的等离子体处理装置中，在支撑透射窗口的支撑部件与透射窗口之间的接触点附近抑制强电场和高密度等离子体的产生来提高处理质量。在通过由微波供给产生的等离子体处理处理容器2中的晶片W的等离子体处理装置中，透光窗20在其下表面的中心区域具有由与透气窗20的材料。在悬挂部分21的外周表面21a和从支撑部分6延伸的侧壁内表面5a之间形成间隙d，间隙d的间隙长度为0.5至 10mm，更优选为0.5〜5mm。在接触点C处产生强电场和等离子体被抑制，并且溅射的颗粒，自由基等到达晶片W的量也减少。

3. 发明授权

US08387560B2 Plasma processing unit 有权
标题翻译：等离子处理装置
公开(公告)号：US08387560B2
公开(公告)日：2013-03-05
申请号：US11632779
申请日：2005-07-21
申请人： Caizhong Tian , Kiyotaka Ishibashi , Junichi Kitagawa , Toshihisa Nozawa
发明人： Caizhong Tian , Kiyotaka Ishibashi , Junichi Kitagawa , Toshihisa Nozawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32211
摘要： The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.
摘要翻译：本发明提供一种等离子体处理单元，包括：处理容器，其顶部具有开口，能够在其中产生真空; 设置在处理容器中的用于在其上放置待处理物体的台阶; 由电介质制成的顶板，顶板气密地装配在开口中并允许微波通过; 平面天线部件，其设置在所述顶板上，所述平面天线部件设置有多个微波辐射孔，用于朝向所述处理容器的内部放射用于等离子体产生的微波; 设置在所述平面天线构件上的慢波构件，用于缩短微波的波长; 以及微波干扰抑制部，其设置在所述顶板的下表面上，所述微波干涉抑制部将所述下表面分割为多个同心区域，并抑制所述区域之间的微波干扰。

4. 发明申请

US20080035058A1 Plasma Processing Unit 有权
标题翻译：等离子处理单元
公开(公告)号：US20080035058A1
公开(公告)日：2008-02-14
申请号：US11632779
申请日：2005-07-21
申请人： Caizhong Tian , Kiyotaka Ishibashi , Junichi Kitagawa , Toshihisa Nozawa
发明人： Caizhong Tian , Kiyotaka Ishibashi , Junichi Kitagawa , Toshihisa Nozawa
IPC分类号： H05H1/46 , H01L21/205 , H01L21/3065
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32211
摘要： The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.
摘要翻译：本发明提供一种等离子体处理单元，包括：处理容器，其顶部具有开口，能够在其中产生真空; 设置在处理容器中的用于在其上放置待处理物体的台阶; 由电介质制成的顶板，顶板气密地装配在开口中并允许微波通过; 平面天线部件，其设置在所述顶板上，所述平面天线部件设置有多个微波辐射孔，用于向所述处理容器的内部放射用于等离子体产生的微波; 设置在所述平面天线构件上的慢波构件，用于缩短微波的波长; 以及微波干扰抑制部，其设置在所述顶板的下表面上，所述微波干涉抑制部将所述下表面分割为多个同心区域，并抑制所述区域之间的微波干扰。

5. 外观设计

USD571832S1 Top panel for microwave introduction window of a plasma processing apparatus 有权
标题翻译：等离子体处理装置的微波介绍窗口的顶板
公开(公告)号：USD571832S1
公开(公告)日：2008-06-24
申请号：US29252833
申请日：2006-01-30
申请人： Kinya Ota , Cai Zhong Tian , Junichi Kitagawa
设计人： Kinya Ota , Cai Zhong Tian , Junichi Kitagawa

6. 外观设计

USD571383S1 Top panel for microwave introduction window of a plasma processing apparatus 有权
公开(公告)号：USD571383S1
公开(公告)日：2008-06-17
申请号：US29252841
申请日：2006-01-30
申请人： Kinya Ota , Cai Zhong Tian , Junichi Kitagawa
设计人： Kinya Ota , Cai Zhong Tian , Junichi Kitagawa

7. 外观设计

USD571833S1 Top panel for microwave introduction window of plasma processing apparatus 有权
标题翻译：等离子体处理装置微波介绍窗口顶板
公开(公告)号：USD571833S1
公开(公告)日：2008-06-24
申请号：US29252840
申请日：2006-01-30
申请人： Kinya Ota , Cai Zhong Tian , Junichi Kitagawa
设计人： Kinya Ota , Cai Zhong Tian , Junichi Kitagawa

8. 外观设计

USD594485S1 Top panel for microwave introduction window of a plasma processing apparatus 有权
公开(公告)号：USD594485S1
公开(公告)日：2009-06-16
申请号：US29252837
申请日：2006-01-30
申请人： Kinya Ota , Cai Zhong Tian , Junichi Kitagawa
设计人： Kinya Ota , Cai Zhong Tian , Junichi Kitagawa

9. 外观设计

USD593585S1 Top panel for microwave introduction window of a plasma processing apparatus 有权
标题翻译：等离子体处理装置的微波介绍窗口的顶板
公开(公告)号：USD593585S1
公开(公告)日：2009-06-02
申请号：US29252839
申请日：2006-01-30
申请人： Kinya Ota , Cai Zhong Tian , Junichi Kitagawa
设计人： Kinya Ota , Cai Zhong Tian , Junichi Kitagawa

10. 外观设计

USD572733S1 Top panel for microwave introduction window of a plasma processing apparatus 有权
公开(公告)号：USD572733S1
公开(公告)日：2008-07-08
申请号：US29252838
申请日：2006-01-30
申请人： Kinya Ota , Cai Zhong Tian , Junichi Kitagawa
设计人： Kinya Ota , Cai Zhong Tian , Junichi Kitagawa

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