专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07315022B1 High-speed electron beam inspection 有权
标题翻译：高速电子束检查
公开(公告)号：US07315022B1
公开(公告)日：2008-01-01
申请号：US11031091
申请日：2005-01-06
申请人： David L. Adler , Mark A. McCord , Mehdi Vaez-Iravani , Liqun Han , Kirk J. Bertsche
发明人： David L. Adler , Mark A. McCord , Mehdi Vaez-Iravani , Liqun Han , Kirk J. Bertsche
IPC分类号： H01J37/20 , G01R31/28
CPC分类号： G01R31/307 , H01J37/244 , H01J37/28 , H01J2237/0653 , H01J2237/20214 , H01J2237/20228 , H01J2237/244 , H01J2237/24507 , H01J2237/24564 , H01J2237/24592 , H01J2237/248 , H01J2237/2809 , H01J2237/2817
摘要： One embodiment disclosed relates to an electron beam apparatus for inspection of a semiconductor wafer, wherein substantially an entire area of the wafer surface is scanned without moving the stage. A cathode ray tube (CRT) gun may be used to rapidly (and cost effectively) scan the beam over the wafer. Another embodiment disclosed relates to a high-speed automated e-beam inspector configured to scan the e-beam in one dimension while translating the wafer in a perpendicular direction. The translation may be linear, or alternatively, may be in a spiral path. Other embodiments are also disclosed.
摘要翻译：所公开的一个实施例涉及一种用于检查半导体晶片的电子束装置，其中在不移动载物台的情况下扫描晶片表面的大致整个区域。阴极射线管（CRT）枪可以用于快速（并且成本有效地）扫描晶片上的光束。所公开的另一实施例涉及一种配置成在一个维度上扫描电子束的高速自动电子束检查器，同时沿垂直方向平移晶片。平移可以是线性的，或者可以是螺旋形路径。还公开了其他实施例。

2. 发明授权

US07507959B2 Method for charging substrate to a potential 有权
标题翻译：将基板充电到电位的方法
公开(公告)号：US07507959B2
公开(公告)日：2009-03-24
申请号：US11644591
申请日：2006-12-21
申请人： Kirk J. Bertsche , Mark A. McCord
发明人： Kirk J. Bertsche , Mark A. McCord
IPC分类号： H01J37/14 , H01J37/28
CPC分类号： G21K7/00 , H01J37/026 , H01J2237/0045 , H01J2237/0048
摘要： A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating substrate to a target potential.
摘要翻译：将绝缘基板的表面充电至目标电位。在一个实施方案中，表面充满了较高能量的电子束，使得电子产率大于1。随后，表面被低能电子束淹没，使得电子产率小于1。在另一个实施例中，衬底被提供有处于大于目标电位的初始电位的状态的表面。然后用带电粒子充满表面，使得散射颗粒的电荷产率小于1，使得达到达到目标电势的稳定状态。另一个实施例涉及一种用于将绝缘衬底的表面充电到目标电位的装置。

3. 发明授权

US07446320B1 Electronically-variable immersion electrostatic lens 有权
标题翻译：电子可变浸没静电透镜
公开(公告)号：US07446320B1
公开(公告)日：2008-11-04
申请号：US11260586
申请日：2005-10-26
申请人： Mark A. McCord , Kirk J. Bertsche , Francisco Machuca
发明人： Mark A. McCord , Kirk J. Bertsche , Francisco Machuca
IPC分类号： H01J37/12 , H01J42/22
CPC分类号： H01J37/12 , H01J37/145 , H01J37/21 , H01J37/28 , H01J2237/1035 , H01J2237/281
摘要： One embodiment relates to an electronically-variable electrostatic immersion lens in an electron beam apparatus. The electrostatic immersion lens includes a top electrode configured with a first voltage applied thereto, an upper bottom electrode configured with a second voltage applied thereto, and a lower bottom electrode configured with a third voltage applied thereto. The third voltage is controlled separately from the second voltage. Other embodiments are also disclosed.
摘要翻译：一个实施例涉及电子束装置中的电子可变静电浸没透镜。静电浸没透镜包括配置有施加到其上的第一电压的上电极，施加有第二电压的上底电极，以及施加有第三电压的下底电极。第三电压与第二电压分开控制。还公开了其他实施例。

4. 发明授权

US07176468B2 Method for charging substrate to a potential 有权
标题翻译：将基板充电到电位的方法
公开(公告)号：US07176468B2
公开(公告)日：2007-02-13
申请号：US10942184
申请日：2004-09-16
申请人： Kirk J. Bertsche , Mark A. McCord
发明人： Kirk J. Bertsche , Mark A. McCord
IPC分类号： H01J37/244
CPC分类号： G21K7/00 , H01J37/026 , H01J2237/0045 , H01J2237/0048
摘要： A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating is substrate to a target potential.
摘要翻译：将绝缘基板的表面充电至目标电位。在一个实施方案中，表面充满了较高能量的电子束，使得电子产率大于1。随后，表面被低能电子束淹没，使得电子产率小于1。在另一个实施例中，衬底被提供有处于大于目标电位的初始电位的状态的表面。然后用带电粒子充满表面，使得散射颗粒的电荷产率小于1，使得达到达到目标电势的稳定状态。另一个实施例涉及一种用于将绝缘体的表面充电至靶电位的装置。

5. 发明授权

US07276694B1 Defect detection using energy spectrometer 有权
标题翻译：使用能量谱仪进行缺陷检测
公开(公告)号：US07276694B1
公开(公告)日：2007-10-02
申请号：US11092545
申请日：2005-03-29
申请人： Kirk J. Bertsche
发明人： Kirk J. Bertsche
IPC分类号： H01J37/28
CPC分类号： H01J37/244 , H01J2237/2446 , H01J2237/24475 , H01J2237/2448 , H01J2237/24485 , H01J2237/24495
摘要： One embodiment disclosed relates to an apparatus for detecting defects in substrates. An irradiation source is configured to generate an incident beam, and a lens system configured to focus the incident beam onto a target substrate so as to cause emission of electrons. A multiple-bin detector is configured to detect the emitted electrons, and each bin of the detector detects the emitted electrons within a range of energies. A processing system configured to process signals from the multiple-bin detector. Other embodiments are also disclosed.
摘要翻译：公开的一个实施例涉及用于检测基板中的缺陷的装置。照射源被配置为产生入射光束，以及透镜系统，被配置为将入射光束聚焦到目标衬底上以引起电子的发射。多埠检测器被配置为检测发射的电子，并且检测器的每一个检测器在能量范围内检测发射的电子。一种被配置为处理来自多仓检测器的信号的处理系统。还公开了其他实施例。

6. 发明授权

US07253410B1 Charge-control pre-scanning for e-beam imaging 有权
标题翻译：电子束成像的充电控制预扫描
公开(公告)号：US07253410B1
公开(公告)日：2007-08-07
申请号：US11225917
申请日：2005-09-13
申请人： Kirk J. Bertsche , John Greene
发明人： Kirk J. Bertsche , John Greene
IPC分类号： H01J37/244
CPC分类号： H01J37/026 , H01J37/263 , H01J37/28 , H01J2237/0044 , H01J2237/0048 , H01J2237/2809 , H01J2237/2817
摘要： One embodiment described relates to a method of electron beam imaging of a target area of a substrate. An electron beam column is configured for charge-control pre-scanning using a primary electron beam. A pre-scan is performed over the target area. The electron beam column is re-configured for imaging using the primary electron beam. An imaging scan is then performed over the target area. Other embodiments are also described.
摘要翻译：所描述的一个实施例涉及对基板的目标区域进行电子束成像的方法。电子束列被配置为使用一次电子束进行电荷控制预扫描。在目标区域上执行预扫描。电子束列被重新配置成使用一次电子束成像。然后在目标区域上执行成像扫描。还描述了其它实施例。

7. 发明授权

US08427185B2 Inline inspection of photovoltaics for electrical defects 失效
标题翻译：在线检查电气缺陷的光伏
公开(公告)号：US08427185B2
公开(公告)日：2013-04-23
申请号：US13024379
申请日：2011-02-10
申请人： George H. Zapalac, Jr. , Kirk J. Bertsche , David L. Brown , J. Kirkwood H. Rough , David A. Soltz , Yehiel Gotkis
发明人： George H. Zapalac, Jr. , Kirk J. Bertsche , David L. Brown , J. Kirkwood H. Rough , David A. Soltz , Yehiel Gotkis
IPC分类号： G01R31/308 , G01R31/08
CPC分类号： H02S50/10
摘要： A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material.
摘要翻译：一种用于电气异常的光伏材料的在线检查方法。第一电连接形成在光伏材料的第一表面上，并且第二电连接形成在光伏材料的相对的第二表面上。在光伏材料中感应到局部电流，并且使用第一和第二电连接来感测光伏材料中局部电流的特性。分析感测到的局部电流的性质以检测光伏材料中的电气异常。

8. 发明授权

US07394069B1 Large-field scanning of charged particles 有权
标题翻译：带电粒子的大场扫描
公开(公告)号：US07394069B1
公开(公告)日：2008-07-01
申请号：US11280829
申请日：2005-11-15
申请人： Kirk J. Bertsche
发明人： Kirk J. Bertsche
IPC分类号： G21K1/00
CPC分类号： H01J37/28 , B82Y10/00 , B82Y40/00 , H01J37/1474 , H01J37/3174 , H01J2237/1501 , H01J2237/1508 , H01J2237/151 , H01J2237/152 , H01J2237/24485
摘要： One embodiment relates to a charged-particle beam apparatus. The apparatus includes at least a source for generating the charged-particle beam, a first deflector, and a second deflector. The first deflector is configured to scan the charged-particle beam in a first dimension. The second deflector is configured to deflect the scanned beam such that the scanned beam impinges telecentrically (perpendicularly) upon a surface of a target substrate. Other embodiments are also disclosed.
摘要翻译：一个实施例涉及带电粒子束装置。该装置至少包括用于产生带电粒子束的源，第一偏转器和第二偏转器。第一偏转器被配置成在第一维度扫描带电粒子束。第二偏转器被配置为使扫描的光束偏转，使得扫描的光束以中心（垂直）方向照射到目标衬底的表面上。还公开了其他实施例。

9. 发明授权

US07019292B1 E-beam detection of defective contacts/vias with flooding and energy filter 有权
标题翻译：通过淹没和能量过滤器对缺陷接触/过孔进行电子束检测
公开(公告)号：US07019292B1
公开(公告)日：2006-03-28
申请号：US10869588
申请日：2004-06-15
申请人： Frank Y. H. Fan , David L. Adler , Kirk J. Bertsche , Luca Grella
发明人： Frank Y. H. Fan , David L. Adler , Kirk J. Bertsche , Luca Grella
IPC分类号： H01J37/256
CPC分类号： H01J37/05 , H01J37/28 , H01J2237/057 , H01J2237/281 , H01J2237/2817 , H01L22/14
摘要： One embodiment disclosed relates to a method for robustly detecting a defective high aspect ratio (HAR) feature. A surface area of a semiconductor specimen with HAR features thereon is charged up, and a primary beam is impinged onto the surface area. Scattered electrons that are generated due to the impingement of the primary beam are extracted from the surface area. An energy filter is applied to remove the scattered electrons with lower energies, and the filtered electrons are detected. Image data is generated from the detected electrons, and an intensity threshold is applied to the image data.
摘要翻译：公开的一个实施例涉及用于鲁棒地检测有缺陷的高纵横比（HAR）特征的方法。其上具有HAR特征的半导体样品的表面积被充电，并且主光束撞击到表面区域。从表面区域提取由于主光束的撞击而产生的分散电子。应用能量滤波器去除具有较低能量的散射电子，并且检测滤波电子。从检测到的电子生成图像数据，并且将强度阈值应用于图像数据。

10. 发明授权

US06822246B2 Ribbon electron beam for inspection system 失效
标题翻译：带状电子束检查系统
公开(公告)号：US06822246B2
公开(公告)日：2004-11-23
申请号：US10109168
申请日：2002-03-27
申请人： Kirk J. Bertsche
发明人： Kirk J. Bertsche
IPC分类号： H01J3708
CPC分类号： H01J37/28 , H01J2237/0492 , H01J2237/083 , H01J2237/2817
摘要： Apparatus configurations are disclosed for generating a ribbon-like beam that impinges onto a target specimen as an elongated spot. The elongated spot has a first dimension that is substantially elongated in comparison to a second dimension. The configuration may be non-axisymmetric and include means for point-to-parallel focusing in the first dimension and point-to-point focusing in the second dimension. In accordance with one embodiment, the apparatus may include a first lens subsystem for transforming the electron beam into an intermediate-stage beam, and a second lens subsystem for focusing the intermediate-stage beam into the elongated spot. Methods are disclosed for focusing the electron beam into the elongated spot. In accordance with one embodiment, a method may include transforming the electron beam into an intermediate-stage beam, and focusing the intermediate-stage beam into a ribbon-like beam that impinges onto a target specimen as an elongated spot.
摘要翻译：公开了用于产生作为细长斑点撞击到靶标本上的带状束的装置结构。细长点具有与第二尺寸相比基本上细长的第一尺寸。该配置可以是非轴对称的，并且包括在第一维度中的点对平行聚焦和在第二维度中的点对点聚焦的装置。根据一个实施例，该装置可以包括用于将电子束转换成中间级光束的第一透镜子系统和用于将中间级光束聚焦到细长光斑中的第二透镜子系统。公开了用于将电子束聚焦到细长点中的方法。根据一个实施例，一种方法可以包括将电子束转换成中间级光束，并将中间级光束聚焦成作为细长光斑撞击到目标样本上的带状光束。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式