专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090115449A1 ON DIE TERMINATION DEVICE AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME 有权
标题翻译：打印终端装置和包括其的半导体存储装置
公开(公告)号：US20090115449A1
公开(公告)日：2009-05-07
申请号：US12181628
申请日：2008-07-29
申请人： Ki-Ho KIM , Ji-Eun JANG
发明人： Ki-Ho KIM , Ji-Eun JANG
IPC分类号： H03K19/003
CPC分类号： G11C5/063 , G11C7/1051 , G11C7/1057 , G11C2207/2254
摘要： On die termination (ODT) device that can reduce the number of lines for transferring calibration codes to reduce the size of a chip including the ODT device. The ODT device includes a calibration circuit configured to generate calibration codes for determining a termination resistance, a counting circuit configured to generate counting codes increasing with time. A transferring circuit of the device is configured sequentially to transfer the calibration codes in response to the counting codes. A receiving circuit is configured sequentially to receive the calibration codes from the transferring circuit in response to the counting codes. A termination resistance circuit of the device is configured to perform impedance matching using a resistance determined according to the calibration codes.
摘要翻译：在终端（ODT）设备上，可以减少用于传送校准码的行数，以减少包括ODT设备在内的芯片的尺寸。 ODT装置包括：校准电路，被配置为产生用于确定终止电阻的校准码;计数电路，被配置为产生随时间增加的计数码。依次配置设备的传送电路以响应于计数代码传送校准代码。接收电路被顺序配置以响应于计数代码从传送电路接收校准码。该器件的终端电阻电路被配置为使用根据校准码确定的电阻来执行阻抗匹配。

2. 发明申请

US20080304336A1 SEMICONDUCTOR MEMORY DEVICE WITH ZQ CALIBRATION 失效
标题翻译：具有ZQ校准的半导体存储器件
公开(公告)号：US20080304336A1
公开(公告)日：2008-12-11
申请号：US11967528
申请日：2007-12-31
申请人： Ki-Ho KIM , Ji-Eun Jang
发明人： Ki-Ho KIM , Ji-Eun Jang
IPC分类号： G11C7/00
CPC分类号： G11C29/02 , G11C5/063 , G11C29/028 , G11C29/50008
摘要： A semiconductor memory device is capable of outputting calibration codes to an external circuit. The semiconductor memory device includes a data output control unit for controlling an output of data, a calibration code output control unit for transmitting calibration codes to determine a termination resistance value, a test mode signal generating unit for generating a test mode signal which is enabled in the test mode for outputting the calibration codes, and a test mode control unit for selectively outputting the data or the calibration codes in response to the test mode signal.
摘要翻译：半导体存储器件能够向外部电路输出校准代码。半导体存储器件包括用于控制数据输出的数据输出控制单元，用于发送校准代码以确定终端电阻值的校准代码输出控制单元，用于产生测试模式信号的测试模式信号生成单元，用于输出校准代码的测试模式，以及用于响应于测试模式信号选择性地输出数据或校准代码的测试模式控制单元。

3. 发明申请

US20090002003A1 PROBE-TESTING DEVICE AND METHOD OF SEMICONDUCTOR DEVICE 失效
标题翻译：探测器件和半导体器件的方法
公开(公告)号：US20090002003A1
公开(公告)日：2009-01-01
申请号：US11967729
申请日：2007-12-31
申请人： Ki-Ho KIM , Ji-Eun JANG
发明人： Ki-Ho KIM , Ji-Eun JANG
IPC分类号： G01R31/26 , G01R35/00
CPC分类号： G01R35/005 , G01R1/06766 , G01R1/06772 , G01R31/3191
摘要： A probe-testing device includes probe tips configured to apply inputs to pads of a semiconductor chip, wherein one of the probe tips is connected to a calibration pad for impedance adjustment and a calibration resistor is connected thereto.
摘要翻译：探针测试装置包括被配置为向半导体芯片的焊盘施加输入的探针尖端，其中探针尖端中的一个连接到用于阻抗调节的校准焊盘，并且校准电阻器被连接到其上。

4. 发明申请

US20080211533A1 IMPEDANCE MATCHING CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE WITH THE SAME 有权
标题翻译：阻抗匹配电路和具有相同功能的半导体存储器件
公开(公告)号：US20080211533A1
公开(公告)日：2008-09-04
申请号：US11967576
申请日：2007-12-31
申请人： Ki-Ho KIM , Chun-Seok Jeong
发明人： Ki-Ho KIM , Chun-Seok Jeong
IPC分类号： H03K17/16
CPC分类号： H03K19/0005 , G11C5/063 , G11C7/1048 , G11C2207/2254
摘要： An impedance matching circuit includes a code generating unit for generating a calibration code in response to a reference voltage and a voltage on a node, a calibration resistance unit for supplying a power supply voltage to the node, being calibrated to an external resistor, wherein the calibration resistance unit includes a switching unit for turning on/off a plurality of resistors connected in parallel in response to the calibration code, a termination pull-up resistance unit provided at an output node for receiving the calibration code, wherein the termination pull-up resistance unit has a switching unit which is identical to that of the calibration resistance unit, and a termination pull-down resistance unit at the output node, for receiving the calibration code, wherein the termination pull-down resistance unit has a switching unit which is identical to that of the calibration resistance unit.
摘要翻译：阻抗匹配电路包括：代码产生单元，用于响应于参考电压和节点上的电压产生校准代码;校准电阻单元，用于向节点提供电源电压，被校准到外部电阻器，其中，校准电阻单元包括用于响应于校准代码并联连接的多个电阻器的开/关的开关单元，设置在输出节点处用于接收校准代码的端接上拉电阻单元，其中终端上拉电阻单元具有与校准电阻单元相同的开关单元和输出节点处的端接下拉电阻单元，用于接收校准代码，其中端接下拉电阻单元具有切换单元，其为与校准电阻单元相同。

5. 发明申请

US20090273992A1 SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF 有权
标题翻译：半导体器件及其工作方法
公开(公告)号：US20090273992A1
公开(公告)日：2009-11-05
申请号：US12164167
申请日：2008-06-30
申请人： Ki-Ho KIM , Chang-Ho Do
发明人： Ki-Ho KIM , Chang-Ho Do
IPC分类号： G11C7/00
CPC分类号： G11C29/48 , G11C7/1078 , G11C29/1201
摘要： A semiconductor device includes a pad configured to receive a data strobe signal, and a path selector configured to output the data strobe signal through a corresponding input path during a normal operation, and to output the data strobe signal through a plurality of input paths in response to a path selection signal during a test operation.
摘要翻译：半导体器件包括：接收数据选通信号的焊盘;以及路径选择器，被配置为在正常操作期间通过对应的输入路径输出数据选通信号，并且响应于多个输入路径输出数据选通信号到测试操作期间的路径选择信号。

6. 发明申请

US20090146683A1 CALIBRATION CIRCUIT OF ON-DIE TERMINATION DEVICE 有权
标题翻译：烧录终端装置的校准电路
公开(公告)号：US20090146683A1
公开(公告)日：2009-06-11
申请号：US12099350
申请日：2008-04-08
申请人： Ki-Ho KIM
发明人： Ki-Ho KIM
IPC分类号： H03K17/16
CPC分类号： H03K19/0005
摘要： A calibration circuit of an on-die termination device includes a code generating unit configured to receive a voltage of a calibration node and a reference voltage, to generate calibration codes. The calibration unit also includes a calibration resistor unit having parallel resistors which are turned on/off in response to each of the calibration codes and connected to the calibration node, a turn-on strength of at least one of the parallel resistors being controlled by a control signal.
摘要翻译：片上终端装置的校准电路包括被配置为接收校准节点的电压和参考电压的代码生成单元，以生成校准代码。校准单元还包括校准电阻器单元，其具有响应于每个校准代码并连接到校准节点的导通/截止的并联电阻器，至少一个并联电阻器的接通强度由控制信号。

7. 发明申请

US20100061159A1 SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD THEREOF 有权
标题翻译：半导体存储器件及其驱动方法
公开(公告)号：US20100061159A1
公开(公告)日：2010-03-11
申请号：US12336164
申请日：2008-12-16
申请人： Ki-Ho KIM , Kang-Seol Lee
发明人： Ki-Ho KIM , Kang-Seol Lee
IPC分类号： G11C7/00 , G11C5/14 , G11C8/08
CPC分类号： G11C7/1078 , G11C5/143 , G11C7/1051 , G11C7/1057 , G11C7/1066 , G11C7/1084 , G11C11/4074 , G11C11/4093
摘要： A semiconductor memory device includes a data input driver and a data output driver for receiving an external power supply voltage, and for inputting and outputting data, respectively; and a voltage detector for detecting the external power supply voltage to generate a detection signal, wherein a drive current of each of the data input driver and the data output driver is controlled by the detection signal.
摘要翻译：半导体存储器件包括数据输入驱动器和用于接收外部电源电压的数据输出驱动器，并分别用于输入和输出数据; 以及电压检测器，用于检测外部电源电压以产生检测信号，其中数据输入驱动器和数据输出驱动器中的每一个的驱动电流由检测信号控制。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式