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1. 发明授权

US07145212B2 Method for manufacturing device substrate with metal back-gate and structure formed thereby 有权
公开(公告)号：US07145212B2
公开(公告)日：2006-12-05
申请号：US10868791
申请日：2004-06-17
申请人： Kevin K. Chan , Lijuan Huang , Fenton R. McFeely , Paul M. Solomon , Hon-Sum Philip Wong
发明人： Kevin K. Chan , Lijuan Huang , Fenton R. McFeely , Paul M. Solomon , Hon-Sum Philip Wong
IPC分类号： H01L29/76
CPC分类号： H01L29/66772 , H01L21/76251 , H01L29/78648
摘要： A method (and resultant structure) of forming a semiconductor device, includes forming a metal-back-gate over a substrate and a metal back-gate, forming a passivation layer on the metal back-gate to prevent the metal back-gate from reacting with radical species, and providing an intermediate gluing layer between the substrate and the metal back-gate to enhance adhesion.

2. 发明授权

US06797604B2 Method for manufacturing device substrate with metal back-gate and structure formed thereby 有权
标题翻译：制造具有金属背栅的器件衬底和由此形成的结构的方法
公开(公告)号：US06797604B2
公开(公告)日：2004-09-28
申请号：US09817120
申请日：2001-03-27
申请人： Kevin K. Chan , Lijuan Huang , Fenton R. McFeely , Paul M. Solomon , Hon-Sum Philip Wong
发明人： Kevin K. Chan , Lijuan Huang , Fenton R. McFeely , Paul M. Solomon , Hon-Sum Philip Wong
IPC分类号： H01L214763
CPC分类号： H01L29/66772 , H01L21/76251 , H01L29/78648
摘要： A method (and resultant structure) of forming a semiconductor device, includes forming a metal-back-gate over a substrate and a metal back-gate, forming a passivation layer on the metal back-gate to prevent the metal back-gate from reacting with radical species, and providing an intermediate gluing layer between the substrate and the metal back-gate to enhance adhesion.
摘要翻译：形成半导体器件的方法（和结果）包括在衬底和金属背栅上形成金属反向栅极，在金属背栅上形成钝化层，以防止金属背栅极反应具有自由基物质，并且在基材和金属背栅之间提供中间胶合层以增强粘合性。

3. 发明授权

US06579614B2 Structure having refractory metal film on a substrate 有权
$Structure having refractory metal film on a substrate$
标题翻译：在基板上具有难熔金属膜的结构
公开(公告)号：US06579614B2
公开(公告)日：2003-06-17
申请号：US09814766
申请日：2001-03-23
申请人： Kevin K. Chan , Erin C. Jones , Fenton R. McFeely , Paul M. Solomon , John J. Yurkas
发明人： Kevin K. Chan , Erin C. Jones , Fenton R. McFeely , Paul M. Solomon , John J. Yurkas
IPC分类号： B32B900
CPC分类号： C23C16/56 , H01L21/28008 , H01L21/32053 , H01L21/3211 , H01L29/4908 , Y10T428/12576 , Y10T428/12583 , Y10T428/12674 , Y10T428/1284 , Y10T428/265
摘要： A method of treating structures (and the structure formed thereby), so as to prevent or retard the oxidation of a metal film, and/or prevent its delamination a substrate, includes providing a structure including a refractory metal film formed on a substrate, placing the structure into a vessel having a base pressure below approximately 10−7 torr, exposing the structure to a silane gas at a sufficiently high predetermined temperature and predetermined pressure to cause formation of a metal silicide layer on the refractory metal film, and exposing the structure to a second gas at a sufficiently high temperature and pressure to nitride the metal silicide layer into a nitrided layer.
摘要翻译：一种处理结构（及其形成的结构）的方法，以防止或延缓金属膜的氧化和/或防止其基板的分层，包括提供包括在基板上形成的难熔金属膜的结构，放置将结构转换成基本压力低于约10 -7乇的容器，将结构暴露于足够高的预定温度和预定压力下的硅烷气体，以在难熔金属膜上形成金属硅化物层，并使结构暴露以足够高的温度和压力将第二气体氮化成氮化层。

4. 发明授权

US06238737B1 Method for protecting refractory metal thin film requiring high temperature processing in an oxidizing atmosphere and structure formed thereby 失效
$Method for protecting refractory metal thin film requiring high temperature processing in an oxidizing atmosphere and structure formed thereby$
标题翻译：用于保护在氧化气氛中需要高温处理的难熔金属薄膜和由此形成的结构的方法
公开(公告)号：US06238737B1
公开(公告)日：2001-05-29
申请号：US09337550
申请日：1999-06-22
申请人： Kevin K. Chan , Erin C. Jones , Fenton R. McFeely , Paul M. Solomon , John J. Yurkas
发明人： Kevin K. Chan , Erin C. Jones , Fenton R. McFeely , Paul M. Solomon , John J. Yurkas
IPC分类号： C23C1634
CPC分类号： C23C16/56 , H01L21/28008 , H01L21/32053 , H01L21/3211 , H01L29/4908 , Y10T428/12576 , Y10T428/12583 , Y10T428/12674 , Y10T428/1284 , Y10T428/265
摘要： A method of treating structures (and the structure formed thereby), so as to prevent or retard the oxidation of a metal film, and/or prevent its delamination a substrate, includes providing a structure including a refractory metal film formed on a substrate, placing the structure into a vessel having a base pressure below approximately 10−7 torr, exposing the structure to a silane gas at a sufficiently high predetermined temperature and predetermined pressure to cause formation of a metal silicide layer on the refractory metal film, and exposing the structure to a second gas at a sufficiently high temperature and pressure to nitride the metal silicide layer into a nitrided layer.
摘要翻译：一种处理结构（及其形成的结构）的方法，以防止或延缓金属膜的氧化和/或防止其基板的分层，包括提供包括在基板上形成的难熔金属膜的结构，将将结构转换成基本压力低于约10 -7乇的容器，将结构暴露于足够高的预定温度和预定压力下的硅烷气体，以在难熔金属膜上形成金属硅化物层，并使结构暴露以足够高的温度和压力将第二气体氮化成氮化层。

5. 发明授权

US06448131B1 Method for increasing the capacitance of a trench capacitor 失效
标题翻译：增加沟槽电容器电容的方法
公开(公告)号：US06448131B1
公开(公告)日：2002-09-10
申请号：US09929182
申请日：2001-08-14
申请人： Cyril Cabral, Jr. , Kevin K. Chan , Guy M. Cohen , Ramachandra Divakaruni , Christian Lavoie , Fenton R. McFeely
发明人： Cyril Cabral, Jr. , Kevin K. Chan , Guy M. Cohen , Ramachandra Divakaruni , Christian Lavoie , Fenton R. McFeely
IPC分类号： H01L218242
CPC分类号： H01L27/1087 , H01L28/84 , H01L29/66181 , Y10S438/964
摘要： A method for increasing the trench capacitor surface area is provided. The method, which utilizes a metal silicide to roughen the trench walls, increases capacitance due to the increase in the trench surface area after the silicide has been removed. The roughening of the trench walls can be controlled by varying one or more of the following parameters: the density of the metal, the metal film thickness, the silicide phase, and the choice of the metal. Once the metal is deposited in the trench, the method is self-limited. Shrinking the trench to its original width can be obtained by subsequent silicon deposition or by diffusion of silicon from a cap layer through the silicide.
摘要翻译：提供了一种用于增加沟槽电容器表面积的方法。利用金属硅化物粗糙化沟槽壁的方法由于硅化物被去除之后的沟槽表面积的增加而增加了电容。可以通过改变一个或多个以下参数来控制沟槽壁的粗糙化：金属的密度，金属膜厚度，硅化物相以及金属的选择。一旦金属沉积在沟槽中，该方法是自限制的。通过随后的硅沉积或通过硅化物从盖层扩散硅可以获得将沟槽缩小至原始宽度。

6. 发明授权

US06603181B2 MOS device having a passivated semiconductor-dielectric interface 失效
标题翻译： MOS器件具有钝化的半导体 - 电介质界面
公开(公告)号：US06603181B2
公开(公告)日：2003-08-05
申请号：US09760621
申请日：2001-01-16
申请人： Paul M. Solomon , Douglas A. Buchanan , Eduard A. Cartier , Kathryn W. Guarini , Fenton R. McFeely , Huiling Shang , John J. Yourkas
发明人： Paul M. Solomon , Douglas A. Buchanan , Eduard A. Cartier , Kathryn W. Guarini , Fenton R. McFeely , Huiling Shang , John J. Yourkas
IPC分类号： H01L2976
CPC分类号： H01L29/517 , H01L21/263 , H01L21/28079 , H01L29/495 , Y10S438/91
摘要： A MOS structure processed to have a semiconductor-dielectric interface that is passivated to reduce the interface state density. An example is a MOSFET having a gate dielectric on which an electrode is present that is substantially impervious to molecular hydrogen, but sufficiently thin to be pervious to atomic hydrogen, enabling atomic hydrogen to be diffused therethrough into an underlying semiconductor-dielectric interface. Atomic hydrogen diffusion can be achieved by subjecting such an electrode to hydrogen plasma, forming the electrode of an aluminum-tungsten alloy in the presence of hydrogen, and implanting atomic hydrogen into the electrode. The latter two techniques are each followed by an anneal to cause the atomic hydrogen to diffuse through the electrode and into the semiconductor-dielectric interface.
摘要翻译：被处理成具有钝化的半导体 - 电介质界面以降低界面态密度的MOS结构。一个例子是具有栅电介质的MOSFET，其上存在基本上不透分子氢的电极，但是足够薄以能够透过原子氢，使原子氢能够通过其扩散到下面的半导体介电界面中。原子氢扩散可以通过使这样的电极经受氢等离子体，在氢的存在下形成铝 - 钨合金的电极，并将原子氢注入到电极中来实现。后两种技术之后各自进行退火以使原子氢扩散通过电极并进入半导体 - 电介质界面。

7. 发明授权

US06803266B2 Process for passivating the semiconductor-dielectric interface of a MOS device and MOS device formed thereby 失效
标题翻译：钝化MOS器件的半导体介质接口和由此形成的MOS器件的工艺
公开(公告)号：US06803266B2
公开(公告)日：2004-10-12
申请号：US10249184
申请日：2003-03-20
申请人： Paul M. Solomon , Douglas A. Buchanan , Eduard A. Cartier , Kathryn W. Guarini , Fenton R. McFeely , Huiling Shang , John J. Yourkas
发明人： Paul M. Solomon , Douglas A. Buchanan , Eduard A. Cartier , Kathryn W. Guarini , Fenton R. McFeely , Huiling Shang , John J. Yourkas
IPC分类号： H01L21336
CPC分类号： H01L29/517 , H01L21/263 , H01L21/28079 , H01L29/495 , Y10S438/91
摘要： A process for passivating the semiconductor-dielectric interface of a MOS structure to reduce the interface state density to a very low level. A particular example is a MOSFET having a tungsten electrode that in the past has prevented passivation of the underlying semiconductor-dielectric interface to an extent sufficient to reduce the interface state density to less than 5×1010/cm2−eV. Though substantially impervious to molecular hydrogen, thin tungsten layers are shown to be pervious to atomic hydrogen, enabling atomic hydrogen to be diffused through a tungsten electrode into an underlying semiconductor-dielectric interface. Three general approaches are encompassed: forming an aluminum-tungsten electrode stack in the presence of hydrogen so as to store atomic hydrogen between the tungsten and aluminum layers, followed by an anneal to cause the atomic hydrogen to diffuse through the tungsten layer and into the interface; subjecting a tungsten electrode to hydrogen plasma, during which atomic hydrogen diffuses through the electrode and into the semiconductor-dielectric interface; and implanting atomic hydrogen into tungsten electrode, followed by an anneal to cause the atomic hydrogen to diffuse through the electrode and into the semiconductor-dielectric interface.
摘要翻译：一种用于钝化MOS结构的半导体 - 电介质界面以将界面态密度降低到非常低的水平的方法。具体的示例是具有钨电极的MOSFET，其过去已经阻止下面的半导体 - 电介质界面的钝化达到足以将界面态密度降低到小于5×10 10 / cm 2 -eV的程度。虽然基本上不透分子氢，但是显示出薄钨层可以透过原子氢，使原子氢能够通过钨电极扩散到下面的半导体 - 电介质界面。包括三种一般方法：在氢的存在下形成铝 - 钨电极堆叠，以便在钨和铝层之间存储原子氢，随后进行退火，使原子氢扩散通过钨层并进入界面 ; 使钨电极经受氢等离子体，其中原子氢通过电极扩散并进入半导体 - 电介质界面; 并将原子氢注入钨电极中，随后进行退火，使原子氢扩散通过电极并进入半导体 - 电介质界面。

8. 发明申请

US20110285021A1 NOBLE METAL CAP FOR INTERCONNECT STRUCTURES 有权
标题翻译：用于互连结构的NOBLE金属盖
公开(公告)号：US20110285021A1
公开(公告)日：2011-11-24
申请号：US13191090
申请日：2011-07-26
申请人： Chih-Chao Yang , Daniel C. Edelstein , Fenton R. McFeely
发明人： Chih-Chao Yang , Daniel C. Edelstein , Fenton R. McFeely
IPC分类号： H01L23/52 , B82Y99/00
CPC分类号： H01L21/76826 , H01L21/76849 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure that includes a dielectric material having a dielectric constant of about 3.0 or less is provided. This low k dielectric material has at least one conductive material having an upper surface embedded therein. The dielectric material also has a surface layer that is made hydrophobic prior to the formation of the noble metal cap. The noble metal cap is located directly on the upper surface of the at least one conductive material. Because of the presence of the hydrophobic surface layer on the dielectric material, the noble metal cap does not substantially extend onto the hydrophobic surface layer of the dielectric material that is adjacent to the at least one conductive material and no metal residues from the noble metal cap deposition form on this hydrophobic dielectric surface.
摘要翻译：提供了包括具有约3.0或更小介电常数的介电材料的互连结构。该低k电介质材料具有至少一个具有嵌入其中的上表面的导电材料。电介质材料还具有在形成贵金属盖之前被制成疏水性的表面层。贵金属盖直接位于至少一个导电材料的上表面上。由于在电介质材料上存在疏水表面层，贵金属盖基本上不会延伸到与至少一种导电材料相邻的电介质材料的疏水表面层上，并且没有贵金属帽的金属残留物沉积形式在该疏水电介质表面上。

9. 发明授权

US07863083B2 High temperature processing compatible metal gate electrode for pFETS and methods for fabrication 有权
标题翻译：用于pFETS的高温处理兼容金属栅电极及其制造方法
公开(公告)号：US07863083B2
公开(公告)日：2011-01-04
申请号：US12197845
申请日：2008-08-25
申请人： Ricky Amos , Douglas A. Buchanan , Cyril Cabral, Jr. , Alessandro C. Callegari , Supratik Guha , Hyungjun Kim , Fenton R. McFeely , Vijay Narayanan , Kenneth P. Rodbell , John J. Yurkas
发明人： Ricky Amos , Douglas A. Buchanan , Cyril Cabral, Jr. , Alessandro C. Callegari , Supratik Guha , Hyungjun Kim , Fenton R. McFeely , Vijay Narayanan , Kenneth P. Rodbell , John J. Yurkas
IPC分类号： H01L21/00 , H01L21/76 , H01L21/266 , H01L21/425
CPC分类号： H01L29/495 , H01L21/28079 , H01L21/3003
摘要： A method for fabricating a CMOS gate electrode by using Re, Rh, Pt, Ir or Ru metal and a CMOS structure that contains such gate electrodes are described. The work functions of these metals make them compatible with current pFET requirements. For instance, the metal can withstand the high hydrogen pressures necessary to produce properly passivated interfaces without undergoing chemical changes. The thermal stability of the metal on dielectric layers such as SiO2, Al2O3 and other suitable dielectric materials makes it compatible with post-processing temperatures up to 1000° C. A low temperature/low pressure CVD technique with Re2(CO)10 as the source material is used when Re is to be deposited.
摘要翻译：描述了通过使用Re，Rh，Pt，Ir或Ru金属制造CMOS栅电极的方法和包含这种栅电极的CMOS结构。这些金属的工作功能使其与当前的pFET要求兼容。例如，金属可以承受生产适当钝化界面而不经历化学变化所需的高氢气压力。金属在介电层上的热稳定性如SiO 2，Al 2 O 3和其它合适的介电材料使其与后处理温度高达1000℃相兼容。具有Re2（CO）10作为源的低温/低压CVD技术当Re沉积时使用材料。

10. 发明授权

US07749802B2 Process for chemical vapor deposition of materials with via filling capability and structure formed thereby 失效
标题翻译：具有通孔填充能力和由此形成的结构的材料的化学气相沉积工艺
公开(公告)号：US07749802B2
公开(公告)日：2010-07-06
申请号：US11621365
申请日：2007-01-09
申请人： Fenton R. McFeely , Alejandro G. Schrott , John J. Yurkas
发明人： Fenton R. McFeely , Alejandro G. Schrott , John J. Yurkas
IPC分类号： H01L21/00 , H01L21/82 , H01L21/20
CPC分类号： C23C16/30 , H01L21/28556 , H01L21/76877 , H01L45/06 , H01L45/1233 , H01L45/148 , H01L45/1616 , H01L45/1683 , Y10T428/249994
摘要： A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge) and antimony (Sb) which, in some embodiments, has the ability to fill high aspect ratio openings is provided. The CVD method of the instant invention permits for the control of GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400° C., which makes the inventive method compatible with existing interconnect processes and materials. In addition to the above, the inventive method is a non-selective CVD process, which means that the GeSb materials are deposited equally well on insulating and non-insulating materials.
摘要翻译：提供了一种用于沉积包括锗（Ge）和锑（Sb）在内的材料的化学气相沉积（CVD）方法，其在一些实施例中具有填充高纵横比开口的能力。本发明的CVD方法允许在宽范围的值范围内控制GeSb化学计量，并且本发明的方法在低于400℃的衬底温度下进行，这使得本发明的方法与现有的互连工艺和材料兼容。除了上述之外，本发明的方法是非选择性CVD工艺，这意味着GeSb材料在绝缘和非绝缘材料上同样良好地沉积。

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