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1. 发明授权

US06936891B2 Semiconductor memory device and manufacturing method therefor 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US06936891B2
公开(公告)日：2005-08-30
申请号：US10414720
申请日：2003-04-16
申请人： Kenji Saito , Hiroshi Furuta
发明人： Kenji Saito , Hiroshi Furuta
IPC分类号： H01L21/8247 , G11C16/04 , H01L21/8246 , H01L27/115 , H01L29/788 , H01L29/792 , H01L29/76
CPC分类号： H01L27/11568 , G11C16/0475 , H01L27/115 , Y10S257/90 , Y10S257/909
摘要： A semiconductor memory device, adapted for storing plural bits per cell to be able to accomplish high storage density by a simplified structure, includes a plurality of first gate electrodes extending parallel to one another along one direction and a plurality of second gate electrodes extending in a direction of intersecting the first gate electrodes, in which a diffusion region is provided on each of a plurality of divisions demarcated in a matrix-like pattern by first and second electrodes on a substrate surface. One of the divisions, the four sides of which are defined by two neighboring first gate electrodes and two neighboring second gate electrodes, has four independently accessible bits, and is connected by a contact (CT) with a diffusion region in the division. There are provided a plurality of interconnections connected via contacts to the diffusion regions of other divisions in the plural matrix-like divisions lying on the line of extension of the aforementioned diagonal line. A plurality of the aforementioned interconnections are arranged for extending parallel to one another in the memory cell array in an oblique direction relative to the lattice of the first and second electrodes.
摘要翻译：一种半导体存储器件，适用于通过简化的结构存储能够实现高存储密度的每个单元的多个位，包括沿着一个方向彼此平行延伸的多个第一栅电极和沿着一个方向延伸的多个第二栅电极与基板表面上的第一和第二电极以矩阵状图案划分的多个部分中的每一个上设置扩散区域的第一栅电极相交的方向。其中一个划分的四个侧面由两个相邻的第一栅电极和两个相邻的第二栅电极限定，具有四个独立可访问的位，并且通过在分割中的扩散区的接触（CT）连接。通过接触将多个互连件连接到位于上述对角线的延伸线上的多个矩阵状部分中的其它部分的扩散区域。多个上述互连布置成相对于第一和第二电极的格子在倾斜方向上在存储单元阵列中彼此平行地延伸。

2. 发明申请

US20050230748A1 Semiconductor memory device and manufacturing method therefor 有权
公开(公告)号：US20050230748A1
公开(公告)日：2005-10-20
申请号：US11155849
申请日：2005-06-17
申请人： Kenji Saito , Hiroshi Furuta
发明人： Kenji Saito , Hiroshi Furuta
IPC分类号： H01L21/8247 , G11C16/04 , H01L21/8246 , H01L27/115 , H01L29/788 , H01L29/792 , H01L29/76
CPC分类号： H01L27/11568 , G11C16/0475 , H01L27/115 , Y10S257/90 , Y10S257/909
摘要： A semiconductor memory device, adapted for storing plural bits per cell to be able to accomplish high storage density by a simplified structure, includes a plurality of first gate electrodes extending parallel to one another along one direction and a plurality of second gate electrodes extending in a direction of intersecting the first gate electrodes, in which a diffusion region is provided on each of a plurality of divisions demarcated in a matrix-like pattern by first and second electrodes on a substrate surface. One of the divisions, the four sides of which are defined by two neighboring first gate electrodes and two neighboring second gate electrodes, has four independently accessible bits, and is connected by a contact (CT) with a diffusion region in the division. There are provided a plurality of interconnections connected via contacts to the diffusion regions of other divisions in the plural matrix-like divisions lying on the line of extension of the aforementioned diagonal line. A plurality of the aforementioned interconnections are arranged for extending parallel to one another in the memory cell array in an oblique direction relative to the lattice of the first and second electrodes.

3. 发明授权

US07202150B2 Semiconductor memory device and manufacturing method therefor 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07202150B2
公开(公告)日：2007-04-10
申请号：US11155849
申请日：2005-06-17
申请人： Kenji Saito , Hiroshi Furuta
发明人： Kenji Saito , Hiroshi Furuta
IPC分类号： H01L21/3205
CPC分类号： H01L27/11568 , G11C16/0475 , H01L27/115 , Y10S257/90 , Y10S257/909
摘要： A semiconductor memory device, adapted for storing plural bits per cell to be able to accomplish high storage density by a simplified structure, includes a plurality of first gate electrodes extending parallel to one another along one direction and a plurality of second gate electrodes extending in a direction of intersecting the first gate electrodes, in which a diffusion region is provided on each of a plurality of divisions demarcated in a matrix-like pattern by first and second electrodes on a substrate surface. One of the divisions, the four sides of which are defined by two neighboring first gate electrodes and two neighboring second gate electrodes, has four independently accessible bits, and is connected by a contact (CT) with a diffusion region in the division. There are provided a plurality of interconnections connected via contacts to the diffusion regions of other divisions in the plural matrix-like divisions lying on the line of extension of the aforementioned diagonal line. A plurality of the aforementioned interconnections are arranged for extending parallel to one another in the memory cell array in an oblique direction relative to the lattice of the first and second electrodes.
摘要翻译：一种半导体存储器件，适用于通过简化的结构存储能够实现高存储密度的每个单元的多个位，包括沿着一个方向彼此平行延伸的多个第一栅电极和沿着一个方向延伸的多个第二栅电极与基板表面上的第一和第二电极以矩阵状图案划分的多个部分中的每一个上设置扩散区域的第一栅电极相交的方向。其中一个划分的四个侧面由两个相邻的第一栅电极和两个相邻的第二栅电极限定，具有四个独立可访问的位，并且通过在分割中的扩散区的接触（CT）连接。通过接触将多个互连件连接到位于上述对角线的延伸线上的多个矩阵状部分中的其它部分的扩散区域。多个上述互连布置成相对于第一和第二电极的格子在倾斜方向上在存储单元阵列中彼此平行地延伸。

4. 发明授权

US09046059B2 Electric vehicle and fault detection method for exhaust gas recirculation system of internal combustion engine 有权
标题翻译：内燃机废气再循环系统的电动汽车和故障检测方法
公开(公告)号：US09046059B2
公开(公告)日：2015-06-02
申请号：US13618101
申请日：2012-09-14
申请人： Katsuhiro Furuta , Hideo Matsunaga , Hitoshi Kamura , Kenji Saito
发明人： Katsuhiro Furuta , Hideo Matsunaga , Hitoshi Kamura , Kenji Saito
IPC分类号： F02D41/22 , F02M25/07 , B60W20/00 , F02D41/00 , B60K6/442 , B60K6/52 , B60W10/06 , F02D41/02
CPC分类号： F02M25/0702 , B60K6/442 , B60K6/52 , B60W10/06 , B60W20/00 , B60W20/50 , B60W2510/0604 , B60W2510/0671 , B60Y2400/442 , F02D41/0055 , F02D41/022 , F02D2200/0406 , F02M26/49 , Y02T10/47 , Y02T10/6234 , Y02T10/6265
摘要： An electric vehicle includes engine in which the amount of fuel supply is controlled by a throttle, a generator that produces electricity using the power of the engine, a motor outputs power to a drive shaft, an EGR system that supplies gas, exhausted from the engine, to a manifold of the engine, a clutch that switches between the transmission and the non-transmission of power from the engine to the drive shaft, a sensor that measures the change of a pressure of the manifold before and after the EGR system supplies the gas to the manifold, and ECU that performs fault detection of the EGR system using the sensor when conditions, where a series mode is selected, the degree of opening of the throttle is constant, are satisfied.
摘要翻译：电动车辆包括其中通过节气门控制燃料供给量的发动机，使用发动机的动力产生电的发电机，电动机向驱动轴输出动力，从发动机排出的EGR的EGR系统到发动机的歧管，离合器，其在变速器和从发动机到驱动轴的不传动动力之间切换;传感器，其测量在EGR系统供给前后的歧管的压力变化满足歧管的气体和在选择串联模式的情况下，节气门的开度恒定的条件下，使用传感器进行EGR系统的故障检测的ECU。

5. 发明授权

US08597439B2 High-strength cold rolled steel sheet having excellent formability, and plated steel sheet 有权
标题翻译：优异的成形性的高强度冷轧钢板，镀钢板
公开(公告)号：US08597439B2
公开(公告)日：2013-12-03
申请号：US12640229
申请日：2009-12-17
申请人： Shushi Ikeda , Yoichi Mukai , Hiroshi Akamizu , Koichi Makii , Koichi Sugimoto , Shunichi Hashimoto , Kenji Saito
发明人： Shushi Ikeda , Yoichi Mukai , Hiroshi Akamizu , Koichi Makii , Koichi Sugimoto , Shunichi Hashimoto , Kenji Saito
IPC分类号： C22C38/12
CPC分类号： C22C38/02 , C22C38/04 , C22C38/12
摘要： A high-strength cold rolled steel sheet contains:0.10 to 0.28% of C,1.0 to 2.0% of Si,1.0 to 3.0% of Mn, and0.03 to 0.10% of Nb in terms of % by mass,Al is controlled to 0.5 or less, P is controlled to 0.15% or less, and S is controlled to 0.02% or less, and residual austenite accounts for 5 to 20%, bainitic ferrite accounts for 50% or more, and polygonal ferrite accounts for 30% or less (containing 0%), of the entire structure, and a mean number of residual austenite blocks is 20 or more as determined when the random area (15 μm×15 μm) is observed by EBSP (electron back scatter diffraction pattern).
摘要翻译：高强度冷轧钢板包含：以质量％计，C：0.10〜0.28％，Si：1.0〜2.0％，Mn：1.0〜3.0％，Nb：0.03〜0.10％，Al：以下，P为0.15％以下，S为0.02％以下，残留奥氏体为5〜20％，贝氏体铁素体为50％以上，多边形铁素体为30％以下（含有0％），并且当通过EBSP（电子背散射衍射图）观察到随机面积（15mum×15mum））时，残留奥氏体块的平均数为20以上。

6. 发明授权

US08564941B2 Electronic apparatus 失效
标题翻译：电子仪器
公开(公告)号：US08564941B2
公开(公告)日：2013-10-22
申请号：US12827088
申请日：2010-06-30
申请人： Manabu Watabe , Kenji Saito
发明人： Manabu Watabe , Kenji Saito
IPC分类号： H05K5/00 , H05K7/00 , G06F1/16
CPC分类号： G06F1/1616
摘要： An electronic apparatus includes a keyboard unit, a first circuit board, and a first electronic component. The keyboard unit includes a plate that includes a front surface and a bottom surface facing each other and a first coupling portion protruding from the bottom surface, and a plurality of keys provided on the front surface side of the plate. The first circuit board is provided to face the bottom surface via the first coupling portion and includes a second coupling portion to be coupled with the first coupling portion and a first front surface as a surface on a side that faces the bottom surface. The first electronic component is mounted on the first front surface of the first circuit board.
摘要翻译：电子设备包括键盘单元，第一电路板和第一电子元件。键盘单元包括：板，其包括彼此面对的前表面和底表面;以及从底表面突出的第一联接部分和设置在板的前表面侧上的多个键。第一电路板经由第一联接部分设置为面对底面，并且包括与第一联接部分联接的第二联接部分和作为面向底面的一侧上的表面的第一前表面。第一电子部件安装在第一电路板的第一前表面上。

7. 发明授权

US08517795B2 Surface treatment method for vacuum member 有权
标题翻译：真空部件的表面处理方法
公开(公告)号：US08517795B2
公开(公告)日：2013-08-27
申请号：US10532586
申请日：2003-10-31
申请人： Kenji Saito , Tamao Higuchi
发明人： Kenji Saito , Tamao Higuchi
IPC分类号： B24B49/08
CPC分类号： C23F3/06 , B24B1/00 , B24B31/0218 , C23F3/03 , C25F3/16
摘要： A surface-treating process and a forming process in which an inner surface of a vacuum member is mechanically polished in the presence of a liquid medium including no hydrogen atom.
摘要翻译：在不含氢原子的液体介质的存在下，对真空部件的内表面进行机械研磨的表面处理工序和成形工序。

8. 发明授权

US08415502B2 Method and apparatus for producing mono-lower-alkyl monoalkanolamine 有权
标题翻译：单低级烷基单链烷醇胺的制备方法和装置
公开(公告)号：US08415502B2
公开(公告)日：2013-04-09
申请号：US12994599
申请日：2008-10-24
申请人： Tatsuya Tsujiuchi , Shinya Tachibana , Tsuyoshi Oishi , Tomio Mimura , Yasuyuki Yagi , Hidehisa Mita , Ryosuke Araki , Kenji Saito
发明人： Tatsuya Tsujiuchi , Shinya Tachibana , Tsuyoshi Oishi , Tomio Mimura , Yasuyuki Yagi , Hidehisa Mita , Ryosuke Araki , Kenji Saito
IPC分类号： C07C213/04
CPC分类号： C07C213/10 , C07C213/04 , C07C215/08
摘要： A reaction column (12) to which a raw material mixture (11) containing a mono-lower-alkylamine (AA: raw material I) and an alkylene oxide (AO: raw material II) is supplied, an unreacted raw material distillation column (14) that separates an unreacted raw material (15) from a reaction product (13a) (containing the unreacted raw material (15), a target reaction product (monomer) (17), and a by-product (dimer) (18)), and a flash drum (16) to which a reaction product (13b) (containing the target reaction product (monomer) (17) and the by-product (dimer) (18)) is supplied, the flash drum (16) separating a mono-lower-alkyl monoalkanolamine (monomer, the target reaction product 17) in a gas state, are provided.
摘要翻译：将供给含有单低级烷基胺（AA：原料I）和环氧烷（AO：原料II））的原料混合物（11）的反应塔（12），未反应原料蒸馏塔 14），将未反应的原料（15）与反应产物（13a）（含有未反应的原料（15）），目标反应产物（单体）（17）和副产物（二聚体）（18）分离，）和提供有反应产物（13b）（含有目标反应产物（单体）（17）和副产物（二聚体）（18））的闪蒸筒），闪蒸鼓（16）分离出气态下的单低级烷基单烷醇胺（单体，目标反应产物17）。

9. 发明授权

US08323880B2 Positive resist processing liquid composition and liquid developer 失效
标题翻译：正抗蚀剂处理液体组合物和液体显影剂
公开(公告)号：US08323880B2
公开(公告)日：2012-12-04
申请号：US12310054
申请日：2007-08-10
申请人： Yutaka Murakami , Norio Ishikawa , Taku Murata , Kenji Saito , Ryosuke Araki
发明人： Yutaka Murakami , Norio Ishikawa , Taku Murata , Kenji Saito , Ryosuke Araki
IPC分类号： G03F7/26
CPC分类号： G03F7/322
摘要： Disclosed is a positive resist processing liquid composition which is composed of an aqueous solution containing a quaternary ammonium hydroxide represented by the following general formula (I). In the formula, R1 and R3 independently represent a methyl group, and R2 represents an alkyl group having 12-18 carbon atoms.
摘要翻译：公开了由含有由以下通式（I）表示的季铵氢氧化物的水溶液组成的正性抗蚀剂处理液体组合物。在该式中，R 1和R 3独立地表示甲基，R 2表示具有12-18个碳原子的烷基。

10. 发明申请

US20110130294A1 METHOD OF MANUFACTURING SUPERCONDUCTING RADIO-FREQUENCY ACCELERATION CAVITY 有权
标题翻译：制造超导频率加速炉的方法
公开(公告)号：US20110130294A1
公开(公告)日：2011-06-02
申请号：US12737651
申请日：2009-06-24
申请人： Kenji Saito , Koichi Takeuchi , Hiroshi Yamazaki
发明人： Kenji Saito , Koichi Takeuchi , Hiroshi Yamazaki
IPC分类号： H01L39/24
CPC分类号： H05H7/20 , B21D22/20 , B21D35/005 , C22B34/24 , C22C27/00 , Y10T29/49014
摘要： To provide a manufacturing method of a superconducting radio-frequency acceleration cavity used in a charged particle accelerator enabling the manufacturing with few waste amounts of the niobium material at low cost in a short time, the manufacturing method has each of the steps of (a) obtaining an ingot made from a disk-shaped niobium material, (b) slicing and cutting the niobium ingot into a plurality of niobium plates each with a predetermined thickness, by vibrating multiple wires back and forth while spraying fine floating abrasive grains with the niobium ingot supported, (c) removing the floating abrasive grains adhered to the sliced niobium plates, and (d) performing deep draw forming on the niobium plates and thereby obtaining a niobium cell of a desired shape.
摘要翻译：为了提供一种用于带电粒子加速器的超导射频加速腔的制造方法，其能够在短时间内以低成本制造少量的铌材料，所以制造方法具有以下步骤：（a）获得由圆盘形铌材料制成的铸锭，（b）通过在铌锭中喷洒细的浮动磨料颗粒来回振动多根钢丝，将铌锭切割并切割成多个具有预定厚度的铌板（c）除去附着在切片的铌板上的浮动磨粒，（d）在铌板上进行深冲压成形，得到所需形状的铌电池。

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