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1. 发明授权

US07582394B2 Photomask and method for forming pattern 有权
标题翻译：光掩模和形成图案的方法
公开(公告)号：US07582394B2
公开(公告)日：2009-09-01
申请号：US10957599
申请日：2004-10-05
申请人： Kenji Noda , Shin Hashimoto
发明人： Kenji Noda , Shin Hashimoto
IPC分类号： G03F1/00 , H01L21/00
CPC分类号： G03F1/36
摘要： A photomask includes, on a translucent substrate, three or more first light-shielding portions each in insular shape having a property of shielding exposure light and spaced equidistantly, a second light-shielding portion having a property of shielding the exposure light and formed to connect the adjacent first light-shielding portions, and first light-transmitting portions each in slit shape having a property of transmitting the exposure light and formed to be surrounded with the first and second light-shielding portions. The second light-shielding portion is formed to contain a point located equidistantly from the three or more first light-shielding portions.
摘要翻译：一种光掩模在透光性基板上具有三个以上的具有隔离曝光光等间隔的特性的具有岛状的三个以上的第一遮光部，具有屏蔽曝光光的特性的第二遮光部，形成为连接相邻的第一遮光部和具有透射曝光光的特性的狭缝状的第一透光部，形成为被第一和第二遮光部包围。第二遮光部形成为包含与三个以上的第一遮光部等距离地设置的点。

2. 发明申请

US20050074682A1 Photomask and method for forming pattern 有权
标题翻译：光掩模和形成图案的方法
公开(公告)号：US20050074682A1
公开(公告)日：2005-04-07
申请号：US10957599
申请日：2004-10-05
申请人： Kenji Noda , Shin Hashimoto
发明人： Kenji Noda , Shin Hashimoto
IPC分类号： G03F7/00 , G03C5/00 , G03F1/08 , G03F1/14 , G03F7/20
CPC分类号： G03F1/36
摘要： A photomask includes, on a translucent substrate, three or more first light-shielding portions each in insular shape having a property of shielding exposure light and spaced equidistantly, a second light-shielding portion having a property of shielding the exposure light and formed to connect the adjacent first light-shielding portions, and first light-transmitting portions each in slit shape having a property of transmitting the exposure light and formed to be surrounded with the first and second light-shielding portions. The second light-shielding portion is formed to contain a point located equidistantly from the three or more first light-shielding portions.
摘要翻译：一种光掩模在透光性基板上具有三个以上的具有隔离曝光光等间隔的特性的具有岛状的三个以上的第一遮光部，具有屏蔽曝光光的特性的第二遮光部，形成为连接相邻的第一遮光部和具有透射曝光光的特性的狭缝状的第一透光部，形成为被第一和第二遮光部包围。第二遮光部形成为包含与三个以上的第一遮光部等距离地设置的点。

3. 发明授权

US08679955B2 Method for forming epitaxial wafer and method for fabricating semiconductor device 有权
标题翻译：用于形成外延晶片的方法和用于制造半导体器件的方法
公开(公告)号：US08679955B2
公开(公告)日：2014-03-25
申请号：US13202419
申请日：2010-02-10
申请人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Hideaki Nakahata , Shinsuke Fujiwara
发明人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Hideaki Nakahata , Shinsuke Fujiwara
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/16 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/007
摘要： A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S107, an AlN buffer layer 13 is grown. In step S108, at a time t5, a source gas G1 containing hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactor 10 to grow the AlN buffer layer 13 on a primary surface 11a. The AlN buffer layer 13 is so called a low-temperature buffer layer. After a start of film formation of the buffer layer 13, in step S109 supply of hydrogen (H2) is started at a time t6. At the time t6, H2, N2, TMA, and NH3 are supplied into the growth reactor 10. A supply amount of hydrogen is increased between times t6 and t7, and at the time t7 the increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t7, H2, TMA, and NH3 are supplied into the growth reactor 10.
摘要翻译：提供了一种用于形成外延晶片的方法，其可以在氧化镓区域上使得能够以良好的晶体质量生长氮化镓基半导体。在步骤S107中，生长AlN缓冲层13。在步骤S108中，在时刻t5，将除了氮以外的氢，三甲基铝和氨的原料气G1供给到生长反应器10中，以在主面11a上生长AlN缓冲层13。 AlN缓冲层13被称为低温缓冲层。在开始形成缓冲层13之后，在步骤S109中，在时刻t6开始供给氢（H2）。在时间t6，H2，N2，TMA和NH3被供应到生长反应器10中。在时间t6和t7之间，氢的供应量增加，而在时间t7，氢的增加被终止以提供恒定的量的氢。在时间t7，将H2，TMA和NH3供应到生长反应器10中。

4. 发明授权

US08633514B2 Group III nitride semiconductor wafer and group III nitride semiconductor device 有权
标题翻译： III族氮化物半导体晶片和III族氮化物半导体器件
公开(公告)号：US08633514B2
公开(公告)日：2014-01-21
申请号：US13409798
申请日：2012-03-01
申请人： Shin Hashimoto , Tatsuya Tanabe , Katsushi Akita , Hideaki Nakahata , Hiroshi Amano
发明人： Shin Hashimoto , Tatsuya Tanabe , Katsushi Akita , Hideaki Nakahata , Hiroshi Amano
IPC分类号： H01L29/66
CPC分类号： H01L29/7787 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02661 , H01L29/2003 , H01L29/66212 , H01L29/66462 , H01L29/872
摘要： A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current characteristics. The group III nitride semiconductor wafer is used to make the group III nitride semiconductor device. The group III nitride semiconductor wafer comprises a substrate made of AlXGa1-XN (0
摘要翻译：提供III族氮化物半导体器件和III族氮化物半导体晶片。 III族氮化物半导体器件具有包含含有Al的III族氮化物基半导体的沟道层。 III族氮化物半导体器件可以增强二维电子气的迁移率并改善电流特性。 III族氮化物半导体晶片用于制造III族氮化物半导体器件。 III族氮化物半导体晶片包括由AlXGa1-XN（0

5. 发明申请

US20120211801A1 GROUP III NITRIDE LAMINATED SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：第III组氮化物层叠半导体晶体管和III族氮化物半导体器件
公开(公告)号：US20120211801A1
公开(公告)日：2012-08-23
申请号：US13392998
申请日：2010-08-23
申请人： Shin Hashimoto , Katsushi Akita , Hideaki Nakahata , Hiroshi Amano
发明人： Shin Hashimoto , Katsushi Akita , Hideaki Nakahata , Hiroshi Amano
IPC分类号： H01L29/778 , H01L29/205
CPC分类号： H01L29/7785 , H01L29/2003
摘要： There is provided a normally-off group III nitride semiconductor device having a high breakdown field strength and minimal crystal defects, and a group III nitride laminated semiconductor wafer used to make the group III nitride semiconductor device. The group III nitride laminated semiconductor wafer 10 includes a substrate 27 which is made of AlN and has a main surface 27a along the c-axis of the AlN crystal, a first AlX1InY1Ga1-X1-Y1N layer 13 which is made of a group III nitride-based semiconductor containing Al and is provided on the main surface 27a, and a second AlX2InY2Ga1-X2-Y2N layer 15 which is provided on the main surface 27a, is made of a group III nitride-based semiconductor having a larger bandgap than the first AlX1InY1Ga1-X1-Y1N layer 13, and forms a heterojunction with the first AlX1InY1Ga1-X1-Y1N layer 13.
摘要翻译：提供了具有高击穿场强度和最小晶体缺陷的常规III族氮化物半导体器件，以及用于制造III族氮化物半导体器件的III族氮化物层压半导体晶片。 III族氮化物层叠半导体晶片10包括由AlN制成并具有沿AlN晶体的c轴的主表面27a的基板27，由III族氮化物制成的第一AlX1InY1Ga1-X1-Y1N层13 包含Al并且设置在主表面27a上，并且设置在主表面27a上的第二AlX2InY2Ga1-X2-Y2N层15由具有比第一个更大的带隙的III族氮化物基半导体制成 AlX1InY1Ga1-X1-Y1N层13，与第一AlX1InY1Ga1-X1-Y1N层13形成异质结。

6. 发明申请

US20120070929A1 METHOD FOR FABRICATING WAFER PRODUCT AND METHOD FOR FABRICATING GALLIUM NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE 有权
标题翻译：用于制造波形产品的方法和用于制造基于氮化镓的半导体光学器件的方法
公开(公告)号：US20120070929A1
公开(公告)日：2012-03-22
申请号：US13318039
申请日：2010-03-01
申请人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： H01L33/36 , H01L21/20
CPC分类号： C23C16/0227 , C23C16/0272 , C23C16/303 , C30B25/183 , C30B29/406 , H01L33/007
摘要： Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S105, a buffer layer 13 comprised of a Group III nitride such as GaN, AlGaN, or AlN is grown at 600 Celsius degrees on a primary surface 11a of a gallium oxide substrate 11. After the growth of the buffer layer 13, while supplying a gas G2, which contains hydrogen and nitrogen, into a growth reactor 10, the gallium oxide substrate 11 and the buffer layer 13 are exposed to an atmosphere in the growth reactor 11 at 1050 Celsius degrees. A Group III nitride semiconductor layer 15 is grown on the modified buffer layer. The modified buffer layer includes, for example, voids. The Group III nitride semiconductor layer 15 can be comprised of GaN and AlGaN. When the Group III nitride semiconductor layer 15 is formed of these materials, excellent crystal quality is obtained on the modified buffer layer 14.
摘要翻译：本发明提供一种制造晶片产品的方法，该晶片产品包括在氧化镓衬底上生长的有源层并且能够提高发光强度。在步骤S105中，在氧化镓衬底11的主表面11a上以600摄氏度生长由诸如GaN，AlGaN或AlN的III族氮化物构成的缓冲层13.在缓冲层13生长之后，同时将含有氢和氮的气体G2供给到生长反应器10中，将氧化镓衬底11和缓冲层13在生长反应器11中的气氛中以1050摄氏度暴露。在改性缓冲层上生长III族氮化物半导体层15。改性缓冲层包括例如空隙。 III族氮化物半导体层15可以由GaN和AlGaN构成。当由这些材料形成III族氮化物半导体层15时，在改性缓冲层14上获得优异的晶体质量。

7. 发明授权

US07943964B2 AlxGayIn1−x−yN crystal substrate, semiconductor device, and method of manufacturing the same 有权
标题翻译： AlxGayIn1-x-yN晶体基板，半导体器件及其制造方法
公开(公告)号：US07943964B2
公开(公告)日：2011-05-17
申请号：US12096986
申请日：2006-10-16
申请人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
发明人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
IPC分类号： H01L33/30
CPC分类号： H01L21/02658 , C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/0254
摘要： An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm−2 and at most 1×106 cm−2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.
摘要翻译：本发明的Al x Ga y In 1-x-y N晶体基板具有面积为至少10cm 2的主平面。主平面具有位于与主平面的外周5mm以内的外部区域和与外部区域以外的区域对应的内部区域。内部区域的总位错密度为1×102cm 2以上且1×10 6 cm -2以下。由此，可以提供具有大尺寸和合适的位错密度的Al x Ga y In 1-x-y N晶体基板，用作半导体器件的基板，包括Al x Ga y In 1-x-y N晶体基板的半导体器件，以及制造相同。

8. 发明授权

US07884393B2 High electron mobility transistor, field-effect transistor, and epitaxial substrate 有权
标题翻译：高电子迁移率晶体管，场效应晶体管和外延衬底
公开(公告)号：US07884393B2
公开(公告)日：2011-02-08
申请号：US12786440
申请日：2010-05-25
申请人： Shin Hashimoto , Makoto Kiyama , Takashi Sakurada , Tatsuya Tanabe , Kouhei Miura , Tomihito Miyazaki
发明人： Shin Hashimoto , Makoto Kiyama , Takashi Sakurada , Tatsuya Tanabe , Kouhei Miura , Tomihito Miyazaki
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L29/2003 , H01L29/66462
摘要： Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor (11) is provided with a supporting substrate (13) composed of gallium nitride, a buffer layer (15) composed of a first gallium nitride semiconductor, a channel layer (17) composed of a second gallium nitride semiconductor, a semiconductor layer (19) composed of a third gallium nitride semiconductor, and electrode structures (a gate electrode (21), a source electrode (23) and a drain electrode (25) for the transistor (11). The band gap of the third gallium nitride semiconductor is broader than that of the second gallium nitride semiconductor. The carbon concentration NC1 of the first gallium nitride semiconductor is 4×1017 cm−3 or more. The carbon concentration NC2 of the second gallium nitride semiconductor is less than 4×1016 cm−3.
摘要翻译：提供具有高纯度沟道层和高电阻缓冲层的高电子迁移率晶体管。高电子迁移率晶体管（11）设置有由氮化镓构成的支撑基板（13），由第一氮化镓半导体构成的缓冲层（15），由第二氮化镓半导体构成的沟道层（17）由第三氮化镓半导体构成的半导体层（19）和用于晶体管（11）的电极结构（栅电极（21），源电极（23）和漏电极（25）），带隙第三氮化镓半导体的第二氮化镓半导体的碳浓度NC2比第二氮化镓半导体的碳浓度小于4×10 17 cm -3以上， 1016厘米-3。

9. 发明授权

US07749828B2 Method of manufacturing group III Nitride Transistor 有权
标题翻译：制造III族氮化物晶体管的方法
公开(公告)号：US07749828B2
公开(公告)日：2010-07-06
申请号：US11571156
申请日：2006-03-03
申请人： Shin Hashimoto , Makoto Kiyama , Takashi Sakurada , Tatsuya Tanabe , Kouhei Miura , Tomihito Miyazaki
发明人： Shin Hashimoto , Makoto Kiyama , Takashi Sakurada , Tatsuya Tanabe , Kouhei Miura , Tomihito Miyazaki
IPC分类号： H01L21/338
CPC分类号： H01L29/7787 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L29/2003 , H01L29/66462
摘要： Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor 11 is provided with a supporting substrate 13 composed of gallium nitride, a buffer layer 15 composed of a first gallium nitride semiconductor, a channel layer 17 composed of a second gallium nitride semiconductor, a semiconductor layer 19 composed of a third gallium nitride semiconductor, and electrode structures (a gate electrode 21, a source electrode 23 and a drain electrode 25) for the transistor 11. The band gap of the third gallium nitride semiconductor is broader than that of the second gallium nitride semiconductor. The carbon concentration NC1 of the first gallium nitride semiconductor is 4×1017 cm−3 or more. The carbon concentration NC2 of the second gallium nitride semiconductor is less than 4×1016 cm−3.
摘要翻译：提供具有高纯度沟道层和高电阻缓冲层的高电子迁移率晶体管。高电子迁移率晶体管11设置有由氮化镓构成的支撑基板13，由第一氮化镓半导体构成的缓冲层15，由第二氮化镓半导体构成的沟道层17，由第三氮化镓半导体构成的半导体层19 氮化镓半导体，以及用于晶体管11的电极结构（栅电极21，源电极23和漏电极25）。第三氮化镓半导体的带隙比第二氮化镓半导体的带隙宽。第一氮化镓半导体的碳浓度NC1为4×1017cm-3以上。第二氮化镓半导体的碳浓度NC2小于4×1016cm-3。

10. 发明申请

US20060199480A1 Apparatus and method for feeding slurry 失效
公开(公告)号：US20060199480A1
公开(公告)日：2006-09-07
申请号：US11406459
申请日：2006-04-19
申请人： Akihiro Tanoue , Yoshiharu Hidaka , Shin Hashimoto
发明人： Akihiro Tanoue , Yoshiharu Hidaka , Shin Hashimoto
IPC分类号： B24B7/00
CPC分类号： B24B37/04 , B24B57/02
摘要： A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.

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