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1. 发明授权

US08715032B2 Spinner for toy top 有权
标题翻译：旋转器玩具顶
公开(公告)号：US08715032B2
公开(公告)日：2014-05-06
申请号：US13184145
申请日：2011-07-15
申请人： Kenji Horikoshi , Takeaki Maeda
发明人： Kenji Horikoshi , Takeaki Maeda
IPC分类号： A63H1/00
CPC分类号： A63H1/12
摘要： A spinner for a toy top enables a launching position of a toy top to be easily set and held in place even when a rack belt is vigorously pulled out. The spinner includes an elongated rack belt having a rack gear, and a spinner main body formed with an insertion hole through which the rack belt is inserted. The spinner main body includes a toy top mounting part rotatably provided on one surface thereof. Inside the spinner main body, a rotating mechanism that is actuated by pulling out the rack belt to impart a rotational force to the toy top mounting part is provided. The rack belt can be inserted into and pulled out from the insertion hole in a same direction as an axis of rotation of the toy top mounting part.
摘要翻译：用于玩具顶部的旋转器使得玩具顶部的发射位置即使在大力拉出齿条皮带时也能够容易地固定并保持就位。旋转器包括具有齿条的细长齿条带和形成有插入孔的旋转主体，通过该插入孔插入齿条带。旋转器主体包括可旋转地设置在其一个表面上的玩具顶部安装部。在旋转器主体的内部，设置有通过拉出齿条带以向玩具顶部安装部赋予旋转力而被致动的旋转机构。齿条带可以沿与玩具顶部安装部的旋转轴线相同的方向从插入孔插入和拉出。

2. 发明申请

US20110306269A1 SPINNER FOR TOY TOP 有权
标题翻译：旋转刀为玩具顶
公开(公告)号：US20110306269A1
公开(公告)日：2011-12-15
申请号：US13184145
申请日：2011-07-15
申请人： Kenji Horikoshi , Takeaki Maeda
发明人： Kenji Horikoshi , Takeaki Maeda
IPC分类号： A63H1/08
CPC分类号： A63H1/12
摘要： A spinner for a toy top enables a launching position of a toy top to be easily set and held in place even when a rack belt is vigorously pulled out. The spinner includes an elongated rack belt having a rack gear, and a spinner main body formed with an insertion hole through which the rack belt is inserted. The spinner main body includes a toy top mounting part rotatably provided on one surface thereof. Inside the spinner main body, a rotating mechanism that is actuated by pulling out the rack belt to impart a rotational force to the toy top mounting part is provided. The rack belt can be inserted into and pulled out from the insertion hole in a same direction an axis of rotation of the toy top mounting part.
摘要翻译：用于玩具顶部的旋转器使得玩具顶部的发射位置即使在大力拉出齿条皮带时也能够容易地固定并保持就位。旋转器包括具有齿条的细长齿条带和形成有插入孔的旋转主体，通过该插入孔插入齿条带。旋转器主体包括可旋转地设置在其一个表面上的玩具顶部安装部。在旋转器主体的内部，设置有通过拉出齿条带以向玩具顶部安装部赋予旋转力而被致动的旋转机构。齿条皮带可以插入到插入孔中并沿与玩具顶部安装部分的旋转轴线相同的方向从其中拉出。

3. 发明申请

US20140319512A1 THIN-FILM TRANSISTOR STRUCTURE, AS WELL AS THIN-FILM TRANSISTOR AND DISPLAY DEVICE EACH HAVING SAID STRUCTURE 有权
标题翻译：薄膜晶体管结构，如薄膜晶体管和每个具有结构的显示器件
公开(公告)号：US20140319512A1
公开(公告)日：2014-10-30
申请号：US14113322
申请日：2012-04-19
申请人： Takeaki Maeda , Toshihiro Kugimiya , Jun Ho Song , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
发明人： Takeaki Maeda , Toshihiro Kugimiya , Jun Ho Song , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , G02F1/1368 , H01L27/1222 , H01L29/78693
摘要： There is provided an oxide semiconductor layer capable of making stable the electric characteristics of a thin-film transistor without requiring an oxidatively-treated layer when depositing a passivation layer or the like in display devices such as organic EL displays and liquid crystal displays. The thin-film transistor structure of the present invention at least having, on a substrate, an oxide semiconductor layer, a source-drain electrode, and a passivation layer in order from the substrate side, wherein the oxide semiconductor layer is a stacked product of a first oxide semiconductor layer and a second oxide semiconductor layer; the first oxide semiconductor layer has a Zn content of 50 atomic % or more as a percentage of all metal elements contained therein, and the first oxide semiconductor layer is formed on the source-drain electrode and passivation layer side; the second oxide semiconductor layer contains Sn and at least one element selected from the group consisting of In, Ga, and Zn, and the second oxide semiconductor layer is formed on the substrate side; and the first oxide semiconductor layer is in direct contact both with the source-drain electrode and with the passivation layer.
摘要翻译：提供了一种氧化物半导体层，当在有机EL显示器和液晶显示器等显示装置中沉积钝化层等时，能够使薄膜晶体管的电特性稳定，而不需要氧化处理层。本发明的薄膜晶体管结构至少在衬底上具有氧化物半导体层，源 - 漏电极和钝化层，从衬底侧开始，其中氧化物半导体层是第一氧化物半导体层和第二氧化物半导体层; 第一氧化物半导体层的Zn含量占所有金属元素的百分比为50原子％以上，第一氧化物半导体层形成在源 - 漏电极和钝化层侧; 所述第二氧化物半导体层含有Sn和选自In，Ga和Zn中的至少一种元素，并且所述第二氧化物半导体层形成在所述基板侧; 并且第一氧化物半导体层与源 - 漏电极和钝化层直接接触。

4. 发明申请

US20140151886A1 SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：半导体元件和制造半导体元件的方法
公开(公告)号：US20140151886A1
公开(公告)日：2014-06-05
申请号：US14233388
申请日：2012-07-19
申请人： Takeaki Maeda , Hiroyuki Okuno , Yoshihiro Yokota
发明人： Takeaki Maeda , Hiroyuki Okuno , Yoshihiro Yokota
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53223 , H01L21/28525 , H01L21/2855 , H01L21/28556 , H01L21/76841 , H01L21/76867 , H01L29/161 , H01L29/165 , H01L29/401 , H01L29/456 , H01L29/7395 , H01L29/7802 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor element in which atomic interdiffusion between a semiconductor region and an electrode is suppressed and increase in the contact resistance is suppressed even in cases where the semiconductor element is exposed to high temperatures during the production processes or the like. A semiconductor element of the present invention is provided with: a semiconductor region that contains silicon; an electrode that contains aluminum; and a diffusion barrier layer that is interposed between the semiconductor region and the electrode and contains germanium. The germanium content in at least a part of the diffusion barrier layer is 4 at % or more.
摘要翻译：提供了一种半导体元件，其中半导体区域和电极之间的原子相互扩散被抑制，并且即使在半导体元件在制造工艺等期间暴露于高温的情况下，接触电阻也增加。本发明的半导体元件具有：含有硅的半导体区域; 含铝的电极; 以及插入在所述半导体区域和所述电极之间并且包含锗的扩散阻挡层。扩散阻挡层的至少一部分中的锗含量为4原子％以上。

5. 发明申请

US20070004313A1 Marble incorporating iron core 审中-公开
标题翻译：大理石结合铁芯
公开(公告)号：US20070004313A1
公开(公告)日：2007-01-04
申请号：US11216035
申请日：2005-09-01
申请人： Takeaki Maeda
发明人： Takeaki Maeda
IPC分类号： A63H29/08
CPC分类号： A63F7/40 , A63F2007/405
摘要： [Object] It is an object of the present invention to provide a marble having higher impact resistance than that of a marble of glass conventionally known, capable of being played by using a magnet and easily enhancing decorative properties. [Means for Settlement] A marble incorporating an iron core of a round ball is composed by covering the entire outer surface of an iron core with a jacket made of a synthetic resin.
摘要翻译：本发明的目的是提供一种具有比通常已知的玻璃大理石具有更高抗冲击性的大理石，其能够通过使用磁体进行播放并且容易地提高装饰性能。 [沉降装置]包含圆球的铁芯的大理石是用合成树脂制的外壳覆盖铁芯的整个外表面而构成的。

6. 发明申请

US20120126227A1 INTERCONNECTION STRUCTURE AND DISPLAY DEVICE INCLUDING INTERCONNECTION STRUCTURE 有权
标题翻译：包括互连结构的互连结构和显示设备
公开(公告)号：US20120126227A1
公开(公告)日：2012-05-24
申请号：US13387557
申请日：2010-07-27
申请人： Takeaki Maeda , Hiroshi Goto , Yumi Iwanari , Takayuki Hirano
发明人： Takeaki Maeda , Hiroshi Goto , Yumi Iwanari , Takayuki Hirano
IPC分类号： H01L29/12
CPC分类号： H01L29/7869 , G02F2001/136295 , H01L27/1225 , H01L27/124 , H01L29/45 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A novel interconnection structure which is excellent in adhesion and is capable of realizing low resistance and low contact resistance is provided. An interconnection structure including an interconnection film and a semiconductor layer of a thin film transistor above a substrate in this order from the side of a substrate, wherein the semiconductor layer is composed of an oxide semiconductor, is provided.
摘要翻译：提供了具有优异的粘附性并且能够实现低电阻和低接触电阻的新型互连结构。提供一种互连结构，其包括互连膜和衬底上方的薄膜晶体管的半导体层，从衬底的侧面开始，其中半导体层由氧化物半导体构成。

7. 发明申请

US20110256795A1 TOY TOP 审中-公开
标题翻译：玩具顶
公开(公告)号：US20110256795A1
公开(公告)日：2011-10-20
申请号：US12895196
申请日：2010-09-30
申请人： Haruhisa UJITA , Takeaki Maeda
发明人： Haruhisa UJITA , Takeaki Maeda
IPC分类号： A63H1/00
CPC分类号： A63H1/00
摘要： A toy top capable of continuing to spin without its spinning being abruptly stopped by contacting a playing surface when the toy top wobbles with a reduction in rotational speed so as to spin longer than an opponent toy top. A toy top includes a shaft portion having a circular shape in cross-section and adapted to come into contact with a playing surface of the playing board for serving as a center of rotation when the toy top spins; a rotating plate having an insertion hole of an inner diameter greater than an outer diameter of the shaft portion, the rotating plate being attached to the shaft portion so as to freely rotate around the shaft portion while the shaft portion is inserted through the insertion hole; and an engagement for permitting the rotating plate to freely rotate and preventing the rotating plate from detaching from the shaft portion when the rotating plate is attached to the shaft portion.
摘要翻译：当玩具顶部摆动转动速度降低以便比对手玩具顶部旋转更长时，能够通过接触游戏表面而突然停止旋转的玩具顶部，而不会旋转。玩具顶部包括具有圆形形状的轴部分，并且适于在玩具板旋转时作为旋转中心与玩板的游戏面接触; 旋转板，具有内径大于所述轴部的外径的插入孔，所述旋转板安装在所述轴部，以在所述轴部插入穿过所述插入孔的状态下绕所述轴部自由旋转; 以及用于允许旋转板自由旋转并且当旋转板附接到轴部分时防止旋转板从轴部分离的接合。

8. 发明申请

US20110064889A1 METHOD FOR PRODUCTION OF ELECTROLESS PLATING MATERIAL 有权
标题翻译：电解镀层材料的制造方法
公开(公告)号：US20110064889A1
公开(公告)日：2011-03-17
申请号：US12881524
申请日：2010-09-14
申请人： Manabu OSAMURA , Toshihisa Shimo , Kyoko Kumagai , Isami Kato , Takeshi Bessho , Takeaki Maeda
发明人： Manabu OSAMURA , Toshihisa Shimo , Kyoko Kumagai , Isami Kato , Takeshi Bessho , Takeaki Maeda
IPC分类号： B05D3/06 , B05D3/10
CPC分类号： C23C18/26 , C23C18/204 , C23C18/2086
摘要： A production method of an electroless plating material of the present invention is a method for the production of an electroless plating material that has a surface to be plated by electroless plating, and includes an ozone treatment step in which a material body that is made of a resin is brought into contact with a solution that contains ozone to form a modified layer in a surface of the material body, and a superficial layer removal step in which, after the ozone treatment step, the surface of the material body is irradiated with ultraviolet rays to remove a superficial layer of the modified layer.
摘要翻译：本发明的无电解电镀材料的制造方法是制造具有通过无电解电镀而被镀覆的表面的无电解电镀材料的方法，包括臭氧处理工序，其中，由使树脂与含有臭氧的溶液接触以在材料体的表面形成改性层，以及表面层去除步骤，其中在臭氧处理步骤之后，用紫外线照射材料体的表面以去除改性层的表层。

9. 发明申请

US20110006479A1 Jumping toy top 审中-公开
标题翻译：跳跃玩具顶
公开(公告)号：US20110006479A1
公开(公告)日：2011-01-13
申请号：US12659660
申请日：2010-03-16
申请人： Haruhisa Ujita , Takeaki Maeda
发明人： Haruhisa Ujita , Takeaki Maeda
IPC分类号： A63F3/00 , A63H1/06
CPC分类号： A63H1/16
摘要： A toy top that can repeatedly jump on a curved playing surface to attack an opponent toy top from above. The jumping toy top includes a toy main body, a spinning shaft body having a spinning shaft, and a shaft body supporting portion disposed on the toy main body to support the spinning shaft body. A distal end of the spinning shaft has one side projecting downward more than another diametrically opposite side to configure a portion to contact a playing surface of a playing board. When the jumping toy top spins on a central axis of the toy main body, the contact portion revolves around the central axis of the toy main body in a circular orbit.
摘要翻译：玩具顶部可以反复跳上弯曲的表面，从上方攻击对手玩具顶。跳跃玩具顶部包括玩具主体，具有旋转轴的旋转轴体和设置在玩具主体上以支撑旋转轴体的轴体支撑部。旋转轴的远端具有一个比另一直径相对侧向下突出的一侧，以构成与玩板的游戏面接触的部分。当跳跃玩具顶部在玩具主体的中心轴线上旋转时，接触部分围绕玩具主体的中心轴线以圆形轨道旋转。

10. 发明授权

US09093542B2 Thin-film transistor structure, as well as thin-film transistor and display device each having said structure 有权
标题翻译：薄膜晶体管结构，以及各自具有所述结构的薄膜晶体管和显示装置
公开(公告)号：US09093542B2
公开(公告)日：2015-07-28
申请号：US14113322
申请日：2012-04-19
申请人： Takeaki Maeda , Toshihiro Kugimiya , Jun Ho Song , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
发明人： Takeaki Maeda , Toshihiro Kugimiya , Jun Ho Song , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
IPC分类号： H01L29/10 , H01L29/786 , G02F1/1368 , H01L27/12
CPC分类号： H01L29/7869 , G02F1/1368 , H01L27/1222 , H01L29/78693
摘要： There is provided an oxide semiconductor layer capable of making stable the electric characteristics of a thin-film transistor without requiring an oxidatively-treated layer when depositing a passivation layer or the like in display devices such as organic EL displays and liquid crystal displays. The thin-film transistor structure of the present invention at least having, on a substrate, an oxide semiconductor layer, a source-drain electrode, and a passivation layer in order from the substrate side, wherein the oxide semiconductor layer is a stacked product of a first oxide semiconductor layer and a second oxide semiconductor layer; the first oxide semiconductor layer has a Zn content of 50 atomic % or more as a percentage of all metal elements contained therein, and the first oxide semiconductor layer is formed on the source-drain electrode and passivation layer side; the second oxide semiconductor layer contains Sn and at least one element selected from the group consisting of In, Ga, and Zn, and the second oxide semiconductor layer is formed on the substrate side; and the first oxide semiconductor layer is in direct contact both with the source-drain electrode and with the passivation layer.
摘要翻译：提供了一种氧化物半导体层，当在有机EL显示器和液晶显示器等显示装置中沉积钝化层等时，能够使薄膜晶体管的电特性稳定，而不需要氧化处理层。本发明的薄膜晶体管结构至少在衬底上具有氧化物半导体层，源 - 漏电极和钝化层，从衬底侧开始，其中氧化物半导体层是第一氧化物半导体层和第二氧化物半导体层; 第一氧化物半导体层的Zn含量占所有金属元素的百分比为50原子％以上，第一氧化物半导体层形成在源 - 漏电极和钝化层侧; 所述第二氧化物半导体层含有Sn和选自In，Ga和Zn中的至少一种元素，并且所述第二氧化物半导体层形成在所述基板侧; 并且第一氧化物半导体层与源 - 漏电极和钝化层直接接触。

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