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1. 外观设计

USD394450S Developing unit for printer and facsimile 失效
公开(公告)号：USD394450S
公开(公告)日：1998-05-19
申请号：US43835
申请日：1995-08-15
申请人： Keiji Katoh , Hiroshige Araki , Yasuo Imai
设计人： Keiji Katoh , Hiroshige Araki , Yasuo Imai

2. 发明授权

US5640651A Developing device 失效
标题翻译：开发设备
公开(公告)号：US5640651A
公开(公告)日：1997-06-17
申请号：US564516
申请日：1995-11-29
申请人： Keiji Katoh , Hiroshige Araki , Yasuo Imai , Shigeyuki Wakada , Eiichi Kido , Toshihiro Ota , Yuhi Yui
发明人： Keiji Katoh , Hiroshige Araki , Yasuo Imai , Shigeyuki Wakada , Eiichi Kido , Toshihiro Ota , Yuhi Yui
IPC分类号： G03G15/08 , G03G15/04
CPC分类号： G03G15/0896 , G03G15/0812 , G03G15/0822 , G03G15/0877 , G03G15/0891
摘要： A developer cartridge for image forming apparatuses which performs development to form images with non-magnetic, one-component type developer. The cartridge includes a developing roller for supplying developer to a photoconductor drum, a developer feed roller in non-contact with the developing roller for supply developer to the developing roller, and a developer-layer thickness control member for controlling the thickness of the developer layer on the developing roller. The developer feed roller is shaped as a regular polygonal prism. Since no recesses are formed in the surface of the regular polygonal prism, driving torque does not increase when developer is scrubbed from the prism, thus ensuring consistent operation and improved image quality. Non-magnetic, one-component type developer is compressed onto the developing roller by supplying the developer via the developer feed roller into a bottleneck between the developing roller and a developer applying member. The amount of developer which passes through the bottleneck onto the developing roller is controlled by a temporary reservoir, the pressurization thereof ensuring application of the developer to the developing roller. A control roller may be used against the developing roller to lower friction of developer, thereby preventing deposition of developer on the control roller while establishing a consistent amount of developer on the developing roller.
摘要翻译：用于图像形成装置的显影剂盒，其用非磁性单组分型显影剂进行显影以形成图像。盒包括用于将显影剂供应到感光鼓的显影辊，与用于向显影辊供应显影剂的显影辊非接触的显影剂供给辊以及用于控制显影剂层厚度的显影剂层厚度控制部件在显影辊上。显影剂供给辊的形状为正多边形棱镜。由于在正多边形棱镜的表面没有形成凹部，所以当从棱镜上洗涤显影剂时，驱动扭矩不会增加，从而确保一致的操作和改进的图像质量。通过将显影剂通过显影剂供给辊供给到显影辊和显影剂施加构件之间的瓶颈中，非磁性的单组分型显影剂被压缩到显影辊上。通过瓶颈到显影辊上的显影剂的量由临时储存器控制，其加压确保将显影剂施加到显影辊上。可以使用控制辊抵靠显影辊以降低显影剂的摩擦，从而防止显影剂在控制辊上沉积，同时在显影辊上建立一致量的显影剂。

3. 发明授权

US6094550A Developing apparatus 失效
标题翻译：开发设备
公开(公告)号：US6094550A
公开(公告)日：2000-07-25
申请号：US84414
申请日：1998-05-27
申请人： Eiichi Kido , Shigeyuki Wakada , Toshihide Ohgoshi , Yoshinori Ohtsuka , Hiroshige Araki , Yasuo Imai , Hiroshi Ishii , Yuhi Yui
发明人： Eiichi Kido , Shigeyuki Wakada , Toshihide Ohgoshi , Yoshinori Ohtsuka , Hiroshige Araki , Yasuo Imai , Hiroshi Ishii , Yuhi Yui
IPC分类号： G03G15/08
CPC分类号： G03G15/0817 , G03G15/0898
摘要： An electrophotography developing apparatus has been developed which can protect a developer holder and a layer thickness control member from damage. The device also prevents internal scattering of the developer while preventing a surplus supply of the developer to both ends on the peripheral surface of the developer holder. The unique advantages of the invention are derived through the utilization of sealing members having different elastic properties, which assume both bulk removal of excess developer while providing the needed uniform developer thickness. Another embodiment of the invention has the width of the layer thickness control member in a longitudinal direction set wider than the width of the developer holder in a longitudinal direction, and both side edges of the layer thickness control member are positioned outside both side edges of the developer holder. Proper sealing is assured by having the inner side edges of the sealing member positioned inside the side edges of the developer holder and outside the side edges of the image area of the image holder.
摘要翻译：已经开发了可以保护显影剂保持器和层厚控制构件免于损坏的电子照相显影装置。该装置还防止显影剂的内部散射，同时防止显影剂在显影剂载体的外周表面上的两端的多余的供应。本发明的独特优点是通过利用具有不同弹性性质的密封构件来实现，其同时提供了大量除去过量显影剂同时提供所需均匀的显影剂厚度。本发明的另一实施例具有纵向方向上的层厚度控制构件的宽度，其宽度大于显影剂保持器在纵向上的宽度，并且层厚度控制构件的两个侧边缘位于开发商持有人通过使密封构件的内侧边缘位于显影剂保持器的侧边缘的内侧并且位于图像保持器的图像区域的侧边缘的外侧来确保适当的密封。

4. 发明申请

US20080249036A1 Antagonist Against Tolerance to Anticancer Drugs 审中-公开
标题翻译：反对抗癌药物的抗药性
公开(公告)号：US20080249036A1
公开(公告)日：2008-10-09
申请号：US11661353
申请日：2005-08-31
申请人： Yoshikazu Sugimoto , Satomi Tsukahara , Yasuo Imai
发明人： Yoshikazu Sugimoto , Satomi Tsukahara , Yasuo Imai
IPC分类号： A61K31/704 , C07J1/00 , C12N5/00 , A61P35/00 , C12Q1/02 , A61K31/56
CPC分类号： A61K31/136 , A61K31/00 , A61K31/05 , A61K31/337 , A61K31/352 , A61K31/353 , A61K31/4745 , A61K31/475 , A61K31/553 , A61K31/56 , A61K31/565 , A61K31/566 , A61K31/57 , A61K45/06 , G01N33/57415 , G01N2333/4704 , G01N2500/10 , A61K2300/00
摘要： An ABC transporter protein expression inhibitor comprising, as the active ingredient(s), 0.001 to 100 nM of one or more members selected from among steroid hormones, compounds having a female hormone function, analogous compounds thereof and antagonistic inhibitors therefor; an anticancer composition containing this ABC transporter protein expression inhibitor and an anticancer drug; and cells useful in the development of an anticancer drug. The present invention provides a drug which inhibits the expression of an ABC transporter to thereby overcome resistance to anticancer drugs; cancer cells useful in screening such drugs; and an anticancer drug efficacious even against such a cancer as having acquired resistance to anticancer drugs.
摘要翻译：一种ABC转运蛋白表达抑制剂，其包含作为活性成分的0.001至100nM的一种或多种选自类固醇激素，具有雌激素功能的化合物，其类似物及其拮抗性抑制剂; 含有该ABC转运蛋白表达抑制剂和抗癌药物的抗癌组合物; 和可用于开发抗癌药物的细胞。本发明提供抑制ABC转运蛋白表达从而克服对抗癌药物的抗性的药物; 可用于筛选此类药物的癌细胞; 和抗癌药物即使对抗抗癌药物也具有抗药性。

5. 发明申请

US20070278567A1 Method of fabricating semiconductor device 审中-公开
公开(公告)号：US20070278567A1
公开(公告)日：2007-12-06
申请号：US11882626
申请日：2007-08-03
申请人： Sumito Numazawa , Yoshito Nakazawa , Masayoshi Kobayashi , Satoshi Kudo , Yasuo Imai , Sakae Kubo , Takashi Shigematsu , Akihiro Ohnishi , Kozo Uesawa , Kentaro Oishi
发明人： Sumito Numazawa , Yoshito Nakazawa , Masayoshi Kobayashi , Satoshi Kudo , Yasuo Imai , Sakae Kubo , Takashi Shigematsu , Akihiro Ohnishi , Kozo Uesawa , Kentaro Oishi
IPC分类号： H01L29/78
CPC分类号： H01L21/28114 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/0696 , H01L29/0869 , H01L29/4236 , H01L29/42376 , H01L29/4238 , H01L29/511 , H01L29/513 , H01L29/518 , H01L29/66666 , H01L29/66734 , H01L29/7813 , H01L29/7827
摘要： In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

6. 发明申请

US20120087755A1 HOLE CUTTER 有权
标题翻译：孔切刀
公开(公告)号：US20120087755A1
公开(公告)日：2012-04-12
申请号：US12948335
申请日：2010-11-17
申请人： Shohei Omi , Yasuo Imai
发明人： Shohei Omi , Yasuo Imai
IPC分类号： B23B51/04
CPC分类号： B23B51/0406 , B23B2251/285 , B23B2251/287
摘要： A plurality of blade tips 4, 5 are provided at the distal end of a blade cylinder having a rotation axis. The blade tips 4, 5 are arranged along a rotation direction at intervals. Each of the blade tips 4, 5 has an outside blade 6 at a farther position from the rotation axis and an inside blade 7 at a closer position to the rotation axis. Each outside blade 6 and the corresponding inside blade 7 are arranged next to each other while being displaced in the rotation direction with the stepped cutting edge 8 in between. In the blade tip 4, which is one of the blade tips 4, 5 adjacent to each other in the rotation direction, the sum of the number of the cutting edge 9 in the outside blade 6 and the number of the cutting edges 11, 12 in the inside blade 7 is three. In the other blade tip 5, the sum of the number of the cutting edge 9 in the outside blade 6 and the number of the cutting edge 10 in the inside blade 7 is two.
摘要翻译：多个叶片尖端4,5设置在具有旋转轴线的叶片滚筒的远端。叶片尖端4,5间隔地沿旋转方向排列。每个叶片尖端4,5具有位于距离旋转轴线更远的位置的外侧叶片6和与旋转轴线更靠近的内侧叶片7。每个外刀片6和相应的内刀片7彼此相邻布置，同时沿着旋转方向位移，台阶式切割刃8在其间。在作为旋转方向上彼此相邻的叶片尖端4,5之一的叶片尖端4中，外侧叶片6中的切削刃9的数量与切削刃11,12的数量之和在内刀片7中是三个。在另一个叶片尖端5中，外侧叶片6中的切削刃9的数量与内部刀片7中的切削刃10的数量之和为2。

7. 发明申请

US20120052675A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120052675A1
公开(公告)日：2012-03-01
申请号：US13291999
申请日：2011-11-08
申请人： Sumito Numazawa , Yoshito Nakazawa , Masayoshi Kobayashi , Satoshi Kudo , Yasuo Imai , Sakae Kubo , Takashi Shigematsu , Akihiro Ohnishi , Kozo Uesawa , Kentaro Oishi
发明人： Sumito Numazawa , Yoshito Nakazawa , Masayoshi Kobayashi , Satoshi Kudo , Yasuo Imai , Sakae Kubo , Takashi Shigematsu , Akihiro Ohnishi , Kozo Uesawa , Kentaro Oishi
IPC分类号： H01L21/28
CPC分类号： H01L21/28114 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/0696 , H01L29/0869 , H01L29/4236 , H01L29/42376 , H01L29/4238 , H01L29/511 , H01L29/513 , H01L29/518 , H01L29/66666 , H01L29/66734 , H01L29/7813 , H01L29/7827
摘要： In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.
摘要翻译：在制造具有沟槽栅极结构的MISFET的半导体器件的方法中，从半导体层的方向的深度方向上的第一导电类型的半导体层的主表面形成沟槽，在沟槽的内表面上形成包括热氧化膜和沉积膜的栅极绝缘膜，并且在沟槽中形成栅电极之后，将杂质引入到第一导电类型的半导体衬底中以形成用作沟道形成区域的第二导电类型的半导体区域，并且将杂质引入到第二导电类型的半导体区域中，以形成用作源极区域的第一导电类型的半导体区域。

8. 发明申请

US20110215398A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20110215398A1
公开(公告)日：2011-09-08
申请号：US13107542
申请日：2011-05-13
申请人： Sumito Numazawa , Yoshito Nakazawa , Masayoshi Kobayashi , Satoshi Kudo , Yasuo Imai , Sakae Kubo , Takashi Shigematsu , Akihiro Ohnishi , Kozo Uesawa , Kentaro Oishi
发明人： Sumito Numazawa , Yoshito Nakazawa , Masayoshi Kobayashi , Satoshi Kudo , Yasuo Imai , Sakae Kubo , Takashi Shigematsu , Akihiro Ohnishi , Kozo Uesawa , Kentaro Oishi
IPC分类号： H01L29/78
CPC分类号： H01L21/28114 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/0696 , H01L29/0869 , H01L29/4236 , H01L29/42376 , H01L29/4238 , H01L29/511 , H01L29/513 , H01L29/518 , H01L29/66666 , H01L29/66734 , H01L29/7813 , H01L29/7827
摘要： In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.
摘要翻译：在制造具有沟槽栅极结构的MISFET的半导体器件的方法中，从半导体层的深度方向上作为漏极区域的第一导电型半导体层的主表面形成沟槽，形成栅极在沟槽的内表面上形成包括热氧化膜和沉积膜的绝缘膜，并且在沟槽中形成栅电极之后，将杂质引入到第一导电类型的半导体衬底中以形成半导体区域用作沟道形成区域的第二导电类型，并且将杂质引入到第二导电类型的半导体区域中，以形成用作源极区域的第一导电类型的半导体区域。

9. 发明申请

US20100291242A1 ANTAGONIST AGAINST TOLERANCE TO ANTICANCER DRUGS 审中-公开
标题翻译：拮抗药物对抗药物的耐受性
公开(公告)号：US20100291242A1
公开(公告)日：2010-11-18
申请号：US12647590
申请日：2009-12-28
申请人： Yoshikazu SUGIMOTO , Satomi Tsukahara , Yasuo Imai
发明人： Yoshikazu SUGIMOTO , Satomi Tsukahara , Yasuo Imai
IPC分类号： A61K36/24 , A61K31/56 , A61K31/704 , A61P35/00
CPC分类号： A61K31/136 , A61K31/00 , A61K31/05 , A61K31/337 , A61K31/352 , A61K31/353 , A61K31/4745 , A61K31/475 , A61K31/553 , A61K31/56 , A61K31/565 , A61K31/566 , A61K31/57 , A61K45/06 , G01N33/57415 , G01N2333/4704 , G01N2500/10 , A61K2300/00
摘要： An ABC transporter protein expression inhibitor comprising, as the active ingredient(s), 0.001 to 100 nM of one or more members selected from among steroid hormones, compounds having a female hormone function, analogous compounds thereof and antagonistic inhibitors therefor; an anticancer composition containing this ABC transporter protein expression inhibitor and an anticancer drug; and cells useful in the development of an anticancer drug. The present invention provides a drug which inhibits the expression of an ABC transporter to thereby overcome resistance to anticancer drugs; cancer cells useful in screening such drugs; and an anticancer drug efficacious even against such a cancer as having acquired resistance to anticancer drugs.
摘要翻译：一种ABC转运蛋白表达抑制剂，其包含作为活性成分的0.001至100nM的一种或多种选自类固醇激素，具有雌激素功能的化合物，其类似物及其拮抗性抑制剂; 含有该ABC转运蛋白表达抑制剂和抗癌药物的抗癌组合物; 和可用于开发抗癌药物的细胞。本发明提供抑制ABC转运蛋白表达从而克服对抗癌药物的抗性的药物; 可用于筛选此类药物的癌细胞; 和抗癌药物即使对抗抗癌药物也具有抗药性。

10. 发明授权

US06168996A Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06168996A
公开(公告)日：2001-01-02
申请号：US09137508
申请日：1998-08-20
申请人： Sumito Numazawa , Yoshito Nakazawa , Masayoshi Kobayashi , Satoshi Kudo , Yasuo Imai , Sakae Kubo , Takashi Shigematsu , Akihiro Ohnishi , Kozo Uesawa , Kentaro Oishi
发明人： Sumito Numazawa , Yoshito Nakazawa , Masayoshi Kobayashi , Satoshi Kudo , Yasuo Imai , Sakae Kubo , Takashi Shigematsu , Akihiro Ohnishi , Kozo Uesawa , Kentaro Oishi
IPC分类号： H01L21336
CPC分类号： H01L21/28114 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/0696 , H01L29/0869 , H01L29/4236 , H01L29/42376 , H01L29/4238 , H01L29/511 , H01L29/513 , H01L29/518 , H01L29/66666 , H01L29/66734 , H01L29/7813 , H01L29/7827
摘要： In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.
摘要翻译：在制造具有沟槽栅极结构的MISFET的半导体器件的方法中，从半导体层的深度方向上作为漏极区域的第一导电型半导体层的主表面形成沟槽，形成栅极在沟槽的内表面上形成包括热氧化膜和沉积膜的绝缘膜，并且在沟槽中形成栅电极之后，将杂质引入到第一导电类型的半导体衬底中以形成半导体区域用作沟道形成区域的第二导电类型，并且将杂质引入到第二导电类型的半导体区域中，以形成用作源极区域的第一导电类型的半导体区域。

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