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    • 3. 发明授权
    • Process for producing a multilayered thin ferroelectric film
    • 多层薄铁电体薄膜的制造方法
    • US5645885A
    • 1997-07-08
    • US596576
    • 1996-02-05
    • Keiichi Nishimoto
    • Keiichi Nishimoto
    • C23C16/40C03C17/34C04B41/52C04B41/89C23C18/12G02F1/00G02F1/055G11C13/04H01B3/00H01L41/22B05D5/12
    • C04B41/89C03C17/3417C04B41/526C23C18/1216C23C18/1225C23C18/1283G02F1/0553G11C13/04H01L41/318G02F1/0027H01L41/1876Y10S428/90
    • The improved multilayered thin ferroelectric film includes a substrate, a first polycrystalline ferroelectric layer that is formed on the substrate, that has high density and a refractive index of the single-crystal grade but whose surface is not optically smooth, and a second polycrystalline ferroelectric layer that is formed on the first polycrystalline ferroelectric layer, that has a comparatively low density, that has a lower refractive index than the single crystal but which has an optically smooth surface. This multilayered thin ferroelectric film is produced by a process that comprises applying more than one coat of a solution of an organometallic compound to the substrate and performing more than one cycle of heat treatments, provided that firing for the formation of the first polycrystalline ferroelectric layer is conducted in a temperature range of 400.degree. to 1,000.degree. C. whereas firing for the formation of the second polycrystalline ferroelectric layer is conducted at a temperature in the range from 200.degree. to 600.degree. C. that is lower than the firing temperature used to form the first layer.
    • 改进的多层薄铁电体膜包括基板,形成在基板上的第一多晶铁电层,其具有高密度和单晶等级但其表面不光滑的折射率,以及第二多晶铁电层 形成在第一多晶铁电层上,具有比单晶低的折射率但具有光学平滑表面的比较低的密度。 这种多层薄铁电薄膜是通过一种方法生产的,只要将用于形成第一多晶铁电体层的焙烧为多于一个的方法,其中包括将多于一层的有机金属化合物溶液涂覆到基底上,并执行一个以上的热处理循环 在400℃至1000℃的温度范围内进行,而用于形成第二多晶铁电层的烧成温度在200℃至600℃的温度下进行,该温度低于用于形成的烧成温度 第一层。