专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5220482A Thin film capacitor 失效
标题翻译：薄膜电容器
公开(公告)号：US5220482A
公开(公告)日：1993-06-15
申请号：US826468
申请日：1992-01-27
申请人： Kazuo Takemura , Harunobu Yoshida , Hideo Kawahara , Eiji Mizushima , Masanaga Kikuzawa
发明人： Kazuo Takemura , Harunobu Yoshida , Hideo Kawahara , Eiji Mizushima , Masanaga Kikuzawa
IPC分类号： H01L21/316 , H01L21/02 , H01L21/822 , H01L27/04 , H01L29/94
CPC分类号： H01L28/40 , H01L29/94
摘要： A thin film capacitor having high performances, e.g. high frequency characteristics, heat resistance and dielectric strength, and capable of meeting demands for high integration and miniaturization of electronic devices, which comprises an electrically conductive substrate, a silica thin film formed on the substrate by bringing the substrate into contact with an aqueous solution of hydrosilicofluoric acid supersaturated with silica, and an electrically conductive film formed as an electrode on the silica thin film.

2. 发明授权

US5679976A Molded electric parts and method of manufacturing the same 失效
标题翻译：成型电气部件及其制造方法
公开(公告)号：US5679976A
公开(公告)日：1997-10-21
申请号：US367191
申请日：1995-01-13
申请人： Yoshiaki Nishikawa , Yasuyuki Takeda , Masanaga Kikuzawa
发明人： Yoshiaki Nishikawa , Yasuyuki Takeda , Masanaga Kikuzawa
IPC分类号： B29C45/26 , B29C45/14 , B29K105/20 , B29L31/34 , H01G2/06 , H01G4/224 , H01G13/00 , H01L23/28 , H05K1/00 , H05K1/14 , H05K1/18 , H05K3/30 , H05K3/34 , H05K3/36 , H01L23/48 , H01L23/34
CPC分类号： H01G4/224 , H01G2/065 , H05K1/141 , H05K3/301 , H01L2224/48091 , H01L2224/48247 , H01L2224/4918 , H01L2924/13033 , H01L2924/30107 , H05K1/0284 , H05K1/182 , H05K1/183 , H05K2201/049 , H05K2201/10022 , H05K2201/10166 , H05K2201/10583 , H05K2201/10636 , H05K3/3442 , H05K3/368 , Y02P70/611
摘要： The present invention provides a molded electric part which does not include any lead wires and is preferably compact in size and light in weight. The molded electric part of the invention can effectively prevent deterioration of an electric element by molding the element with a resin. The invention is also directed to a method of simultaneously manufacturing a number of products having fixed dimensions and excellent electrical properties through injection molding with a multi-forming mold complex. A molded film capacitor (1) of the invention includes a film capacitor element (2) and an element-receiving body (3) mainly composed of a synthetic resin with high dielectric ability. The film capacitor element (2) is accommodated in an element-receiving recess (7) formed in a substantial center of the element-receiving body (3). A couple of electrodes (2a,2a) formed on both side faces of the film capacitor element (2) are electrically connected with solder (5,5) to a film conductive pattern (4) formed by metal-plating a surface of the element-receiving body (3). Part of the conductive pattern (4) arranged on a bottom face of the element-receiving body (3) forms an outside connection terminal film (8). The film capacitor element (2) is further molded with a sealing resin (6) in an airtight manner for protecting the element-receiving recess (7) from outside humidity.
摘要翻译： PCT No.PCT / JP94 / 00960 Sec。 371日期1995年1月13日 102（e）日期1995年1月13日PCT提交1994年6月14日PCT公布。第WO94 / 29887号公报日期1994年12月22日本发明提供一种不包含任何引线的成型电气部件，其重量轻，重量轻。本发明的模制电气部件可以通过用树脂模制元件来有效地防止电气元件的劣化。本发明还涉及通过具有多成形模具复合体的注射成型同时制造具有固定尺寸和优异电性能的多种产品的方法。本发明的成型薄膜电容器（1）包括膜电容器元件（2）和主要由具有高介电能力的合成树脂构成的元件容纳体（3）。薄膜电容器元件（2）容纳在形成在元件容纳体（3）的大致中心的元件容纳凹部（7）中。形成在薄膜电容器元件（2）的两个侧面上的几个电极（2a，2a）与焊料（5,5）电连接到薄膜导电图案（4），该导电图案通过金属镀覆元件的表面而形成接收体（3）。布置在元件接收体（3）的底面上的导电图案（4）的一部分形成外部连接端子膜（8）。薄膜电容器元件（2）进一步用密封树脂（6）以气密的方式模制，以保护元件容纳凹部（7）不受外部湿度的影响。

3. 发明授权

US5214738A Positive coefficient thin-film thermistor 失效
标题翻译：积极的系列薄膜热敏电阻
公开(公告)号：US5214738A
公开(公告)日：1993-05-25
申请号：US667382
申请日：1991-03-22
申请人： Shigeaki Nakajima , Hiroshi Waki , Nobuhiro Fukuda , Hiroyuki Hyakutake , Masanaga Kikuzawa
发明人： Shigeaki Nakajima , Hiroshi Waki , Nobuhiro Fukuda , Hiroyuki Hyakutake , Masanaga Kikuzawa
IPC分类号： H01C7/02
CPC分类号： H01C7/025 , H01C7/021
摘要： A positive coefficient thin-film thermistor which is a thin film exhibiting a positive temperature coefficient (PTC) characteristic and having a thickness of 0.005 to 5 .mu.m and electrodes as constituting elements, and wherein the thin film is compound of a barium titanate based composition and the PTC characteristic is represented by a resistance variation in the transition of region of 1-10 orders of magnitude and a maximum resistance temperature variation rate of 1-20 orders/.degree.C.
摘要翻译： PCT No.PCT / JP90 / 00593 Sec。 371日期1991年3月22日 102（e）1991年3月22日PCT提交1990年5月10日PCT公布。 WO91 / 02365 PCT出版物日期：1991年2月21日。一种正系数薄膜热敏电阻，其为呈现正温度系数（PTC）特性且厚度为0.005〜5μm的薄膜，电极为构成元素，其中，薄膜为基于钛酸钡的组合物和PTC特性的化合物由1-10个数量级的区域的转变中的电阻变化和最大电阻温度变化率为1-20个/℃表示。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式