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    • 2. 发明授权
    • Highly pure sintered carbide with high electric conductivity and process
of producing the same
    • 具有高导电性的高纯度烧结碳化物及其制造方法
    • US5093039A
    • 1992-03-03
    • US432389
    • 1989-11-06
    • Kazunori KijimaEiki AraiYouichi MiyazawaMikio KonishiKen Kato
    • Kazunori KijimaEiki AraiYouichi MiyazawaMikio KonishiKen Kato
    • C04B35/575H01B1/04
    • C04B35/575H01B1/04
    • Disclosed is an electrically conductive sintered silicon carbide body having an electric resistivity of not higher than 1 .OMEGA..multidot.cm, which is produced by(a) mixing(1) a first silicon carbide powder having a mean grain size of from 0.1 to 10 .mu.m with(2) a second silicon carbide powder having a mean grain size of not greater than 0.1 .mu.m prepared by(2-1) introducing a starting gas composed of a silane compound of silicon halide and a hydrocarbon into a plasma of a non-oxidative atmosphere, and(2-2) conducting gas phase reaction between the silane compound or silicon halide and the hydrocarbon while controlling the pressure of the reaction system within the range of from less than 1 atom to 0.1 torr, and(3) optionally, a carbon powder which is required for reducing oxides contained in both the first and second silicon carbide powders,(b) optionally reducing the oxides with the carbon, and(c) heating the resulting mixture for sintering. Also, processes of producing the same are disclosed.
    • 公开了一种导电烧结碳化硅体,其电阻率不高于1欧米亚×厘米,其通过以下步骤制备:(a)将平均粒度为0.1至10微米的第一碳化硅粉末与 (2)通过(2-1)将由硅卤化物和烃的硅烷化合物构成的起始气体引入非氧化性的等离子体中制备平均粒径不大于0.1μm的第二碳化硅粉末 (2-2)在硅烷化合物或卤化硅与烃之间进行气相反应,同时将反应体系的压力控制在小于1原子至0.1托的范围内,和(3)任选地, 为了减少第一和第二碳化硅粉末中所含的氧化物所需的碳粉,(b)任选地用碳还原氧化物,和(c)加热所得混合物进行烧结。 另外,公开了制造方法。
    • 6. 发明申请
    • LIGHT EMITTING MODULE
    • 发光模块
    • US20120092853A1
    • 2012-04-19
    • US13380390
    • 2010-05-24
    • Hisayoshi DaichoTatsuya MatsuuraKen KatoYasutaka Sasaki
    • Hisayoshi DaichoTatsuya MatsuuraKen KatoYasutaka Sasaki
    • F21V9/16
    • H01L33/504C09K11/7731C09K11/7734H01L25/0753H01L2924/0002Y02B20/181H01L2924/00
    • In a light emitting module, a semiconductor light emitting element emits short-wavelength visible light. A plurality of the semiconductor light emitting elements are provided side by side on the same flat surface. The light wavelength conversion member contains a first phosphor and a second phosphor, the wavelength of the light emitted after the wavelength thereof has been converted by either of the two being different from the excitation wavelength for the other. The first phosphor emits yellow light by exciting the short-wavelength visible light. The second phosphor emits blue light by exciting the short-wavelength visible light. The first phosphor does not include the wavelength range of the blue light in the excitation wavelength range thereof. The light wavelength conversion member is cured after being potted so as to integrally cover the plurality of the semiconductor light emitting elements.
    • 在发光模块中,半导体发光元件发射短波长的可见光。 多个半导体发光元件并排设置在同一平面上。 光波长转换构件包含第一荧光体和第二荧光体,其波长之后发射的光的波长已经被两个中的任一个转换为与另一个的激发波长不同。 第一个荧光体通过激发短波长可见光发射黄光。 第二荧光体通过激发短波长可见光而发出蓝光。 第一荧光体不包括其激发波长范围内的蓝色光的波长范围。 光波长转换构件在被封装之后被固化以一体地覆盖多个半导体发光元件。
    • 7. 发明授权
    • Cleaning blade and image forming apparatus
    • 清洁刀片和成像设备
    • US08086162B2
    • 2011-12-27
    • US12654558
    • 2009-12-23
    • Ken Kato
    • Ken Kato
    • G03G21/00
    • G03G21/0017
    • A cleaning blade is disposed in an abutting relation with an image bearing body and configured to remove residual developer material from the image bearing body. The cleaning blade has a tan δ peak temperature equal to or higher than 8.6° C. and lower than 45° C., and any one of a Young's modulus equal to or higher than 13 Mpa and lower than 140 Mpa, a tensile strength equal to or higher than 37.3 Mpa and lower than 76 Mpa, a hardness equal to or higher than 83° and lower than 97°, and a tearing strength equal to or higher than 59 kgf/cm and lower than 118 kgf/cm.
    • 清洁刮板与图像承载体邻接地设置并构造成从图像承载体移除残留的显影剂材料。 清洁刮板的tanδ峰值温度等于或高于8.6℃且低于45℃,杨氏模量等于或高于13Mpa且低于140Mpa,拉伸强度相等 高于37.3Mpa且低于76Mpa,硬度等于或高于83°且低于97°,撕裂强度等于或高于59kgf / cm且低于118kgf / cm。
    • 8. 发明申请
    • Fat Accumulation Inhibitor
    • 脂肪蓄积抑制剂
    • US20090253658A1
    • 2009-10-08
    • US12296222
    • 2007-04-06
    • Reo TanakaTomoyuki IsogaiYuko HarutaSusumu MiuraKen KatoToshimitsu YoshiokaHiroshi KawakamiSatoshi HigurashiHiroaki Matsuyama
    • Reo TanakaTomoyuki IsogaiYuko HarutaSusumu MiuraKen KatoToshimitsu YoshiokaHiroshi KawakamiSatoshi HigurashiHiroaki Matsuyama
    • A61K31/66C07F9/06
    • A61K35/20A23L2/52A23L33/19A23V2002/00A61K31/661A23V2200/332A23V2250/1844
    • To provide a fat accumulation inhibitor and a food or drink for inhibiting fat accumulation, a visceral fat accumulation inhibitor and a food or drink for inhibiting visceral fat accumulation, or an agent for accelerating increase and/or inhibiting decrease of an adiponectin concentration in blood and a food or drink for accelerating increase and/or inhibiting decrease of an adiponectin concentration in blood.A fat accumulation inhibitor for a fat cell, which comprises a milk-derived phospholipid as an active ingredient, and a food or drink for inhibiting fat accumulation in a fat cell, which comprises a milk-derived phospholipid. A visceral fat accumulation inhibitor comprising a sphingosine-containing phospholipid or a derivative thereof as an active ingredient, and a food or drink for inhibiting visceral fat accumulation. An agent for accelerating increase and/or inhibiting decrease of an adiponectin concentration in blood, which comprises a sphingosine-containing phospholipid or a derivative thereof as an active ingredient, and a food or drink for accelerating increase and/or inhibiting decrease of an adiponectin concentration in blood.
    • 提供一种脂肪蓄积抑制剂和用于抑制脂肪蓄积的食物或饮料,内脏脂肪蓄积抑制剂和用于抑制内脏脂肪蓄积的食品或饮料,或用于加速和/或抑制血液中脂联素浓度降低的试剂,以及 用于促进血液中脂联素浓度增加和/或抑制降低的食物或饮料。 一种脂肪蓄积抑制剂,其包含乳源性磷脂作为活性成分的脂肪蓄积抑制剂,以及包含乳源性磷脂的脂肪细胞中抑制脂肪蓄积的食品或饮料。 含有鞘氨醇的磷脂或其衍生物作为活性成分的内脏脂肪蓄积抑制剂和抑制内脏脂肪蓄积的食品或饮料。 用于促进增加和/或抑制血液中脂联素浓度降低的药物,其包含含鞘氨醇的磷脂或其衍生物作为活性成分,以及用于加速和/或抑制脂联素浓度降低的食品或饮料 在血中